JPWO2022153628A1 - - Google Patents

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Publication number
JPWO2022153628A1
JPWO2022153628A1 JP2022575079A JP2022575079A JPWO2022153628A1 JP WO2022153628 A1 JPWO2022153628 A1 JP WO2022153628A1 JP 2022575079 A JP2022575079 A JP 2022575079A JP 2022575079 A JP2022575079 A JP 2022575079A JP WO2022153628 A1 JPWO2022153628 A1 JP WO2022153628A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022575079A
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Japanese (ja)
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JP7720574B2 (ja
JPWO2022153628A5 (https=
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Publication of JPWO2022153628A1 publication Critical patent/JPWO2022153628A1/ja
Publication of JPWO2022153628A5 publication Critical patent/JPWO2022153628A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2022575079A 2021-01-15 2021-10-12 撮像装置及びカメラシステム Active JP7720574B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021005352 2021-01-15
JP2021005352 2021-01-15
PCT/JP2021/037712 WO2022153628A1 (ja) 2021-01-15 2021-10-12 撮像装置及びカメラシステム

Publications (3)

Publication Number Publication Date
JPWO2022153628A1 true JPWO2022153628A1 (https=) 2022-07-21
JPWO2022153628A5 JPWO2022153628A5 (https=) 2023-10-10
JP7720574B2 JP7720574B2 (ja) 2025-08-08

Family

ID=82448308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022575079A Active JP7720574B2 (ja) 2021-01-15 2021-10-12 撮像装置及びカメラシステム

Country Status (5)

Country Link
US (1) US12407951B2 (https=)
EP (1) EP4280591A4 (https=)
JP (1) JP7720574B2 (https=)
CN (1) CN116711321A (https=)
WO (1) WO2022153628A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116547813A (zh) * 2020-11-13 2023-08-04 松下知识产权经营株式会社 摄像装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274524A (ja) * 1998-03-20 1999-10-08 Toshiba Corp Ｘ線撮像装置
JP2010219339A (ja) * 2009-03-17 2010-09-30 Sony Corp 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
JP2012134987A (ja) * 2012-01-16 2012-07-12 Canon Inc 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
US20140070075A1 (en) * 2011-02-11 2014-03-13 Sdi Limited Radiation detector and method
US20150194458A1 (en) * 2012-02-21 2015-07-09 Hitachi, Ltd. Solid-state image sensing device
JP2016076921A (ja) * 2014-10-08 2016-05-12 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
JP2017135693A (ja) * 2016-01-21 2017-08-03 パナソニックＩｐマネジメント株式会社 撮像装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08289205A (ja) * 1995-04-13 1996-11-01 Nissan Motor Co Ltd 受光素子およびこれを用いた画像入力装置
US6246436B1 (en) 1997-11-03 2001-06-12 Agilent Technologies, Inc Adjustable gain active pixel sensor
US6323490B1 (en) 1998-03-20 2001-11-27 Kabushiki Kaisha Toshiba X-ray semiconductor detector
JP4317115B2 (ja) 2004-04-12 2009-08-19 国立大学法人東北大学 固体撮像装置、光センサおよび固体撮像装置の動作方法
JP2008079001A (ja) 2006-09-21 2008-04-03 Matsushita Electric Ind Co Ltd 固体撮像装置
KR100882467B1 (ko) 2007-12-28 2009-02-09 주식회사 동부하이텍 이미지센서 및 그 제조방법
EP2966856B1 (en) 2014-07-08 2020-04-15 Sony Depthsensing Solutions N.V. A high dynamic range pixel and a method for operating it
US9967501B2 (en) 2014-10-08 2018-05-08 Panasonic Intellectual Property Management Co., Ltd. Imaging device
JP6474014B1 (ja) * 2017-07-05 2019-02-27 パナソニックＩｐマネジメント株式会社 撮像装置
CN110099229B (zh) * 2018-01-30 2023-04-28 松下知识产权经营株式会社 摄像装置
EP3910934B1 (en) 2019-01-08 2023-11-29 Panasonic Intellectual Property Management Co., Ltd. Imaging device
JP7478968B2 (ja) * 2019-03-20 2024-05-08 パナソニックＩｐマネジメント株式会社 撮像装置
WO2021131300A1 (ja) * 2019-12-23 2021-07-01 パナソニックＩｐマネジメント株式会社 撮像装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274524A (ja) * 1998-03-20 1999-10-08 Toshiba Corp Ｘ線撮像装置
JP2010219339A (ja) * 2009-03-17 2010-09-30 Sony Corp 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
US20140070075A1 (en) * 2011-02-11 2014-03-13 Sdi Limited Radiation detector and method
JP2012134987A (ja) * 2012-01-16 2012-07-12 Canon Inc 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
US20150194458A1 (en) * 2012-02-21 2015-07-09 Hitachi, Ltd. Solid-state image sensing device
JP2016076921A (ja) * 2014-10-08 2016-05-12 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
JP2017135693A (ja) * 2016-01-21 2017-08-03 パナソニックＩｐマネジメント株式会社 撮像装置

Also Published As

Publication number Publication date
EP4280591A4 (en) 2024-05-29
JP7720574B2 (ja) 2025-08-08
EP4280591A1 (en) 2023-11-22
US20230336886A1 (en) 2023-10-19
US12407951B2 (en) 2025-09-02
WO2022153628A1 (ja) 2022-07-21
CN116711321A (zh) 2023-09-05

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