CN116918248B - 高频功率放大器件 - Google Patents

高频功率放大器件 Download PDF

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Publication number
CN116918248B
CN116918248B CN202280009631.2A CN202280009631A CN116918248B CN 116918248 B CN116918248 B CN 116918248B CN 202280009631 A CN202280009631 A CN 202280009631A CN 116918248 B CN116918248 B CN 116918248B
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CN
China
Prior art keywords
amplifier
semiconductor device
power supply
carrier
peak
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202280009631.2A
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English (en)
Chinese (zh)
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CN116918248A (zh
Inventor
大桥一彦
上谷昌稔
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of CN116918248A publication Critical patent/CN116918248A/zh
Application granted granted Critical
Publication of CN116918248B publication Critical patent/CN116918248B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21127—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers the input bias current of a power amplifier being controlled, e.g. by an active current source or a current mirror

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
CN202280009631.2A 2021-02-18 2022-02-17 高频功率放大器件 Active CN116918248B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163150757P 2021-02-18 2021-02-18
US63/150,757 2021-02-18
PCT/JP2022/006393 WO2022176947A1 (ja) 2021-02-18 2022-02-17 高周波電力増幅装置

Publications (2)

Publication Number Publication Date
CN116918248A CN116918248A (zh) 2023-10-20
CN116918248B true CN116918248B (zh) 2024-03-19

Family

ID=82930669

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280009631.2A Active CN116918248B (zh) 2021-02-18 2022-02-17 高频功率放大器件

Country Status (4)

Country Link
US (2) US11942911B2 (https=)
JP (1) JP7351036B2 (https=)
CN (1) CN116918248B (https=)
WO (1) WO2022176947A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12199572B2 (en) * 2020-01-10 2025-01-14 Sumitomo Electric Industries, Ltd. High-frequency amplifier
WO2024214131A1 (ja) * 2023-04-10 2024-10-17 三菱電機株式会社 電力増幅器
CN117276976A (zh) * 2023-09-07 2023-12-22 东莞立讯技术有限公司 舌板

Citations (6)

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JP2004304628A (ja) * 2003-03-31 2004-10-28 Tdk Corp パワーアンプモジュール用多層基板及びパワーアンプモジュール
JP2007135015A (ja) * 2005-11-10 2007-05-31 Toshiba Corp 増幅器モジュール、無線送信装置
CN102549915A (zh) * 2009-09-28 2012-07-04 日本电气株式会社 多尔蒂放大器
CN102577104A (zh) * 2009-10-23 2012-07-11 日本碍子株式会社 多赫蒂放大器用合成器
CN109428557A (zh) * 2017-08-25 2019-03-05 株式会社村田制作所 功率放大电路
WO2020203507A1 (ja) * 2019-04-01 2020-10-08 パナソニックセミコンダクターソリューションズ株式会社 モノリシック半導体装置およびハイブリッド半導体装置

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
JPH04150202A (ja) 1990-10-09 1992-05-22 Mitsubishi Electric Corp 立体交差回路装置
JPH06245174A (ja) 1993-02-22 1994-09-02 Hitachi Ltd 広帯域増幅器及びこれを用いた表示装置
US5546048A (en) 1992-09-04 1996-08-13 Hitachi, Ltd. Amplifier and display apparatus employing the same
JP2996906B2 (ja) 1995-11-29 2000-01-11 株式会社東芝 モノリシックマイクロ波集積回路
JP3494120B2 (ja) 2000-04-28 2004-02-03 株式会社村田製作所 積層型ｌｃ部品
JP2002164701A (ja) 2000-11-24 2002-06-07 Sharp Corp 高周波回路
KR100817070B1 (ko) 2006-10-30 2008-03-26 삼성전자주식회사 다중 그라운드 쉴딩 반도체 패키지, 그 패키지의 제조방법 및 그 그라운드 쉴딩을 이용한 노이즈 방지방법
US7619468B1 (en) 2008-09-30 2009-11-17 Nortel Networks Limited Doherty amplifier with drain bias supply modulation
JP2010098439A (ja) 2008-10-15 2010-04-30 Mitsubishi Electric Corp 高周波モジュール及びｇｐｓ受信装置
JP2011250360A (ja) 2010-05-31 2011-12-08 Toshiba Corp 高周波モジュール
US7990223B1 (en) 2010-05-31 2011-08-02 Kabushiki Kaisha Toshiba High frequency module and operating method of the same
JP2013192178A (ja) 2012-03-15 2013-09-26 Nippon Dempa Kogyo Co Ltd 伝送線路及び電子部品
JP6076068B2 (ja) 2012-12-17 2017-02-08 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US9800207B2 (en) 2014-08-13 2017-10-24 Skyworks Solutions, Inc. Doherty power amplifier combiner with tunable impedance termination circuit
US9871501B2 (en) * 2015-06-22 2018-01-16 Nxp Usa, Inc. RF circuit with multiple-definition RF substrate and conductive material void under a bias line
US9647611B1 (en) 2015-10-28 2017-05-09 Nxp Usa, Inc. Reconfigurable power splitters and amplifiers, and corresponding methods
US12199572B2 (en) * 2020-01-10 2025-01-14 Sumitomo Electric Industries, Ltd. High-frequency amplifier
WO2022118891A1 (ja) * 2020-12-04 2022-06-09 株式会社村田製作所 高周波モジュール及び通信装置
WO2022137708A1 (ja) * 2020-12-25 2022-06-30 株式会社村田製作所 高周波モジュール及び通信装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004304628A (ja) * 2003-03-31 2004-10-28 Tdk Corp パワーアンプモジュール用多層基板及びパワーアンプモジュール
JP2007135015A (ja) * 2005-11-10 2007-05-31 Toshiba Corp 増幅器モジュール、無線送信装置
CN102549915A (zh) * 2009-09-28 2012-07-04 日本电气株式会社 多尔蒂放大器
CN102577104A (zh) * 2009-10-23 2012-07-11 日本碍子株式会社 多赫蒂放大器用合成器
CN109428557A (zh) * 2017-08-25 2019-03-05 株式会社村田制作所 功率放大电路
WO2020203507A1 (ja) * 2019-04-01 2020-10-08 パナソニックセミコンダクターソリューションズ株式会社 モノリシック半導体装置およびハイブリッド半導体装置

Also Published As

Publication number Publication date
US20240039487A1 (en) 2024-02-01
JP7351036B2 (ja) 2023-09-26
US20240195369A1 (en) 2024-06-13
JPWO2022176947A1 (https=) 2022-08-25
CN116918248A (zh) 2023-10-20
US12224723B2 (en) 2025-02-11
WO2022176947A1 (ja) 2022-08-25
US11942911B2 (en) 2024-03-26

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