CN117385346B - 一种晶圆中的铜基化学镀镍钯金的方法 - Google Patents
一种晶圆中的铜基化学镀镍钯金的方法 Download PDFInfo
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- CN117385346B CN117385346B CN202311695475.2A CN202311695475A CN117385346B CN 117385346 B CN117385346 B CN 117385346B CN 202311695475 A CN202311695475 A CN 202311695475A CN 117385346 B CN117385346 B CN 117385346B
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- palladium
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- nickel
- gold
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- 238000007747 plating Methods 0.000 title claims abstract description 107
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 67
- 239000010949 copper Substances 0.000 title claims abstract description 67
- 239000010931 gold Substances 0.000 title claims abstract description 66
- 229910052737 gold Inorganic materials 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000000126 substance Substances 0.000 title claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 168
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 85
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 63
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 29
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000012190 activator Substances 0.000 claims description 40
- 239000000243 solution Substances 0.000 claims description 34
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 claims description 19
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 18
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 16
- 230000033444 hydroxylation Effects 0.000 claims description 15
- 238000005805 hydroxylation reaction Methods 0.000 claims description 15
- 239000008139 complexing agent Substances 0.000 claims description 14
- 230000004913 activation Effects 0.000 claims description 13
- 239000007864 aqueous solution Substances 0.000 claims description 13
- 238000007772 electroless plating Methods 0.000 claims description 13
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 239000003153 chemical reaction reagent Substances 0.000 claims description 10
- 239000003607 modifier Substances 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 230000004048 modification Effects 0.000 claims description 9
- 238000012986 modification Methods 0.000 claims description 9
