CN117222944A - 光致抗蚀剂用树脂、光致抗蚀剂和固化物 - Google Patents

光致抗蚀剂用树脂、光致抗蚀剂和固化物 Download PDF

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Publication number
CN117222944A
CN117222944A CN202280026236.5A CN202280026236A CN117222944A CN 117222944 A CN117222944 A CN 117222944A CN 202280026236 A CN202280026236 A CN 202280026236A CN 117222944 A CN117222944 A CN 117222944A
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CN
China
Prior art keywords
monomer
photoresist
meth
acrylate
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280026236.5A
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English (en)
Chinese (zh)
Inventor
山田彩花
河野瑞贵
长泽敦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NOF Corp
Original Assignee
NOF Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NOF Corp filed Critical NOF Corp
Publication of CN117222944A publication Critical patent/CN117222944A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CN202280026236.5A 2021-04-06 2022-03-15 光致抗蚀剂用树脂、光致抗蚀剂和固化物 Pending CN117222944A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-064980 2021-04-06
JP2021064980 2021-04-06
PCT/JP2022/011547 WO2022215456A1 (ja) 2021-04-06 2022-03-15 フォトレジスト用樹脂、フォトレジストおよび硬化物

Publications (1)

Publication Number Publication Date
CN117222944A true CN117222944A (zh) 2023-12-12

Family

ID=83546058

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280026236.5A Pending CN117222944A (zh) 2021-04-06 2022-03-15 光致抗蚀剂用树脂、光致抗蚀剂和固化物

Country Status (5)

Country Link
JP (1) JPWO2022215456A1 (https=)
KR (1) KR20230167373A (https=)
CN (1) CN117222944A (https=)
TW (1) TW202307569A (https=)
WO (1) WO2022215456A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10161310A (ja) * 1996-12-04 1998-06-19 Jsr Corp 感放射線性樹脂組成物
JP4753036B2 (ja) 2005-07-25 2011-08-17 日産化学工業株式会社 ポジ型感光性樹脂組成物及びそれから得られる硬化膜
JP2007171311A (ja) 2005-12-19 2007-07-05 Sekisui Chem Co Ltd レジスト材料、エッチングパターンの形成方法及び導電性パターンの形成方法
JP5155764B2 (ja) * 2007-08-20 2013-03-06 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5664299B2 (ja) * 2011-02-07 2015-02-04 東洋インキＳｃホールディングス株式会社 感光性着色組成物及びそれを用いたカラーフィルタ
KR101612673B1 (ko) 2015-03-11 2016-04-14 동우 화인켐 주식회사 네가티브형 감광성 수지 조성물
JP2017025236A (ja) 2015-07-24 2017-02-02 明和化成株式会社 ノボラック型フェノール樹脂、その製造方法、及びそれを含むフォトレジスト組成物
TWI709576B (zh) * 2016-02-23 2020-11-11 日商迪愛生股份有限公司 彩色阻劑組成物、濾色器及彩色阻劑組成物之製造方法
JP6577979B2 (ja) * 2016-07-21 2019-09-18 富士フイルム株式会社 積層体及び液晶表示装置

Also Published As

Publication number Publication date
KR20230167373A (ko) 2023-12-08
TW202307569A (zh) 2023-02-16
WO2022215456A1 (ja) 2022-10-13
JPWO2022215456A1 (https=) 2022-10-13

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