CN115537027B - 一种应用于超级电容器的硼掺杂氟化聚酰亚胺膜的制备方法 - Google Patents

一种应用于超级电容器的硼掺杂氟化聚酰亚胺膜的制备方法 Download PDF

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CN115537027B
CN115537027B CN202211278755.9A CN202211278755A CN115537027B CN 115537027 B CN115537027 B CN 115537027B CN 202211278755 A CN202211278755 A CN 202211278755A CN 115537027 B CN115537027 B CN 115537027B
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Abstract

本发明涉及一种应用于超级电容器的硼掺杂氟化聚酰亚胺膜的制备方法。本发明制备的聚酰亚胺膜应用在超级电容器上具有良好的电化学性能,因为本发明使用的单体,二胺中含有‑CF3,而‑CF3的存在,在激光刻蚀时,能使刻蚀后的孔洞更多,使电解质更好的渗透到孔洞中;在氟化聚酰亚胺制备中掺杂杂原子硼之后,石墨烯晶格中碳与硼的取代使费米能级向价带转移,从而增强了掺杂石墨烯结构中的电荷存储和转移,进而提高超级电容器的电化学性能。

Description

一种应用于超级电容器的硼掺杂氟化聚酰亚胺膜的制备方法
技术领域
本发明涉及聚合物合成领域,具体涉及一种应用于超级电容器的硼掺杂氟化聚酰亚胺膜的制备方法。
背景技术
能源存储系统,如超级电容器(SCs)和锂离子电池(LIBs),在过去几年里得到了广泛的研究,以满足快速增长的高效率能源设备的需求,微加工技术的最新进展已经允许使用光刻技术在平面内制造微型超级电容器(MSCs),这将适用于集成电路。石墨烯基材料因其独特的结构和非凡的机械和电学性能而被广泛用作间充质干细胞的活性电极。聚酰亚胺经激光工艺后可转化为石墨烯,可作为超级电容器的材料,但是由商业膜制备出的石墨烯效果极差,亟需调整石墨烯导电材料电化学性能和提高其电容性能。
发明内容
针对以上问题,本发明提供了一种应用于超级电容器的硼掺杂氟化聚酰亚胺膜的制备方法,可有效解决背景技术中的问题。
为达到上述目的,本发明的技术方案是这样实现的:
一种应用于超级电容器的硼掺杂氟化聚酰亚胺膜的制备方法,包括如下步骤:
(1)聚酰亚胺溶液的合成:称取一定质量的二胺、一定质量的有机溶剂于四口烧瓶中,常温搅拌至二胺溶解,再称取一定质量二酸酐加入其中,常温下进行反应8~10h,反应结束后,得到粘性溶液;
(2)硼掺杂及膜的制备:向步骤(1)中所得的粘性溶液加入一定比例的硼酸,溶解后将溶液铺在干净的玻璃板上,用涂膜器刮平后放置烘箱中,预去除试剂,亚热胺化,冷却至室温后,将膜剥离,放置烘箱内干燥,最后得到硼掺杂的氟化聚酰亚胺膜;
(3)超级电容器的制备:在步骤(2)中干燥后的膜上用激光刻蚀出电极的形貌,在电极上涂覆PVA/H2SO4电解质(),等其干燥后,测试其性能。
进一步的,所述步骤(1)中,二胺为2,2'-双(三氟甲基)-4,4'-二氨基苯基醚(6FODA),二酸酐为均苯四甲酸酐(PMDA),有机溶剂为N’N-二甲基乙酰胺(DMAc),二胺和二酸酐摩尔比为1:0.5-2。
进一步的,所述步骤(2)中,加入的硼酸占粘性溶液质量比为0%-5%。
进一步的,所述步骤(2)中,亚热胺化以80-120℃保温0.5-1.5h、180-220℃保温0.5-1.5h、230-270℃保温15-45min、280-320℃保温15-45min的程序进行。
进一步的,所述步骤(3)中,激光条件为:激光功率100%,深度16。
相对于现有技术,本发明具有以下优势:
(1)本发明使用的单体,二胺和二酸酐中均含有-CF3,而-CF3的存在,在激光刻蚀时,使刻蚀后的孔洞更多,更密集,使电解质更好的渗透到孔洞中。
(2)在氟化聚酰亚胺制备中掺杂杂原子硼之后,石墨烯晶格中出现缺陷,从而增强了电解质在石墨烯结构中的存储和转移,进而提高超级电容的电化学性能。
附图说明
构成本发明的一部分的附图用来提供对本发明的进一步理解,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:
图1为制备出来的商业膜、硼掺杂为0%和硼掺杂为5%的氟化聚酰亚胺超级电容器的SEM。
具体实施方式
需要说明的是,在不冲突的情况下,本发明中的实施例及实施例中的特征可以相互组合。
下面将参考附图并结合实施例来详细说明本发明。
实施例一
(1)向三口烧瓶中加入二胺6FODA,2.0173g,16mLDMAc,常温下搅拌至溶解。
(2)再加入二酸酐PMDA,1.3085g,反应9h得到固含量为20%的粘性溶液。(3)取10g溶液在干净的玻璃板上铺膜,放置烘箱中预去除溶剂后,以100℃,1h、200℃,1h、250℃,30min、300℃,30min的程序进行亚热胺化,冷却至室温后,将膜(700μm)剥离,放置烘箱内干燥,最后得到硼掺杂为0%的氟化聚酰亚胺膜。
(4)在干燥后的膜上用激光分别刻蚀出深度16的电极形貌,在电极上涂覆PVA/H2SO4电解质,其中聚乙烯醇(PVA)、去离子水和H2SO4质量比为1:10:1,等其干燥。
实施例二
(1)向三口烧瓶中加入二胺6FODA,2.0173g,16mLDMAc,常温下搅拌至溶解。
(2)再加入二酸酐PMDA,1.3085g,反应9h得到固含量为20%的粘性溶液。(3)取0.1g硼酸加入10g溶液中,溶解后将溶液在干净的玻璃板上铺膜,放置烘箱中预去除溶剂后,以100℃,1h、200℃,1h、250℃,30min、300℃,30min的程序进行亚热胺化,冷却至室温后,将膜(700μm)剥离,放置烘箱内干燥,最后得到硼掺杂1%的氟化聚酰亚胺膜。
(4)在干燥后的膜上用激光分别刻蚀出深度16的电极形貌,在电极上涂覆PVA/H2SO4电解质,其中聚乙烯醇(PVA)、去离子水和H2SO4质量比为1:10:1,等其干燥。
实施例三
(1)向三口烧瓶中加入二胺6FODA,2.0173g,16mLDMAc,常温下搅拌至溶解。
(2)再加入二酸酐PMDA,1.3085g,反应9h得到固含量为20%的粘性溶性溶液。
(3)取0.3g硼酸加入10g溶液中,溶解后将溶液在干净的玻璃板上铺膜,放置烘箱中预去除溶剂后,以100℃,1h、200℃,1h、250℃,30min、300℃,30min的程序进行亚热胺化,冷却至室温后,将膜(700μm)剥离,放置烘箱内干燥,最后得到硼掺杂3%的氟化聚酰亚胺膜。
(4)在干燥后的膜上用激光分别刻蚀出深度16的电极形貌,在电极上涂覆PVA/H2SO4电解质,其中聚乙烯醇(PVA)、去离子水和H2SO4质量比为1:10:1,等其干燥。
实施例四
(1)向三口烧瓶中加入二胺6FODA,2.0173g,16mLDMAc,常温下搅拌至溶解。
(2)再加入二酸酐PMDA,1.3085g,反应9h得到固含量为20%的粘性溶液(3)取0.5g硼酸加入10g溶液中,溶解后将溶液在干净的玻璃板上铺膜,放置烘箱中预去除溶剂后,以100℃,1h、200℃,1h、250℃,30min、300℃,30min的程序进行亚热胺化,冷却至室温后,将膜(700μm)剥离,放置烘箱内干燥,最后得到硼掺杂5%的氟化聚酰亚胺膜。
(4)在干燥后的膜上用激光分别刻蚀出深度16的电极形貌,在电极上涂覆PVA/H2SO4电解质,其中聚乙烯醇(PVA)、去离子水和H2SO4质量比为1:10:1,等其干燥。
对比例一:用于对比的商业膜
(1)向三口烧瓶中加入二胺ODA,1.2014g,16mLDMAc,常温下搅拌至溶解。(2)再加入二酸酐PMDA,1.3085g,反应9h得到固含量为20%的粘性溶液。(3)取10g溶液在干净的玻璃板上铺膜,放置烘箱中预去除溶剂后,以100℃,1h、200℃,1h、250℃,30min、300℃,30min的程序进行亚热胺化,冷却至室温后,将膜(700μm)剥离,放置烘箱内干燥,最后得到商业膜。(4)在干燥后的膜上用激光分别刻蚀出深度16的电极形貌,在电极上涂覆PVA/H2SO4电解质,其中聚乙烯醇(PVA)、去离子水和H2SO4质量比为1:10:1,等其干燥。
图1为制备出来的商业膜、硼掺杂为0%和硼掺杂为5%的氟化聚酰亚胺超级电容器的SEM,从图中看出来,5%硼掺杂比0%硼掺杂和商业膜的孔洞更密集,0%硼掺杂比商业膜的孔洞密集。
由此膜制备而得的超级电容器,进行电化学测试后并计算得出,实施例一的面积比电容为19.29mF/cm2,实施例二的面积比电容为33.91mF/cm2,实施例三的面积比电容为28.83mF/cm2,实施例四的面积比电容为49.81mF/cm2,对比例一的面积比电容为2.17mF/cm2,由数据可见,由硼掺杂为5%的氟化PI做微型超级电容器,面积比电容是商业膜的23倍左右。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (1)