- 239000011780 sodium chloride Substances 0.000 claims description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 150000001879 copper Chemical class 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 229910052700 potassium Inorganic materials 0.000 claims description 8
- 239000011591 potassium Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 230000003213 activating effect Effects 0.000 claims description 7
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000001103 potassium chloride Substances 0.000 claims description 6
- 235000011164 potassium chloride Nutrition 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 5
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 claims description 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- DGSDBJMBHCQYGN-UHFFFAOYSA-M sodium;2-ethylhexyl sulfate Chemical compound [Na+].CCCCC(CC)COS([O-])(=O)=O DGSDBJMBHCQYGN-UHFFFAOYSA-M 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 3
- 229920002253 Tannate Polymers 0.000 claims description 3
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 claims description 3
- 239000001509 sodium citrate Substances 0.000 claims description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- NHBRUUFBSBSTHM-UHFFFAOYSA-N n'-[2-(3-trimethoxysilylpropylamino)ethyl]ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCNCCN NHBRUUFBSBSTHM-UHFFFAOYSA-N 0.000 claims description 2
- 125000003944 tolyl group Chemical group 0.000 claims description 2
- 125000003277 amino group Chemical group 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 16
- -1 palladium ions Chemical class 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 150000002940 palladium Chemical class 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 28
- 239000010410 layer Substances 0.000 description 24
- 230000000694 effects Effects 0.000 description 18
- PFRMOIHERAVMQV-UHFFFAOYSA-N S(=O)(=O)(O)O.C(CCCCC(C)C)[Na] Chemical compound S(=O)(=O)(O)O.C(CCCCC(C)C)[Na] PFRMOIHERAVMQV-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000003466 welding Methods 0.000 description 7
- 238000009736 wetting Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 238000012797 qualification Methods 0.000 description 6
- 239000012752 auxiliary agent Substances 0.000 description 5
- 229910001453 nickel ion Inorganic materials 0.000 description 5
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 2
- 235000011130 ammonium sulphate Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229960001484 edetic acid Drugs 0.000 description 2
- 125000000031 ethylamino group Chemical group [H]C([H])([H])C([H])([H])N([H])[*] 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002815 nickel Chemical class 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000001632 sodium acetate Substances 0.000 description 2
- 235000017281 sodium acetate Nutrition 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 2
- IEKHISJGRIEHRE-UHFFFAOYSA-N 16-methylheptadecanoic acid;propan-2-ol;titanium Chemical group [Ti].CC(C)O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O IEKHISJGRIEHRE-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 1
- 239000002671 adjuvant Substances 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- DAJSVUQLFFJUSX-UHFFFAOYSA-M sodium;dodecane-1-sulfonate Chemical compound [Na+].CCCCCCCCCCCCS([O-])(=O)=O DAJSVUQLFFJUSX-UHFFFAOYSA-M 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
Abstract
本发明属于金属镀层,具体公开一种晶圆中的铜基化学镀镍钯金的方法。本发明通过对铜基进行改性处理,提高铜基对活化钯中的钯离子进行定位捕获能力,降低后续镀层的渗镀或漏镀的风险,同时提高镀镍钯金镀层对焊料润湿性。
Description
技术领域
本发明属于金属镀层,具体涉及一种晶圆中的铜基化学镀镍钯金的方法。
背景技术
扇出封装是晶圆的先进封装主流之一,其中,以倒装芯片安装方式进行封装,并将芯片中的线路引出。目前已被利用的倒装芯片的引出方法中,主要以凸点的突起状端子进行电连接,涉及在芯片的连接端子形成镍金或镍钯金无电镀膜,在其上通过植球工艺将焊料形成凸点。
晶圆上的连接端的材质一般是铜基,常使用化学镀的方式在其上形成镍金或镍钯金的镀膜。镍金或镍钯金工艺集可焊性、可接触导通性、可打线和可散热等功能于一体,已经成为了晶圆上铜基底表面处理的主流之一。
无论是镀镍金还是镍钯金,都需先在铜基上镀上一层镍金属层,但因化学镀不能如电镀一样具有方向性驱动镍离子还原沉积,镍离子无法在铜基上实现自发的还原沉积镍金属层。目前,可以通过先在铜基上进行物理或化学活化的方式,在铜基表面形成活化层,催化镍离子还原沉积形成镍金属层。使用活化钯对铜基进行表面处理是最为有效的活化方式之一,其活化钯的催化效果好。但是,常规的活化钯液一般与铜基的吸附性或接触性不好,且不仅会在需要镀金属层的铜基面存在活性钯,而且在非铜基面或非镀区也会吸附活性钯,导致后续镀层时会在非铜基面或非镀层区域(例如防焊油墨、干膜或裸露的线路板基材)形成不需要的金属镀层,导致出现“渗镀”现象。轻微时,在芯片的线路板面上产生点状沾金,严重时将导致铜基面周围延长或扩宽,更严重时将导致线路间或接触垫间的架桥短路,特别是在线宽和线距为约75μm或更小的高密度电线路中更容易出现短路现象。同时,因化学镀没有方向性的,化学镀可能产生漏镀的现象。且镀层的质量直接影响后续焊料的焊接的凸点的效果,所以还应该要求该镀层具有良好的焊料润湿性。
发明内容
针对上述现有技术涉及的渗镀、漏镀及镀层润湿性差等问题,本发明将提供一种晶圆中的铜基化学镀镍钯金的方法。
为实现上述目的,具体包括以下技术方案:
一种晶圆中的铜基化学镀镍钯金的方法,包括如下步骤:
(1)在晶圆上涂覆上PI层,经过曝光、显影工艺,暴露出铜基;
(2)对晶圆依次进行除油处理、微蚀处理;
(3)对铜基表面进行改性处理;
(4)使用钯活化剂对铜基进行活化处理;
(5)对活化后的铜基分别进行化学镀镍、镀钯、镀金、水洗、干燥;
(6)除胶、清洗、干燥;
步骤(3)所述改性处理具体包括如下步骤:
(3-1)使用羟基化试剂对铜基依次进行表面羟基化、水洗;所述羟基化试剂包括过氧化氢和硫酸或氨水;
(3-2)使用改性液对铜基表面进行改性处理、干燥;所述改性液包括改性剂和溶剂;所述改性剂为含端氨基或甲基的硅烷偶联剂,所述溶剂为甲苯或乙醇。
因羟基化试剂针对的是铜基进行羟基化,所以后续的改性剂会在铜基上进行改性,改性后的铜基表面含有带端-NH2或-CH3的自组装单层,该端-NH2或-CH3可以定位捕获钯活化剂中的Pd的离子,更利于后续在铜基位点上催化沉积镀Ni层,同时该端-NH2或-CH3对后续镀的Ni离子、Pd离子、Au离子都具有一定程度的捕获、定位效果,利用这种方式定点镀镍钯金,降低渗镀、漏镀的风险,提高化镀的成功率。
同时,因本发明改性后的铜基表面可以定位捕获金属离子,化镀后的镍钯金镀层分散更均匀、尺寸更均匀、镀层更致密、抵抗氧化的效果更优,使得镀层可以具有优异的焊料润湿性,提高后续凸点焊接效果。
优选地,步骤(3-2)中,所述改性剂包括3-[2-(2-氨基乙基氨基)乙基氨基]丙基-三甲氧基硅烷(3-[2-(2-Aminoethylamino)ethylamino]-propyltrimethoxysilane,C10H27N3O3Si)、十八烷基三氯硅烷(OTS)、3-氨基丙基三乙氧基硅烷(APTES)中的至少一种。其中,3-[2-(2-氨基乙基氨基)乙基氨基]丙基-三甲氧基硅烷的改性效果最优。
优选地,步骤(3-1)中,所述表面羟基化的时间为5-20min;所述羟基化试剂中,过氧化氢的质量浓度为0.01-2%,硫酸或氨水的质量浓度为0.01-5%;(3-2)所述改性剂的浓度为0.2mM-2mM,所述改性处理的时间为5-20min。
优选地,步骤(4)使用钯活化剂对铜基进行活化处理;所述钯活化剂为含有钯的溶液,且所述钯活化剂中钯的含量为10-200ppm;所述钯活化剂对铜基进行活化的时间为30s-5min。
进一步优选地,步骤(4)所述钯活化剂包括钯盐、络合剂和pH调节剂,所述络合剂为乙二胺四乙酸四钠、柠檬酸钠、单宁酸钠中的至少一种。
优选地,步骤(4)所述pH调节剂为盐酸、醋酸、硫酸中的至少一种。
进一步优选地,步骤(4)所述钯活化剂还包括表面活性剂和其他助剂。
进一步优选地,所述表面活性剂包括异辛基硫酸钠,在钯活化剂中,所述表面活性剂浓度为5-15ppm。
钯活化剂含有络合剂,可以进一步起到提高钯活化剂的活化效果。
优选地,所述钯活化剂中络合剂的含量为0.05-2g/L。
优选地,步骤(4)所述钯活化剂的pH值为4-8。
优选地,步骤(4)所述钯活化剂为氯化钯配合物溶液;所述氯化钯配合物溶液配制方式为:将氯化钯固体在超声和/或搅拌辅助下溶解于氯化钠或氯化钾的水溶液中。
进一步优选地,所述氯化钠或氯化钾的浓度为0.1-2mol/L。
将不溶于水的氯化钯溶于氯化钠或氯化钾中,Pd离子通过与溶液中的Cl离子配位,形成水溶性的Pd-Cl配位的配合物,因该配位化合物是一种带负电荷,更易与改性后的铜基表面结合,提高钯活化剂活化效果,更利于后续的化镀金属层。
优选地,步骤(4)所述钯活化剂为六氯钯(IV)酸钾或六氯钯(IV)酸钠的水溶液,且在使用六氯钯(IV)酸钾或六氯钯(IV)酸钠水溶液对铜基进行活化处理时,同时辅助超声波。
在Pd的活化下,超声使水声解产生H自由基还原Pd(IV),进一步活化改性后的铜基表面,提高钯活化剂活化效果,更利于后续的化镀金属层。
进一步优选地,所述超声波的功率为20-100W,超声的时间为2-15min。
超声功率选择上述范围,活化效果更优优,超声功率过低,活化效果降低,超声功率过功率,易导致晶圆或其部件存在额外的损失。
优选地,步骤(5)中,化学镀镍、镀钯、镀金对应的镀液没有特殊的要求,可以使用市售的镀液,也可使用自制的镀液,如所述化学镀镍中,镀镍液为镍盐10-30g/L(如硫酸镍),次磷酸钠20-50g/L,醋酸钠10-20g/L,乳酸10-25g/L,苹果酸3-5g/L,丁二酸3-5g/L,时间为2-20min;化学镀钯中,镀钯液的钯离子浓度为0.3-0.6g/L,温度为60-70℃,时间5-15min;化学镀金中,镀金溶液的金离子浓度为0.3-0.6g/L,温度为75-85℃,时间为5-10min。
相对于现有技术,本发明具有以下有益效果:本发明通过对铜基进行改性处理,提高铜基对活化钯中的钯离子进行定位捕获能力,降低后续镀层的渗镀或漏镀的风险,同时提高镀镍钯金镀层对焊料润湿性。
具体实施方式
为更好地说明本发明的目的、技术方案和优点,下面将通过具体实施例对本发明作进一步说明。实施例和/或对比例中所用的试验方法如无特殊说明,均为常规方法;所用的材料、试剂等,如无特殊说明,均可从商业途径得到。
实施例1
一种晶圆中的铜基化学镀镍钯金的方法,包括如下步骤:
(1)在晶圆上涂覆上PI层,经过曝光、显影工艺,暴露出需要镀镍钯金镀层的铜基,该PI层可以保护非镀区,该PI层的厚度可以基于所需的镀层厚度及后续的凸点高度进行合理的设置旋涂PI胶的工艺参数并实现达到所需的厚度,PI使用常规的PI光刻胶即可,曝光、显影工艺也使用常规的工艺就能实现;
(2)使用常规的除油、微蚀剂对晶圆依次进行除油处理、微蚀处理,如除油液的配方为:NaOH 1mol/L、Na2CO31mol/L、十二烷基磺酸钠0.1mol/L,在此除油液中下50℃下浸洗10分钟,取出后用水清洗;微蚀剂的配方:100g/L过硫酸钠和2%(v/v)硫酸水溶液,在30℃,微蚀处理时间为2min;并再用1%的(v/v)硫酸处理2min;
(3)对铜基表面进行改性处理,具体包括:
