CN116083852A - 一种具有新型表面结构的钼薄膜的制备方法 - Google Patents
一种具有新型表面结构的钼薄膜的制备方法 Download PDFInfo
- Publication number
- CN116083852A CN116083852A CN202211705174.9A CN202211705174A CN116083852A CN 116083852 A CN116083852 A CN 116083852A CN 202211705174 A CN202211705174 A CN 202211705174A CN 116083852 A CN116083852 A CN 116083852A
- Authority
- CN
- China
- Prior art keywords
- substrate
- molybdenum film
- surface structure
- included angle
- degrees
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 27
- 239000011733 molybdenum Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000013077 target material Substances 0.000 claims abstract description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 241000227425 Pieris rapae crucivora Species 0.000 claims abstract description 3
- 238000000861 blow drying Methods 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 3
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明涉及一种具有新型表面结构的钼薄膜的制备方法，其特征在于：（1）将普通白玻璃基底进行清洗去除表面污渍，随后吹干或烘干备用；（2）将干燥后的普通玻璃基底采用磁控溅射法进行镀膜，放置玻璃基底时将基底与法线方向呈30°~60°夹角，与靶材入射方向呈120°夹角，以金属Mo为靶材，镀制一层厚度为250‑450nm的钼薄膜。本发明优点：本发明利用磁控溅射技术，仅仅通过改变基底与磁场、电场的夹角，即可制备出具有定向排列表面的表面结构，方法简单；有效地提高了薄膜的电学性能，电阻率在1.0×10‑5‑1.5×10‑5Ω·cm，降低了制备二硫化钼的难度。
Description
技术领域
本发明属于玻璃薄膜制造技术领域，涉及一种具有新型表面结构的钼薄膜的制备方法。
背景技术
钼电极在CIGS薄膜太阳能电池上的应用已经很久，钼薄膜催化制备二硫化钼的技术也已经日趋成熟。钼薄膜在目前的磁控溅射工艺条件下只能制备出蠕虫状的杂乱无章的表面结构，杂乱无章的表面结构会不仅增加了后续制备二硫化钼薄膜的难度，而且也使得电阻率较高（最低在3×10-5Ω·cm左右）。
发明内容
本发明的目的是为了改善薄膜的电学性能以及表面形貌，提供一种具有新型表面结构的钼薄膜的制备方法。
为了实现上述目的，本发明采用的技术方案如下：
一种具有新型表面结构的钼薄膜的制备方法，其特征在于包括以下步骤：
（1）将普通白玻璃基底进行清洗去除表面污渍，随后吹干或烘干备用；
（2）将干燥后的普通玻璃基底采用磁控溅射法进行镀膜，放置玻璃基底时将基底与法线方向呈30°~60°夹角，与靶材入射方向呈120°夹角，以金属Mo为靶材，镀制一层厚度为250-450nm的钼薄膜。
进一步，所述步骤（2）中基底与法线方向呈40°~50°夹角，与靶材入射方向呈120°夹角。
进一步，所述钼薄膜的厚度为300-350nm。
进一步，所述钼薄膜的表面结构呈定向排列。
本发明的有益效果是：本发明利用磁控溅射技术，仅仅通过改变基底与磁场、电场的夹角，即可制备出具有定向排列表面的表面结构，方法简单；有效地提高了薄膜的电学性能（电阻率在1.0×10-5-1.5×10-5Ω·cm），降低了制备二硫化钼的难度。
附图说明
图1为实施例1制得的钼薄膜表面结构图；
图2为实施例2制得的钼薄膜表面结构图；
图3为基底和靶材平行放置制备钼薄膜表面结构图。
具体实施方式
一种具有新型表面结构的钼薄膜的制备方法，具体实施步骤如下：
实施例1
S1、选用1.1mm普通玻璃作为衬底，清洗衬底，去除衬底表面污渍并吹干；
S2、将清洗后的衬底置入磁控溅射镀膜设备，放入时将基片放置成与水平方向呈30°夹角，与靶材入射方向呈120°夹角，对溅射腔体抽真空，当真空度5×10-5Pa时以金属Mo为靶材，采用直流电源功率300W，通入30sccm氩气，进行预溅射，预溅射结束后，调整真空度为5×10-1Pa，进行溅射镀膜，镀制厚度300nm的钼薄膜（电阻率1.5×10-5Ω·cm）。
