JP7329828B2 - 窒化物圧電体およびそれを用いたmemsデバイス - Google Patents
窒化物圧電体およびそれを用いたmemsデバイス Download PDFInfo
- Publication number
- JP7329828B2 JP7329828B2 JP2019159305A JP2019159305A JP7329828B2 JP 7329828 B2 JP7329828 B2 JP 7329828B2 JP 2019159305 A JP2019159305 A JP 2019159305A JP 2019159305 A JP2019159305 A JP 2019159305A JP 7329828 B2 JP7329828 B2 JP 7329828B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric
- less
- nitride
- piezoelectric body
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims description 22
- 150000004767 nitrides Chemical class 0.000 title description 11
- 229910052715 tantalum Inorganic materials 0.000 claims description 20
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 3
- CUOITRGULIVMPC-UHFFFAOYSA-N azanylidynescandium Chemical compound [Sc]#N CUOITRGULIVMPC-UHFFFAOYSA-N 0.000 claims description 3
- XLWMYKCPNRBIDK-UHFFFAOYSA-N azanylidyneytterbium Chemical compound [Yb]#N XLWMYKCPNRBIDK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 50
- 239000011777 magnesium Substances 0.000 description 44
- 239000002019 doping agent Substances 0.000 description 18
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 13
- 229910052749 magnesium Inorganic materials 0.000 description 13
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002056 X-ray absorption spectroscopy Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241001124569 Lycaenidae Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
Description
(実施形態1)
(実施例)
多元同時スパッタ成膜装置(エイコーエンジニアリング社製)
タンタルのスパッタリングターゲット材(濃度:99.999%)
マグネシウムのスパッタリングターゲット材(濃度:99.999%)
アルミニウムのスパッタリングターゲット材(濃度:99.999%)
ガス:窒素(純度:99.99995%以上)とアルゴンガス(純度:99.9999%以上)の混合ガス(混合比 50:50)
基板加熱温度:500℃
なお、電気機械結合係数K2は、比誘電率等を用いて算出することができる。
(実施形態2)
(実施形態3)
10 基板
20 中間層
Claims (9)
- 化学式Al1-X-YMgXTaYNで表される圧電体であって、
X+Yが1より小さく、かつXは0より大きく1より小さく、Yは0より大きく1より小さい範囲にあり、
Taは4価のものを含み、
前記4価のTaが、4価以外のTaと比較して最も多く含まれていることを特徴とする圧電体。 - 化学式Al 1-X-Y Mg X Ta Y Nで表される圧電体であって、
X+Yが1より小さく、かつXは0より大きく1より小さく、Yは0より大きく1より小さい範囲にあり、
Taは4価のものを含み、
X/Yが、2よりも大きく、5以下であることを特徴とする圧電体。 - 化学式Al 1-X-Y Mg X Ta Y Nで表される圧電体であって、
X+Yが1より小さく、かつXは0より大きく1より小さく、Yは0より大きく1より小さい範囲にあり、
Taは4価のものを含み、
X/Yが、2.5よりも大きく、4以下であることを特徴とする圧電体。 - X+Yが、0.0よりも大きく、0.4以下であることを特徴とする請求項1~3の何れか1項に記載の圧電体。
- X+Yが、0.15以上で0.35以下であることを特徴とする請求項1~3の何れか1項に記載の圧電体。
- 請求項1~5の何れか1項に記載の圧電体が基板上に設けられており、前記圧電体と前記基板との間に、少なくとも1層の中間層が設けられていることを特徴とする圧電体。
- 前記中間層は、窒化アルミニウム、窒化ガリウム、窒化インジウム、窒化チタン、窒化スカンジウム、窒化イッテルビウム、モリブデン、タングステン、ハフニウム、チタン、ルテニウム、酸化ルテニウム、クロム、窒化クロム、白金、金、銀、銅、アルミニウム、タンタル、イリジウム、パラジウムおよびニッケルの少なくとも1つを含んでいることを特徴とする請求項6に記載の圧電体。
- 前記中間層と前記圧電体との間に、前記中間層を構成する物質と前記圧電体を構成する物質とが含まれる拡散層がさらに設けられていることを特徴とする請求項6または7に記載の圧電体。
- 請求項1~8の何れか1項に記載の圧電体を用いたMEMSデバイス。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019159305A JP7329828B2 (ja) | 2019-09-02 | 2019-09-02 | 窒化物圧電体およびそれを用いたmemsデバイス |
CN202080061646.4A CN114341053A (zh) | 2019-09-02 | 2020-06-04 | 氮化物压电体和使用该氮化物压电体的mems器件 |
KR1020227000062A KR102616106B1 (ko) | 2019-09-02 | 2020-06-04 | 질화물 압전체 및 이를 이용한 mems 디바이스 |
US17/634,224 US20220274886A1 (en) | 2019-09-02 | 2020-06-04 | Nitride piezoelectric body and mems device using same |
EP20860725.9A EP3974376B1 (en) | 2019-09-02 | 2020-06-04 | Nitride piezoelectric body and mems device using same |
PCT/JP2020/022048 WO2021044683A1 (ja) | 2019-09-02 | 2020-06-04 | 窒化物圧電体およびそれを用いたmemsデバイス |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019159305A JP7329828B2 (ja) | 2019-09-02 | 2019-09-02 | 窒化物圧電体およびそれを用いたmemsデバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021039995A JP2021039995A (ja) | 2021-03-11 |
JP7329828B2 true JP7329828B2 (ja) | 2023-08-21 |
Family
ID=74848786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019159305A Active JP7329828B2 (ja) | 2019-09-02 | 2019-09-02 | 窒化物圧電体およびそれを用いたmemsデバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220274886A1 (ja) |
EP (1) | EP3974376B1 (ja) |
JP (1) | JP7329828B2 (ja) |
KR (1) | KR102616106B1 (ja) |
CN (1) | CN114341053A (ja) |
WO (1) | WO2021044683A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11999615B2 (en) | 2019-02-22 | 2024-06-04 | National Institute Of Advanced Industrial Science And Technology | Nitride piezoelectric body and MEMS device using same |
JP2023540590A (ja) | 2021-05-18 | 2023-09-25 | エルジー エナジー ソリューション リミテッド | リチウム二次電池用正極およびそれを含むリチウム二次電池 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009010926A (ja) | 2007-05-31 | 2009-01-15 | National Institute Of Advanced Industrial & Technology | 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー |
JP2013219743A (ja) | 2012-03-15 | 2013-10-24 | Taiyo Yuden Co Ltd | 弾性波デバイス |
JP2014121025A (ja) | 2012-12-18 | 2014-06-30 | Taiyo Yuden Co Ltd | 圧電薄膜共振子 |
WO2016111280A1 (ja) | 2015-01-06 | 2016-07-14 | 株式会社村田製作所 | 圧電薄膜及び圧電振動子 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS594591B2 (ja) | 1979-06-11 | 1984-01-30 | 株式会社ハツコ− | 地下構造物の管体貫通部防水構造 |
-
2019
- 2019-09-02 JP JP2019159305A patent/JP7329828B2/ja active Active
-
2020
- 2020-06-04 WO PCT/JP2020/022048 patent/WO2021044683A1/ja unknown
- 2020-06-04 US US17/634,224 patent/US20220274886A1/en active Pending
- 2020-06-04 EP EP20860725.9A patent/EP3974376B1/en active Active
- 2020-06-04 KR KR1020227000062A patent/KR102616106B1/ko active IP Right Grant
- 2020-06-04 CN CN202080061646.4A patent/CN114341053A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009010926A (ja) | 2007-05-31 | 2009-01-15 | National Institute Of Advanced Industrial & Technology | 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー |
JP2013219743A (ja) | 2012-03-15 | 2013-10-24 | Taiyo Yuden Co Ltd | 弾性波デバイス |
JP2014121025A (ja) | 2012-12-18 | 2014-06-30 | Taiyo Yuden Co Ltd | 圧電薄膜共振子 |
WO2016111280A1 (ja) | 2015-01-06 | 2016-07-14 | 株式会社村田製作所 | 圧電薄膜及び圧電振動子 |
Also Published As
Publication number | Publication date |
---|---|
KR102616106B1 (ko) | 2023-12-21 |
WO2021044683A1 (ja) | 2021-03-11 |
US20220274886A1 (en) | 2022-09-01 |
KR20220016953A (ko) | 2022-02-10 |
EP3974376A1 (en) | 2022-03-30 |
JP2021039995A (ja) | 2021-03-11 |
EP3974376A4 (en) | 2023-08-16 |
CN114341053A (zh) | 2022-04-12 |
EP3974376B1 (en) | 2024-04-17 |
EP3974376C0 (en) | 2024-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5190841B2 (ja) | 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー | |
US20200366265A1 (en) | Bulk acoustic resonator and filter including the same | |
US10637436B2 (en) | Bulk acoustic wave resonator and filter including the same | |
US20180183407A1 (en) | Bulk acoustic wave resonator and filter including the same | |
CN110719082B (zh) | 声波谐振器封装件 | |
JP7329828B2 (ja) | 窒化物圧電体およびそれを用いたmemsデバイス | |
US11418168B2 (en) | Acoustic resonator and method for manufacturing the same | |
CN108574468A (zh) | 薄膜体声波谐振器以及制造薄膜体声波谐振器的方法 | |
JP4730126B2 (ja) | バルク弾性波共振素子及び該製造方法並びにフィルタ回路 | |
CN111585538B (zh) | 体声波谐振器 | |
TWI723606B (zh) | 聲波諧振器及其製造方法 | |
JP2006033748A (ja) | 薄膜バルク音波共振子 | |
CN113165865B (zh) | 压电体以及使用其的mems器件 | |
WO2022180961A1 (ja) | 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたmemsデバイス、トランジスタ、インバーター、トランスデューサー、sawデバイスおよび強誘電体メモリ | |
CN114465597A (zh) | 体声波谐振器 | |
TW202306205A (zh) | 聲波共振器 | |
JP2005210614A (ja) | 薄膜バルク音響共振子の製造方法、圧電膜の形成方法および非反応性スパッタリング装置 | |
CN113497599A (zh) | 体声波谐振器 | |
CN113676151A (zh) | 体声波谐振器及制造体声波谐振器的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230302 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230330 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230724 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230801 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7329828 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |