CN116349406A - SiSiC部件和加热器具 - Google Patents

SiSiC部件和加热器具 Download PDF

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Publication number
CN116349406A
CN116349406A CN202180068985.XA CN202180068985A CN116349406A CN 116349406 A CN116349406 A CN 116349406A CN 202180068985 A CN202180068985 A CN 202180068985A CN 116349406 A CN116349406 A CN 116349406A
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China
Prior art keywords
region
sic
sisic
molded body
tubular region
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CN202180068985.XA
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安藤良太
大山峻幸
须佐俊介
山田兼士
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AGC Inc
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Asahi Glass Co Ltd
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Abstract

本发明涉及一种SiSiC部件，是在内部设置有至少1个长孔的SiSiC部件，具有管状区域A和管外区域B，上述管状区域A为上述长孔的外周的区域，上述管外区域B为上述管状区域A的外侧的区域，与上述管状区域A中的Si单质的以体积％计的含量相比，上述管外区域B中的Si单质的以体积％计的含量多。

Description

SiSiC部件和加热器具
技术领域
本发明涉及一种SiSiC部件。
背景技术
以往，已知有含有碳化硅(SiC)和硅(Si)的复合材料、即SiSiC部件(专利文献1)。
现有技术文献
专利文献
专利文献1:国际公开第2019/194137号
发明内容
SiSiC部件由于导热性等特性优异而被期待用于各种用途，也期望开发出一种新的SiSiC部件。
例如，即便想要通过使用钻头的加工在SiSiC部件开设内径为2mm以下且长度为100mm以上的长孔，也会由于SiSiC部件非常硬而使钻头折弯，无法实现。即便是使用激光的加工，也无法在维持内径2mm以下的状态下使激光到达至100mm深度。
本发明是鉴于以上方面而作出的，其目的在于提供一种以往没有的新型的SiSiC部件。
本发明人等经过深入研究，结果发现通过采用下述构成，可实现上述目的，完成了本发明。
即，本发明提供以下的[1]～[6]。
[1]一种SiSiC部件，是在内部设置有至少1个长孔的SiSiC部件，具有管状区域A和管外区域B，上述管状区域A为上述长孔的外周的区域，上述管外区域B为上述管状区域A的外侧的区域，与上述管状区域A中的Si单质的以体积％计的含量相比，上述管外区域B中的Si单质的以体积％计的含量多。
[2]根据上述[1]所述的SiSiC部件，其中，上述管状区域A中的Si单质的直径与上述管外区域B中的Si单质的直径之比A/B小于0.2。
[3]一种SiSiC部件，是在内部设置有至少1个长孔的SiSiC部件，具有管状区域A和管外区域B，上述管状区域A为上述长孔的外周的区域，上述管外区域B为上述管状区域A的外侧的区域，上述管状区域A中的Si单质的含量为20体积％以下，上述管状区域A中的Si单质的直径为10μm以下。
[4]根据上述[1]～[3]中任一项所述的SiSiC部件，其中，上述长孔的直径为0.1～2mm，上述长孔的长度为100～450mm。