1.一种应用于超级电容器的硼掺杂氟化聚酰亚胺膜的制备方法,其特征在于:包括如下步骤:
(1)聚酰亚胺溶液的合成:称取一定质量的二胺、一定质量的有机溶剂于四口烧瓶中,常温搅拌至二胺溶解,再称取一定质量二酸酐加入其中,常温下进行反应8~10h,反应结束后,得到粘性溶液,二胺为2,2'-双(三氟甲基)-4,4'-二氨基苯基醚,二酸酐为均苯四甲酸酐,有机溶剂为N’N-二甲基乙酰胺,二胺和二酸酐摩尔比为1:0.5-2;
(2)硼掺杂及膜的制备:向步骤(1)中所得的粘性溶液加入一定比例的硼酸,溶解后将溶液铺在干净的玻璃板上,用涂膜器刮平后放置烘箱中,预去除试剂,亚热胺化,冷却至室温后,将膜剥离,放置烘箱内干燥,最后得到硼掺杂的氟化聚酰亚胺膜,亚热胺化以80-120℃保温0.5-1.5h、180-220℃保温0.5-1.5h、230-270℃保温15-45min、280-320℃保温15-45min的程序进行;
(3)超级电容器的制备:在步骤(2)中干燥后的膜上用激光刻蚀出电极的形貌,在电极上涂覆PVA/H2SO4电解质,等其干燥后,测试其性能;
所述步骤(2)中,加入的硼酸占粘性溶液质量比为5%。
所述步骤(3)中,激光条件为:激光功率100%,深度16。
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