CN116438805A - 光接收元件和测距系统 - Google Patents

光接收元件和测距系统 Download PDF

Info

Publication number
CN116438805A
CN116438805A CN202180075865.2A CN202180075865A CN116438805A CN 116438805 A CN116438805 A CN 116438805A CN 202180075865 A CN202180075865 A CN 202180075865A CN 116438805 A CN116438805 A CN 116438805A
Authority
CN
China
Prior art keywords
substrate
light
pixel
spad
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180075865.2A
Other languages
English (en)
Chinese (zh)
Inventor
岛田翔平
樋山拓己
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN116438805A publication Critical patent/CN116438805A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
    • G01S17/931—Lidar systems specially adapted for specific applications for anti-collision purposes of land vehicles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
    • G01S17/933—Lidar systems specially adapted for specific applications for anti-collision purposes of aircraft or spacecraft
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4913—Circuits for detection, sampling, integration or read-out
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/706—Pixels for exposure or ambient light measuring
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Optical Distance (AREA)
CN202180075865.2A 2021-01-06 2021-12-22 光接收元件和测距系统 Pending CN116438805A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-000770 2021-01-06
JP2021000770 2021-01-06
PCT/JP2021/047513 WO2022149467A1 (ja) 2021-01-06 2021-12-22 受光素子および測距システム

Publications (1)

Publication Number Publication Date
CN116438805A true CN116438805A (zh) 2023-07-14

Family

ID=82357709

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180075865.2A Pending CN116438805A (zh) 2021-01-06 2021-12-22 光接收元件和测距系统

Country Status (6)

Country Link
US (1) US20240313022A1 (https=)
EP (1) EP4276905A4 (https=)
JP (1) JPWO2022149467A1 (https=)
KR (1) KR20230124908A (https=)
CN (1) CN116438805A (https=)
WO (1) WO2022149467A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019075394A (ja) * 2017-10-12 2019-05-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、電子装置
US20260075970A1 (en) * 2022-09-02 2026-03-12 Sony Semiconductor Solutions Corporation Photodetector and distance measurement apparatus
JP2024078505A (ja) * 2022-11-30 2024-06-11 キヤノン株式会社 光電変換装置
EP4651207A4 (en) * 2023-01-13 2026-04-08 Sony Semiconductor Solutions Corp LIGHT DETECTION DEVICE
WO2024214356A1 (ja) * 2023-04-12 2024-10-17 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
WO2025069258A1 (ja) * 2023-09-27 2025-04-03 ソニーセミコンダクタソリューションズ株式会社 半導体装置および光検出装置
WO2025158884A1 (ja) * 2024-01-22 2025-07-31 ソニーセミコンダクタソリューションズ株式会社 半導体装置および電子機器
WO2025192019A1 (ja) * 2024-03-11 2025-09-18 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び測距システム
WO2026053822A1 (ja) * 2024-09-09 2026-03-12 ソニーセミコンダクタソリューションズ株式会社 半導体素子および電子機器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3838806B2 (ja) * 1999-03-26 2006-10-25 株式会社東芝 信号増倍ｘ線撮像装置
JP6024103B2 (ja) * 2011-06-30 2016-11-09 ソニー株式会社 撮像素子、撮像素子の駆動方法、撮像素子の製造方法、および電子機器
US9331116B2 (en) 2014-01-15 2016-05-03 Omnivision Technologies, Inc. Back side illuminated single photon avalanche diode imaging sensor with high short wavelength detection efficiency
KR102450562B1 (ko) * 2014-03-13 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
JP6193171B2 (ja) * 2014-04-11 2017-09-06 株式会社東芝 光検出器
CN107949913B (zh) * 2015-09-09 2019-04-19 松下知识产权经营株式会社 固体摄像元件
DE102015118165A1 (de) * 2015-10-23 2017-04-27 Infineon Technologies Ag Elektrische baugruppe, umfassend eine halbleiterschaltvorrichtung und eine klemmdiode
US20180220093A1 (en) * 2017-02-01 2018-08-02 Renesas Electronics Corporation Image sensor
JP2018125845A (ja) * 2017-02-01 2018-08-09 ルネサスエレクトロニクス株式会社 撮像素子
JP7171213B2 (ja) * 2018-04-02 2022-11-15 キヤノン株式会社 光電変換装置及び撮像システム
JP2020034523A (ja) * 2018-08-31 2020-03-05 ソニーセミコンダクタソリューションズ株式会社 受光素子および測距システム
TWI845592B (zh) * 2019-01-30 2024-06-21 日商索尼半導體解決方案公司 受光裝置及測距系統
US12389695B2 (en) * 2019-02-20 2025-08-12 Sony Semiconductor Solutions Corporation Imaging device
JP7327949B2 (ja) * 2019-02-27 2023-08-16 キヤノン株式会社 光電変換装置、光電変換システム、及び移動体
JP7278821B2 (ja) * 2019-03-22 2023-05-22 株式会社東芝 センサ及び距離計測装置
JP7165873B2 (ja) * 2019-03-26 2022-11-07 パナソニックＩｐマネジメント株式会社 撮像処理回路、撮像システム、撮像処理方法及びプログラム
CN117080233A (zh) * 2019-03-29 2023-11-17 索尼半导体解决方案公司 固态摄像装置和电子设备
JP2021002542A (ja) * 2019-06-19 2021-01-07 ソニーセミコンダクタソリューションズ株式会社 アバランシェフォトダイオードセンサ及び測距装置
KR20210099841A (ko) * 2020-02-05 2021-08-13 삼성전자주식회사 돌출한 채널 전극을 가진 트랜지스터를 포함하는 이미지 센서
KR102789682B1 (ko) * 2020-05-25 2025-04-01 에스케이하이닉스 주식회사 이미지 센싱 장치
CN116547820A (zh) * 2020-10-27 2023-08-04 索尼半导体解决方案公司 光接收装置和距离测量设备

