CN111676459A - 一种多彩的bipv薄膜太阳能电池的制备方法 - Google Patents
一种多彩的bipv薄膜太阳能电池的制备方法 Download PDFInfo
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Abstract
本发明公开一种多彩的BIPV薄膜太阳能电池的制备方法,包括以下步骤:S1、取超白浮法玻璃作为玻璃基底,去除玻璃基底表面污物,并对玻璃基底表面进行活化;S2、采掠射角磁控溅射工艺,在玻璃基底顶面沉积透明导电层,透明导电层作为彩色功能层;彩色功能层由三层以上的薄膜构成复合膜层;S3、采用磁控溅射工艺在彩色功能层顶面沉积缓冲层;S4、采用磁控溅射工艺在缓冲层顶面沉积吸收层,吸收层为CdTe薄膜;S5、采用磁控溅射工艺在吸收层顶面沉积背接触层;S6、采用磁控溅射工艺在背接触层顶面沉积保护层,保护层为Au、Zn、Pt、Zr或Ti薄膜;得到多彩的BIPV薄膜太阳能电池;电池结构本身即可实现携带颜色,同时保障薄膜太阳能电池的整体结构及性能。
Description
技术领域
本发明涉及薄膜太阳能电池技术领域,具体是一种多彩的BIPV薄膜太阳能电池的制备方法。
背景技术
建筑光伏一体化(即BIPV:Building Integrated Photovoltaics) 是应用太阳能发电的一种新概念:在建筑维护结构外表面结合建筑材料形成光伏与建筑的结合,光伏发电提供电力。
目前,在建筑中集成绿色智能发电系统已成为各国的共识,也是建筑发展的趋势。根据《建筑节能与绿色建筑发展规划》,我国到2020年建筑超低能耗、近零能耗建筑项目达到1000万平方米以上。BIPV是解决近零能耗建筑用电用能需求的关键技术因素,随着近年来光伏产业链成本的快速降低使得光伏产业从光伏电站走向BIPV,行业由政策依赖走向无补贴时代,自发性市场需求的崛起将打开BIPV发展的广阔空间。
现阶段,大部分BIPV的安装都主要为薄膜太阳能与玻璃结合后的本色,为了安装BIPV不仅能够解决节能减排的难题,更能提升建筑的外在形象,使之更符合商业建筑美学审美,使其对提升企业的整体品牌形象更有特色,多种颜色的BIPV成为市场的需求。
但是,市场存在的彩色的BIPV均是在薄膜太阳能电池盖板内部或者外部附加单层或多层的彩色功能层、或者采用化学着色方法,明显增加了制作步骤,提高了成本,且损失电池的光电转换效率;本发明将赋予薄膜太阳能电池本身结构层具有色彩,同时保障薄膜太阳能电池的整体性能。
发明内容
本发明的目的在于提供一种多彩的BIPV薄膜太阳能电池的制备方法,该方法制备得到的薄膜太阳能电池结构本身即可实现携带颜色,并且颜色易于调节,同时保障薄膜太阳能电池的整体结构及性能。
本发明解决其技术问题所采用的技术方案是:
一种多彩的BIPV薄膜太阳能电池的制备方法,包括以下步骤:
S1、取超白浮法玻璃作为玻璃基底,去除玻璃基底表面污物,并对玻璃基底表面进行活化;
S2、采掠射角磁控溅射工艺,在玻璃基底顶面沉积透明导电层,透明导电层作为
彩色功能层;彩色功能层由三层以上的薄膜构成复合膜层;
彩色功能层包含BZO薄膜、AZO薄膜、GZO薄膜、IGZO薄膜、IZO薄膜的其中一种或两种以上;
或者彩色功能层包含CTO、ZTO、ITO薄膜的其中一种或两种以上;
彩色功能层中奇数膜层的折射率大于偶数膜层的折射率;
S3、采用磁控溅射工艺在彩色功能层顶面沉积缓冲层,缓冲层为CdS、ZnS或InS薄膜;
