JPWO2023152941A1 - - Google Patents
Info
- Publication number
- JPWO2023152941A1 JPWO2023152941A1 JP2023500427A JP2023500427A JPWO2023152941A1 JP WO2023152941 A1 JPWO2023152941 A1 JP WO2023152941A1 JP 2023500427 A JP2023500427 A JP 2023500427A JP 2023500427 A JP2023500427 A JP 2023500427A JP WO2023152941 A1 JPWO2023152941 A1 JP WO2023152941A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/694—Inorganic materials composed of nitrides
- H10P14/6943—Inorganic materials composed of nitrides containing silicon
- H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3344—Problems associated with etching isotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3346—Selectivity
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/005550 WO2023152941A1 (ja) | 2022-02-14 | 2022-02-14 | エッチング処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023152941A1 true JPWO2023152941A1 (https=) | 2023-08-17 |
| JPWO2023152941A5 JPWO2023152941A5 (https=) | 2024-01-17 |
| JP7474903B2 JP7474903B2 (ja) | 2024-04-25 |
Family
ID=87563974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023500427A Active JP7474903B2 (ja) | 2022-02-14 | 2022-02-14 | エッチング処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12444613B2 (https=) |
| JP (1) | JP7474903B2 (https=) |
| KR (1) | KR102864347B1 (https=) |
| CN (1) | CN116918042A (https=) |
| TW (1) | TWI877570B (https=) |
| WO (1) | WO2023152941A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022125685A (ja) * | 2021-02-17 | 2022-08-29 | 株式会社Kelk | 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法 |
| CN117241483B (zh) * | 2023-10-25 | 2024-04-12 | 广东达源设备科技有限公司 | 用于电路板生产的喷淋装置和方法 |
| TWI903628B (zh) * | 2024-07-08 | 2025-11-01 | 矽品精密工業股份有限公司 | 熱處理設備及方法 |
| CN120529700B (zh) * | 2025-07-21 | 2025-11-07 | 晶科能源(海宁)有限公司 | 光伏电池及其制造方法、叠层电池、光伏组件 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019212872A (ja) * | 2018-06-08 | 2019-12-12 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| JP2021089973A (ja) * | 2019-12-04 | 2021-06-10 | 株式会社Ｓｃｒｅｅｎホールディングス | エッチング方法 |
| WO2021182311A1 (ja) * | 2020-03-13 | 2021-09-16 | セントラル硝子株式会社 | ドライエッチング方法、半導体デバイスの製造方法及びドライエッチングガス組成物 |
| JP2021180281A (ja) * | 2020-05-15 | 2021-11-18 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5022961B1 (en) | 1989-07-26 | 1997-05-27 | Dainippon Screen Mfg | Method for removing a film on a silicon layer surface |
| JP2632293B2 (ja) | 1989-07-26 | 1997-07-23 | 大日本スクリーン製造株式会社 | シリコン自然酸化膜の選択的除去方法 |
| JP2632262B2 (ja) | 1991-08-20 | 1997-07-23 | 大日本スクリーン製造株式会社 | シリコンウエハ上のコンタクトホール内の自然酸化膜の除去方法 |
| JP3329038B2 (ja) | 1993-12-13 | 2002-09-30 | ソニー株式会社 | ドライエッチング方法 |
| JP2004127990A (ja) | 2002-09-30 | 2004-04-22 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
| JP2004296467A (ja) | 2003-03-25 | 2004-10-21 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2005161493A (ja) | 2003-12-04 | 2005-06-23 | Toyota Central Res & Dev Lab Inc | マイクロ構造体の製造方法とその製造装置 |
| US7078814B2 (en) | 2004-05-25 | 2006-07-18 | International Business Machines Corporation | Method of forming a semiconductor device having air gaps and the structure so formed |
| US7365016B2 (en) | 2004-12-27 | 2008-04-29 | Dalsa Semiconductor Inc. | Anhydrous HF release of process for MEMS devices |
| JP5859262B2 (ja) | 2011-09-29 | 2016-02-10 | 東京エレクトロン株式会社 | 堆積物除去方法 |
| JP5486632B2 (ja) | 2012-04-12 | 2014-05-07 | 日本電信電話株式会社 | 電極形成方法 |
| JP2016025195A (ja) | 2014-07-18 | 2016-02-08 | 東京エレクトロン株式会社 | エッチング方法 |
| US9431268B2 (en) | 2015-01-05 | 2016-08-30 | Lam Research Corporation | Isotropic atomic layer etch for silicon and germanium oxides |
| JP6327295B2 (ja) | 2015-08-12 | 2018-05-23 | セントラル硝子株式会社 | ドライエッチング方法 |
| KR101874822B1 (ko) | 2016-04-01 | 2018-07-06 | 주식회사 테스 | 실리콘산화막의 선택적 식각 방법 |
| WO2017176027A1 (ko) | 2016-04-05 | 2017-10-12 | 주식회사 테스 | 실리콘산화막의 선택적 식각 방법 |
| US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
| JP7109165B2 (ja) | 2017-05-30 | 2022-07-29 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6796559B2 (ja) | 2017-07-06 | 2020-12-09 | 東京エレクトロン株式会社 | エッチング方法および残渣除去方法 |
| JP6994381B2 (ja) | 2017-12-22 | 2022-01-14 | 株式会社Ｓｃｒｅｅｎホールディングス | エッチング方法 |
| US11715641B2 (en) * | 2018-09-13 | 2023-08-01 | Central Glass Company, Limited | Method and device for etching silicon oxide |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| WO2021205632A1 (ja) | 2020-04-10 | 2021-10-14 | 株式会社日立ハイテク | エッチング方法 |
| US11295960B1 (en) | 2021-03-09 | 2022-04-05 | Hitachi High-Tech Corporation | Etching method |
-
2022
- 2022-02-14 CN CN202280005768.0A patent/CN116918042A/zh active Pending
- 2022-02-14 US US18/026,095 patent/US12444613B2/en active Active
- 2022-02-14 KR KR1020237005653A patent/KR102864347B1/ko active Active
- 2022-02-14 JP JP2023500427A patent/JP7474903B2/ja active Active
- 2022-02-14 WO PCT/JP2022/005550 patent/WO2023152941A1/ja not_active Ceased
-
2023
- 2023-02-10 TW TW112104755A patent/TWI877570B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019212872A (ja) * | 2018-06-08 | 2019-12-12 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| JP2021089973A (ja) * | 2019-12-04 | 2021-06-10 | 株式会社Ｓｃｒｅｅｎホールディングス | エッチング方法 |
| WO2021182311A1 (ja) * | 2020-03-13 | 2021-09-16 | セントラル硝子株式会社 | ドライエッチング方法、半導体デバイスの製造方法及びドライエッチングガス組成物 |
| JP2021180281A (ja) * | 2020-05-15 | 2021-11-18 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023152941A1 (ja) | 2023-08-17 |
| JP7474903B2 (ja) | 2024-04-25 |
| TW202333229A (zh) | 2023-08-16 |
| TWI877570B (zh) | 2025-03-21 |
| US12444613B2 (en) | 2025-10-14 |
| KR102864347B1 (ko) | 2025-09-24 |
| CN116918042A (zh) | 2023-10-20 |
| KR20230123009A (ko) | 2023-08-22 |
| US20240312789A1 (en) | 2024-09-19 |
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