CN115346952A - 一种用于大功率大电流器件的封装结构及其制备方法 - Google Patents
一种用于大功率大电流器件的封装结构及其制备方法 Download PDFInfo
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Abstract
本发明涉及集成电路封装技术领域,具体涉及一种用于大功率大电流器件的封装结构及其制备方法。该封装结构包括具有氮化铝多层布线结构的陶瓷基板和设置在陶瓷基板上的金属盖帽,金属盖帽具有容纳电子器件的密封内腔,设置在密封内腔中的电子器件贴合所述陶瓷基板表面,并与布线结构连接;在电子器件与陶瓷基板的贴合位置,在陶瓷基板的表面还设有复合薄膜层,复合薄膜层在陶瓷基板表面自下至上依次包括种子层、DPC厚铜层、镍层和金层。本发明将芯片直接组装到陶瓷基板表面,缩短了芯片到基板焊盘间的电气传输距离,多层布线的陶瓷基板可实现信号的垂直互联,提高了大功率大电流器件的集成度,可满足大规模大功率大电流器件的性能需求。
Description
技术领域
本发明涉及集成电路封装技术领域,具体涉及一种用于大功率大电流器件的封装结构及其制备方法。
背景技术
随着大功率大电流器件的尺寸越来越小,器件的集成度要求也越来越高,传统的金属封装结构以及封装方式难以满足未来新型大功率大电流器件的发展需求。
基于氮化铝多层陶瓷封装结构和传统芯片封装的结构和方法,由于氮化铝多层陶瓷具有热导率高,同时可以进行多层布线,很好地满足大功率大电流器件对散热的要求,以及信号垂直互联的需求。但是氮化铝多层陶瓷使用的导体材料是钨导体,方阻较大,对于电流超过20A的大功率大电流器件则很难满足性能需求。并且由于传统封装结构芯片采用键合的组装方式,使得芯片信号到基板焊盘之间损耗较大,从而导致大功率大电流器件电源转换效率较低,无法满足产品需求。
发明内容
为解决上述技术问题,本发明的目的之一在于提供一种用于大功率大电流器件的封装结构。
本发明采用了以下技术方案:
一种用于大功率大电流器件的封装结构,包括具有氮化铝多层布线结构的陶瓷基板和设置在所述陶瓷基板上的金属盖帽,所述金属盖帽具有容纳电子器件的密封内腔,设置在密封内腔中的电子器件贴合所述陶瓷基板表面,并与所述布线结构连接;在所述电子器件与陶瓷基板的贴合位置,在陶瓷基板的表面还设有复合薄膜层,所述复合薄膜层在陶瓷基板表面自下至上依次包括种子层、DPC厚铜层、镍层和金层。
优选的,所述陶瓷基板底部设置焊球或焊柱,所述多层布线结构包括在陶瓷基板中沿水平向设置的多层导带和沿竖直向设置的过孔;所述过孔与导带连接,并联通陶瓷基板表面设置的电子器件及底部设置的焊球或焊柱,实现电子器件信号的垂直互联。
优选的,所述种子层材质为W/Ti薄膜合金或者Ti金属,种子层厚度0.1~0.6 μm;所述DPC厚铜层厚度在30~80 μm,所述镍层为电镀镍,厚度2.0~7.9 μm,所述金层为电镀金,厚度0.3~5.7 μm。
优选的,在陶瓷基板未接触电子器件的位置,所述陶瓷基板表面设置有阻焊层,所述阻焊层材质为苯并环丁烯BCB或聚酰亚胺PI,且阻焊层的厚度与复合薄膜层一致。
优选的,所述电子器件通过倒装焊方式组装到陶瓷基板表面。
优选的,所述电子器件包括有源芯片或无源器件电容,所述有源芯片为Si芯片或GaN芯片或GaAs芯片,有源芯片与所述陶瓷基板表面通过倒装焊球连接。
优选的,所述焊球为BGA焊球,焊柱为CCGA焊柱或PGA焊柱。
优选的,所述导带和过孔中使用的导体材料为钨。
本发明还提供一种上述用于大功率大电流器件的封装结构的制备方法,该方法包括以下步骤:
S1. 制备具有多层布线结构的陶瓷基板:
S11. 根据产品需求流延出所需厚度的氮化铝陶瓷生料带,根据设计要求在生料带上进行水平方向的导带印制和竖直方向的过孔冲孔及孔内导体填充;
S12. 将完成印制及填充后的生料带在模具上进行叠压,再进行等静压,使各层生料带紧密结合,过孔和导带连接形成具有多层布线结构的生瓷体;
S13. 对叠压成型的生瓷体进行分切,分切后的生瓷体烧结,得到所需的陶瓷基板;
S2. 制备复合薄膜层:
S21. 在S13制备的陶瓷基板表面,溅射一层种子层,种子层为厚度0.1~0.6 μm的W/Ti合金或者Ti金属;溅射前,先对陶瓷基板表面进行打磨,打磨至粗糙度≤5 μm,平面度≤0.02 mm,以提高种子层结合力;
S22. 在溅射的种子层表面电镀30~80 μm的厚铜,形成DPC厚铜层,同时对DPC厚铜层表面抛光至粗糙度≤80nm后,在铜表面光刻出所需的表面金属化图形;
S23. 在光刻后的铜表面,依次电镀2.0~7.9 μm的镍层和0.3~5.7 μm的金层;上述种子层、DPC厚铜层、镍层和金层即为复合薄膜层;