实施例2
S1、选用1.1mm普通玻璃作为衬底，清洗衬底，去除衬底表面污渍并吹干；
S2、将清洗后的衬底置入磁控溅射镀膜设备，放入时将基片放置成与法线方向呈60°夹角，与靶材入射方向呈120°夹角，对溅射腔体抽真空，当真空度5×10-5Pa时以金属Mo为靶材，采用直流电源功率300W，通入30sccm氩气，进行预溅射，预溅射结束后，调整真空度为5×10-1Pa,进行溅射镀膜，镀制厚度400nm，电阻率1.2×10-5Ω·cm钼薄膜。
以上所述，仅是本发明专利的较佳实施例而已，并非对本发明专利作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明专利技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明专利技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明专利技术方案的内容，依据本发明专利的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。
Claims (4)
1.一种具有新型表面结构的钼薄膜的制备方法，其特征在于包括以下步骤：
（1）将普通白玻璃基底进行清洗去除表面污渍，随后吹干或烘干备用；
（2）将干燥后的普通玻璃基底采用磁控溅射法进行镀膜，放置玻璃基底时将基底与法线方向呈30°~60°夹角，与靶材入射方向呈120°夹角，以金属Mo为靶材，镀制一层厚度为250-450nm的钼薄膜。
2.根据权利要求1所述一种具有新型表面结构的钼薄膜的制备方法，其特征在于：所述步骤（2）中基底与法线方向呈40°~50°夹角，与靶材入射方向呈120°夹角。
3.根据权利要求1所述一种具有新型表面结构的钼薄膜的制备方法，其特征在于：所述钼薄膜的厚度为300-350nm。
4.根据权利要求1-3任一项所述一种具有新型表面结构的钼薄膜的制备方法，其特征在于：所述钼薄膜的表面结构呈定向排列。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211705174.9A CN116083852A (zh) | 2022-12-29 | 2022-12-29 | 一种具有新型表面结构的钼薄膜的制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211705174.9A CN116083852A (zh) | 2022-12-29 | 2022-12-29 | 一种具有新型表面结构的钼薄膜的制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116083852A true CN116083852A (zh) | 2023-05-09 |
Family
ID=86198502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211705174.9A Pending CN116083852A (zh) | 2022-12-29 | 2022-12-29 | 一种具有新型表面结构的钼薄膜的制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116083852A (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751381A (zh) * | 2012-06-29 | 2012-10-24 | 中国科学院电工研究所 | 一种铜铟硒基薄膜太阳能电池钼电极的制备方法 |
| CN104213090A (zh) * | 2014-08-29 | 2014-12-17 | 河北工业大学 | 一种磁控溅射法制备钼掺杂氧化锌薄膜的方法 |
| CN104593742A (zh) * | 2015-01-20 | 2015-05-06 | 清华大学深圳研究生院 | 一种制备具有双轴织构的氧化物薄膜的设备和方法 |
| CN106987817A (zh) * | 2017-04-17 | 2017-07-28 | 同济大学 | 一种提高线型磁控溅射靶枪在凹形柱面基底镀膜质量的方法 |
| CN111676459A (zh) * | 2020-06-23 | 2020-09-18 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种多彩的bipv薄膜太阳能电池的制备方法 |
| CN113151782A (zh) * | 2021-04-21 | 2021-07-23 | 金堆城钼业股份有限公司 | 一种二硫化钼薄膜的制备方法 |
