JPWO2021245893A5 - - Google Patents
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- Publication number
- JPWO2021245893A5 JPWO2021245893A5 JP2022528359A JP2022528359A JPWO2021245893A5 JP WO2021245893 A5 JPWO2021245893 A5 JP WO2021245893A5 JP 2022528359 A JP2022528359 A JP 2022528359A JP 2022528359 A JP2022528359 A JP 2022528359A JP WO2021245893 A5 JPWO2021245893 A5 JP WO2021245893A5
- Authority
- JP
- Japan
- Prior art keywords
- mass
- contain
- conductive wiring
- amount
- another embodiment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/022202 WO2021245893A1 (ja) | 2020-06-04 | 2020-06-04 | 半導体デバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021245893A1 JPWO2021245893A1 (https=) | 2021-12-09 |
| JPWO2021245893A5 true JPWO2021245893A5 (https=) | 2023-02-17 |
| JP7525186B2 JP7525186B2 (ja) | 2024-07-30 |
Family
ID=78830718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022528359A Active JP7525186B2 (ja) | 2020-06-04 | 2020-06-04 | 半導体デバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12444686B2 (https=) |
| JP (1) | JP7525186B2 (https=) |
| KR (1) | KR102865111B1 (https=) |
| CN (1) | CN115699268A (https=) |
| TW (1) | TWI795789B (https=) |
| WO (1) | WO2021245893A1 (https=) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3062464B2 (ja) * | 1997-11-14 | 2000-07-10 | 松下電子工業株式会社 | 半導体装置 |
| JP3562628B2 (ja) | 1999-06-24 | 2004-09-08 | 日本電気株式会社 | 拡散バリア膜、多層配線構造、およびそれらの製造方法 |
| US8696875B2 (en) | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
| US6833058B1 (en) * | 2000-10-24 | 2004-12-21 | Honeywell International Inc. | Titanium-based and zirconium-based mixed materials and sputtering targets |
| CN101847598B (zh) | 2001-11-14 | 2012-06-20 | 应用材料有限公司 | 用于溅射和再溅射的自离子化及电感耦合等离子体 |
| AU2003266560A1 (en) * | 2002-12-09 | 2004-06-30 | Yoshihiro Hayashi | Copper alloy for wiring, semiconductor device, method for forming wiring and method for manufacturing semiconductor device |
| CN1957487A (zh) * | 2004-01-06 | 2007-05-02 | Cymbet公司 | 具有一个或者更多个可限定层的层式阻挡物结构和方法 |
| KR100761467B1 (ko) | 2006-06-28 | 2007-09-27 | 삼성전자주식회사 | 금속배선 및 그 형성 방법 |
| JP5016286B2 (ja) | 2006-10-12 | 2012-09-05 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2008053753A (ja) | 2007-11-08 | 2008-03-06 | Toshiba Corp | 半導体装置の製造方法 |
| JP2012169480A (ja) | 2011-02-15 | 2012-09-06 | Panasonic Corp | 半導体装置及びその製造方法 |
| US9735123B2 (en) * | 2014-03-13 | 2017-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure and manufacturing method |
| WO2018063815A1 (en) | 2016-10-02 | 2018-04-05 | Applied Materials, Inc. | Doped selective metal caps to improve copper electromigration with ruthenium liner |
| US10510657B2 (en) * | 2017-09-26 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with interconnecting structure and method for manufacturing the same |
| US10796995B2 (en) | 2017-11-29 | 2020-10-06 | Tohoku University | Semiconductor devices including a first cobalt alloy in a first barrier layer and a second cobalt alloy in a second barrier layer |
| US11043373B2 (en) * | 2018-07-31 | 2021-06-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect system with improved low-k dielectrics |
| US11158538B2 (en) * | 2020-02-04 | 2021-10-26 | International Business Machines Corporation | Interconnect structures with cobalt-infused ruthenium liner and a cobalt cap |
-
2020
- 2020-06-04 CN CN202080101478.7A patent/CN115699268A/zh active Pending
- 2020-06-04 US US17/928,428 patent/US12444686B2/en active Active
- 2020-06-04 KR KR1020227043096A patent/KR102865111B1/ko active Active
- 2020-06-04 WO PCT/JP2020/022202 patent/WO2021245893A1/ja not_active Ceased
- 2020-06-04 JP JP2022528359A patent/JP7525186B2/ja active Active
-
2021
- 2021-05-25 TW TW110118925A patent/TWI795789B/zh active
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