CN116711321A - 摄像装置及相机系统 - Google Patents

摄像装置及相机系统 Download PDF

Info

Publication number
CN116711321A
CN116711321A CN202180087529.XA CN202180087529A CN116711321A CN 116711321 A CN116711321 A CN 116711321A CN 202180087529 A CN202180087529 A CN 202180087529A CN 116711321 A CN116711321 A CN 116711321A
Authority
CN
China
Prior art keywords
potential
transistor
charge storage
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180087529.XA
Other languages
English (en)
Chinese (zh)
Inventor
村上雅史
荘保信
佐藤好弘
西村佳寿子
平濑顺司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN116711321A publication Critical patent/CN116711321A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202180087529.XA 2021-01-15 2021-10-12 摄像装置及相机系统 Pending CN116711321A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-005352 2021-01-15
JP2021005352 2021-01-15
PCT/JP2021/037712 WO2022153628A1 (ja) 2021-01-15 2021-10-12 撮像装置及びカメラシステム

Publications (1)

Publication Number Publication Date
CN116711321A true CN116711321A (zh) 2023-09-05

Family

ID=82448308

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180087529.XA Pending CN116711321A (zh) 2021-01-15 2021-10-12 摄像装置及相机系统

Country Status (5)

Country Link
US (1) US12407951B2 (https=)
EP (1) EP4280591A4 (https=)
JP (1) JP7720574B2 (https=)
CN (1) CN116711321A (https=)
WO (1) WO2022153628A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116547813A (zh) * 2020-11-13 2023-08-04 松下知识产权经营株式会社 摄像装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08289205A (ja) * 1995-04-13 1996-11-01 Nissan Motor Co Ltd 受光素子およびこれを用いた画像入力装置
US6246436B1 (en) 1997-11-03 2001-06-12 Agilent Technologies, Inc Adjustable gain active pixel sensor
JPH11274524A (ja) * 1998-03-20 1999-10-08 Toshiba Corp Ｘ線撮像装置
US6323490B1 (en) 1998-03-20 2001-11-27 Kabushiki Kaisha Toshiba X-ray semiconductor detector
JP4317115B2 (ja) 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP2008079001A (ja) 2006-09-21 2008-04-03 Matsushita Electric Ind Co Ltd 固体撮像装置
KR100882467B1 (ko) 2007-12-28 2009-02-09 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP4835710B2 (ja) 2009-03-17 2011-12-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
GB201102478D0 (en) * 2011-02-11 2011-03-30 Isdi Ltd Radiation detector and method
JP5028545B2 (ja) 2012-01-16 2012-09-19 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
JP5814818B2 (ja) * 2012-02-21 2015-11-17 株式会社日立製作所 固体撮像装置
EP2966856B1 (en) 2014-07-08 2020-04-15 Sony Depthsensing Solutions N.V. A high dynamic range pixel and a method for operating it
US9967501B2 (en) 2014-10-08 2018-05-08 Panasonic Intellectual Property Management Co., Ltd. Imaging device
JP6213743B2 (ja) * 2014-10-08 2017-10-18 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
JP2017135693A (ja) * 2016-01-21 2017-08-03 パナソニックＩｐマネジメント株式会社 撮像装置
JP6474014B1 (ja) * 2017-07-05 2019-02-27 パナソニックＩｐマネジメント株式会社 撮像装置
CN110099229B (zh) * 2018-01-30 2023-04-28 松下知识产权经营株式会社 摄像装置
EP3910934B1 (en) 2019-01-08 2023-11-29 Panasonic Intellectual Property Management Co., Ltd. Imaging device
JP7478968B2 (ja) * 2019-03-20 2024-05-08 パナソニックＩｐマネジメント株式会社 撮像装置
WO2021131300A1 (ja) * 2019-12-23 2021-07-01 パナソニックＩｐマネジメント株式会社 撮像装置

Also Published As

Publication number Publication date
EP4280591A4 (en) 2024-05-29
JP7720574B2 (ja) 2025-08-08
JPWO2022153628A1 (https=) 2022-07-21
EP4280591A1 (en) 2023-11-22
US20230336886A1 (en) 2023-10-19
US12407951B2 (en) 2025-09-02
WO2022153628A1 (ja) 2022-07-21

Similar Documents

Publication Publication Date Title
US12022215B2 (en) Imaging device
US9894297B2 (en) Imaging device
CN107770461B (zh) 固体摄像装置、固体摄像装置的驱动方法以及电子设备
US10672827B2 (en) Imaging device including unit pixel cell
EP1187217A2 (en) Solid-state image sensing device
WO2016013412A1 (ja) 固体撮像素子、撮像制御方法、信号処理方法、及び、電子機器
JP2018207488A (ja) 撮像装置
CN112640433B (zh) 摄像装置
CN106254797A (zh) 摄像装置
US11658200B2 (en) Imaging device
JP2019022095A (ja) 光電変換装置、撮像装置、光電変換方法
US12407951B2 (en) Imaging device and camera system
CN118433560A (zh) 摄像装置
JP2020114020A (ja) 撮像素子および撮像装置
JP7327916B2 (ja) 光電変換装置および機器
CN116762172A (zh) 摄像装置
US20250338035A1 (en) Photoelectric conversion device and equipment using photoelectric conversion device
WO2024070115A1 (ja) 撮像装置
WO2022255010A1 (ja) 撮像装置
JP2004112438A (ja) 固体撮像装置
CN118661425A (zh) 摄像装置
JP2005323127A (ja) 撮像装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination