CN116615806A - 碳化硅功率器件及其制造方法 - Google Patents

碳化硅功率器件及其制造方法 Download PDF

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Publication number
CN116615806A
CN116615806A CN202180085616.1A CN202180085616A CN116615806A CN 116615806 A CN116615806 A CN 116615806A CN 202180085616 A CN202180085616 A CN 202180085616A CN 116615806 A CN116615806 A CN 116615806A
Authority
CN
China
Prior art keywords
layer
silicon carbide
main side
power device
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180085616.1A
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English (en)
Chinese (zh)
Inventor
L·克诺尔
S·沃思
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Co ltd
Original Assignee
Hitachi Energy Switzerland AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Switzerland AG filed Critical Hitachi Energy Switzerland AG
Publication of CN116615806A publication Critical patent/CN116615806A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202180085616.1A 2020-12-21 2021-12-02 碳化硅功率器件及其制造方法 Pending CN116615806A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20216084.2A EP4016645B1 (en) 2020-12-21 2020-12-21 Silicon carbide power device and method for manufacturing the same
EP20216084.2 2020-12-21
PCT/EP2021/083908 WO2022135862A1 (en) 2020-12-21 2021-12-02 Silicon carbide power device and method for manufacturing the same

Publications (1)

Publication Number Publication Date
CN116615806A true CN116615806A (zh) 2023-08-18

Family

ID=73856416

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180085616.1A Pending CN116615806A (zh) 2020-12-21 2021-12-02 碳化硅功率器件及其制造方法

Country Status (5)

Country Link
US (1) US20240079454A1 (https=)
EP (1) EP4016645B1 (https=)
JP (1) JP7788457B2 (https=)
CN (1) CN116615806A (https=)
WO (1) WO2022135862A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115497917B (zh) * 2022-08-05 2025-04-22 北京智慧能源研究院 一种碳化硅芯片封装结构
JP2024104186A (ja) * 2023-01-23 2024-08-02 株式会社デンソー 炭化珪素基板、炭化珪素ウェハ、炭化珪素半導体装置
US20240290879A1 (en) * 2023-02-27 2024-08-29 Globalfoundries U.S. Inc. Field-effect transistors with deposited gate dielectric layers
WO2025126658A1 (ja) * 2023-12-15 2025-06-19 富士電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0851203A (ja) * 1994-08-08 1996-02-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
DE19640308A1 (de) 1996-09-30 1998-04-02 Siemens Ag Leistungs-MOS-Bauelement
WO2017047286A1 (ja) * 2015-09-16 2017-03-23 富士電機株式会社 半導体装置
EP3227924B1 (en) 2016-02-02 2020-07-22 ABB Power Grids Switzerland AG Power semiconductor device
JP6662092B2 (ja) 2016-02-23 2020-03-11 株式会社デンソー 化合物半導体装置の製造方法
JP7144329B2 (ja) * 2017-01-25 2022-09-29 ローム株式会社 半導体装置
CN110366783B (zh) * 2017-03-03 2023-04-21 日立能源瑞士股份公司 碳化硅超结功率半导体器件及用于制造该器件的方法
US10056289B1 (en) * 2017-04-20 2018-08-21 International Business Machines Corporation Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap
JP6932997B2 (ja) 2017-05-25 2021-09-08 富士電機株式会社 半導体装置及びその製造方法
JP7327905B2 (ja) * 2017-07-07 2023-08-16 株式会社デンソー 半導体装置およびその製造方法
JP2019102556A (ja) * 2017-11-29 2019-06-24 富士電機株式会社 半導体装置および半導体装置の製造方法
GB2572442A (en) * 2018-03-29 2019-10-02 Cambridge Entpr Ltd Power semiconductor device with a double gate structure
JP7259215B2 (ja) 2018-06-01 2023-04-18 富士電機株式会社 絶縁ゲート型半導体装置及び絶縁ゲート型半導体装置の製造方法
WO2020114666A1 (en) * 2018-12-07 2020-06-11 Abb Schweiz Ag A vertical silicon carbide power mosfet and igbt and a method of manufacturing the same

Also Published As

Publication number Publication date
JP7788457B2 (ja) 2025-12-18
JP2023554134A (ja) 2023-12-26
EP4016645A1 (en) 2022-06-22
WO2022135862A1 (en) 2022-06-30
EP4016645B1 (en) 2025-08-13
US20240079454A1 (en) 2024-03-07

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