CN116457934A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN116457934A
CN116457934A CN202180077758.3A CN202180077758A CN116457934A CN 116457934 A CN116457934 A CN 116457934A CN 202180077758 A CN202180077758 A CN 202180077758A CN 116457934 A CN116457934 A CN 116457934A
Authority
CN
China
Prior art keywords
insulator
oxide
transistor
conductor
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180077758.3A
Other languages
English (en)
Chinese (zh)
Inventor
山崎舜平
大贯达也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN116457934A publication Critical patent/CN116457934A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/10—Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/10—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
CN202180077758.3A 2020-11-20 2021-11-09 半导体装置 Pending CN116457934A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020193215 2020-11-20
JP2020-193215 2020-11-20
PCT/IB2021/060338 WO2022106956A1 (ja) 2020-11-20 2021-11-09 半導体装置

Publications (1)

Publication Number Publication Date
CN116457934A true CN116457934A (zh) 2023-07-18

Family

ID=81708448

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180077758.3A Pending CN116457934A (zh) 2020-11-20 2021-11-09 半导体装置

Country Status (4)

Country Link
US (1) US12537039B2 (https=)
JP (2) JP7798787B2 (https=)
CN (1) CN116457934A (https=)
WO (1) WO2022106956A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230268355A1 (en) * 2022-02-23 2023-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device and method for fabricating the same

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
JP3620041B2 (ja) * 1999-12-09 2005-02-16 セイコーエプソン株式会社 メモリデバイス及びその製造方法、並びに電子機器
US6566698B2 (en) 2000-05-26 2003-05-20 Sony Corporation Ferroelectric-type nonvolatile semiconductor memory and operation method thereof
JP4670177B2 (ja) * 2000-05-26 2011-04-13 ソニー株式会社 強誘電体型不揮発性半導体メモリ及びその駆動方法
EP1187140A3 (en) * 2000-09-05 2002-09-11 Matsushita Electric Industrial Co., Ltd. Method for driving semiconductor memory
JP3591497B2 (ja) 2001-08-16 2004-11-17 ソニー株式会社 強誘電体型不揮発性半導体メモリ
US6773929B2 (en) * 2001-09-14 2004-08-10 Hynix Semiconductor Inc. Ferroelectric memory device and method for manufacturing the same
JP2003229541A (ja) * 2002-01-31 2003-08-15 Sony Corp 半導体記憶装置及びその製造方法
JP4132936B2 (ja) * 2002-04-16 2008-08-13 富士通株式会社 半導体装置の製造方法
US7291878B2 (en) 2003-06-03 2007-11-06 Hitachi Global Storage Technologies Netherlands B.V. Ultra low-cost solid-state memory
KR100781737B1 (ko) 2004-07-22 2007-12-03 니폰덴신뎅와 가부시키가이샤 쌍안정 저항값 취득장치 및 그 제조방법과 금속 산화물박막 및 그 제조방법
JP2007013011A (ja) * 2005-07-01 2007-01-18 Seiko Epson Corp 強誘電体メモリ装置及び表示用駆動ｉｃ
JP2007266494A (ja) * 2006-03-29 2007-10-11 Toshiba Corp 半導体記憶装置
JP2008071897A (ja) * 2006-09-13 2008-03-27 Toshiba Corp 半導体メモリ及び半導体メモリの製造方法
JP4901515B2 (ja) * 2007-02-07 2012-03-21 株式会社東芝 強誘電体半導体記憶装置
JP2009116940A (ja) * 2007-11-05 2009-05-28 Toshiba Corp 半導体記憶装置
JP4660564B2 (ja) * 2008-03-11 2011-03-30 株式会社東芝 半導体記憶装置
JP2010044844A (ja) * 2008-08-18 2010-02-25 Toshiba Corp 半導体記憶装置
JP2010140919A (ja) 2008-12-09 2010-06-24 Hitachi Ltd 酸化物半導体装置及びその製造方法並びにアクティブマトリクス基板
JP2011029258A (ja) * 2009-07-22 2011-02-10 Toshiba Corp 半導体記憶装置
JP2011066062A (ja) * 2009-09-15 2011-03-31 Toshiba Corp 半導体記憶装置
US12154817B1 (en) * 2010-11-18 2024-11-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
TWI492368B (zh) 2011-01-14 2015-07-11 半導體能源研究所股份有限公司 半導體記憶裝置
US10229874B1 (en) * 2018-03-22 2019-03-12 Micron Technology, Inc. Arrays of memory cells individually comprising a capacitor and a transistor and methods of forming such arrays
JP2019201034A (ja) 2018-05-14 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器
US10546629B1 (en) * 2018-10-10 2020-01-28 Micron Technology, Inc. Memory cell sensing based on precharging an access line using a sense amplifier
US12082390B2 (en) 2019-03-29 2024-09-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US12057508B2 (en) 2019-03-29 2024-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US10916548B1 (en) * 2019-07-25 2021-02-09 Micron Technology, Inc. Memory arrays with vertical access transistors
EP4447640A4 (en) * 2022-06-21 2025-04-30 Boe Technology Group Co., Ltd. SCOREBOARD AND DISPLAY DEVICE
US20240371854A1 (en) * 2023-01-18 2024-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device and method of manufacturing

Also Published As

Publication number Publication date
JP2026050393A (ja) 2026-03-19
US12537039B2 (en) 2026-01-27
JPWO2022106956A1 (https=) 2022-05-27
WO2022106956A1 (ja) 2022-05-27
US20240013829A1 (en) 2024-01-11
JP7798787B2 (ja) 2026-01-14

Similar Documents

Publication Publication Date Title
CN115867968A (zh) 半导体装置的驱动方法
JP2025146893A (ja) 半導体装置の駆動方法
JP2026050393A (ja) 半導体装置
JP2025156443A (ja) 半導体装置の駆動方法
JP7711071B2 (ja) 半導体装置、及び電子機器
US20250008741A1 (en) Semiconductor device
JP7723677B2 (ja) 半導体装置、及び電子機器
WO2023144652A1 (ja) 記憶装置
KR20240150460A (ko) 반도체 장치
CN118696612A (zh) 半导体装置以及半导体装置的制造方法
WO2022064304A1 (ja) 半導体装置の駆動方法
JP7730833B2 (ja) 半導体装置、および半導体装置の駆動方法
US20250008739A1 (en) Memory element and memory device
TW202441602A (zh) 半導體裝置
WO2024042404A1 (ja) 半導体装置
KR20240155889A (ko) 반도체 장치
WO2023144653A1 (ja) 記憶装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination