CN116075943A - 摄像装置及电子设备 - Google Patents
摄像装置及电子设备 Download PDFInfo
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- CN116075943A CN116075943A CN202180061807.4A CN202180061807A CN116075943A CN 116075943 A CN116075943 A CN 116075943A CN 202180061807 A CN202180061807 A CN 202180061807A CN 116075943 A CN116075943 A CN 116075943A
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Images
Classifications
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- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
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JP2020-160663 | 2020-09-25 | ||
JP2020160663 | 2020-09-25 | ||
PCT/IB2021/058290 WO2022064317A1 (ja) | 2020-09-25 | 2021-09-13 | 撮像装置および電子機器 |
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CN116075943A true CN116075943A (zh) | 2023-05-05 |
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CN202180061807.4A Pending CN116075943A (zh) | 2020-09-25 | 2021-09-13 | 摄像装置及电子设备 |
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US (1) | US20230396899A1 (ja) |
JP (1) | JPWO2022064317A1 (ja) |
KR (1) | KR20230074476A (ja) |
CN (1) | CN116075943A (ja) |
TW (1) | TW202220227A (ja) |
WO (1) | WO2022064317A1 (ja) |
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TWI429066B (zh) * | 2005-06-02 | 2014-03-01 | Sony Corp | Semiconductor image sensor module and manufacturing method thereof |
KR101707159B1 (ko) | 2009-11-06 | 2017-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWI595637B (zh) * | 2012-09-28 | 2017-08-11 | Sony Corp | 半導體裝置及電子機器 |
JP6758124B2 (ja) * | 2016-08-29 | 2020-09-23 | 富士通セミコンダクターメモリソリューション株式会社 | 3次元積層チェーン型メモリ装置の製造方法 |
JP2018117102A (ja) * | 2017-01-20 | 2018-07-26 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
JP2020123612A (ja) * | 2019-01-29 | 2020-08-13 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法、半導体装置の製造装置 |
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2021
- 2021-09-13 KR KR1020237008317A patent/KR20230074476A/ko unknown
- 2021-09-13 WO PCT/IB2021/058290 patent/WO2022064317A1/ja active Application Filing
- 2021-09-13 US US18/024,084 patent/US20230396899A1/en active Pending
- 2021-09-13 JP JP2022551445A patent/JPWO2022064317A1/ja active Pending
- 2021-09-13 CN CN202180061807.4A patent/CN116075943A/zh active Pending
- 2021-09-14 TW TW110134194A patent/TW202220227A/zh unknown
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TW202220227A (zh) | 2022-05-16 |
US20230396899A1 (en) | 2023-12-07 |
WO2022064317A1 (ja) | 2022-03-31 |
JPWO2022064317A1 (ja) | 2022-03-31 |
KR20230074476A (ko) | 2023-05-30 |
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