(3-1)使用羟基化试剂对铜基依次进行表面羟基化处理8min、水洗;所述羟基化试剂为180mL/L的过氧化氢(28-30%H2O2)、180mL/L的氨水(25-28%NH3H2O)的水溶液;
(3-2)使用1mM的3-[2-(2-氨基乙基氨基)乙基氨基]丙基-三甲氧基硅烷改性剂的乙醇溶液对铜基表面进行改性处理10min,干燥;
(4)使用钯活化剂对铜基进行活化处理2min;其中,钯活化剂的配制为:将氯化钯超声辅助下溶于盐酸溶液中,待溶解后再加入异辛基硫酸钠,搅拌溶解,其中,氯化钯的浓度为50ppm,pH为4,异辛基硫酸钠浓度为10ppm。
(5)对活化后的铜基分别进行化学镀镍、镀钯、镀金、水洗、干燥;其中,化学镀镍、镀钯、镀金所用的镀液分别是含有镍离子、钯离子、金离子的镀液,为了更好的效果,可以添加一些辅助助剂,如含镍离子的镀液中镍盐(硫酸镍)20g/L,助剂包括次磷酸钠25 g/L,醋酸钠18 g/L,乳酸20 g/L,苹果酸5 g/L,丁二酸4.5 g/L中的至少一种,本次使用上述5种浓度的助剂;含钯离子的镀液中,钯离子浓度为0.5g/L,pH 6.5,温度为65℃,时间8min,也可以添加一些常规助剂进行调节,如表面活性剂乙二胺四乙酸四钠、有机酸、乙二胺四乙酸、盐酸或硫酸铵等,也可使用市售的镀液,本次含钯镀液还包括乙二胺0.5mol/L,乙二胺四乙酸0.05mol/L,次磷酸钠0.2mol/L;含金离子的镀金溶液的金离子浓度为0.5g/L,温度为80℃,时间为10min,也可以添加一些常规助剂进行调节,如表面活性剂乙二胺四乙酸四钠等,有机酸、盐酸或硫酸铵等,也可使用市售的镀液如浸金5185系列药水,本次使用浸金5185系列药水;镀镍钯金的镀层厚度约在0.1-5μm,可以基于实际需要延长镀膜的实际时间、温度、镀液浓度等参数进行控制镀膜的厚度;
(6)使用常规的除胶液进行PI除胶、清洗、干燥;
镀层的缺陷情况评估:使用AOI(Automated Optical Inspection,自动光学检测)检测化学镀后的镍钯金镀层的渗镀、漏镀缺陷及合格率情况,同时,也可以使用肉眼观察镀层的缺陷,并进行缺陷统计,与预设的镀层数量相比,计算镀层的合格率。
模拟镀层的焊料润湿性评估:选取部分镍钯金镀层区域作为各评述的样品,在镍钯金镀层上刷焊球,将在预定的钎焊温度条件保持一定时间,施加高温的热历程,焊球回流,焊接成功,焊球料为无Pb焊料Sn-3.0Ag-0.5Cu,助焊剂使用非活性型R-type焊剂。利用显微镜对焊点进行拍摄测量,并利用AutoCAD软件标注角度,测定润湿角,润湿角越小,润湿性能越好。
实施例2
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(3-2)中,本实施例的改性剂为等浓度的3-氨基丙基三乙氧基硅烷(APTES)。
实施例3
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(3-2)中,本实施例的改性剂为等浓度的十八烷基三氯硅烷(OTS)。
实施例4
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(4)中,本实施例的钯活化剂还加入了络合剂乙二胺四乙酸四钠,在其中的浓度为1g/L。
实施例5
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(4)中,本实施例的钯活化剂还加入了络合剂乙二胺四乙酸四钠,在其中的浓度为0.05g/L。
实施例6
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(4)中,本实施例的钯活化剂还加入了络合剂乙二胺四乙酸四钠,在其中的浓度为2g/L。
实施例7
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(4)中,本实施例的钯活化剂还加入了络合剂柠檬酸钠,在其中的浓度为1g/L。
实施例8
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(4)中,本实施例的钯活化剂还加入了络合剂单宁酸钠,在其中的浓度为1g/L。
实施例9
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(4)中,本实施例的钯活化剂的配制为:将氯化钯固体在搅拌辅助下溶解于1mol/L氯化钠的水溶液,待氯化钯完全溶解后,再加入异辛基硫酸钠,搅拌溶解,其中,氯化钯的浓度为50ppm,异辛基硫酸钠浓度为10ppm。
实施例10
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(4)中,本实施例的钯活化剂的配制为:将氯化钯固体在搅拌辅助下溶解于0.1mol/L氯化钠的水溶液,搅拌与实施例9相同的时间下,仍存在氯化钯颗粒,有可能是因为氯离子不足,无法与钯离子配位,形成可溶性的钯配合物,再在超声辅助下进行溶解,待完全溶解后,再加入异辛基硫酸钠,搅拌溶解,其中,氯化钯的浓度为50ppm,异辛基硫酸钠浓度为10ppm。
实施例11
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(4)中,本实施例的钯活化剂的配制为:将氯化钯固体在搅拌辅助下溶解于2mol/L氯化钠的水溶液,待完全溶解后,再加入异辛基硫酸钠,搅拌溶解,其中,氯化钯的浓度为50ppm,异辛基硫酸钠浓度为10ppm。