S4、采用磁控溅射工艺在缓冲层顶面沉积吸收层,吸收层为CdTe薄膜;
S5、采用磁控溅射工艺在吸收层顶面沉积背接触层,背接触层为Cu、Zn、Mo、Ti、Al、Ag或Au薄膜;
S6、采用磁控溅射工艺在背接触层顶面沉积保护层,保护层为Au、Zn、Pt、Zr或Ti薄膜;得到多彩的BIPV薄膜太阳能电池。
进一步的,步骤S1超白浮法玻璃的底面呈凹凸的绒面结构。
进一步的,步骤S2当彩色功能层采用BZO薄膜、AZO薄膜、GZO薄膜、IGZO薄膜、IZO薄膜时,彩色功能层的总厚度为800~1300nm;
当彩色功能层采用CTO、ZTO、ITO薄膜时,彩色功能层的总厚度为650~750nm。
4.根据权利要求3所述的一种多彩的BIPV薄膜太阳能电池的制备方法,其特征在于,步骤S2所述掠射角磁控溅射工艺采用入射粒子流倾斜角度10°~80°,制备出纳米柱倾斜角为5°~55°。
5.根据权利要求1所述的一种多彩的BIPV薄膜太阳能电池的制备方法,其特征在于,所述缓冲层的厚度为20~130nm、吸收层的厚度为1300~2800nm、背接触层的厚度为3~40nm、保护层的厚度为5~50nm。
本发明的有益效果是:
一、采用超白浮法玻璃基底,玻璃基底底面带有凹凸的绒面结构,有利于电池表面的陷光作用,增加了太阳光的利用率,同时由于光的干涉合折射,玻璃凹凸不平的微结构与彩色功能层和CdTe电池功能层结合后,使得CdTe电池可以呈现多种彩色外观。
二、彩色功能层即透明导电层可采用同种薄膜或多种薄膜结构,可根据薄膜不同材料、不同掠射角度、不同厚度、不同致密度来调整透明导电层的折射率,进而实现CdTe电池可以呈现多种彩色外观。
三、本电池结构本身即可实现携带颜色,并且颜色易于调节,同时保障薄膜太阳能电池的整体结构及性能。
四、彩色功能层即透明导电层在室温下获得,而之前的工艺均需加热至600℃附近,本发明可以有效节约成本。
附图说明
下面结合附图和实施例对本发明进一步说明:
图1是本发明制备得到的彩的BIPV薄膜太阳能电池的结构示意图;
图2是本发明彩色功能层中单层的断面形貌图。
具体实施方式
实施例一
如图1所示,本发明提供一种多彩的BIPV薄膜太阳能电池的制备方法,包括以下步骤:
S1、取超白浮法玻璃作为玻璃基底1,采用低能离子源对玻璃基底进行预处理,以清除玻璃基底表面吸附的气体、污染物以及对表面进行活化,提高玻璃基底的表面能,降低涂层和玻璃基底之间的浸润角;
具体为:采用离子源溅射法,通入Ar气流量为40sccm,轰击玻璃基底1,工作压强为0.8Pa,功率为30W,时间20min;
S2、采掠射角磁控溅射工艺,在玻璃基底1顶面沉积透明导电层,透明导电层作为彩色功能层2;彩色功能层2由三层以上的薄膜构成复合膜层;
彩色功能层包含BZO薄膜、AZO薄膜、GZO薄膜、IGZO薄膜、IZO薄膜的其中一种或两种以上;
彩色功能层中奇数膜层的折射率大于偶数膜层的折射率;
本实施例采用掠射角磁控溅射法,GZO靶(Ga2O3:ZnO=0.5%~1.5%:99.5%~98.5%),通入Ar气流量为40sccm,在玻璃基底1的顶面沉积第一功能层21;首先,采用工作压强为0.3Pa~0.5Pa,功率为150~250W,采用入射粒子流倾斜角度80°,沉积第一功能层21的厚度为400nm,得到的GZO薄膜纳米柱倾斜角度为53.2°,形貌如图2;然后,采用工作压强为0.5Pa~0.8Pa,功率为100~200W,采用入射粒子流倾斜角度20°,沉积第一功能层22厚度为100nm;之后,采用工作压强为0.3Pa~0.5Pa,功率为150~250W,采用入射粒子流倾斜角度80°,沉积第三功能层23厚度为400nm;