[5]根据上述[1]～[4]中任一项所述的SiSiC部件，其中，上述管外区域B中的Si单质与SiC的体积比Si/SiC为20/80～40/60。
[6]一种加热器具，具备上述[1]～[5]中任一项所述的SiSiC部件和棒状部件，上述棒状部件插入上述长孔中。
根据本发明，能够提供以往没有的新型的SiSiC部件。
附图说明
图1是表示SiSiC部件的立体图。
图2是表示SiC成型体的截面图。
图3是表示在SiC成型体的槽内配置有碳管的状态的截面图。
图4是表示用填充材料填埋SiC成型体的槽的状态的截面图。
图5是表示Si喷出存在于长孔的状态的截面示意图。
图6是表示具有接合面的SiSiC部件的截面图。
具体实施方式
图1是表示SiSiC部件1的立体图。
SiSiC部件1是含有硅(Si)和碳化硅(SiC)的复合材料，例如，热膨胀率低，耐热性、耐磨损性、导热性、强度等优异。
在SiSiC部件1的内部设置有在一个方向长的长孔2。
图1中仅图示了1个长孔2，但SiSiC部件1可以具有多个长孔2。存在多根长孔2时，各长孔2可以相互并行，也可以交叉，可根据SiSiC部件1的用途而适当地设定。长孔2可以弯曲。
长孔2的一个端部可以被密封，也可以从SiSiC部件1的一端贯通到另一端。长孔2可根据SiSiC部件1的用途而适当地设定。
长孔的直径可根据SiSiC部件的用途而适当地设定，例如为0.1～2mm，优选为0.2～1.6mm，更优选为0.5～1.2mm。
长孔的长度可根据SiSiC部件的用途而适当地设定，例如为100～450mm，优选为120～400mm，更优选为150～300mm。
长孔的直径和长度依照后述的碳管(参照图3和图4)的直径和长度。
如图1所示，SiSiC部件1具有管状区域A和管外区域B，上述管状区域A为长孔2的外周的区域，上述管外区域B为管状区域A的外侧的区域。
〈第1实施方式〉
与管状区域A中的Si单质的含量(单位：体积％)相比，管外区域B中的Si单质的含量(单位：体积％)多。
即，管状区域A与管外区域B可以根据各自的Si单质的含量(单位：体积％)而相互区分。
具体而言，管状区域A中的Si单质的含量(单位：体积％)与管外区域B中的Si单质的含量(单位：体积％)之比(A/B)小于1，优选为0.5以下，更优选为0.3以下。
优选管外区域B中的Si单质的直径比管状区域A中的Si单质的直径大。
具体而言，管状区域A中的Si单质的直径与管外区域B中的Si单质的直径之比(A/B)优选小于1，更优选为0.5以下，进一步优选为0.3以下，特别优选小于0.2。
〈第2实施方式〉
管状区域A中的Si单质的含量为20体积％以下，且管状区域A中的Si单质的直径为10μm以下。
管状区域A中的Si单质的含量优选为17体积％以下，更优选为14体积％以下。
管状区域A中的Si单质的直径优选为8μm以下，更优选为6μm以下。
另一方面，优选管外区域B中的Si单质的含量超过20体积％，且管外区域B中的Si单质的直径超过10μm。
管外区域B中的Si单质的含量优选为22体积％以上，更优选为24体积％以上。
管外区域B中的Si单质的直径优选为12μm以上，更优选为14μm以上。
任一实施方式中，管外区域B中的Si单质与SiC的体积比(Si/SiC)均优选为20/80～40/60，更优选为22/78～30/70。
Si单质和SiC的含量(单位：体积％)以及Si单质的直径如下由光学显微镜照片求出。
在SiSiC部件的截面的显微镜照片中，最黑的部分为C单质，比C单质浅的灰色部分为SiC，最浅的白色部分为Si单质。
使用图像解析软件(WinROOF2015)由SiSiC部件的任意截面的显微镜照片求出C单质、SiC和Si单质的面积比，将求出的面积比直接作为各自的体积比。
一并求出各Si单质的等效圆直径，进行平均并将其作为Si单质的直径。
均使用以任意的5个视场求出的平均值。
在任一实施方式中，SiSiC部件的热导率均优选为180W/(m·K)以上，更优选为200W/(m·K)以上。
热导率通过使用NETZSCH公司制的LFA447(Nanoflash)的氙气灯光的闪光法在室温(23℃)下求出。更详细而言，求出在中央包含SiSiC部件的管状区域A的直径为25.4mm的范围的热导率。测定厚度为6mm。
