JPWO2021199683A1 - - Google Patents

Info

Publication number
JPWO2021199683A1
JPWO2021199683A1 JP2022511610A JP2022511610A JPWO2021199683A1 JP WO2021199683 A1 JPWO2021199683 A1 JP WO2021199683A1 JP 2022511610 A JP2022511610 A JP 2022511610A JP 2022511610 A JP2022511610 A JP 2022511610A JP WO2021199683 A1 JPWO2021199683 A1 JP WO2021199683A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022511610A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021199683A1 publication Critical patent/JPWO2021199683A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01Shaping pulses
    • H03K5/08Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electronic Switches (AREA)
  • Manipulation Of Pulses (AREA)
JP2022511610A 2020-03-30 2021-02-08 Pending JPWO2021199683A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020060599 2020-03-30
PCT/JP2021/004604 WO2021199683A1 (ja) 2020-03-30 2021-02-08 コンパレータ回路

Publications (1)

Publication Number Publication Date
JPWO2021199683A1 true JPWO2021199683A1 (https=) 2021-10-07

Family

ID=77928057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022511610A Pending JPWO2021199683A1 (https=) 2020-03-30 2021-02-08

Country Status (4)

Country Link
US (1) US20230146017A1 (https=)
JP (1) JPWO2021199683A1 (https=)
CN (1) CN115362631A (https=)
WO (1) WO2021199683A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6116612A (ja) * 1984-07-03 1986-01-24 Ricoh Co Ltd コンパレ−タ回路
JPH09321586A (ja) * 1996-05-29 1997-12-12 Toshiba Microelectron Corp レベル比較器
JP2010517336A (ja) * 2007-01-19 2010-05-20 パワー・インテグレーションズ・インコーポレーテッド 相補的な差動入力段を有する比較器
JP2010199490A (ja) * 2009-02-27 2010-09-09 Fuji Electric Systems Co Ltd パワー半導体装置の温度測定装置およびこれを使用したパワー半導体モジュール
JP2011027625A (ja) * 2009-07-28 2011-02-10 Denso Corp スイッチング素子の温度検出装置
JP2012227517A (ja) * 2011-04-01 2012-11-15 Rohm Co Ltd 温度検出装置、温度検出回路およびパワー半導体モジュール
JP2013012870A (ja) * 2011-06-29 2013-01-17 Toshiba Corp 差動増幅回路及びコンパレータ
JP2014020994A (ja) * 2012-07-20 2014-02-03 Denso Corp 温度検出装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590847A (ja) * 1991-09-28 1993-04-09 Victor Co Of Japan Ltd 電力増幅器
US5289054A (en) * 1992-03-24 1994-02-22 Intel Corporation Fast electronic comparator
JP3392271B2 (ja) * 1995-11-02 2003-03-31 シャープ株式会社 演算増幅回路
US6252435B1 (en) * 2000-10-05 2001-06-26 Pericom Semiconductor Corp. Complementary differential amplifier with resistive loads for wide common-mode input range
JP2011223130A (ja) * 2010-04-06 2011-11-04 Fuji Electric Co Ltd 比較回路
JP5491969B2 (ja) * 2010-05-31 2014-05-14 ローム株式会社 トランスミッタ、インタフェイス装置、車載通信システム
JP5602170B2 (ja) * 2012-03-03 2014-10-08 レノボ・シンガポール・プライベート・リミテッド プロセッサの動作を制御する方法および電子機器
US8736355B2 (en) * 2012-06-12 2014-05-27 Taiwan Semiconductor Manufacturing Co., Ltd. Device layout for reference and sensor circuits
JP6259649B2 (ja) * 2013-12-06 2018-01-10 株式会社小糸製作所 車両用灯具
US20170142519A1 (en) * 2015-11-17 2017-05-18 Cirrus Logic International Semiconductor Ltd. Digital microphones
JP6646490B2 (ja) * 2016-03-23 2020-02-14 キヤノン株式会社 電源回路及び画像形成装置
US10476433B2 (en) * 2016-07-05 2019-11-12 Delta Electronics, Inc. Microwave generator with power factor correction function and control method thereof
JP7028653B2 (ja) * 2018-01-17 2022-03-02 ローム株式会社 絶縁同期整流型dc/dcコンバータ
JP6647690B1 (ja) * 2019-10-26 2020-02-14 トレックス・セミコンダクター株式会社 コンパレータおよびこれを有する充電制御ic
CN112865763B (zh) * 2019-11-28 2025-02-07 长鑫存储技术有限公司 比较器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6116612A (ja) * 1984-07-03 1986-01-24 Ricoh Co Ltd コンパレ−タ回路
JPH09321586A (ja) * 1996-05-29 1997-12-12 Toshiba Microelectron Corp レベル比較器
JP2010517336A (ja) * 2007-01-19 2010-05-20 パワー・インテグレーションズ・インコーポレーテッド 相補的な差動入力段を有する比較器
JP2010199490A (ja) * 2009-02-27 2010-09-09 Fuji Electric Systems Co Ltd パワー半導体装置の温度測定装置およびこれを使用したパワー半導体モジュール
JP2011027625A (ja) * 2009-07-28 2011-02-10 Denso Corp スイッチング素子の温度検出装置
JP2012227517A (ja) * 2011-04-01 2012-11-15 Rohm Co Ltd 温度検出装置、温度検出回路およびパワー半導体モジュール
JP2013012870A (ja) * 2011-06-29 2013-01-17 Toshiba Corp 差動増幅回路及びコンパレータ
JP2014020994A (ja) * 2012-07-20 2014-02-03 Denso Corp 温度検出装置

Also Published As

Publication number Publication date
CN115362631A (zh) 2022-11-18
WO2021199683A1 (ja) 2021-10-07
US20230146017A1 (en) 2023-05-11

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