CN115699268A - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN115699268A
CN115699268A CN202080101478.7A CN202080101478A CN115699268A CN 115699268 A CN115699268 A CN 115699268A CN 202080101478 A CN202080101478 A CN 202080101478A CN 115699268 A CN115699268 A CN 115699268A
Authority
CN
China
Prior art keywords
diffusion barrier
wiring
alloy
metal
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080101478.7A
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English (en)
Chinese (zh)
Inventor
小池淳一
矢作政隆
山田裕贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
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Tohoku University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC filed Critical Tohoku University NUC
Publication of CN115699268A publication Critical patent/CN115699268A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202080101478.7A 2020-06-04 2020-06-04 半导体器件 Pending CN115699268A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/022202 WO2021245893A1 (ja) 2020-06-04 2020-06-04 半導体デバイス

Publications (1)

Publication Number Publication Date
CN115699268A true CN115699268A (zh) 2023-02-03

Family

ID=78830718

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080101478.7A Pending CN115699268A (zh) 2020-06-04 2020-06-04 半导体器件

Country Status (6)

Country Link
US (1) US12444686B2 (https=)
JP (1) JP7525186B2 (https=)
KR (1) KR102865111B1 (https=)
CN (1) CN115699268A (https=)
TW (1) TWI795789B (https=)
WO (1) WO2021245893A1 (https=)

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3062464B2 (ja) * 1997-11-14 2000-07-10 松下電子工業株式会社 半導体装置
JP3562628B2 (ja) 1999-06-24 2004-09-08 日本電気株式会社 拡散バリア膜、多層配線構造、およびそれらの製造方法
US8696875B2 (en) 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6833058B1 (en) * 2000-10-24 2004-12-21 Honeywell International Inc. Titanium-based and zirconium-based mixed materials and sputtering targets
CN101847598B (zh) 2001-11-14 2012-06-20 应用材料有限公司 用于溅射和再溅射的自离子化及电感耦合等离子体
AU2003266560A1 (en) * 2002-12-09 2004-06-30 Yoshihiro Hayashi Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device
CN1957487A (zh) * 2004-01-06 2007-05-02 Cymbet公司 具有一个或者更多个可限定层的层式阻挡物结构和方法
KR100761467B1 (ko) 2006-06-28 2007-09-27 삼성전자주식회사 금속배선 및 그 형성 방법
JP5016286B2 (ja) 2006-10-12 2012-09-05 ローム株式会社 半導体装置および半導体装置の製造方法
JP2008053753A (ja) 2007-11-08 2008-03-06 Toshiba Corp 半導体装置の製造方法
JP2012169480A (ja) 2011-02-15 2012-09-06 Panasonic Corp 半導体装置及びその製造方法
US9735123B2 (en) * 2014-03-13 2017-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and manufacturing method
WO2018063815A1 (en) 2016-10-02 2018-04-05 Applied Materials, Inc. Doped selective metal caps to improve copper electromigration with ruthenium liner
US10510657B2 (en) * 2017-09-26 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with interconnecting structure and method for manufacturing the same
US10796995B2 (en) 2017-11-29 2020-10-06 Tohoku University Semiconductor devices including a first cobalt alloy in a first barrier layer and a second cobalt alloy in a second barrier layer
US11043373B2 (en) * 2018-07-31 2021-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect system with improved low-k dielectrics
US11158538B2 (en) * 2020-02-04 2021-10-26 International Business Machines Corporation Interconnect structures with cobalt-infused ruthenium liner and a cobalt cap

Also Published As

Publication number Publication date
WO2021245893A1 (ja) 2021-12-09
US20230154851A1 (en) 2023-05-18
TWI795789B (zh) 2023-03-11
US12444686B2 (en) 2025-10-14
JPWO2021245893A1 (https=) 2021-12-09
TW202147938A (zh) 2021-12-16
KR102865111B1 (ko) 2025-09-25
KR20230020995A (ko) 2023-02-13
JP7525186B2 (ja) 2024-07-30

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