〈制造方法〉
基于图2～图4对制造SiSiC部件的方法进行说明。
《SiC成型体的制作》
图2是表示SiC成型体3的截面图。
首先，形成SiC成型体3。SiC成型体3是含有SiC粒子(未图示)的成型体，具有U形的槽4。槽4的形状只要为可嵌入后述的碳管5(参照图3和图4)的形状，就没有特别限定。
SiC成型体是具有多个细孔的多孔体。因此，如后所述，使熔融的Si单质含浸于SiC成型体。
SiC成型体的空隙率优选为30～70体积％，更优选为40～60体积％。空隙率使用压汞仪求出。
SiC成型体的尺寸和形状没有特别限制，可根据最终得到的SiSiC部件的尺寸和形状而适当地设定。
SiC成型体的制作例如使用激光照射造型法、粘合剂喷射造型法等3D(三维)打印法。3D打印法中，通过逐层地形成层并依次层叠而得到期望形状的层叠体即SiC成型体。依次层叠的各层的厚度例如为0.2～0.3mm。
激光照射造型法中，对包含SiC粒子和粘合剂的层照射激光。利用该激光的热使存在于照射区域的粘合剂熔融和固化，SiC粒子彼此粘结。通过对依次层叠的各层实施该作业而制作SiC成型体。
粘合剂喷射造型法中，从喷墨喷嘴对包含SiC粒子的层喷射粘合剂。在喷射了粘合剂的区域中，SiC粒子彼此粘结。通过对依次层叠的各层实施该作业而制作SiC成型体。
粘合剂喷射造型法中，可以使包含SiC粒子的层预先含有固化剂(例如，含有二甲苯磺酸、硫酸等的酸性物质水溶液)，仅在所喷射的粘合剂与固化剂接触的区域使粘合剂反应(固化)。固化剂的含量相对于SiC粒子，例如为0.1～1质量％。
SiC粒子优选为α－SiC。
SiC粒子的平均粒径例如为5～300μm，优选为30～200μm，更优选为50～180μm。
一般而言，随着SiC粒子变大，所形成的SiC成型体的细孔直径增大。因此，可以根据期望的细孔直径而适当地选择所使用的SiC粒子的平均粒径。
SiC粒子的平均粒径使用激光衍射·散射式粒径分布测定装置(MT3300EXII，MicrotracBEL公司制)测量。
作为粘合剂，可举出酚醛树脂等热固性树脂、呋喃树脂等自固性树脂等。
通过3D打印法，可以一边形成槽一边制作SiC成型体。
或者首先制作没有槽的SiC成型体，其后使用公知的切削工具形成槽。
制作没有槽的SiC成型体时，也可以不使用3D打印法。
例如，可以通过将SiC粒子和粘合剂的混合物(SiC成型体原料)浇铸到模具中并干燥而制作SiC成型体。SiC成型体原料的固体成分浓度例如可以在5～100质量％的范围适当地变更。干燥后，可以在非活性气氛中，在高温(例如1500～2300℃)下进行加热，使SiC成型体烧结。
作为这样的方法，例如，可举出日本特开平5－32458号公报中记载的方法。
《碳管的配置》
接下来，如图3所示，在SiC成型体3的槽4配置碳管5。
图3是表示在SiC成型体3的槽4配置有碳管5的状态的截面图。
碳管5例如为具有多根碳纤维6以及填埋碳纤维6彼此之间的环氧树脂等粘合剂7的管状的部件。碳管5在得到的SiSiC部件1(参照图1)中成为管状区域A。
碳管中的碳纤维的含量例如为50～80体积％，优选为55～75体积％。
碳纤维的直径例如为2～10μm，优选为4～8μm。
碳管例如通过500℃以上的高温温度下的加热(具体而言，例如，后述的Si含浸下的加热)使粘合剂挥发，与SiC成型体同样地成为多孔体。由此，如后所述，在碳管中含浸所熔融的Si而生成SiC。
碳管不限于直线状的管，可以弯曲。
碳管的一个端部可以封闭。另外，可以使用两端开口的碳管，并且将一个端部用后述的填充材料填埋。
《填充》
接下来，如图4所示，用含有SiC粒子的填充材料8填埋SiC成型体3的槽4的内部且碳管5的上方。
图4是表示用填充材料8填埋了SiC成型体3的槽4的状态的截面图。
例如，将SiC粒子和粘合剂的混合物放入槽中，其后，将该混合物进行干燥或加热。由此，槽的内部被具有与SiC成型体同样的组成的填充材料填埋。
使用上述的粘合剂喷射造型法时，例如，将SiC粒子和固化剂的混合物放入槽中，其后，从喷墨喷嘴对该混合物喷射粘合剂。由此，槽的内部被具有与SiC成型体同样的组成的填充材料填埋。