S3、采用磁控溅射工艺在彩色功能层顶面沉积缓冲层3,缓冲层3为CdS、ZnS或InS薄膜;
具体为:采用射频磁控溅射法,InS靶,通入Ar气流量为20sccm,在彩色功能层2基础上沉积InS薄膜,工作压强为0.5Pa,功率为80W,InS薄膜厚度为20nm;
S4、采用磁控溅射工艺在缓冲层3顶面沉积吸收层4,吸收层4为CdTe薄膜;
具体为:采用直流磁控溅射法,CdTe靶,通入Ar气流量为30sccm,在缓冲层3基础上沉积CdTe薄膜,工作压强为0.5Pa,功率为180W,CdTe薄膜厚度为1600nm;
S5、采用磁控溅射工艺在吸收层4顶面沉积背接触层5,背接触层5为Cu、Zn、Mo、Ti、Al、Ag或Au薄膜;
具体为:采用射频磁控溅射法,Zn靶,通入Ar气流量为30sccm,在吸收层4基础上沉积Zn薄膜,工作压强为0.45Pa,功率为40W,Zn薄膜厚度为8nm;
S6、采用磁控溅射工艺在背接触层5顶面沉积保护层6,保护层6为Au、Zn、Pt、Zr或Ti薄膜;
具体为:采用磁控溅射法,Zr靶,通入Ar气流量为30sccm,在背接触层5基础上沉积Zr薄膜,工作压强为0.6Pa,功率为50W,Zr薄膜厚度为15nm;
最终得到多彩的BIPV薄膜太阳能电池。
实施例二
如图1所示,本发明提供一种多彩的BIPV薄膜太阳能电池的制备方法,包括以下步骤:
S1、取超白浮法玻璃作为玻璃基底1,采用低能离子源对玻璃基底进行预处理,以清除玻璃基底表面吸附的气体、污染物以及对表面进行活化,提高玻璃基底的表面能,降低涂层和玻璃基底之间的浸润角;
具体为:采用离子源溅射法,通入Ar气流量为50sccm,轰击玻璃基底1,工作压强为0.9Pa,功率为40W,时间15min;
S2、采掠射角磁控溅射工艺,在玻璃基底1顶面沉积透明导电层,透明导电层作为彩色功能层2;彩色功能层2由三层以上的薄膜构成复合膜层;
彩色功能层包含BZO薄膜、AZO薄膜、GZO薄膜、IGZO薄膜、IZO薄膜的其中一种或两种以上;
彩色功能层中奇数膜层的折射率大于偶数膜层的折射率;
本实施例采用掠射角磁控溅射法,AZO靶(Al2O3:ZnO=1.5%~3%:98.5%~97%),通入Ar气流量为40sccm,在玻璃基底1的平整面上沉积第一功能层21;首先,采用工作压强为0.2Pa~0.4Pa,功率为180~280W,采用入射粒子流倾斜角度70°,沉积第一功能层21厚度为400nm,AZO薄膜纳米柱倾斜角度为36.5°;然后,采用工作压强为0.6Pa~0.9Pa,功率为80~180W,采用入射粒子流倾斜角度20°,沉积第二功能层22厚度为50nm;之后,采用工作压强为0.2Pa~0.4Pa,功率为180~280W,采用入射粒子流倾斜角度70°,沉积第三功能层23厚度为400nm;采用工作压强为0.6Pa~0.9Pa,功率为80~180W,采用入射粒子流倾斜角度20°,沉积第四功能层24厚度为50nm;之后,采用工作压强为0.2Pa~0.4Pa,功率为180~280W,采用入射粒子流倾斜角度20°,沉积第五功能层25厚度为400nm;
S3、采用磁控溅射工艺在彩色功能层顶面沉积缓冲层3,缓冲层3为CdS、ZnS或InS薄膜;
