JP7720574B2 - 撮像装置及びカメラシステム - Google Patents

撮像装置及びカメラシステム

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Publication number
JP7720574B2
JP7720574B2 JP2022575079A JP2022575079A JP7720574B2 JP 7720574 B2 JP7720574 B2 JP 7720574B2 JP 2022575079 A JP2022575079 A JP 2022575079A JP 2022575079 A JP2022575079 A JP 2022575079A JP 7720574 B2 JP7720574 B2 JP 7720574B2
Authority
JP
Japan
Prior art keywords
potential
transistor
charge storage
imaging device
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022575079A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022153628A1 (https=
JPWO2022153628A5 (https=
Inventor
雅史 村上
信 荘保
好弘 佐藤
佳壽子 西村
順司 平瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of JPWO2022153628A1 publication Critical patent/JPWO2022153628A1/ja
Publication of JPWO2022153628A5 publication Critical patent/JPWO2022153628A5/ja
Application granted granted Critical
Publication of JP7720574B2 publication Critical patent/JP7720574B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2022575079A 2021-01-15 2021-10-12 撮像装置及びカメラシステム Active JP7720574B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021005352 2021-01-15
JP2021005352 2021-01-15
PCT/JP2021/037712 WO2022153628A1 (ja) 2021-01-15 2021-10-12 撮像装置及びカメラシステム

Publications (3)

Publication Number Publication Date
JPWO2022153628A1 JPWO2022153628A1 (https=) 2022-07-21
JPWO2022153628A5 JPWO2022153628A5 (https=) 2023-10-10
JP7720574B2 true JP7720574B2 (ja) 2025-08-08

Family

ID=82448308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022575079A Active JP7720574B2 (ja) 2021-01-15 2021-10-12 撮像装置及びカメラシステム

Country Status (5)

Country Link
US (1) US12407951B2 (https=)
EP (1) EP4280591A4 (https=)
JP (1) JP7720574B2 (https=)
CN (1) CN116711321A (https=)
WO (1) WO2022153628A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116547813A (zh) * 2020-11-13 2023-08-04 松下知识产权经营株式会社 摄像装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219339A (ja) 2009-03-17 2010-09-30 Sony Corp 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
JP2012134987A (ja) 2012-01-16 2012-07-12 Canon Inc 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
US20140070075A1 (en) 2011-02-11 2014-03-13 Sdi Limited Radiation detector and method
US20150194458A1 (en) 2012-02-21 2015-07-09 Hitachi, Ltd. Solid-state image sensing device
JP2016076921A (ja) 2014-10-08 2016-05-12 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
JP2017135693A (ja) 2016-01-21 2017-08-03 パナソニックＩｐマネジメント株式会社 撮像装置

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JPH08289205A (ja) * 1995-04-13 1996-11-01 Nissan Motor Co Ltd 受光素子およびこれを用いた画像入力装置
US6246436B1 (en) 1997-11-03 2001-06-12 Agilent Technologies, Inc Adjustable gain active pixel sensor
JPH11274524A (ja) * 1998-03-20 1999-10-08 Toshiba Corp Ｘ線撮像装置
US6323490B1 (en) 1998-03-20 2001-11-27 Kabushiki Kaisha Toshiba X-ray semiconductor detector
JP4317115B2 (ja) 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP2008079001A (ja) 2006-09-21 2008-04-03 Matsushita Electric Ind Co Ltd 固体撮像装置
KR100882467B1 (ko) 2007-12-28 2009-02-09 주식회사 동부하이텍 이미지센서 및 그 제조방법
EP2966856B1 (en) 2014-07-08 2020-04-15 Sony Depthsensing Solutions N.V. A high dynamic range pixel and a method for operating it
US9967501B2 (en) 2014-10-08 2018-05-08 Panasonic Intellectual Property Management Co., Ltd. Imaging device
JP6474014B1 (ja) * 2017-07-05 2019-02-27 パナソニックＩｐマネジメント株式会社 撮像装置
CN110099229B (zh) * 2018-01-30 2023-04-28 松下知识产权经营株式会社 摄像装置
EP3910934B1 (en) 2019-01-08 2023-11-29 Panasonic Intellectual Property Management Co., Ltd. Imaging device
JP7478968B2 (ja) * 2019-03-20 2024-05-08 パナソニックＩｐマネジメント株式会社 撮像装置
WO2021131300A1 (ja) * 2019-12-23 2021-07-01 パナソニックＩｐマネジメント株式会社 撮像装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219339A (ja) 2009-03-17 2010-09-30 Sony Corp 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
US20140070075A1 (en) 2011-02-11 2014-03-13 Sdi Limited Radiation detector and method
JP2012134987A (ja) 2012-01-16 2012-07-12 Canon Inc 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
US20150194458A1 (en) 2012-02-21 2015-07-09 Hitachi, Ltd. Solid-state image sensing device
JP2016076921A (ja) 2014-10-08 2016-05-12 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
JP2017135693A (ja) 2016-01-21 2017-08-03 パナソニックＩｐマネジメント株式会社 撮像装置

Also Published As

Publication number Publication date
EP4280591A4 (en) 2024-05-29
JPWO2022153628A1 (https=) 2022-07-21
EP4280591A1 (en) 2023-11-22
US20230336886A1 (en) 2023-10-19
US12407951B2 (en) 2025-09-02
WO2022153628A1 (ja) 2022-07-21
CN116711321A (zh) 2023-09-05

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