此时，在槽深的情况下，可以通过反复进行放入混合物并喷射粘合剂来阶段性地用填充材料填埋槽。
以下，只要没有特殊说明，则填充材料也作为SiC成型体的一部分来处理。
《C含浸和干燥》
接下来，可以任意地使分散有碳粒子的分散液(碳分散液)含浸于SiC成型体。以下，也将其称为“C含浸”。
由此，向作为多孔体的SiC成型体的细孔导入碳粒子。
此时，如后所述如果使Si含浸于SiC成型体，则该Si的一部分也与该碳粒子(C)反应而生成碳化硅(SiC)。
从容易导入碳粒子这样的理由出发，优选C含浸在减压环境下实施。其后，优选从减压环境变更为加压环境。由此，碳粒子更容易被导入SiC成型体的细孔。
碳分散液中的碳粒子的含量例如为20～60质量％，优选为30～55质量％。
碳粒子的凝聚粒子(二次粒子)的平均粒径例如为100～200nm，优选为110～150nm。
作为碳分散液的分散介质，可举出水；甲醇、乙醇等醇等。
C含浸后，优选将SiC成型体干燥。由此，除去碳分散液的分散介质。
作为干燥方法，可举出自然干燥、加热干燥、真空冷冻干燥等。
加热干燥中挥发除去分散介质。分散介质为水时，加热温度例如为100～120℃。
真空冷冻干燥方式中，通过在干燥室内冷却而将分散介质冷冻。冷却温度为分散介质冷冻的温度以下的温度，分散介质包含水时，例如为－50～－5℃。冷冻后，通过对干燥室内进行真空排气而升华除去分散介质。
《Si含浸》
接下来，使硅(Si)含浸于SiC成型体。以下，也将其称为“Si含浸”。
具体而言，例如，在使SiC成型体与Si单质相互接触的状态下，将它们(SiC成型体和Si单质)加热，使Si单质熔融。由此，所熔融的Si单质通过毛细管现象而含浸于作为多孔体的SiC成型体。
此时，通过使Si单质在配置于SiC成型体的上表面的状态下熔融，从而利用重力，更容易使所熔融的Si单质含浸于SiC成型体。
使Si单质熔融的环境优选为减压环境。
加热温度只要为Si的熔点以上即可。Si的熔点根据测定方法而稍有不同，大体为1410～1414℃。加热温度优选为1500℃以上。
另一方面，加热温度例如优选为2300℃以下，更优选为2000℃以下，进一步优选为1650℃以下。
含浸于SiC成型体的Si的一部分也到达碳管。如上所述，碳管通过Si含浸下的加热而成为多孔体。因此，Si也被导入碳管。而且，与构成碳管的碳纤维(C)反应而生成碳化硅(SiC)。
导入SiC成型体的Si中，未与碳(C)反应的部分直接残留。以下，也将这样的Si称为“游离Si”。如此，可得到含有SiC和游离Si的复合材料即SiSiC部件。
在得到的SiSiC部件中，作为碳管的区域为管状区域A(参照图1)，其以外的区域(SiC成型体和填充材料)为管外区域B(参照图1)。
导入SiC成型体的Si的量可以根据最终得到的SiSiC部件中的Si单质的含量等而适当地设定。
得到的SiSiC部件通过使Si单质熔融时的加热而被烧结。
即，SiC(包含新生成的SiC)彼此、以及SiC与Si结合而得到致密的烧结体。
因此，得到的SiSiC部件为含有Si和SiC的复合材料，且也为烧结体。
〈Si喷出〉
在此，基于图5对抑制Si喷出进行说明。
图5是表示Si喷出9存在于长孔2的状态的截面示意图。
硅(Si)的密度在液体状态下为2.560g/cm3，与此相对，在固体状态下为2.293g/cm3。
即，如果游离Si从加热的熔液的状态被冷却而返回到固体状态，则体积增大12％而膨胀。
因此，如图5所示，游离Si可能体积膨胀，通过管状区域A而成为喷出(Si喷出9)，向长孔2突出。
长孔2中存在大的Si喷出9(图5中，Si喷出量g的值大)时，难以插入热电偶等棒状部件(或者无法插入)。
然而，碳(C)与硅(Si)反应而变成碳化硅(SiC)时，如下述式所示，体积增加。
C(52.1cm3)+Si(96.8cm3)→SiC(100.0cm3)
因此，在管状区域A(碳管)中，所导入的Si与碳纤维(C)反应而生成SiC时，产生体积膨胀，形成致密的管状壁。
由此，游离Si即便在体积膨胀的情况下也难以通过致密的管状区域A。如此可抑制Si喷出，容易向长孔中插入热电偶等。
