CN1177326C - 磁随机存取存储器装置 - Google Patents
磁随机存取存储器装置Info
- Publication number
- CN1177326C CN1177326C CNB011407867A CN01140786A CN1177326C CN 1177326 C CN1177326 C CN 1177326C CN B011407867 A CNB011407867 A CN B011407867A CN 01140786 A CN01140786 A CN 01140786A CN 1177326 C CN1177326 C CN 1177326C
- Authority
- CN
- China
- Prior art keywords
- storage unit
- tmr
- memory cell
- random access
- switching transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 11
- 238000001465 metallisation Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000005641 tunneling Effects 0.000 abstract 1
- 238000003860 storage Methods 0.000 description 63
- 230000005415 magnetization Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005055 memory storage Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10041378A DE10041378C1 (de) | 2000-08-23 | 2000-08-23 | MRAM-Anordnung |
DE10041378.1 | 2000-08-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1347119A CN1347119A (zh) | 2002-05-01 |
CN1177326C true CN1177326C (zh) | 2004-11-24 |
Family
ID=7653512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011407867A Expired - Fee Related CN1177326C (zh) | 2000-08-23 | 2001-08-23 | 磁随机存取存储器装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6421271B1 (zh) |
EP (1) | EP1184871B1 (zh) |
JP (1) | JP2002157874A (zh) |
KR (1) | KR100443545B1 (zh) |
CN (1) | CN1177326C (zh) |
DE (2) | DE10041378C1 (zh) |
TW (1) | TW518597B (zh) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4149647B2 (ja) * | 2000-09-28 | 2008-09-10 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
DE10059181C2 (de) * | 2000-11-29 | 2002-10-24 | Infineon Technologies Ag | Integrierter magnetoresistiver Halbleiterspeicher und Herstellungsverfahren dafür |
JP2002298572A (ja) * | 2001-03-28 | 2002-10-11 | Toshiba Corp | 半導体記憶装置 |
US6919592B2 (en) * | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
US6835591B2 (en) | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6829158B2 (en) * | 2001-08-22 | 2004-12-07 | Motorola, Inc. | Magnetoresistive level generator and method |
US6869855B1 (en) | 2001-09-02 | 2005-03-22 | Borealis Technical Limited | Method for making electrode pairs |
JP4771631B2 (ja) * | 2001-09-21 | 2011-09-14 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
JP4084084B2 (ja) * | 2002-05-23 | 2008-04-30 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
TW578149B (en) * | 2002-09-09 | 2004-03-01 | Ind Tech Res Inst | High density magnetic random access memory |
JP3935049B2 (ja) * | 2002-11-05 | 2007-06-20 | 株式会社東芝 | 磁気記憶装置及びその製造方法 |
US7173846B2 (en) * | 2003-02-13 | 2007-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic RAM and array architecture using a two transistor, one MTJ cell |
US7233024B2 (en) | 2003-03-31 | 2007-06-19 | Sandisk 3D Llc | Three-dimensional memory device incorporating segmented bit line memory array |
TW589753B (en) * | 2003-06-03 | 2004-06-01 | Winbond Electronics Corp | Resistance random access memory and method for fabricating the same |
US20050027564A1 (en) * | 2003-06-18 | 2005-02-03 | Yantis David Brook | Term management system suitable for healthcare and other use |
US6956763B2 (en) * | 2003-06-27 | 2005-10-18 | Freescale Semiconductor, Inc. | MRAM element and methods for writing the MRAM element |
US6967366B2 (en) * | 2003-08-25 | 2005-11-22 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory with reduced switching field variation |
US6985383B2 (en) | 2003-10-20 | 2006-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reference generator for multilevel nonlinear resistivity memory storage elements |
US6947333B2 (en) * | 2003-10-30 | 2005-09-20 | Hewlett-Packard Development Company, L.P. | Memory device |
US7286378B2 (en) * | 2003-11-04 | 2007-10-23 | Micron Technology, Inc. | Serial transistor-cell array architecture |
US7064970B2 (en) * | 2003-11-04 | 2006-06-20 | Micron Technology, Inc. | Serial transistor-cell array architecture |
JP4747507B2 (ja) * | 2004-04-16 | 2011-08-17 | ソニー株式会社 | 磁気メモリ及びその記録方法 |
