CN116149148A - 用于除去光致抗蚀剂的剥离剂组合物和使用其的光致抗蚀剂的剥离方法 - Google Patents

用于除去光致抗蚀剂的剥离剂组合物和使用其的光致抗蚀剂的剥离方法 Download PDF

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Publication number
CN116149148A
CN116149148A CN202211149997.8A CN202211149997A CN116149148A CN 116149148 A CN116149148 A CN 116149148A CN 202211149997 A CN202211149997 A CN 202211149997A CN 116149148 A CN116149148 A CN 116149148A
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CN
China
Prior art keywords
stripper composition
amine compound
photoresist
removing photoresist
photoresist according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211149997.8A
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English (en)
Chinese (zh)
Inventor
孙成旼
朴泰文
宋贤宇
崔容铣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Chem Ltd
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LG Chem Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020220078924A external-priority patent/KR20230075339A/ko
Application filed by LG Chem Ltd filed Critical LG Chem Ltd
Publication of CN116149148A publication Critical patent/CN116149148A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN202211149997.8A 2021-11-22 2022-09-21 用于除去光致抗蚀剂的剥离剂组合物和使用其的光致抗蚀剂的剥离方法 Pending CN116149148A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2021-0161556 2021-11-22
KR20210161556 2021-11-22
KR1020220078924A KR20230075339A (ko) 2021-11-22 2022-06-28 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
KR10-2022-0078924 2022-06-28

Publications (1)

Publication Number Publication Date
CN116149148A true CN116149148A (zh) 2023-05-23

Family

ID=86358851

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211149997.8A Pending CN116149148A (zh) 2021-11-22 2022-09-21 用于除去光致抗蚀剂的剥离剂组合物和使用其的光致抗蚀剂的剥离方法

Country Status (3)

Country Link
JP (1) JP7306553B2 (ja)
CN (1) CN116149148A (ja)
TW (1) TWI812342B (ja)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648324A (en) * 1996-01-23 1997-07-15 Ocg Microelectronic Materials, Inc. Photoresist stripping composition
KR20060024478A (ko) * 2004-09-13 2006-03-17 주식회사 동진쎄미켐 포토레지스트 박리액 조성물
US20060116313A1 (en) * 2004-11-30 2006-06-01 Denise Geitz Compositions comprising tannic acid as corrosion inhibitor
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
TW200633046A (en) * 2005-02-14 2006-09-16 Robert J Small Semiconductor cleaning
JP5236217B2 (ja) * 2006-06-22 2013-07-17 東進セミケム株式会社 レジスト除去用組成物
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
JP5678616B2 (ja) * 2010-12-02 2015-03-04 東ソー株式会社 レジスト剥離剤及びそれを用いた剥離方法
JP6121570B2 (ja) * 2013-03-07 2017-04-26 エルジー・ケム・リミテッド フォトレジスト除去用ストリッパ組成物およびこれを用いたフォトレジストの剥離方法
KR101707155B1 (ko) * 2014-08-20 2017-02-27 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
KR101586453B1 (ko) * 2014-08-20 2016-01-21 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법

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Publication number Publication date
JP2023076384A (ja) 2023-06-01
TW202321837A (zh) 2023-06-01
TWI812342B (zh) 2023-08-11
JP7306553B2 (ja) 2023-07-11

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