CN1160761C - 样品加工系统 - Google Patents

样品加工系统 Download PDF

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Publication number
CN1160761C
CN1160761C CNB991234332A CN99123433A CN1160761C CN 1160761 C CN1160761 C CN 1160761C CN B991234332 A CNB991234332 A CN B991234332A CN 99123433 A CN99123433 A CN 99123433A CN 1160761 C CN1160761 C CN 1160761C
Authority
CN
China
Prior art keywords
substrate
sheet
sample
separation
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB991234332A
Other languages
English (en)
Chinese (zh)
Other versions
CN1258091A (zh
Inventor
柳田一隆
明
近江和明
文
坂口清文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN1258091A publication Critical patent/CN1258091A/zh
Application granted granted Critical
Publication of CN1160761C publication Critical patent/CN1160761C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
CNB991234332A 1998-11-06 1999-11-05 样品加工系统 Expired - Fee Related CN1160761C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP316575/1998 1998-11-06
JP31657598A JP4343295B2 (ja) 1998-11-06 1998-11-06 試料の処理システム

Publications (2)

Publication Number Publication Date
CN1258091A CN1258091A (zh) 2000-06-28
CN1160761C true CN1160761C (zh) 2004-08-04

Family

ID=18078631

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB991234332A Expired - Fee Related CN1160761C (zh) 1998-11-06 1999-11-05 样品加工系统

Country Status (5)

Country Link
EP (1) EP0999578A3 (enExample)
JP (1) JP4343295B2 (enExample)
KR (1) KR100444262B1 (enExample)
CN (1) CN1160761C (enExample)
TW (1) TW459299B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0989593A3 (en) * 1998-09-25 2002-01-02 Canon Kabushiki Kaisha Substrate separating apparatus and method, and substrate manufacturing method
US6672358B2 (en) 1998-11-06 2004-01-06 Canon Kabushiki Kaisha Sample processing system
JP2000150836A (ja) 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
TW484184B (en) 1998-11-06 2002-04-21 Canon Kk Sample separating apparatus and method, and substrate manufacturing method
DE10108369A1 (de) * 2001-02-21 2002-08-29 B L E Lab Equipment Gmbh Verfahren und Vorrichtung zum Ablösen eines Halbleiterwafers von einem Träger
JP2002353081A (ja) 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び分離方法
JP2002353423A (ja) 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び処理方法
JP4740414B2 (ja) * 2007-04-24 2011-08-03 東京エレクトロン株式会社 基板搬送装置
US8443863B2 (en) * 2008-10-23 2013-05-21 Corning Incorporated High temperature sheet handling system and methods
JP2011047515A (ja) * 2009-07-28 2011-03-10 Canon Anelva Corp 駆動装置及び真空処理装置
JP5538282B2 (ja) * 2010-08-23 2014-07-02 東京エレクトロン株式会社 接合装置、接合方法、プログラム及びコンピュータ記憶媒体
JP5374462B2 (ja) * 2010-08-23 2013-12-25 東京エレクトロン株式会社 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP6404828B2 (ja) * 2013-11-25 2018-10-17 リソテック ジャパン株式会社 小型回転アームを有する処理室および小型製造装置
JP6612648B2 (ja) * 2016-02-17 2019-11-27 東京応化工業株式会社 支持体分離装置及び支持体分離方法
EP3499556B1 (en) * 2016-08-09 2021-04-07 Kondoh Industries, Ltd. Semiconductor manufacturing apparatus
DE102023122888B4 (de) * 2023-08-25 2025-04-24 Leica Biosystems Nussloch Gmbh Anordnung mit Eindeckautomat und Vorratsbehälter für Eindeckmedium oder Reinigungsbehälter

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292393A (en) * 1986-12-19 1994-03-08 Applied Materials, Inc. Multichamber integrated process system
JPH06268051A (ja) * 1993-03-10 1994-09-22 Mitsubishi Electric Corp ウエハ剥し装置
US5934856A (en) * 1994-05-23 1999-08-10 Tokyo Electron Limited Multi-chamber treatment system
JP3250722B2 (ja) * 1995-12-12 2002-01-28 キヤノン株式会社 Ｓｏｉ基板の製造方法および製造装置
US5928389A (en) * 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
SG55413A1 (en) * 1996-11-15 1998-12-21 Method Of Manufacturing Semico Method of manufacturing semiconductor article
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US6382292B1 (en) * 1997-03-27 2002-05-07 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
JPH115064A (ja) * 1997-06-16 1999-01-12 Canon Inc 試料の分離装置及びその方法並びに基板の製造方法
US6321134B1 (en) * 1997-07-29 2001-11-20 Silicon Genesis Corporation Clustertool system software using plasma immersion ion implantation
KR19990049122A (ko) * 1997-12-11 1999-07-05 오상수 쇽업소버의 충격완화장치

Also Published As

Publication number Publication date
EP0999578A2 (en) 2000-05-10
CN1258091A (zh) 2000-06-28
JP2000150610A (ja) 2000-05-30
TW459299B (en) 2001-10-11
KR20000035284A (ko) 2000-06-26
JP4343295B2 (ja) 2009-10-14
KR100444262B1 (ko) 2004-08-11
EP0999578A3 (en) 2005-04-13

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20040804

Termination date: 20141105

EXPY Termination of patent right or utility model