Si喷出量g优选小于1mm，更优选小于0.2mm。
应予说明，由于游离Si不易通过管状区域A，因此在得到的SiSiC部件中，如上所述，与管状区域A中的Si单质的含量(单位：体积％)相比，管外区域B中的Si单质的含量(单位：体积％)变多。
另外，与管状区域A中的Si单质的直径相比，管外区域B中的Si单质的直径变大。
〈用途〉
具有长孔的SiSiC部件的用途没有特别限定，由于导热性、强度等优异，因此，可用作加热器具。例如，适合作为IH(感应加热)烹调器等加热烹调器所具备的顶板。
加热烹调器的顶板为载置锅等被加热体的部件。
作为顶板的材料，以往使用陶瓷等。对顶板要求能够迅速升降温且耐冲击性高。因此，作为加热烹调器的顶板，可优选使用SiSiC部件。
为了控制温度，在SiSiC部件所具有的长孔中插入热电偶(未图示)。由此，能够把握SiSiC部件、进而配置在SiSiC部件上的被加热体的温度。
加热烹调器可以用作组合式厨房的一部分。
组合式厨房具有操作台、加热烹调器等设备，这些设备通过台面连接。作为台面的材料，可使用不锈钢、人工大理石、陶瓷等。
加热烹调器例如可组装到设置于台面的开口而使用。这种情况下，加热烹调器的顶板可以构成组合式厨房的台面的一部分。
在此，基于图6对加热烹调器中使用的具有长孔的SiSiC部件的另一方式进行研究。
图6是表示具有接合面的SiSiC部件21的截面图。
首先，与基于图2说明的方法同样地制作具有槽4的SiC成型体3和没有槽的SiC成型体3。
其后，如图6所示，在具有槽4的SiC成型体3上配置没有槽的SiC成型体3。此时，使用粘接剂22将两者的界面接合。
考虑将图6所示的SiSiC部件21用作加热烹调器的顶板的情况。这种情况下，在SiSiC部件21的上表面载置被加热体(未图示)，从下表面侧加热。但是，根据所使用的粘接剂22，在接合面中热被遮挡，因此有时热难以传递到被加热体(即，导热性差)。
与此相对，SiSiC部件1(参照图1)由于没有这样的接合面，因此，相对容易将被加热体加热。即，导热性良好。
SiSiC部件的用途不限于上述的加热烹调器的顶板，除此之外，可举出加热实验用电炉的加热器部件、半导体器件制造装置用部件等。
根据SiSiC部件的用途，可以向SiSiC部件的长孔中插入电极等棒状部件而使用。
实施例
以下举出实施例对本发明进行具体说明。但是，本发明不限于以下说明的实施例。
以下，例1～例2为实施例，例3～例4为比较例。
〈例1〉
使用粉末层叠型3D打印机，通过粘合剂喷射造型法制作没有槽的SiC成型体。
更详细而言，首先，使用SiC粒子与固化剂的混合物形成层(厚度：约0.2mm)，从喷墨喷嘴对形成的层喷射粘合剂。反复进行该操作，制作长方体状的SiC成型体(300mm×300mm×20mm)。
作为SiC粒子，使用α－SiC粉末(平均粒径：80μm，信浓电气制炼公司制)。作为固化剂，使用ASK Chemicals Japan株式会社制的市售品(含有二甲苯磺酸和硫酸的酸性物质水溶液)。混合物中的固化剂的含量相对于SiC粒子为0.3质量％。作为粘合剂，使用呋喃树脂(ASK Chemicals Japan株式会社制)。
接下来，使用铣床在制作的没有槽的SiC成型体形成后述的碳管嵌入的形状的槽。
接下来，在所形成的槽配置碳管(外形：1.5mm，内径：0.7mm，长度：超过300mm)。
在此，使用将多根碳纤维用粘合剂(环氧树脂)粘合而形成的碳管(碳纤维的直径：7μm，碳纤维的含量：63体积％，粘合剂的含量：37体积％，DPP公司制)。
接下来，将配置碳管后的槽用含有SiC粒子的填充材料填埋。
更详细而言，在用于层形成的混合物中混合与从喷墨喷嘴喷射的粘合剂相同的粘合剂，将其放入槽(碳管上)后，进行干燥。
接下来，实施C含浸。即，将SiC成型体在减压环境下浸渍于碳粒子(二次粒子的平均粒径：120nm)分散于水中而成的碳分散液(碳粒子的含量：40质量％)。如此使碳分散液含浸于SiC成型体。
其后，进行干燥(真空冷冻干燥)。具体而言，将含浸碳分散液后的SiC成型体在干燥室内以－10～0℃的温度冷却20分钟后，对干燥室内进行真空排气。
使用热分析法对干燥后的SiC成型体测量碳粒子相对于SiC的含量，结果在成为管外区域B的区域中为20质量％。
