CN115812254A - 一种半导体器件及其制造方法 - Google Patents
一种半导体器件及其制造方法 Download PDFInfo
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- CN115812254A CN115812254A CN202080102849.3A CN202080102849A CN115812254A CN 115812254 A CN115812254 A CN 115812254A CN 202080102849 A CN202080102849 A CN 202080102849A CN 115812254 A CN115812254 A CN 115812254A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title abstract description 27
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 405
- 239000010432 diamond Substances 0.000 claims abstract description 405
- 239000000758 substrate Substances 0.000 claims abstract description 256
- 239000000463 material Substances 0.000 claims description 132
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 57
- 229910002601 GaN Inorganic materials 0.000 claims description 56
- 238000005530 etching Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 49
- 230000004888 barrier function Effects 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 51
- 230000000149 penetrating effect Effects 0.000 abstract description 21
- 230000005533 two-dimensional electron gas Effects 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Recrystallisation Techniques (AREA)
Abstract
本申请实施例公开了一种半导体器件及其制造方法，半导体器件可以包括衬底，以及位于衬底上的外延层和电极，其中衬底中具有纵向贯穿衬底的金刚石结构，金刚石结构在纵向上可以分为第一金刚石部分和第一金刚石部分下方的第二金刚石部分，第一金刚石部分和第二金刚石部分的横向尺寸不同，由于金刚石结构的导热性能好，贯穿衬底的金刚石结构可以构成纵向的导热通道，提高半导体器件的散热性能，利于半导体器件的高功率性能的有效发挥。此外，第一金刚石部分和第二金刚石部分的横向尺寸不同，则利于控制第一金刚石部分和第二金刚石部分的结构，同时可以兼顾散热性能和外延层之间的晶格匹配，利于得到更高质量的外延层，利于得到高性能的半导体器件。
Description
PCT国内申请，说明书已公开。
Claims (24)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/125328 WO2022088055A1 (zh) | 2020-10-30 | 2020-10-30 | 一种半导体器件及其制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115812254A true CN115812254A (zh) | 2023-03-17 |
Family
ID=81381596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080102849.3A Pending CN115812254A (zh) | 2020-10-30 | 2020-10-30 | 一种半导体器件及其制造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230268243A1 (zh) |
| EP (1) | EP4213184A4 (zh) |
| JP (1) | JP2023547925A (zh) |
| CN (1) | CN115812254A (zh) |
| WO (1) | WO2022088055A1 (zh) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8575657B2 (en) * | 2012-03-20 | 2013-11-05 | Northrop Grumman Systems Corporation | Direct growth of diamond in backside vias for GaN HEMT devices |
| US9685513B2 (en) * | 2012-10-24 | 2017-06-20 | The United States Of America, As Represented By The Secretary Of The Navy | Semiconductor structure or device integrated with diamond |
| US9196703B2 (en) * | 2013-08-22 | 2015-11-24 | Northrop Grumman Systems Corporation | Selective deposition of diamond in thermal vias |
| US9893058B2 (en) * | 2015-09-17 | 2018-02-13 | Semiconductor Components Industries, Llc | Method of manufacturing a semiconductor device having reduced on-state resistance and structure |
| WO2018004565A1 (en) * | 2016-06-29 | 2018-01-04 | Intel Corporation | Techniques for forming iii-n semiconductor devices with integrated diamond heat spreader |
| JP6759885B2 (ja) * | 2016-09-06 | 2020-09-23 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| CN110223918B (zh) * | 2019-04-23 | 2021-01-15 | 西安电子科技大学 | 一种孔径式复合衬底氮化镓器件及其制备方法 |
| CN111211161A (zh) * | 2020-01-15 | 2020-05-29 | 中山大学 | 一种双向散热的纵向氮化镓功率晶体管及其制备方法 |
-
2020
- 2020-10-30 EP EP20959217.9A patent/EP4213184A4/en active Pending
- 2020-10-30 CN CN202080102849.3A patent/CN115812254A/zh active Pending
- 2020-10-30 WO PCT/CN2020/125328 patent/WO2022088055A1/zh active Application Filing
- 2020-10-30 JP JP2023526332A patent/JP2023547925A/ja active Pending
-
2023
- 2023-05-01 US US18/310,071 patent/US20230268243A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP4213184A1 (en) | 2023-07-19 |
| WO2022088055A1 (zh) | 2022-05-05 |
| JP2023547925A (ja) | 2023-11-14 |
| US20230268243A1 (en) | 2023-08-24 |
| EP4213184A4 (en) | 2023-11-08 |
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