具体为:采用射频磁控溅射法,ZnS靶,通入Ar气流量为20sccm,在彩色功能层2基础上沉积ZnS薄膜,工作压强为0.4Pa,功率为120W,InS薄膜厚度为30nm;;
S4、采用磁控溅射工艺在缓冲层3顶面沉积吸收层4,吸收层4为CdTe薄膜;
具体为:采用直流磁控溅射法,CdTe靶,通入Ar气流量为40sccm,在缓冲层3基础上沉积CdTe薄膜,工作压强为0.45Pa,功率为240W,CdTe薄膜厚度为1700nm;
S5、采用磁控溅射工艺在吸收层4顶面沉积背接触层5,背接触层5为Cu、Zn、Mo、Ti、Al、Ag或Au薄膜;
具体为:采用射频磁控溅射法,Ti靶,通入Ar气流量为30sccm,在吸收层4基础上沉积Ti薄膜,工作压强为0.35Pa,功率为35W,Ti薄膜厚度为16nm;
S6、采用磁控溅射工艺在背接触层5顶面沉积保护层6,保护层6为Au、Zn、Pt、Zr或Ti薄膜;
具体为:采用磁控溅射法,Zn靶,通入Ar气流量为30sccm,在背接触层5基础上沉积Zn薄膜,工作压强为0.4Pa,功率为35W,Zn薄膜厚度为20nm;
最终得到多彩的BIPV薄膜太阳能电池。
实施例三
如图1所示,本发明提供一种多彩的BIPV薄膜太阳能电池的制备方法,包括以下步骤:
S1、取超白浮法玻璃作为玻璃基底1,采用低能离子源对玻璃基底进行预处理,以清除玻璃基底表面吸附的气体、污染物以及对表面进行活化,提高玻璃基底的表面能,降低涂层和玻璃基底之间的浸润角;
具体为:采用离子源溅射法,通入Ar气流量为40sccm,轰击玻璃基底1,工作压强为0.7Pa,功率为20W,时间30min;
S2、采掠射角磁控溅射工艺,在玻璃基底1顶面沉积透明导电层,透明导电层作为彩色功能层2;彩色功能层2由三层以上的薄膜构成复合膜层;
彩色功能层包含BZO薄膜、AZO薄膜、GZO薄膜、IGZO薄膜、IZO薄膜的其中一种或两种以上;
彩色功能层中奇数膜层的折射率大于偶数膜层的折射率;
本实施例采用掠射角磁控溅射法,GZO靶(Ga2O3:ZnO=0.5%~1.5%:99.5%~98.5%)及AZO靶(Al2O3:ZnO=1.5%~3%:98.5%~97%),Ar气流量为40sccm,在玻璃基底1的平整面上沉积GZO/AZO/GZO/AZO/GZO薄膜,首先,采用工作压强为0.2Pa~0.5Pa,功率为200~300W,采用入射粒子流倾斜角度80°,沉积第一功能层21厚度为400nm,GZO薄膜纳米柱倾斜角度为50.5°~55°;然后,采用工作压强为0.6Pa~0.9Pa,功率为80~180W,采用入射粒子流倾斜角度30°,沉积第二功能层22厚度为100nm;然后,采用0.2Pa~0.5Pa,功率为200~300W,采用入射粒子流倾斜角度80°,沉积第三功能层23厚度为400nm;之后,采用工作压强为0.6Pa~0.9Pa,功率为80~180W,采用入射粒子流倾斜角度20°,沉积第四功能层24厚度为50nm;之后,采用工作压强为0.2Pa~0.4Pa,功率为180~280W,采用入射粒子流倾斜角度80°,沉积第五功能层25厚度为350nm;
S3、采用磁控溅射工艺在彩色功能层顶面沉积缓冲层3,缓冲层3为CdS、ZnS或InS薄膜;
具体为:采用射频磁控溅射法,InS靶,通入Ar气流量为20sccm,在彩色功能层2基础上沉积InS薄膜,工作压强为0.3Pa,功率为60W,InS薄膜厚度为35nm;
