CN116897615A - 氮化物材料和由其构成的压电体以及使用该压电体的mems器件、晶体管、逆变器、换能器、saw器件和铁电存储器 - Google Patents

氮化物材料和由其构成的压电体以及使用该压电体的mems器件、晶体管、逆变器、换能器、saw器件和铁电存储器 Download PDF

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Publication number
CN116897615A
CN116897615A CN202180094141.2A CN202180094141A CN116897615A CN 116897615 A CN116897615 A CN 116897615A CN 202180094141 A CN202180094141 A CN 202180094141A CN 116897615 A CN116897615 A CN 116897615A
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nitride
thin film
piezoelectric thin
nitride material
piezoelectric
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Chinese (zh)
Inventor
安格拉尼·斯里·阿优
秋山守人
上原雅人
山田浩志
平田研二
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National Institute of Advanced Industrial Science and Technology AIST
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National Institute of Advanced Industrial Science and Technology AIST
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
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    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • H10B—ELECTRONIC MEMORY DEVICES
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    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
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    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles

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  • Chemical & Material Sciences (AREA)
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  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CN202180094141.2A 2021-02-24 2021-11-24 氮化物材料和由其构成的压电体以及使用该压电体的mems器件、晶体管、逆变器、换能器、saw器件和铁电存储器 Pending CN116897615A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021027147A JP7572048B2 (ja) 2021-02-24 2021-02-24 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ
JP2021-027147 2021-02-24
PCT/JP2021/042898 WO2022180961A1 (ja) 2021-02-24 2021-11-24 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ

Publications (1)

Publication Number Publication Date
CN116897615A true CN116897615A (zh) 2023-10-17

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Application Number Title Priority Date Filing Date
CN202180094141.2A Pending CN116897615A (zh) 2021-02-24 2021-11-24 氮化物材料和由其构成的压电体以及使用该压电体的mems器件、晶体管、逆变器、换能器、saw器件和铁电存储器

Country Status (6)

Country Link
US (1) US20240101423A1 (https=)
EP (1) EP4273945A4 (https=)
JP (1) JP7572048B2 (https=)
KR (1) KR102803105B1 (https=)
CN (1) CN116897615A (https=)
WO (1) WO2022180961A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022213055A1 (de) * 2022-12-05 2024-06-06 Robert Bosch Gesellschaft mit beschränkter Haftung Piezoelektrische Wandlervorrichtung
CN116056553B (zh) * 2023-01-19 2025-10-28 河北大学 基于氮化铝钪的铁电忆阻器、其制备方法及应用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5190841B2 (ja) 2007-05-31 2013-04-24 独立行政法人産業技術総合研究所 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー
JP2009228131A (ja) * 2008-02-27 2009-10-08 Sumitomo Electric Ind Ltd 窒化アルミニウム薄膜およびその製造方法
JP5817673B2 (ja) * 2011-11-18 2015-11-18 株式会社村田製作所 圧電薄膜共振子及び圧電薄膜の製造方法
JP5843198B2 (ja) * 2012-01-23 2016-01-13 国立研究開発法人産業技術総合研究所 圧電素子およびその製造方法、ならびに圧電センサ
JP5966199B2 (ja) * 2013-05-31 2016-08-10 株式会社デンソー 圧電体薄膜及びその製造方法
JP6123019B2 (ja) * 2014-03-03 2017-04-26 株式会社村田製作所 窒化アルミニウム圧電薄膜、圧電材、圧電部品及び窒化アルミニウム圧電薄膜の製造方法
JP6565118B2 (ja) * 2015-08-24 2019-08-28 株式会社村田製作所 窒化アルミニウム圧電薄膜及びその製造方法、並びに圧電材及び圧電部品及び窒化アルミニウム圧電薄膜の製造方法
GB2578979B (en) * 2017-07-07 2023-01-18 Skyworks Solutions Inc Substituted aluminium nitride for improved acoustic wave filters
US11557716B2 (en) * 2018-02-20 2023-01-17 Akoustis, Inc. Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction
JP7151096B2 (ja) * 2018-02-21 2022-10-12 株式会社デンソー 圧電膜、その製造方法、圧電膜積層体、その製造方法

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KR20230111235A (ko) 2023-07-25
US20240101423A1 (en) 2024-03-28
JP7572048B2 (ja) 2024-10-23
EP4273945A4 (en) 2025-04-30
JP2022128755A (ja) 2022-09-05
WO2022180961A1 (ja) 2022-09-01
KR20230111235A9 (ko) 2024-03-25
KR102803105B1 (ko) 2025-05-07
EP4273945A1 (en) 2023-11-08

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