CN117546272A - 热处理方法、热处理装置及半导体装置的制造方法 - Google Patents

热处理方法、热处理装置及半导体装置的制造方法 Download PDF

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Publication number
CN117546272A
CN117546272A CN202180099818.1A CN202180099818A CN117546272A CN 117546272 A CN117546272 A CN 117546272A CN 202180099818 A CN202180099818 A CN 202180099818A CN 117546272 A CN117546272 A CN 117546272A
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CN
China
Prior art keywords
substrate
optical system
laser light
laser
semiconductor device
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Pending
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CN202180099818.1A
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English (en)
Chinese (zh)
Inventor
前川泰之
小林直之
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Jsw Acdina System Co ltd
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Jsw Acdina System Co ltd
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Publication of CN117546272A publication Critical patent/CN117546272A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Recrystallisation Techniques (AREA)
CN202180099818.1A 2021-06-28 2021-11-17 热处理方法、热处理装置及半导体装置的制造方法 Pending CN117546272A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021106779 2021-06-28
JP2021-106779 2021-06-28
PCT/JP2021/042254 WO2023276182A1 (ja) 2021-06-28 2021-11-17 熱処理方法、熱処理装置、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN117546272A true CN117546272A (zh) 2024-02-09

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Application Number Title Priority Date Filing Date
CN202180099818.1A Pending CN117546272A (zh) 2021-06-28 2021-11-17 热处理方法、热处理装置及半导体装置的制造方法

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JP (1) JP7785771B2 (https=)
CN (1) CN117546272A (https=)
WO (1) WO2023276182A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58103140A (ja) * 1981-12-16 1983-06-20 Fujitsu Ltd レ−ザアニ−ル方法
JP2002231628A (ja) * 2001-02-01 2002-08-16 Sony Corp 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
JP2005333117A (ja) * 2004-04-23 2005-12-02 Semiconductor Energy Lab Co Ltd レーザ照射装置及び半導体装置の作製方法
WO2007067541A2 (en) * 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
JP2011044502A (ja) * 2009-08-19 2011-03-03 Sony Corp 光照射装置及びアニール装置
US10083843B2 (en) * 2014-12-17 2018-09-25 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
JP6754266B2 (ja) * 2016-10-14 2020-09-09 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法

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Publication number Publication date
JP7785771B2 (ja) 2025-12-15
WO2023276182A1 (ja) 2023-01-05
JPWO2023276182A1 (https=) 2023-01-05

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