CN116918042A - 蚀刻处理方法 - Google Patents

蚀刻处理方法 Download PDF

Info

Publication number
CN116918042A
CN116918042A CN202280005768.0A CN202280005768A CN116918042A CN 116918042 A CN116918042 A CN 116918042A CN 202280005768 A CN202280005768 A CN 202280005768A CN 116918042 A CN116918042 A CN 116918042A
Authority
CN
China
Prior art keywords
etching
wafer
gas
silicon oxide
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280005768.0A
Other languages
English (en)
Chinese (zh)
Inventor
服部孝司
山田将贵
秋永启佑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of CN116918042A publication Critical patent/CN116918042A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3344—Problems associated with etching isotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN202280005768.0A 2022-02-14 2022-02-14 蚀刻处理方法 Pending CN116918042A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/005550 WO2023152941A1 (ja) 2022-02-14 2022-02-14 エッチング処理方法

Publications (1)

Publication Number Publication Date
CN116918042A true CN116918042A (zh) 2023-10-20

Family

ID=87563974

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280005768.0A Pending CN116918042A (zh) 2022-02-14 2022-02-14 蚀刻处理方法

Country Status (6)

Country Link
US (1) US12444613B2 (https=)
JP (1) JP7474903B2 (https=)
KR (1) KR102864347B1 (https=)
CN (1) CN116918042A (https=)
TW (1) TWI877570B (https=)
WO (1) WO2023152941A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117241483A (zh) * 2023-10-25 2023-12-15 广东达源设备科技有限公司 用于电路板生产的喷淋装置和方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022125685A (ja) * 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法
TWI903628B (zh) * 2024-07-08 2025-11-01 矽品精密工業股份有限公司 熱處理設備及方法
CN120529700B (zh) * 2025-07-21 2025-11-07 晶科能源(海宁)有限公司 光伏电池及其制造方法、叠层电池、光伏组件

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5022961B1 (en) 1989-07-26 1997-05-27 Dainippon Screen Mfg Method for removing a film on a silicon layer surface
JP2632293B2 (ja) 1989-07-26 1997-07-23 大日本スクリーン製造株式会社 シリコン自然酸化膜の選択的除去方法
JP2632262B2 (ja) 1991-08-20 1997-07-23 大日本スクリーン製造株式会社 シリコンウエハ上のコンタクトホール内の自然酸化膜の除去方法
JP3329038B2 (ja) 1993-12-13 2002-09-30 ソニー株式会社 ドライエッチング方法
JP2004127990A (ja) 2002-09-30 2004-04-22 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2004296467A (ja) 2003-03-25 2004-10-21 Hitachi Kokusai Electric Inc 基板処理装置
JP2005161493A (ja) 2003-12-04 2005-06-23 Toyota Central Res & Dev Lab Inc マイクロ構造体の製造方法とその製造装置
US7078814B2 (en) 2004-05-25 2006-07-18 International Business Machines Corporation Method of forming a semiconductor device having air gaps and the structure so formed
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
JP5859262B2 (ja) 2011-09-29 2016-02-10 東京エレクトロン株式会社 堆積物除去方法
JP5486632B2 (ja) 2012-04-12 2014-05-07 日本電信電話株式会社 電極形成方法
JP2016025195A (ja) 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
JP6327295B2 (ja) 2015-08-12 2018-05-23 セントラル硝子株式会社 ドライエッチング方法
KR101874822B1 (ko) 2016-04-01 2018-07-06 주식회사 테스 실리콘산화막의 선택적 식각 방법
WO2017176027A1 (ko) 2016-04-05 2017-10-12 주식회사 테스 실리콘산화막의 선택적 식각 방법
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
JP7109165B2 (ja) 2017-05-30 2022-07-29 東京エレクトロン株式会社 エッチング方法
JP6796559B2 (ja) 2017-07-06 2020-12-09 東京エレクトロン株式会社 エッチング方法および残渣除去方法
JP6994381B2 (ja) 2017-12-22 2022-01-14 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法
JP7204348B2 (ja) * 2018-06-08 2023-01-16 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US11715641B2 (en) * 2018-09-13 2023-08-01 Central Glass Company, Limited Method and device for etching silicon oxide
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
JP7294999B2 (ja) 2019-12-04 2023-06-20 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法
US12371618B2 (en) 2020-03-13 2025-07-29 Central Glass Company, Limited Dry etching method, method for producing semiconductor device, and dry etching gas composition
WO2021205632A1 (ja) 2020-04-10 2021-10-14 株式会社日立ハイテク エッチング方法
JP7550534B2 (ja) 2020-05-15 2024-09-13 東京エレクトロン株式会社 エッチング方法およびエッチング装置
US11295960B1 (en) 2021-03-09 2022-04-05 Hitachi High-Tech Corporation Etching method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117241483A (zh) * 2023-10-25 2023-12-15 广东达源设备科技有限公司 用于电路板生产的喷淋装置和方法
CN117241483B (zh) * 2023-10-25 2024-04-12 广东达源设备科技有限公司 用于电路板生产的喷淋装置和方法

Also Published As

Publication number Publication date
WO2023152941A1 (ja) 2023-08-17
JP7474903B2 (ja) 2024-04-25
JPWO2023152941A1 (https=) 2023-08-17
TW202333229A (zh) 2023-08-16
TWI877570B (zh) 2025-03-21
US12444613B2 (en) 2025-10-14
KR102864347B1 (ko) 2025-09-24
KR20230123009A (ko) 2023-08-22
US20240312789A1 (en) 2024-09-19

Similar Documents

Publication Publication Date Title
CN116918042A (zh) 蚀刻处理方法
CN115116847B (zh) 蚀刻方法
US10497573B2 (en) Selective atomic layer etching of semiconductor materials
KR102590870B1 (ko) 에칭 방법
US20150214066A1 (en) Method for material removal in dry etch reactor
US20190122865A1 (en) Oxygen treatment for nitride etching
US20240290623A1 (en) Processing methods to improve etched silicon-and-germanium-containing material surface roughness
US10755941B2 (en) Self-limiting selective etching systems and methods
CN100362632C (zh) 干蚀刻方法
US9305795B2 (en) Plasma processing method
US10886137B2 (en) Selective nitride removal
TW202405942A (zh) 用於半導體製造的蝕刻方法
US20240282585A1 (en) Treatments to improve etched silicon-and-germanium-containing material surface roughness
WO2025264794A1 (en) Residue removal after etch processes using a boron-containing etchant
WO2024158527A1 (en) Systems and methods for titanium-containing film removal
WO2025198927A1 (en) Systems and methods for selective metal-containing material removal
WO2025226465A1 (en) Self-limited etching of low-k materials
WO2026084923A1 (en) Processing methods to improve etched silicon-and-germanium-containing material surface properties

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination