WO2022180961A1 - 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ - Google Patents

窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ Download PDF

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WO2022180961A1
WO2022180961A1 PCT/JP2021/042898 JP2021042898W WO2022180961A1 WO 2022180961 A1 WO2022180961 A1 WO 2022180961A1 JP 2021042898 W JP2021042898 W JP 2021042898W WO 2022180961 A1 WO2022180961 A1 WO 2022180961A1
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nitride
thin film
piezoelectric thin
nitride material
piezoelectric
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French (fr)
Japanese (ja)
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スリ アユ アンガライニ
守人 秋山
雅人 上原
浩志 山田
研二 平田
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National Institute of Advanced Industrial Science and Technology AIST
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National Institute of Advanced Industrial Science and Technology AIST
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Priority to US18/264,362 priority Critical patent/US20240101423A1/en
Priority to CN202180094141.2A priority patent/CN116897615A/zh
Priority to KR1020237021492A priority patent/KR102803105B1/ko
Priority to EP21928055.9A priority patent/EP4273945A4/en
Publication of WO2022180961A1 publication Critical patent/WO2022180961A1/ja
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Definitions

  • the present invention provides a nitride material to which scandium and at least one of carbon, silicon, germanium, and tin are added, a piezoelectric body made of the nitride material, and a MEMS device, transistor, inverter, transducer, and SAW using the piezoelectric body. It relates to devices and ferroelectric memories.
  • Aluminum nitride is used in high-frequency filters for mobile phones and the like because of its good acoustic wave propagation velocity, Q value (Quality factor), and frequency temperature characteristics.
  • the frequency band allocated for 5G in each country is several GHz. Therefore, by thinning the film thickness of the AlN piezoelectric thin film that constitutes the high frequency filter, the high frequency filter can vibrate in this frequency band.
  • this approach has already reached its limits.
  • Patent Document 1 An aluminum nitride piezoelectric thin film to which germanium (Ge) is added at a predetermined concentration has been proposed as a nitride material with reversed polarity (see Patent Document 1).
  • the aluminum nitride to which germanium is added has the problem that it does not have high piezoelectricity.
  • germanium-doped aluminum nitride is used to construct the above-mentioned two-layered nitride piezoelectric material, it is not possible to ensure a wide passband width, and it also exhibits high performance in terms of insertion loss and guaranteed attenuation.
  • a first aspect of the present invention for solving the above problems is a nitride material represented by the chemical formula ScXMYAl1 -X-YN , wherein M is C, Si, Ge and Sn.
  • the first aspect it is possible to provide a nitride material having piezoelectricity in which the polarization direction is nitrogen polarity.
  • a second aspect of the present invention resides in the nitride material according to the first aspect, wherein M is any one element of C, Si, Ge and Sn.
  • the nitride material according to any one of the first to third aspects is provided on a substrate, and at least one layer is formed between the nitride material and the substrate.
  • a nitride material characterized in that an intermediate layer is provided.
  • the crystallinity (crystallinity) of the nitride material is improved, it is possible to provide a nitride material whose polarization direction is nitrogen polarity and which has higher piezoelectricity.
  • the intermediate layer comprises aluminum nitride, gallium nitride, indium nitride, titanium nitride, scandium nitride, ytterbium nitride, molybdenum, tungsten, hafnium, titanium, ruthenium, ruthenium oxide, chromium, chromium nitride, and platinum. , gold, silver, copper, aluminum, tantalum, iridium, palladium and nickel.
  • the crystallinity (degree of crystallinity) of the nitride material is further improved, so that it is possible to provide a nitride material whose polarization direction is nitrogen polarity and which has higher piezoelectricity.
  • a sixth aspect of the present invention is a piezoelectric body made of the nitride material according to any one of the first to fifth aspects.
  • the sixth aspect it is possible to provide a piezoelectric body having a piezoelectric property in which the polarization direction is nitrogen polarity.
  • a seventh aspect of the present invention is any one of the first to fifth aspects on the surface of the scandium-containing nitride material represented by the chemical formula Sc Z Al 1-Z N (0 ⁇ Z ⁇ 0.4) 1.
  • a piezoelectric body comprising the nitride material according to claim 1.
