JP7572048B2 - 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ - Google Patents

窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ Download PDF

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JP7572048B2
JP7572048B2 JP2021027147A JP2021027147A JP7572048B2 JP 7572048 B2 JP7572048 B2 JP 7572048B2 JP 2021027147 A JP2021027147 A JP 2021027147A JP 2021027147 A JP2021027147 A JP 2021027147A JP 7572048 B2 JP7572048 B2 JP 7572048B2
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nitride
nitride material
thin film
piezoelectric thin
piezoelectric
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JP2022128755A (ja
JP2022128755A5 (https=
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スリ アユ アンガライニ
守人 秋山
雅人 上原
浩志 山田
研二 平田
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National Institute of Advanced Industrial Science and Technology AIST
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National Institute of Advanced Industrial Science and Technology AIST
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Priority to KR1020237021492A priority patent/KR102803105B1/ko
Priority to US18/264,362 priority patent/US20240101423A1/en
Priority to PCT/JP2021/042898 priority patent/WO2022180961A1/ja
Priority to CN202180094141.2A priority patent/CN116897615A/zh
Priority to EP21928055.9A priority patent/EP4273945A4/en
Publication of JP2022128755A publication Critical patent/JP2022128755A/ja
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
    • C—CHEMISTRY; METALLURGY
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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    • H03—ELECTRONIC CIRCUITRY
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    • H03—ELECTRONIC CIRCUITRY
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  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2021027147A 2021-02-24 2021-02-24 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ Active JP7572048B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2021027147A JP7572048B2 (ja) 2021-02-24 2021-02-24 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ
US18/264,362 US20240101423A1 (en) 2021-02-24 2021-11-24 Nitride material, piezoelectric body formed of same, and mems device, transistor, inverter, transducer, saw device, and ferroelectric memory using the piezoelectric body
PCT/JP2021/042898 WO2022180961A1 (ja) 2021-02-24 2021-11-24 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ
CN202180094141.2A CN116897615A (zh) 2021-02-24 2021-11-24 氮化物材料和由其构成的压电体以及使用该压电体的mems器件、晶体管、逆变器、换能器、saw器件和铁电存储器
KR1020237021492A KR102803105B1 (ko) 2021-02-24 2021-11-24 질화물 재료 및 그것으로 이루어지는 압전체 및 그 압전체를 이용한 mems 디바이스, 트랜지스터, 인버터, 트랜스듀서, saw 디바이스 및 강유전체 메모리
EP21928055.9A EP4273945A4 (en) 2021-02-24 2021-11-24 NITRIDE MATERIAL, PIEZOELECTRIC BODY MADE THEREOF, AND MEMS DEVICE, TRANSISTOR, INVERTER, TRANSDUCER, SAW DEVICE, AND FERROELECTRIC MEMORY EACH USING SAID PIEZOELECTRIC BODY

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JP2021027147A JP7572048B2 (ja) 2021-02-24 2021-02-24 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ

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JP2022128755A JP2022128755A (ja) 2022-09-05
JP2022128755A5 JP2022128755A5 (https=) 2023-05-29
JP7572048B2 true JP7572048B2 (ja) 2024-10-23

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US (1) US20240101423A1 (https=)
EP (1) EP4273945A4 (https=)
JP (1) JP7572048B2 (https=)
KR (1) KR102803105B1 (https=)
CN (1) CN116897615A (https=)
WO (1) WO2022180961A1 (https=)

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DE102022213055A1 (de) * 2022-12-05 2024-06-06 Robert Bosch Gesellschaft mit beschränkter Haftung Piezoelektrische Wandlervorrichtung
CN116056553B (zh) * 2023-01-19 2025-10-28 河北大学 基于氮化铝钪的铁电忆阻器、其制备方法及应用

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JP2013148562A (ja) 2012-01-23 2013-08-01 National Institute Of Advanced Industrial & Technology 圧電素子およびその製造方法、ならびに圧電センサ
JP2014236051A (ja) 2013-05-31 2014-12-15 株式会社デンソー 圧電体薄膜及びその製造方法
US20190259934A1 (en) 2018-02-20 2019-08-22 Akoustis, Inc. Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction
JP2019145677A (ja) 2018-02-21 2019-08-29 株式会社デンソー 圧電膜、その製造方法、圧電膜積層体、その製造方法
JP2020526471A (ja) 2017-07-07 2020-08-31 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. 弾性波フィルタ改善のための置換窒化アルミニウム

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JP6565118B2 (ja) * 2015-08-24 2019-08-28 株式会社村田製作所 窒化アルミニウム圧電薄膜及びその製造方法、並びに圧電材及び圧電部品及び窒化アルミニウム圧電薄膜の製造方法

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