实施例12
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本实施例的区别在于,步骤(4)中,本实施例的钯活化剂的配制为:将六氯钯(IV)酸钾配置形成水溶液,再加入异辛基硫酸钠,搅拌溶解,其中,六氯钯(IV)酸钾的浓度为50ppm,异辛基硫酸钠浓度为10ppm,然后将铜基在超声功率为30W的情况下浸渍在上述配置得到的钯活化剂中进行活化10min。
实施例13
一种晶圆中的铜基化学镀镍钯金的方法,与实施例12相比,本实施例的区别在于,步骤(4)中,超声的功率为20W。
实施例14
一种晶圆中的铜基化学镀镍钯金的方法,与实施例12相比,本实施例的区别在于,步骤(4)中,超声的功率为100W。
对比例1
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本对比例的区别在于,本对比例没有进行步骤(3)对铜基表面进行改性处理。
对比例2
一种晶圆中的铜基化学镀镍钯金的方法,与实施例1相比,本对比例的区别在于,步骤(3-2)中,本对比例的改性剂为等浓度的三异硬脂酰基钛酸异丙酯。
表1
由实施例1-3和对比例1可知,本发明通过对铜基进行表面改性处理,可以降低漏镀、渗镀镍钯金镀层的缺陷,提高镀层的合格率,同时降低镍钯金的润湿角,提高焊料的焊接效果。
由实施例1-3和对比例2可知,本发明使用硅烷偶联剂对铜基表面改性处理,才能取得良好的改性效果,才能实现降低漏镀、渗镀镍钯金镀层的缺陷,提高镀层的合格率,同时降低镍钯金的润湿角,提高焊料的焊接效果。
由实施例1、4-8可知,在钯活化剂添加络合剂,可以在改性铜基表面进一步提高把活化效果,降低漏镀、渗镀镍钯金镀层的缺陷,提高镀层的合格率,同时降低镍钯金的润湿角,提高焊料的焊接效果。
由实施例1、4-8、9-11、12-14可知,可以进一步更换不同的钯活化剂,进一步降低漏镀、渗镀镍钯金镀层的缺陷,提高镀层的合格率,同时进一步降低镍钯金的润湿角,提高焊料的焊接效果,其中Pd-Cl配位的配合物的钯活化剂和超声辅助六氯钯(IV)酸钾钯活化的方式,较单纯的络合剂辅助钯活化剂的活化效果更优。
最后所应当说明的是,以上实施例仅用以说明本发明的技术方案而非对本发明保护范围的限制,尽管参照较佳实施例对本发明作了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的实质和范围。
Claims (6)
1.一种晶圆中的铜基化学镀镍钯金的方法,其特征在于,包括如下步骤:
(1)在晶圆上涂覆上PI层,经过曝光、显影工艺,暴露出铜基;
(2)对晶圆依次进行除油处理、微蚀处理;
(3)对铜基表面进行改性处理;
(4)使用钯活化剂对铜基进行活化处理;
(5)对活化后的铜基分别进行化学镀镍、镀钯、镀金、水洗、干燥;
(6)除胶、清洗、干燥;
步骤(3)所述改性处理具体包括如下步骤:
(3-1)使用羟基化试剂对铜基依次进行表面羟基化、水洗;所述羟基化试剂包括过氧化氢和硫酸或氨水;所述表面羟基化的时间为5-20min;所述羟基化试剂中,过氧化氢的质量浓度为0.01-2%,硫酸或氨水的质量浓度为0.01-5%;
(3-2)使用改性液对铜基表面进行改性处理、干燥;所述改性液包括改性剂和溶剂;所述改性剂为含端氨基或甲基的硅烷偶联剂,所述溶剂为甲苯或乙醇;所述改性剂包括3-[2-(2-氨基乙基氨基)乙基氨基]丙基-三甲氧基硅烷、十八烷基三氯硅烷、3-氨基丙基三乙氧基硅烷中的至少一种;在改性液中,所述改性剂的浓度为0.2mM-2mM,所述改性处理的时间为5-20min;
步骤(4)所述钯活化剂为氯化钯配合物溶液或六氯钯(IV)酸钾或六氯钯(IV)酸钠的水溶液,所述钯活化剂还包括络合剂和pH调节剂;所述络合剂为乙二胺四乙酸四钠、柠檬酸钠、单宁酸钠中的至少一种;所述pH调节剂为盐酸、醋酸、硫酸中的至少一种;所述钯活化剂中络合剂的含量为0.05-2g/L;所述钯活化剂的pH值为4-8;所述钯活化剂中钯的含量为10-200ppm。
2.如权利要求1所述的晶圆中的铜基化学镀镍钯金的方法,其特征在于,步骤(4)所述钯活化剂为氯化钯配合物溶液时,所述氯化钯配合物溶液配制方式为:将氯化钯固体在超声和/或搅拌辅助下溶解于氯化钠或氯化钾的水溶液中。
3.如权利要求2所述的晶圆中的铜基化学镀镍钯金的方法,其特征在于,在氯化钠或氯化钾的水溶液中,所述氯化钠或氯化钾的浓度为0.1-2mol/L。
4.如权利要求1所述的晶圆中的铜基化学镀镍钯金的方法,其特征在于,步骤(4)所述钯活化剂为六氯钯(IV)酸钾或六氯钯(IV)酸钠的水溶液,且在使用六氯钯(IV)酸钾或六氯钯(IV)酸钠水溶液对铜基进行活化处理时,同时辅助超声波。
5.如权利要求4所述的晶圆中的铜基化学镀镍钯金的方法,其特征在于,所述超声波的功率为20-100W,超声的时间为2-15min。
6.如权利要求1所述的晶圆中的铜基化学镀镍钯金的方法,其特征在于,步骤(4)中,所述活化处理的时间为30s-5min;所述钯活化剂中还包括表面活性剂,所述钯活化剂中所述表面活性剂浓度为5-15ppm,所述表面活性剂包括异辛基硫酸钠。
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