接下来，实施Si含浸。更详细而言，首先，在反应炉内，在SiC成型体上配置Si单质(12.7g)。接下来，在形成为减压环境的状态下将反应炉内加热至1550℃。由此，使Si单质熔融并含浸于SiC成型体中，使其一部分到达碳管而生成SiC。
如此得到含有游离Si和SiC的烧结体即SiSiC部件。
〈例2〉
除没有进行C含浸和其后的干燥之外，与例1同样地制作SiSiC部件。
〈例3〉
首先，与例1同样地制作具有槽的SiC成型体。接下来，将碳棒(直径：0.7mm，长度：超过300mm)配置于槽中。接下来，将配置碳棒后的槽与例1同样地用填充材料填埋，进行干燥。通过干燥使填充材料固化后，拔出碳棒，形成长孔(直径：0.7mm，长度：300mm)。
其后，与例1同样地进行C含浸、干燥和Si含浸而制作SiSiC部件。
〈例4〉
除没有进行C含浸和其后的干燥之外，与例3同样地制作SiSiC部件。
〈评价〉
通过上述的方法对所得到的SiSiC部件求出管状区域A和管外区域B中的Si单质的含量和直径。将结果示于下述表1。
应予说明，例3和例4中，将拔出碳棒而形成的长孔的外周的区域作为管状区域A，将管状区域A的外侧的区域作为管外区域B。
进而，由所得到的SiSiC部件的截面的显微镜照片求出Si喷出量g(参照图5)。使用任意的5个视场的平均值作为Si喷出量g。下述表1中，将Si喷出量g小于0.2mm的情况记载为“○”，Si喷出量g为0.2mm以上的情况记载为“×”。如果结果为○，则可以评价为抑制Si喷出的效果优异。
[表1]
Figure BDA0004166341850000131
〈评价结果总结〉
如上述表1所示，例1～例2中，与管状区域A相比，管外区域B的Si单质(游离Si)的含量多。
另外，例1～例2中，管状区域A的Si单质(游离Si)的含量为20体积％以下，直径为10μm以下。
这样的例1～例2抑制了Si喷出。
另一方面，例3～例4均不满足这些。
应予说明，将例1与例2进行对比，例1(有C含浸)与例2(无C含浸)相比，管外区域B的Si单质的含量少，管外区域B的Si单质的直径小。推测这是由于经C含浸的例1中，在管外区域B，所含浸的熔融Si与C反应。
以上对本发明的优选的实施方式进行了说明，但本发明不限于上述的实施方式，只要记载于专利要求的范围，就可以进行各种设计变更。本申请基于2020年10月9日申请的日本专利申请2020－171499号，其内容作为参照被引入本说明书中。
符号说明
1：SiSiC部件
2：长孔
3：SiC成型体
4：槽
5：碳管
6：碳纤维
7：粘合剂
8：填充材料
9：Si喷出
21：SiSiC部件
22：粘接剂
A：管状区域
B：管外区域
g：Si喷出量

Claims (6)

1.一种SiSiC部件，是在内部设置有至少1个长孔的SiSiC部件，
具有管状区域A和管外区域B，
所述管状区域A为所述长孔的外周的区域，
所述管外区域B为所述管状区域A的外侧的区域，
与所述管状区域A中的Si单质的以体积％计的含量相比，所述管外区域B中的Si单质的以体积％计的含量多。
2.根据权利要求1所述的SiSiC部件，其中，所述管状区域A中的Si单质的直径与所述管外区域B中的Si单质的直径之比A/B小于0.2。
3.一种SiSiC部件，是在内部设置有至少1个长孔的SiSiC部件，
具有管状区域A和管外区域B，
所述管状区域A为所述长孔的外周的区域，
所述管外区域B为所述管状区域A的外侧的区域，
所述管状区域A中的Si单质的含量为20体积％以下，
所述管状区域A中的Si单质的直径为10μm以下。
4.根据权利要求1～3中任一项所述的SiSiC部件，其中，
所述长孔的直径为0.1～2mm，
所述长孔的长度为100～450mm。
5.根据权利要求1～4中任一项所述的SiSiC部件，其中，所述管外区域B中的Si单质与SiC的体积比Si/SiC为20/80～40/60。
6.一种加热器具，具备权利要求1～5中任一项所述的SiSiC部件和棒状部件，
所述棒状部件插入所述长孔中。
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