US7154798B2 (en) * | 2004-04-27 | 2006-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM arrays and methods for writing and reading magnetic memory devices |
US7129098B2 (en) * | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
JP2006156608A (ja) * | 2004-11-29 | 2006-06-15 | Hitachi Ltd | 磁気メモリおよびその製造方法 |
CN100476994C (zh) * | 2005-04-27 | 2009-04-08 | 台湾积体电路制造股份有限公司 | 磁性存储单元的阵列和辨别磁性存储单元逻辑状态的方法 |
US7411815B2 (en) * | 2005-11-14 | 2008-08-12 | Infineon Technologies Ag | Memory write circuit |
US7362644B2 (en) * | 2005-12-20 | 2008-04-22 | Magic Technologies, Inc. | Configurable MRAM and method of configuration |
WO2008061515A1 (de) * | 2006-11-20 | 2008-05-29 | Atlantic Zeiser Gmbh | Sicherheitsdokument/karte zur identifizierung und verfahren zur herstellung eines sicherheitsdokuments/einer karte |
TW200907963A (en) * | 2007-08-02 | 2009-02-16 | Ind Tech Res Inst | Magnetic random access memory and operation method |
US20120134200A1 (en) * | 2010-11-29 | 2012-05-31 | Seagate Technology Llc | Magnetic Memory Cell With Multi-Level Cell (MLC) Data Storage Capability |
KR102116792B1 (ko) | 2013-12-04 | 2020-05-29 | 삼성전자 주식회사 | 자기 메모리 장치, 이의 동작 방법 및 이를 포함하는 반도체 시스템 |
KR102116719B1 (ko) | 2013-12-24 | 2020-05-29 | 삼성전자 주식회사 | 자기 메모리 장치 |
US10937828B2 (en) | 2018-10-11 | 2021-03-02 | International Business Machines Corporation | Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profile |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5189594A (en) * | 1991-09-20 | 1993-02-23 | Rohm Co., Ltd. | Capacitor in a semiconductor integrated circuit and non-volatile memory using same |
US5734605A (en) * | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
US5699293A (en) * | 1996-10-09 | 1997-12-16 | Motorola | Method of operating a random access memory device having a plurality of pairs of memory cells as the memory device |
US6097625A (en) * | 1998-07-16 | 2000-08-01 | International Business Machines Corporation | Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes |
US5946227A (en) * | 1998-07-20 | 1999-08-31 | Motorola, Inc. | Magnetoresistive random access memory with shared word and digit lines |
KR100450466B1 (ko) * | 1999-01-13 | 2004-09-30 | 인피니언 테크놀로지스 아게 | Mram용 판독-/기록 아키텍처 |
-
2000
- 2000-08-23 DE DE10041378A patent/DE10041378C1/de not_active Expired - Fee Related
-
2001
- 2001-08-07 DE DE50112149T patent/DE50112149D1/de not_active Expired - Lifetime
- 2001-08-07 EP EP01119039A patent/EP1184871B1/de not_active Expired - Lifetime
- 2001-08-22 TW TW090120606A patent/TW518597B/zh not_active IP Right Cessation
- 2001-08-23 KR KR10-2001-0050919A patent/KR100443545B1/ko not_active IP Right Cessation
- 2001-08-23 JP JP2001253609A patent/JP2002157874A/ja active Pending
- 2001-08-23 CN CNB011407867A patent/CN1177326C/zh not_active Expired - Fee Related
- 2001-08-23 US US09/935,622 patent/US6421271B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TW518597B (en) | 2003-01-21 |
KR20020015971A (ko) | 2002-03-02 |
US6421271B1 (en) | 2002-07-16 |
CN1347119A (zh) | 2002-05-01 |
DE10041378C1 (de) | 2002-05-16 |
JP2002157874A (ja) | 2002-05-31 |
US20020039308A1 (en) | 2002-04-04 |
KR100443545B1 (ko) | 2004-08-09 |
EP1184871A1 (de) | 2002-03-06 |
EP1184871B1 (de) | 2007-03-07 |
DE50112149D1 (de) | 2007-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER NAME: INFENNIAN TECHNOLOGIES AG |
|
CP01 | Change in the name or title of a patent holder |
Address after: Munich, Germany Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: INFINEON TECHNOLOGIES AG |
|
TR01 | Transfer of patent right |
Effective date of registration: 20130603 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: Munich, Germany Patentee before: Infineon Technologies AG |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160114 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20041124 Termination date: 20160823 |
|
CF01 | Termination of patent right due to non-payment of annual fee |