S4、采用磁控溅射工艺在缓冲层3顶面沉积吸收层4,吸收层4为CdTe薄膜;
具体为:采用直流磁控溅射法,CdTe靶,通入Ar气流量为30sccm,在缓冲层3基础上沉积CdTe薄膜,工作压强为0.4Pa,功率为160W,CdTe薄膜厚度为1600nm;
S5、采用磁控溅射工艺在吸收层4顶面沉积背接触层5,背接触层5为Cu、Zn、Mo、Ti、Al、Ag或Au薄膜;
具体为:采用射频磁控溅射法,Zn靶,通入Ar气流量为30sccm,在吸收层4基础上沉积Zn薄膜,工作压强为0.45Pa,功率为40W,Zn薄膜厚度为8nm;
S6、采用磁控溅射工艺在背接触层5顶面沉积保护层6,保护层6为Au、Zn、Pt、Zr或Ti薄膜;
具体为:采用磁控溅射法,Zr靶,通入Ar气流量为30sccm,在背接触层5基础上沉积Zr薄膜,工作压强为0.6Pa,功率为50W,Zr薄膜厚度为15nm;
最终得到多彩的BIPV薄膜太阳能电池。
实施例四
如图1所示,本发明提供一种多彩的BIPV薄膜太阳能电池的制备方法,包括以下步骤:
S1、取超白浮法玻璃作为玻璃基底1,采用低能离子源对玻璃基底进行预处理,以清除玻璃基底表面吸附的气体、污染物以及对表面进行活化,提高玻璃基底的表面能,降低涂层和玻璃基底之间的浸润角;
具体为:采用离子源溅射法,通入Ar气流量为40sccm,轰击玻璃基底1,工作压强为0.7Pa,功率为20W,时间30min;
S2、采掠射角磁控溅射工艺,在玻璃基底1顶面沉积透明导电层,透明导电层作为彩色功能层2;彩色功能层2由三层以上的薄膜构成复合膜层;
彩色功能层包含BZO薄膜、AZO薄膜、GZO薄膜、IGZO薄膜、IZO薄膜的其中一种或两种以上;
或者彩色功能层包含CTO、ZTO、ITO薄膜的其中一种或两种以上;
彩色功能层中奇数膜层的折射率大于偶数膜层的折射率;
本实施例采用掠射角磁控溅射法,CTO靶(CdO:SnO2=0.5%~3.5%:99.5%~96.5%)、ZTO靶(ZnO:SnO2=0.5%~3.5%:99.5%~96.5%)或者ITO靶(In2O2:SnO2=99.5%~86.5%:0.5%~13.5%),Ar气流量为40sccm,在玻璃基底1的平整面上沉积CTO/ZTO/CTO/ZTO/CTO薄膜2,首先,采用工作压强为0.2Pa~0.5Pa,功率为200~300W,采用入射粒子流倾斜角度80°,沉积第一功能层21厚度为300nm,CTO薄膜倾斜角度为45.5°~50°;然后,采用工作压强为0.6Pa~0.9Pa,功率为80~180W,采用入射粒子流倾斜角度30°,沉积第二功能层22厚度为20nm;然后,采用0.2Pa~0.5Pa,功率为200~300W,采用入射粒子流倾斜角度80°,沉积第三功能层23厚度为200nm;之后,采用工作压强为0.6Pa~0.9Pa,功率为80~180W,采用入射粒子流倾斜角度20°,沉积第四功能层24厚度为20nm;之后,采用工作压强为0.2Pa~0.4Pa,功率为180~280W,采用入射粒子流倾斜角度80°,沉积第五功能层25厚度为200nm;
S3、采用磁控溅射工艺在彩色功能层顶面沉积缓冲层3,缓冲层3为CdS、ZnS或InS薄膜;
具体为:采用射频磁控溅射法,InS靶,通入Ar气流量为20sccm,在彩色功能层2基础上沉积InS薄膜,工作压强为0.3Pa,功率为60W,InS薄膜厚度为35nm;
S4、采用磁控溅射工艺在缓冲层3顶面沉积吸收层4,吸收层4为CdTe薄膜;