| CN115011925A (zh) * | 2022-05-19 | 2022-09-06 | 甘肃省科学院传感技术研究所 | 一种低维层状二硫化钼薄膜材料及其制备方法 |
-
2022
- 2022-12-29 CN CN202211705174.9A patent/CN116083852A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751381A (zh) * | 2012-06-29 | 2012-10-24 | 中国科学院电工研究所 | 一种铜铟硒基薄膜太阳能电池钼电极的制备方法 |
| CN104213090A (zh) * | 2014-08-29 | 2014-12-17 | 河北工业大学 | 一种磁控溅射法制备钼掺杂氧化锌薄膜的方法 |
| CN104593742A (zh) * | 2015-01-20 | 2015-05-06 | 清华大学深圳研究生院 | 一种制备具有双轴织构的氧化物薄膜的设备和方法 |
| CN106987817A (zh) * | 2017-04-17 | 2017-07-28 | 同济大学 | 一种提高线型磁控溅射靶枪在凹形柱面基底镀膜质量的方法 |
| CN111676459A (zh) * | 2020-06-23 | 2020-09-18 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种多彩的bipv薄膜太阳能电池的制备方法 |
| CN113151782A (zh) * | 2021-04-21 | 2021-07-23 | 金堆城钼业股份有限公司 | 一种二硫化钼薄膜的制备方法 |
| CN115011925A (zh) * | 2022-05-19 | 2022-09-06 | 甘肃省科学院传感技术研究所 | 一种低维层状二硫化钼薄膜材料及其制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108570651A (zh) | 一种多腔室卧式磁控溅射镀膜生产线及其镀膜方法 | |
| CN110819965B (zh) | 一种铝电解电容器用阳极铝箔的节能制备方法 | |
| JP4288641B2 (ja) | 化合物半導体成膜装置 | |
| CN105576135A (zh) | 大面积全固态钙钛矿介观太阳能电池的制备方法及产品 | |
| CN105161623A (zh) | 一种钙钛矿太阳能电池及其制备方法 | |
| CN102634765A (zh) | 一种镀银铝材料表面制备非晶碳涂层的方法 | |
| CN106684352A (zh) | 一种锂电用二氧化钛纳米管阵列固载球状二硫化钼负极材料的制备方法 | |
| CN110246926A (zh) | 一种制备全无机钙钛矿太阳能电池的磁控溅射方法 | |
| CN112063985B (zh) | 玻璃基材真空磁控溅射镀铜方法 | |
| CN116083852A (zh) | 一种具有新型表面结构的钼薄膜的制备方法 | |
| CN114318234A (zh) | 一种以单晶碳化硅为基底的Ti-Cu-Ni多层膜及其制备方法 | |
| CN102560384B (zh) | 在基底表面上沉积纳米点阵的方法 | |
| CN106119795A (zh) | 利用真空磁控溅射镀膜技术制备锂电池C‑Si负极涂层的方法 | |
| CN102051497B (zh) | 金银镶嵌靶材及其薄膜的制备方法 | |
| CN106854755A (zh) | 一种超亲水透明二氧化钛纳米管阵列的制备方法 | |
| CN207031542U (zh) | 一种真空镀膜设备 | |
| JPH11335815A (ja) | 透明導電膜付き基板および成膜装置 | |
| CN102751381A (zh) | 一种铜铟硒基薄膜太阳能电池钼电极的制备方法 | |
| CN113604778A (zh) | 一种应用于太阳能电池的azo靶材及其制备方法 | |
| JP2007186772A (ja) | ガスフロースパッタリング成膜方法 | |
| CN106435495B (zh) | 不锈钢薄板表面TiN-Ti复合覆层的制备方法 | |
| CN107293605A (zh) | 太阳能电池背电极和太阳能电池及其制备方法 | |
| CN109536904A (zh) | 一种掺杂TiO2阻挡层薄膜及其制备方法 | |
| CN108511328B (zh) | 一种双层钼薄膜及其制备方法、薄膜太阳能电池 | |
| CN220211949U (zh) | 一种雾化芯、雾化器及气溶胶发生装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |