JPWO2021245893A1 - - Google Patents
Info
- Publication number
- JPWO2021245893A1 JPWO2021245893A1 JP2022528359A JP2022528359A JPWO2021245893A1 JP WO2021245893 A1 JPWO2021245893 A1 JP WO2021245893A1 JP 2022528359 A JP2022528359 A JP 2022528359A JP 2022528359 A JP2022528359 A JP 2022528359A JP WO2021245893 A1 JPWO2021245893 A1 JP WO2021245893A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/44—Physical vapour deposition [PVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/425—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/435—Cross-sectional shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
- H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/022202 WO2021245893A1 (ja) | 2020-06-04 | 2020-06-04 | 半導体デバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021245893A1 true JPWO2021245893A1 (https=) | 2021-12-09 |
| JPWO2021245893A5 JPWO2021245893A5 (https=) | 2023-02-17 |
| JP7525186B2 JP7525186B2 (ja) | 2024-07-30 |
Family
ID=78830718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022528359A Active JP7525186B2 (ja) | 2020-06-04 | 2020-06-04 | 半導体デバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12444686B2 (https=) |
| JP (1) | JP7525186B2 (https=) |
| KR (1) | KR102865111B1 (https=) |
| CN (1) | CN115699268A (https=) |
| TW (1) | TWI795789B (https=) |
| WO (1) | WO2021245893A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11145141A (ja) * | 1997-11-14 | 1999-05-28 | Matsushita Electron Corp | 半導体装置 |
| JP2001007204A (ja) * | 1999-06-24 | 2001-01-12 | Nec Corp | 多層配線の構造及びその製造方法 |
| JP2008053753A (ja) * | 2007-11-08 | 2008-03-06 | Toshiba Corp | 半導体装置の製造方法 |
| JP2008098424A (ja) * | 2006-10-12 | 2008-04-24 | Rohm Co Ltd | 半導体装置および半導体装置の製造方法 |
| JP2012169480A (ja) * | 2011-02-15 | 2012-09-06 | Panasonic Corp | 半導体装置及びその製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8696875B2 (en) | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
| US6833058B1 (en) * | 2000-10-24 | 2004-12-21 | Honeywell International Inc. | Titanium-based and zirconium-based mixed materials and sputtering targets |
| CN101847598B (zh) | 2001-11-14 | 2012-06-20 | 应用材料有限公司 | 用于溅射和再溅射的自离子化及电感耦合等离子体 |
| JP4591084B2 (ja) | 2002-12-09 | 2010-12-01 | 日本電気株式会社 | 配線用銅合金、半導体装置及び半導体装置の製造方法 |
| CN1957487A (zh) * | 2004-01-06 | 2007-05-02 | Cymbet公司 | 具有一个或者更多个可限定层的层式阻挡物结构和方法 |
| KR100761467B1 (ko) * | 2006-06-28 | 2007-09-27 | 삼성전자주식회사 | 금속배선 및 그 형성 방법 |
| US9735123B2 (en) * | 2014-03-13 | 2017-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure and manufacturing method |
| KR102662612B1 (ko) | 2016-10-02 | 2024-05-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 루테늄 라이너로 구리 전자 이동을 개선하기 위한 도핑된 선택적 금속 캡 |
| US10510657B2 (en) * | 2017-09-26 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with interconnecting structure and method for manufacturing the same |
| US10796995B2 (en) | 2017-11-29 | 2020-10-06 | Tohoku University | Semiconductor devices including a first cobalt alloy in a first barrier layer and a second cobalt alloy in a second barrier layer |
| US11043373B2 (en) * | 2018-07-31 | 2021-06-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect system with improved low-k dielectrics |
| US11158538B2 (en) * | 2020-02-04 | 2021-10-26 | International Business Machines Corporation | Interconnect structures with cobalt-infused ruthenium liner and a cobalt cap |
-
2020
- 2020-06-04 JP JP2022528359A patent/JP7525186B2/ja active Active
- 2020-06-04 KR KR1020227043096A patent/KR102865111B1/ko active Active
- 2020-06-04 WO PCT/JP2020/022202 patent/WO2021245893A1/ja not_active Ceased
- 2020-06-04 US US17/928,428 patent/US12444686B2/en active Active
- 2020-06-04 CN CN202080101478.7A patent/CN115699268A/zh active Pending
-
2021
- 2021-05-25 TW TW110118925A patent/TWI795789B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11145141A (ja) * | 1997-11-14 | 1999-05-28 | Matsushita Electron Corp | 半導体装置 |
| JP2001007204A (ja) * | 1999-06-24 | 2001-01-12 | Nec Corp | 多層配線の構造及びその製造方法 |
| JP2008098424A (ja) * | 2006-10-12 | 2008-04-24 | Rohm Co Ltd | 半導体装置および半導体装置の製造方法 |
| JP2008053753A (ja) * | 2007-11-08 | 2008-03-06 | Toshiba Corp | 半導体装置の製造方法 |
| JP2012169480A (ja) * | 2011-02-15 | 2012-09-06 | Panasonic Corp | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202147938A (zh) | 2021-12-16 |
| US20230154851A1 (en) | 2023-05-18 |
| KR20230020995A (ko) | 2023-02-13 |
| JP7525186B2 (ja) | 2024-07-30 |
| WO2021245893A1 (ja) | 2021-12-09 |
| US12444686B2 (en) | 2025-10-14 |
| TWI795789B (zh) | 2023-03-11 |
| CN115699268A (zh) | 2023-02-03 |
| KR102865111B1 (ko) | 2025-09-25 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221125 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230518 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240611 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240710 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7525186 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |