CN115362631A - 比较器电路 - Google Patents

比较器电路 Download PDF

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Publication number
CN115362631A
CN115362631A CN202180025782.2A CN202180025782A CN115362631A CN 115362631 A CN115362631 A CN 115362631A CN 202180025782 A CN202180025782 A CN 202180025782A CN 115362631 A CN115362631 A CN 115362631A
Authority
CN
China
Prior art keywords
voltage
comparator
signal
output
input signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180025782.2A
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English (en)
Chinese (zh)
Inventor
筱部晃生
柳岛大辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN115362631A publication Critical patent/CN115362631A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/08Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electronic Switches (AREA)
  • Manipulation Of Pulses (AREA)
CN202180025782.2A 2020-03-30 2021-02-08 比较器电路 Pending CN115362631A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020060599 2020-03-30
JP2020-060599 2020-03-30
PCT/JP2021/004604 WO2021199683A1 (ja) 2020-03-30 2021-02-08 コンパレータ回路

Publications (1)

Publication Number Publication Date
CN115362631A true CN115362631A (zh) 2022-11-18

Family

ID=77928057

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180025782.2A Pending CN115362631A (zh) 2020-03-30 2021-02-08 比较器电路

Country Status (4)

Country Link
US (1) US20230146017A1 (https=)
JP (1) JPWO2021199683A1 (https=)
CN (1) CN115362631A (https=)
WO (1) WO2021199683A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590847A (ja) * 1991-09-28 1993-04-09 Victor Co Of Japan Ltd 電力増幅器
US5898323A (en) * 1996-05-29 1999-04-27 Kabushiki Kaisha Toshiba Level comparator
US6252435B1 (en) * 2000-10-05 2001-06-26 Pericom Semiconductor Corp. Complementary differential amplifier with resistive loads for wide common-mode input range
CN102290982A (zh) * 2010-05-31 2011-12-21 罗姆股份有限公司 发送器、接口装置和车载通信系统
CN110048608A (zh) * 2018-01-17 2019-07-23 罗姆股份有限公司 隔离式同步整流dc/dc转换器
JP6647690B1 (ja) * 2019-10-26 2020-02-14 トレックス・セミコンダクター株式会社 コンパレータおよびこれを有する充電制御ic

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6116612A (ja) * 1984-07-03 1986-01-24 Ricoh Co Ltd コンパレ−タ回路
US5289054A (en) * 1992-03-24 1994-02-22 Intel Corporation Fast electronic comparator
JP3392271B2 (ja) * 1995-11-02 2003-03-31 シャープ株式会社 演算増幅回路
US7592844B2 (en) * 2007-01-19 2009-09-22 Power Integrations, Inc. Comparator with complementary differential input stages
JP2010199490A (ja) * 2009-02-27 2010-09-09 Fuji Electric Systems Co Ltd パワー半導体装置の温度測定装置およびこれを使用したパワー半導体モジュール
JP5240524B2 (ja) * 2009-07-28 2013-07-17 株式会社デンソー スイッチング素子の温度検出装置
JP2011223130A (ja) * 2010-04-06 2011-11-04 Fuji Electric Co Ltd 比較回路
JP6104512B2 (ja) * 2011-04-01 2017-03-29 ローム株式会社 温度検出装置
JP2013012870A (ja) * 2011-06-29 2013-01-17 Toshiba Corp 差動増幅回路及びコンパレータ
JP5602170B2 (ja) * 2012-03-03 2014-10-08 レノボ・シンガポール・プライベート・リミテッド プロセッサの動作を制御する方法および電子機器
US8736355B2 (en) * 2012-06-12 2014-05-27 Taiwan Semiconductor Manufacturing Co., Ltd. Device layout for reference and sensor circuits
JP5655824B2 (ja) * 2012-07-20 2015-01-21 株式会社デンソー 温度検出装置
JP6259649B2 (ja) * 2013-12-06 2018-01-10 株式会社小糸製作所 車両用灯具
US20170142519A1 (en) * 2015-11-17 2017-05-18 Cirrus Logic International Semiconductor Ltd. Digital microphones
JP6646490B2 (ja) * 2016-03-23 2020-02-14 キヤノン株式会社 電源回路及び画像形成装置
US10476433B2 (en) * 2016-07-05 2019-11-12 Delta Electronics, Inc. Microwave generator with power factor correction function and control method thereof
CN112865763B (zh) * 2019-11-28 2025-02-07 长鑫存储技术有限公司 比较器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590847A (ja) * 1991-09-28 1993-04-09 Victor Co Of Japan Ltd 電力増幅器
US5898323A (en) * 1996-05-29 1999-04-27 Kabushiki Kaisha Toshiba Level comparator
US6252435B1 (en) * 2000-10-05 2001-06-26 Pericom Semiconductor Corp. Complementary differential amplifier with resistive loads for wide common-mode input range
CN102290982A (zh) * 2010-05-31 2011-12-21 罗姆股份有限公司 发送器、接口装置和车载通信系统
CN110048608A (zh) * 2018-01-17 2019-07-23 罗姆股份有限公司 隔离式同步整流dc/dc转换器
JP6647690B1 (ja) * 2019-10-26 2020-02-14 トレックス・セミコンダクター株式会社 コンパレータおよびこれを有する充電制御ic

Also Published As

Publication number Publication date
JPWO2021199683A1 (https=) 2021-10-07
WO2021199683A1 (ja) 2021-10-07
US20230146017A1 (en) 2023-05-11

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