CN115516637A - 阵列基板、阵列基板的制造方法与显示装置 - Google Patents
阵列基板、阵列基板的制造方法与显示装置 Download PDFInfo
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- CN115516637A CN115516637A CN202180000793.5A CN202180000793A CN115516637A CN 115516637 A CN115516637 A CN 115516637A CN 202180000793 A CN202180000793 A CN 202180000793A CN 115516637 A CN115516637 A CN 115516637A
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- 238000000034 method Methods 0.000 description 49
- 239000000463 material Substances 0.000 description 42
- 238000005229 chemical vapour deposition Methods 0.000 description 18
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- 238000004544 sputter deposition Methods 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
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- 239000000126 substance Substances 0.000 description 7
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- 238000006056 electrooxidation reaction Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
一种阵列基板、阵列基板的制造方法与显示装置，阵列基板包括：衬底(100)、第一导电层(310)、第二导电层(320)和至少两层有机绝缘层(510，520)；第一导电层(310)设于衬底(100)的一侧；第二导电层(320)设于第一导电层(310)背离衬底(100)的一侧，且在衬底(100)上的正投影与第一导电层(310)在衬底(100)上的正投影具有交叠区，交叠区包括过孔区和走线区；至少两层有机绝缘层(510，520)设于第一导电层(310)与第二导电层(320)之间，且在衬底(100)上的正投影与走线区投影具有交叠。
Description
PCT国内申请，说明书已公开。
Claims (17)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2021/087866 WO2022217599A1 (zh) | 2021-04-16 | 2021-04-16 | 阵列基板、阵列基板的制造方法与显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115516637A true CN115516637A (zh) | 2022-12-23 |
Family
ID=83639440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180000793.5A Pending CN115516637A (zh) | 2021-04-16 | 2021-04-16 | 阵列基板、阵列基板的制造方法与显示装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240047481A1 (zh) |
| CN (1) | CN115516637A (zh) |
| WO (1) | WO2022217599A1 (zh) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1429055A (zh) * | 2001-11-09 | 2003-07-09 | 株式会社半导体能源研究所 | 发光设备及其制造方法 |
| US20050041191A1 (en) * | 2003-08-21 | 2005-02-24 | Lg.Philips Lcd Co., Ltd. | Chip-on-glass array substrate of liquid crystal display device and method of fabricating the same |
| CN102473369A (zh) * | 2009-07-28 | 2012-05-23 | 夏普株式会社 | 配线基板及其制造方法、显示面板以及显示装置 |
| CN102640292A (zh) * | 2009-11-27 | 2012-08-15 | 株式会社半导体能源研究所 | 半导体装置和及其制造方法 |
| CN104465652A (zh) * | 2014-12-05 | 2015-03-25 | 上海天马微电子有限公司 | 一种阵列基板、显示装置及阵列基板的制作方法 |
| CN106154757A (zh) * | 2015-04-13 | 2016-11-23 | 华邦电子股份有限公司 | 掩模组 |
| CN109671726A (zh) * | 2019-01-04 | 2019-04-23 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板、显示装置 |
| CN109742091A (zh) * | 2019-01-10 | 2019-05-10 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
| CN109935515A (zh) * | 2017-12-18 | 2019-06-25 | 联华电子股份有限公司 | 形成图形的方法 |
| CN111952323A (zh) * | 2020-08-19 | 2020-11-17 | 京东方科技集团股份有限公司 | 一种显示基板的制备方法、显示基板及显示装置 |
| CN112056005A (zh) * | 2018-05-10 | 2020-12-08 | 夏普株式会社 | 显示装置 |
| CN112505964A (zh) * | 2020-11-20 | 2021-03-16 | 合肥鑫晟光电科技有限公司 | 发光基板及其制备方法、显示装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111524910A (zh) * | 2020-04-29 | 2020-08-11 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制造方法、显示装置 |
-
2021
- 2021-04-16 WO PCT/CN2021/087866 patent/WO2022217599A1/zh active Application Filing
- 2021-04-16 CN CN202180000793.5A patent/CN115516637A/zh active Pending
- 2021-04-16 US US17/639,316 patent/US20240047481A1/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1429055A (zh) * | 2001-11-09 | 2003-07-09 | 株式会社半导体能源研究所 | 发光设备及其制造方法 |
| US20050041191A1 (en) * | 2003-08-21 | 2005-02-24 | Lg.Philips Lcd Co., Ltd. | Chip-on-glass array substrate of liquid crystal display device and method of fabricating the same |
| CN102473369A (zh) * | 2009-07-28 | 2012-05-23 | 夏普株式会社 | 配线基板及其制造方法、显示面板以及显示装置 |
| CN102640292A (zh) * | 2009-11-27 | 2012-08-15 | 株式会社半导体能源研究所 | 半导体装置和及其制造方法 |
| CN104465652A (zh) * | 2014-12-05 | 2015-03-25 | 上海天马微电子有限公司 | 一种阵列基板、显示装置及阵列基板的制作方法 |
| CN106154757A (zh) * | 2015-04-13 | 2016-11-23 | 华邦电子股份有限公司 | 掩模组 |
| CN109935515A (zh) * | 2017-12-18 | 2019-06-25 | 联华电子股份有限公司 | 形成图形的方法 |
| CN112056005A (zh) * | 2018-05-10 | 2020-12-08 | 夏普株式会社 | 显示装置 |
| CN109671726A (zh) * | 2019-01-04 | 2019-04-23 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示面板、显示装置 |
| CN109742091A (zh) * | 2019-01-10 | 2019-05-10 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
| CN111952323A (zh) * | 2020-08-19 | 2020-11-17 | 京东方科技集团股份有限公司 | 一种显示基板的制备方法、显示基板及显示装置 |
| CN112505964A (zh) * | 2020-11-20 | 2021-03-16 | 合肥鑫晟光电科技有限公司 | 发光基板及其制备方法、显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022217599A1 (zh) | 2022-10-20 |
| US20240047481A1 (en) | 2024-02-08 |
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