具体为:采用直流磁控溅射法,CdTe靶,通入Ar气流量为30sccm,在缓冲层3基础上沉积CdTe薄膜,工作压强为0.4Pa,功率为160W,CdTe薄膜厚度为1600nm;
S5、采用磁控溅射工艺在吸收层4顶面沉积背接触层5,背接触层5为Cu、Zn、Mo、Ti、Al、Ag或Au薄膜;
具体为:采用射频磁控溅射法,Zn靶,通入Ar气流量为30sccm,在吸收层4基础上沉积Zn薄膜,工作压强为0.45Pa,功率为40W,Zn薄膜厚度为8nm;
S6、采用磁控溅射工艺在背接触层5顶面沉积保护层6,保护层6为Au、Zn、Pt、Zr或Ti薄膜;
具体为:采用磁控溅射法,Zr靶,通入Ar气流量为30sccm,在背接触层5基础上沉积Zr薄膜,工作压强为0.6Pa,功率为50W,Zr薄膜厚度为15nm;
最终得到多彩的BIPV薄膜太阳能电池。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制;任何熟悉本领域的技术人员,在不脱离本发明技术方案范围情况下,都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰,均仍属于本发明技术方案保护的范围内。
Claims (5)
1.一种多彩的BIPV薄膜太阳能电池的制备方法,其特征在于,包括以下步骤:
S1、取超白浮法玻璃作为玻璃基底,去除玻璃基底表面污物,并对玻璃基底表面进行活化;
S2、采掠射角磁控溅射工艺,在玻璃基底顶面沉积透明导电层,透明导电层作为
彩色功能层;彩色功能层由三层以上的薄膜构成复合膜层;
彩色功能层包含BZO薄膜、AZO薄膜、GZO薄膜、IGZO薄膜、IZO薄膜的其中一种或两种以上;
或者彩色功能层包含CTO、ZTO、ITO薄膜的其中一种或两种以上;
彩色功能层中奇数膜层的折射率大于偶数膜层的折射率;
S3、采用磁控溅射工艺在彩色功能层顶面沉积缓冲层,缓冲层为CdS、ZnS或InS薄膜;
S4、采用磁控溅射工艺在缓冲层顶面沉积吸收层,吸收层为CdTe薄膜;
S5、采用磁控溅射工艺在吸收层顶面沉积背接触层,背接触层为Cu、Zn、Mo、Ti、Al、Ag或Au薄膜;
S6、采用磁控溅射工艺在背接触层顶面沉积保护层,保护层为Au、Zn、Pt、Zr或Ti薄膜;得到多彩的BIPV薄膜太阳能电池。
2.根据权利要求1所述的一种多彩的BIPV薄膜太阳能电池的制备方法,其特征在于,步骤S1超白浮法玻璃的底面呈凹凸的绒面结构。
3.根据权利要求1或2所述的一种多彩的BIPV薄膜太阳能电池的制备方法,其特征在于,步骤S2当彩色功能层采用BZO薄膜、AZO薄膜、GZO薄膜、IGZO薄膜、IZO薄膜时,彩色功能层的总厚度为800~1300nm;
当彩色功能层采用CTO、ZTO、ITO薄膜时,彩色功能层的总厚度为650~750nm。
4.根据权利要求3所述的一种多彩的BIPV薄膜太阳能电池的制备方法,其特征在于,步骤S2所述掠射角磁控溅射工艺采用入射粒子流倾斜角度10°~80°,制备出纳米柱倾斜角为5°~55°。
5.根据权利要求1所述的一种多彩的BIPV薄膜太阳能电池的制备方法,其特征在于,所述缓冲层的厚度为20~130nm、吸收层的厚度为1300~2800nm、背接触层的厚度为3~40nm、保护层的厚度为5~50nm。
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