Also Published As

Publication number Publication date
JPWO2022149467A1 (https=) 2022-07-14
EP4276905A1 (en) 2023-11-15
US20240313022A1 (en) 2024-09-19
TW202228301A (zh) 2022-07-16
WO2022149467A1 (ja) 2022-07-14
KR20230124908A (ko) 2023-08-28
EP4276905A4 (en) 2024-05-29

Similar Documents

Publication Publication Date Title
CN116438805A (zh) 光接收元件和测距系统
KR102889200B1 (ko) 애벌란시 포토 다이오드 센서 및 거리 측정 장치
CN113853686B (zh) 光接收元件和电子设备
CN211507638U (zh) 受光装置以及测距系统
CN110036491A (zh) 雪崩光电二极管传感器
WO2020202888A1 (ja) センサチップおよび測距装置
JP2022113371A (ja) 光検出装置
JP2023066297A (ja) 光検出装置および測距システム
CN116076072A (zh) 距离测量系统及光检测装置
TW202405476A (zh) 測距模組
CN114585941A (zh) 固态成像装置和距离测量系统
WO2022269982A1 (ja) 受光素子
CN116171370A (zh) 表面发射激光装置和电子设备
US20250040269A1 (en) Photodetection device and distance measuring system
US20230417920A1 (en) Ranging sensor, ranging system, and electronic device
TWI913367B (zh) 受光元件及測距系統
JP2023154356A (ja) 光検出装置および測距装置ならびに撮像装置
WO2025187718A1 (en) Light detection device and electronic apparatus
US20250355093A1 (en) Light receiving device and distance measuring device
WO2025009424A1 (ja) 光検出装置及び測距システム
JP2024137258A (ja) 光源駆動装置及び測距システム
KR20260039647A (ko) 광검출기 및 광검출 시스템
WO2026070341A1 (ja) 光検出装置
KR20260048621A (ko) 고체 촬상 소자, 광 검출 소자 및 광 검출 시스템
WO2025063105A1 (ja) 発光装置及び測距装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination