KR102803105B1 - 질화물 재료 및 그것으로 이루어지는 압전체 및 그 압전체를 이용한 mems 디바이스, 트랜지스터, 인버터, 트랜스듀서, saw 디바이스 및 강유전체 메모리 - Google Patents

질화물 재료 및 그것으로 이루어지는 압전체 및 그 압전체를 이용한 mems 디바이스, 트랜지스터, 인버터, 트랜스듀서, saw 디바이스 및 강유전체 메모리 Download PDF

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KR102803105B1
KR102803105B1 KR1020237021492A KR20237021492A KR102803105B1 KR 102803105 B1 KR102803105 B1 KR 102803105B1 KR 1020237021492 A KR1020237021492 A KR 1020237021492A KR 20237021492 A KR20237021492 A KR 20237021492A KR 102803105 B1 KR102803105 B1 KR 102803105B1
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nitride
piezoelectric
thin film
nitride material
piezoelectric thin
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KR20230111235A (ko
KR20230111235A9 (ko
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스리 아유 안가라이니
모리토 아키야마
마사토 우에하라
히로시 야마다
켄지 히라타
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고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼
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    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
    • C—CHEMISTRY; METALLURGY
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    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
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    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/0641—Nitrides
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    • C23C14/58—After-treatment
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    • H10B—ELECTRONIC MEMORY DEVICES
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  • Chemical & Material Sciences (AREA)
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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
KR1020237021492A 2021-02-24 2021-11-24 질화물 재료 및 그것으로 이루어지는 압전체 및 그 압전체를 이용한 mems 디바이스, 트랜지스터, 인버터, 트랜스듀서, saw 디바이스 및 강유전체 메모리 Active KR102803105B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-027147 2021-02-24
JP2021027147A JP7572048B2 (ja) 2021-02-24 2021-02-24 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ
PCT/JP2021/042898 WO2022180961A1 (ja) 2021-02-24 2021-11-24 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス、トランジスタ、インバーター、トランスデューサー、ｓａｗデバイスおよび強誘電体メモリ

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KR20230111235A KR20230111235A (ko) 2023-07-25
KR20230111235A9 KR20230111235A9 (ko) 2024-03-25
KR102803105B1 true KR102803105B1 (ko) 2025-05-07

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US (1) US20240101423A1 (https=)
EP (1) EP4273945A4 (https=)
JP (1) JP7572048B2 (https=)
KR (1) KR102803105B1 (https=)
CN (1) CN116897615A (https=)
WO (1) WO2022180961A1 (https=)

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DE102022213055A1 (de) * 2022-12-05 2024-06-06 Robert Bosch Gesellschaft mit beschränkter Haftung Piezoelektrische Wandlervorrichtung
CN116056553B (zh) * 2023-01-19 2025-10-28 河北大学 基于氮化铝钪的铁电忆阻器、其制备方法及应用

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JP2013128267A (ja) * 2011-11-18 2013-06-27 Murata Mfg Co Ltd 圧電薄膜共振子及び圧電薄膜の製造方法
JP2013148562A (ja) * 2012-01-23 2013-08-01 National Institute Of Advanced Industrial & Technology 圧電素子およびその製造方法、ならびに圧電センサ
JP2014236051A (ja) * 2013-05-31 2014-12-15 株式会社デンソー 圧電体薄膜及びその製造方法
JP2017045749A (ja) 2015-08-24 2017-03-02 株式会社村田製作所 窒化アルミニウム圧電薄膜及びその製造方法、並びに圧電材及び圧電部品及び窒化アルミニウム圧電薄膜の製造方法

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JP5190841B2 (ja) 2007-05-31 2013-04-24 独立行政法人産業技術総合研究所 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー
JP2009228131A (ja) * 2008-02-27 2009-10-08 Sumitomo Electric Ind Ltd 窒化アルミニウム薄膜およびその製造方法
JP6123019B2 (ja) * 2014-03-03 2017-04-26 株式会社村田製作所 窒化アルミニウム圧電薄膜、圧電材、圧電部品及び窒化アルミニウム圧電薄膜の製造方法
GB2578979B (en) * 2017-07-07 2023-01-18 Skyworks Solutions Inc Substituted aluminium nitride for improved acoustic wave filters
US11557716B2 (en) * 2018-02-20 2023-01-17 Akoustis, Inc. Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction
JP7151096B2 (ja) * 2018-02-21 2022-10-12 株式会社デンソー 圧電膜、その製造方法、圧電膜積層体、その製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013128267A (ja) * 2011-11-18 2013-06-27 Murata Mfg Co Ltd 圧電薄膜共振子及び圧電薄膜の製造方法
JP2013148562A (ja) * 2012-01-23 2013-08-01 National Institute Of Advanced Industrial & Technology 圧電素子およびその製造方法、ならびに圧電センサ
JP2014236051A (ja) * 2013-05-31 2014-12-15 株式会社デンソー 圧電体薄膜及びその製造方法
JP2017045749A (ja) 2015-08-24 2017-03-02 株式会社村田製作所 窒化アルミニウム圧電薄膜及びその製造方法、並びに圧電材及び圧電部品及び窒化アルミニウム圧電薄膜の製造方法

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KR20230111235A (ko) 2023-07-25
US20240101423A1 (en) 2024-03-28
JP7572048B2 (ja) 2024-10-23
CN116897615A (zh) 2023-10-17
EP4273945A4 (en) 2025-04-30
JP2022128755A (ja) 2022-09-05
WO2022180961A1 (ja) 2022-09-01
KR20230111235A9 (ko) 2024-03-25
EP4273945A1 (en) 2023-11-08

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