JP7474903B2 - エッチング処理方法 - Google Patents

エッチング処理方法 Download PDF

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Publication number
JP7474903B2
JP7474903B2 JP2023500427A JP2023500427A JP7474903B2 JP 7474903 B2 JP7474903 B2 JP 7474903B2 JP 2023500427 A JP2023500427 A JP 2023500427A JP 2023500427 A JP2023500427 A JP 2023500427A JP 7474903 B2 JP7474903 B2 JP 7474903B2
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Japan
Prior art keywords
etching
wafer
gas
silicon oxide
oxide film
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JP2023500427A
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English (en)
Japanese (ja)
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JPWO2023152941A1 (https=
JPWO2023152941A5 (https=
Inventor
孝司 服部
将貴 山田
啓佑 秋永
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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Publication of JPWO2023152941A5 publication Critical patent/JPWO2023152941A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3344—Problems associated with etching isotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2023500427A 2022-02-14 2022-02-14 エッチング処理方法 Active JP7474903B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/005550 WO2023152941A1 (ja) 2022-02-14 2022-02-14 エッチング処理方法

Publications (3)

Publication Number Publication Date
JPWO2023152941A1 JPWO2023152941A1 (https=) 2023-08-17
JPWO2023152941A5 JPWO2023152941A5 (https=) 2024-01-17
JP7474903B2 true JP7474903B2 (ja) 2024-04-25

Family

ID=87563974

Family Applications (1)

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JP2023500427A Active JP7474903B2 (ja) 2022-02-14 2022-02-14 エッチング処理方法

Country Status (6)

Country Link
US (1) US12444613B2 (https=)
JP (1) JP7474903B2 (https=)
KR (1) KR102864347B1 (https=)
CN (1) CN116918042A (https=)
TW (1) TWI877570B (https=)
WO (1) WO2023152941A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022125685A (ja) * 2021-02-17 2022-08-29 株式会社Kelk 半導体ウエハの温度制御装置及び半導体ウエハの温度制御方法
CN117241483B (zh) * 2023-10-25 2024-04-12 广东达源设备科技有限公司 用于电路板生产的喷淋装置和方法
TWI903628B (zh) * 2024-07-08 2025-11-01 矽品精密工業股份有限公司 熱處理設備及方法
CN120529700B (zh) * 2025-07-21 2025-11-07 晶科能源(海宁)有限公司 光伏电池及其制造方法、叠层电池、光伏组件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019212872A (ja) 2018-06-08 2019-12-12 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP2021089973A (ja) 2019-12-04 2021-06-10 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法
WO2021182311A1 (ja) 2020-03-13 2021-09-16 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びドライエッチングガス組成物
JP2021180281A (ja) 2020-05-15 2021-11-18 東京エレクトロン株式会社 エッチング方法およびエッチング装置

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US5022961B1 (en) 1989-07-26 1997-05-27 Dainippon Screen Mfg Method for removing a film on a silicon layer surface
JP2632293B2 (ja) 1989-07-26 1997-07-23 大日本スクリーン製造株式会社 シリコン自然酸化膜の選択的除去方法
JP2632262B2 (ja) 1991-08-20 1997-07-23 大日本スクリーン製造株式会社 シリコンウエハ上のコンタクトホール内の自然酸化膜の除去方法
JP3329038B2 (ja) 1993-12-13 2002-09-30 ソニー株式会社 ドライエッチング方法
JP2004127990A (ja) 2002-09-30 2004-04-22 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2004296467A (ja) 2003-03-25 2004-10-21 Hitachi Kokusai Electric Inc 基板処理装置
JP2005161493A (ja) 2003-12-04 2005-06-23 Toyota Central Res & Dev Lab Inc マイクロ構造体の製造方法とその製造装置
US7078814B2 (en) 2004-05-25 2006-07-18 International Business Machines Corporation Method of forming a semiconductor device having air gaps and the structure so formed
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
JP5859262B2 (ja) 2011-09-29 2016-02-10 東京エレクトロン株式会社 堆積物除去方法
JP5486632B2 (ja) 2012-04-12 2014-05-07 日本電信電話株式会社 電極形成方法
JP2016025195A (ja) 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
JP6327295B2 (ja) 2015-08-12 2018-05-23 セントラル硝子株式会社 ドライエッチング方法
KR101874822B1 (ko) 2016-04-01 2018-07-06 주식회사 테스 실리콘산화막의 선택적 식각 방법
WO2017176027A1 (ko) 2016-04-05 2017-10-12 주식회사 테스 실리콘산화막의 선택적 식각 방법
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
JP7109165B2 (ja) 2017-05-30 2022-07-29 東京エレクトロン株式会社 エッチング方法
JP6796559B2 (ja) 2017-07-06 2020-12-09 東京エレクトロン株式会社 エッチング方法および残渣除去方法
JP6994381B2 (ja) 2017-12-22 2022-01-14 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法
US11715641B2 (en) * 2018-09-13 2023-08-01 Central Glass Company, Limited Method and device for etching silicon oxide
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
WO2021205632A1 (ja) 2020-04-10 2021-10-14 株式会社日立ハイテク エッチング方法
US11295960B1 (en) 2021-03-09 2022-04-05 Hitachi High-Tech Corporation Etching method

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Publication number Priority date Publication date Assignee Title
JP2019212872A (ja) 2018-06-08 2019-12-12 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP2021089973A (ja) 2019-12-04 2021-06-10 株式会社Ｓｃｒｅｅｎホールディングス エッチング方法
WO2021182311A1 (ja) 2020-03-13 2021-09-16 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びドライエッチングガス組成物
JP2021180281A (ja) 2020-05-15 2021-11-18 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Also Published As

Publication number Publication date
WO2023152941A1 (ja) 2023-08-17
JPWO2023152941A1 (https=) 2023-08-17
TW202333229A (zh) 2023-08-16
TWI877570B (zh) 2025-03-21
US12444613B2 (en) 2025-10-14
KR102864347B1 (ko) 2025-09-24
CN116918042A (zh) 2023-10-20
KR20230123009A (ko) 2023-08-22
US20240312789A1 (en) 2024-09-19

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