  • the seventh aspect it is possible to provide a piezoelectric body that can vibrate at a high frequency and has high piezoelectricity.
  • a ninth aspect of the present invention is a MEMS device using the piezoelectric body according to any one of the sixth to eighth aspects.
  • MEMS device is not particularly limited as long as it is a micro-electromechanical system. mentioned.
  • a MEMS device can be provided.
  • a tenth aspect of the present invention resides in a transistor, inverter, transducer, SAW device or ferroelectric memory using the nitride material according to any one of the first to fifth aspects.
  • transducer refers to an element or device that converts a physical quantity carrying a signal into another kind of physical quantity that is convenient for transmission, processing, storage, recording, display, manipulation, and the like.
  • a “SAW device” refers to an electronic device to which a surface acoustic wave (SAW) is applied, such as an IDT-SAW device (Inter Digital Transducer-SAW device).
  • the tenth aspect it is possible to provide a transistor that can be operated at a higher speed than conventional transistors, has a low loss, and has a high output.
  • a transistor with a higher dielectric strength voltage and a lower loss than a conventional inverter it is possible to provide a ferroelectric memory with higher spontaneous polarization and higher storage performance than conventional ferroelectric memories.
  • a high frequency broadband transducer using nitride materials with different polarities it is possible to provide a SAW device that vibrates at a frequency higher than that of a general IDT-SAW device.
  • FIG. 13 is a table showing the composition and piezoelectric constant (d 33 ) of each piezoelectric thin film when Sn is used as the additive substance and the concentration of Sc is fixed at about 20 mol %.
  • FIG. 14 is a table showing the composition and piezoelectric constant (d 33 ) of each piezoelectric thin film when Sn is used as an additive substance and the concentration of Sc is fixed at about 30 mol %.
  • FIG. 15 is a graph showing the relationship between the Sn concentration and d33 in each piezoelectric thin film when Sn is used as the additive substance.
  • FIG. 16 is a graph showing the relationship between the Sn concentration and the Sc concentration at which the piezoelectric polarity is reversed in each piezoelectric thin film when Sn is used as the additive substance.
  • X is preferably greater than 0 and 0.35 or less, Y is greater than 0 and 0.2 or less, and X/Y is preferably 5 or less. is more preferably 0.03 or more.
  • M is only Ge
  • X is preferably greater than 0 and 0.35 or less
  • Y is greater than 0 and 0.2 or less
  • X/Y is preferably 5 or less.
  • /Y is more preferably 4 or less, and more preferably Y is 0.05 or more.
  • M is Sn only, X is preferably greater than 0 and 0.35 or less, Y is greater than 0 and 0.2 or less, and X/Y is preferably 5 or less. is more preferably 0.05 or more.
  • Such a piezoelectric thin film has nitrogen polarity in the polarization direction and has more stable piezoelectricity.
  • the nitride material having the structure described above since the main crystals constituting the nitride material are wurtzite crystals having nitrogen polarity, it is considered that the nitride material as a whole has nitrogen polarity. .
  • a high-frequency filter using these piezoelectric thin films 1 has a lower loss and can operate in a wider band than conventional high-frequency filters. As a result, the portable device can be made more compatible with high frequencies, made smaller, and reduced in power consumption.
  • the configuration of the high-frequency filter is not particularly limited, and can be manufactured with a known configuration, for example.
  • Multi-source simultaneous sputtering deposition system manufactured by Eiko Engineering Co., Ltd.
  • Scandium sputtering target material purity: 99.999%)
  • Silicon sputtering target material purity: 99.999%)
  • Aluminum sputtering target material purity: 99.999%)
  • Substrate heating temperature 200°C
  • a film formation experiment was performed after the pressure in the sputtering chamber was lowered to a high vacuum of 10 ⁇ 5 Pa or less by a vacuum pump.
  • the surface of the target was cleaned immediately after mounting the target and immediately before each film formation experiment.
  • FIG. 5 shows the relationship between the Si concentration and the piezoelectric constant (d 33 ) in each of the piezoelectric thin films shown in FIGS.
  • d33 if the value of d33 is positive (plus), it indicates that the polarization direction of the piezoelectric thin film is the aluminum polarity, and if the value of d33 is negative (minus), the piezoelectric thin film indicates that the polarization direction of is nitrogen polarity.
  • the Sc concentration (X) is greater than 0 and 0.35 (35 mol%) or less
  • the Si concentration (Y) is greater than 0 and 0.2 (20 mol%) or less
  • X/Y is 5 or less
  • the manufacturing method was the same as that for the nitride material using Si as an additive except that the following Ge sputtering target was used instead of the Si sputtering target material.
  • Ge sputtering target material purity: 99.999%)
  • FIG. 7 to 9 show the composition and d33 of each piezoelectric thin film thus obtained.
  • FIG. 7 shows the composition and d33 of each piezoelectric thin film when the Sc concentration is fixed at about 10 mol %
  • FIG. 8 shows the composition and d of each piezoelectric thin film when the Sc concentration is fixed at about 20 mol %.
  • 33 shows the composition and d 33 of each piezoelectric thin film when the concentration of Sc is fixed at about 30 mol %.
  • FIG. 10 shows the relationship between the Ge concentration and d33 in each of the piezoelectric thin films shown in FIGS. Further, in the same manner as in FIG. 6, the concentration of Ge and the concentration of Sc when d33 is 0 are determined from the graph shown in FIG. 10 by interpolation, extrapolation, or the like. Those results are shown in FIG.
  • FIG. 12 shows the composition and d 33 of each piezoelectric thin film when the Sc concentration is fixed at about 10 mol %
  • FIG. 13 shows the composition and d 33 of each piezoelectric thin film when the Sc concentration is fixed at about 20 mol %.
  • 33 shows the composition and d 33 of each piezoelectric thin film when the concentration of Sc is fixed at about 30 mol %.
  • FIG. 15 shows the relationship between the Sn concentration and d33 in each of the piezoelectric thin films shown in FIGS. Further, similar to FIG. 6, the concentration of Sn and the concentration of Sc when d33 is 0 are obtained from the graph shown in FIG. 15 by interpolation, extrapolation, or the like. Those results are shown in FIG.
  • the Sc concentration (X) is greater than 0 and 0.35 (35 mol%) or less, and the Sn concentration (Y) is greater than 0 and 0.2 (20 mol%) or less.
  • the piezoelectric body is constructed using only the nitride material according to the present invention, but the present invention is not limited to this.
  • a scandium-containing nitride material having aluminum polarity Sc Z Al 1-Z N (0 ⁇ Z ⁇ 0.4)
  • the second layer 20 to form a piezoelectric thin film (piezoelectric body) 100 composed of these two layers.
  • the second layer 20 may be formed below the first layer 1 .
  • the thickness of the first layer 1 and the thickness of the second layer 20 may be the same or different.
  • Such a piezoelectric thin film having a two-layer structure may be a piezoelectric thin film composed only of the piezoelectric thin film of Embodiment 1 or Sc Z Al 1-Z N (0 ⁇ Z ⁇ 0.4), it can vibrate at a higher frequency than a piezoelectric thin film. Needless to say, in order to vibrate the piezoelectric thin film, for example, it is necessary to attach an upper electrode to the upper surface of the piezoelectric thin film and a lower electrode to the lower surface of the piezoelectric thin film, and apply a voltage to these electrodes. (Embodiment 3)
  • the present invention is not limited to this.
  • two layers (third layer 30 and fourth layer 40) of similarly configured thin films are further formed on the thin film having the same configuration as that of the second embodiment to obtain a four-layer piezoelectric structure.
  • a thin film (piezoelectric body) 100A may be configured.
  • the first layer 1 is a nitride material with a polarization direction of nitrogen polarity
  • the second layer 20 is a scandium-containing nitride material with a polarization direction of aluminum polarity
  • the third layer 30 is a nitride material with a polarization direction of nitrogen polarity
  • the third layer 30 is a nitride material with a polarization direction of nitrogen polarity.
  • the four layers 40 may constitute a piezoelectric thin film 100A having a four-layer structure made of a scandium-containing nitride material whose polarization direction is aluminum polarity.
  • the stacking order is not particularly limited as long as the polarization directions of the nitride materials in contact are different.
  • the piezoelectric thin film 100A having such a four-layer structure is the same, the piezoelectric thin film, Sc Z Al 1-Z N (0 ⁇ Z ⁇ 0.4) or the piezoelectric thin film of the second embodiment, the frequency band that can be vibrated can be expanded to a wider range.
  • the material and thickness of the intermediate layer are not particularly limited as long as a piezoelectric thin film can be formed on the intermediate layer.
  • intermediate layers include aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), titanium nitride (TiN), scandium nitride (ScN), ytterbium nitride (YbN), molybdenum (Mo), tungsten ( W), hafnium (Hf), titanium (Ti), ruthenium (Ru), ruthenium oxide ( RuO2 ), chromium (Cr), chromium nitride (CrN), platinum (Pt), gold (Au), silver (Ag) , copper (Cu), aluminum (Al), tantalum (Ta), iridium (Ir), palladium (Pd), nickel (Ni), etc., and have a thickness of 50 to 200 nm.
  • the crystallinity (degree of crystallinity) of the piezoelectric thin film is improved.
  • a piezoelectric thin film can be manufactured.
  • a piezoelectric thin film may be formed by laminating a large number of layers made of a nitride material having a polarization direction different from that of the nitride material that is in contact therewith.
  • Such a piezoelectric thin film can vibrate at a higher frequency than the piezoelectric thin film of the third embodiment, and can expand the frequency band of the vibrator to a wider range.
  • the nitride material (piezoelectric material) according to the present invention described above can be used for MEMS.
  • MEMS using a nitride material according to the present invention can vibrate at a high frequency, and by using a piezoelectric body with high piezoelectricity, portable equipment can be made more compatible with high frequencies, miniaturized, and power-saving. It is possible to provide a MEMS device that can contribute to For example, a known MEMS structure can be used.
  • the piezoelectric thin film using the nitride material according to the present invention has been described as an example, but the present invention is not limited to this.
  • nitride materials according to the present invention can also be applied in MEMS devices, transistors, inverters, transducers, SAW devices or ferroelectric memories.
  • a transistor using a nitride material according to the present invention can operate at a higher speed, has a lower loss, and has a higher output than a conventional transistor.
  • the inverter using the nitride material according to the present invention has a higher withstand voltage and a lower loss than conventional inverters.
  • the ferroelectric memory using the nitride material according to the present invention has higher spontaneous polarization and higher storage performance than conventional ferroelectric memories. Furthermore, it is possible to provide a high frequency broadband transducer using nitride materials with different polarities. Also, by configuring the IDT using piezoelectric bodies made of nitride materials with different polarities, it is possible to provide a SAW device that vibrates at a frequency higher than that of a general IDT-SAW device. For the configuration of such transistors, inverters, transducers, SAW devices, and ferroelectric memories, for example, known configurations can be used.

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PCT/JP2021/042898 2021-02-24 2021-11-24 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ Ceased WO2022180961A1 (ja)

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US18/264,362 US20240101423A1 (en) 2021-02-24 2021-11-24 Nitride material, piezoelectric body formed of same, and mems device, transistor, inverter, transducer, saw device, and ferroelectric memory using the piezoelectric body
CN202180094141.2A CN116897615A (zh) 2021-02-24 2021-11-24 氮化物材料和由其构成的压电体以及使用该压电体的mems器件、晶体管、逆变器、换能器、saw器件和铁电存储器
KR1020237021492A KR102803105B1 (ko) 2021-02-24 2021-11-24 질화물 재료 및 그것으로 이루어지는 압전체 및 그 압전체를 이용한 mems 디바이스, 트랜지스터, 인버터, 트랜스듀서, saw 디바이스 및 강유전체 메모리
EP21928055.9A EP4273945A4 (en) 2021-02-24 2021-11-24 NITRIDE MATERIAL, PIEZOELECTRIC BODY MADE THEREOF, AND MEMS DEVICE, TRANSISTOR, INVERTER, TRANSDUCER, SAW DEVICE, AND FERROELECTRIC MEMORY EACH USING SAID PIEZOELECTRIC BODY

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JP2021027147A JP7572048B2 (ja) 2021-02-24 2021-02-24 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ
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EP4273945A4 (en) 2025-04-30
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