S3. 安装电子器件:将所需的电子器件组装在陶瓷基板表面,并采用丝网印刷的方式印制焊膏,在回流炉中进行焊接,使电子器件结合在陶瓷基板表面;
S4. 封盖:在陶瓷基板四周根据金属盖帽的大小设置铅锡焊料,将金属盖帽与陶瓷基板在回流炉中焊接,形成所需的封装结构。
优选的,所述步骤S12中等静压压力8~15MPa,时间6-8min;步骤S13中烧结温度1780~1810℃,烧结时间3~6h。
优选的,所述步骤S3中焊膏为Sn93.6Ag4.7Cu1.7合金,印刷厚度0.08~0.12mm。
优选的,所述封装结构还包括设置在陶瓷基板底部的焊球或焊柱,在陶瓷基板的底面通过丝网印刷的方式印制焊膏,根据设计需求将焊球或焊柱设置在合适位置,并与陶瓷基板中的多层布线结构连接,放入回流焊炉中进行焊接,焊接温度180~220℃,焊接时间3~5 min。
优选的,所述步骤S3中回流焊的温度为250~280℃,焊接时间为3~5 min;所述步骤S4中回流焊的温度为220~250℃,焊接时间5~8 min,铅锡焊料的设置厚度为0.05 mm。
优选的,还包括步骤S24,在复合薄膜层中设置阻焊层,具体为:根据S22中光刻的金属化图形位置,对复合薄膜层再次光刻,去除非金属化图形区域,并向非金属化图形区域内旋涂绝缘介质,形成阻焊层,所述绝缘介质的材料为苯并环丁烯BCB或聚酰亚胺PI,阻焊层的厚度与复合薄膜层一致。
本发明的有益效果在于:
1)本发明将电子器件通过倒装焊方式直接组装在陶瓷基板表面,无需通过键合等方式进行封装,有效缩短了电气传输距离,降低了信号传输损耗,减小了接触电阻,提高了电源转换效率。本发明中电子器件可以是大功率大电流的不同材料芯片,如Si芯片、GaN芯片、GaAs芯片等有源芯片和无源器件。
2)本发明中陶瓷基板使用氮化铝多层陶瓷,通过多层布线实现信号的垂直互联,提高了大功率大电流器件的集成度,缩短了电气传输距离,缩小了产品体积,同时氮化铝陶瓷热导率高,可以很好地将芯片工作产生的热量及时地散出去,散热效率高。为配合氮化铝多层陶瓷的烧结工艺,多层陶瓷基板内部导体选择与其更加匹配的钨导体材料,尽管钨导体相较于铜导体、金导体而言,电阻率较大,但本申请改进的封装结构允许通过增加过孔数量和导带的宽度减小传输线的阻值,从而提高氮化铝多层基板内层过电流能力,克服传统氮化铝陶瓷多层基板的弊端。
3)基板表面复合薄膜层中,种子层主要起到增加薄膜与基板结合力的作用;厚铜层采用了30~80μm的DPC厚铜层,铜的电阻很小,可以实现器件过20A以上大电流的要求,提高电源转换效率。增加的阻焊层主要起到绝缘和阻止焊料流淌的作用。
4)设置在电子器件四周的可伐金属盖帽可以使电子器件实现气密封装,保护有源芯片在各种恶劣的环境下正常工作。电子器件通过陶瓷基本底面设置的BGA阵列或CCGA阵列或PGA阵列方式将电气信号进行扇出,BGA焊球或CCGA焊柱或PGA焊柱主要起到陶瓷封装与PCB复合介质板焊接时缓冲应力的作用,能够提高整个封装器件的可靠性。
5)电子器件、盖帽和焊球或焊柱的焊接均采用回流焊,本发明中将三次回流焊的温度控制形成温度梯度,每次焊接的温度比上一步骤低30~50℃,能够满足产品的可靠性要求。
附图说明
图1为本发明的结构示意图;
图2为本发明中多层陶瓷基板中布线与电子器件及焊球或焊柱的连接示意图;
图3为图2中Ⅰ部分的放大图,图中显示了复合薄膜层结构及与阻焊层的关系;
图4为本申请中电子器件布置再陶瓷基板的俯视示意图。
图中标注符号的含义如下:
10-陶瓷基板 11-导带 12-过孔
20-金属盖帽 30-电子器件 31-有源芯片 32-无源器件电容
40-复合薄膜层 41-种子层 42- DPC厚铜层 43-镍层 44-金层
50-阻焊层
60-焊球或焊柱。
具体实施方式
下面结合附图和实施例来对本发明的技术方案做出更为具体的说明:
实施例1
如图1-图4所示,一种用于大功率大电流器件的封装结构,包括具有氮化铝多层布线结构的陶瓷基板10和设置在所述陶瓷基板10上的金属盖帽20,金属盖帽20材质一般为可伐合金。所述金属盖帽20具有容纳电子器件30的密封内腔,电子器件30通过倒装焊方式贴合陶瓷基板10设置在密封内腔中,并与所述陶瓷基板10中的布线连接。
上述电子器件可以是大功率大电流的不同材料芯片,如Si芯片、GaN芯片、GaAs芯片等有源芯片31和无源器件电容32等。
陶瓷基板10底部设置焊球或焊柱60,所述多层布线结构包括在陶瓷基板10多层结构中沿水平向设置的导带11和沿竖直向设置的过孔12,所述过孔12与导带11均采用钨为导体,过孔12与导带11连接,并联通陶瓷基板10表面设置的电子器件30及底部设置的焊球或焊柱60,实现电子器件30信号的垂直互联。上述焊球或焊柱60中,焊球为BGA焊球,焊柱为CCGA焊柱或PGA焊柱,焊球或焊柱60形成阵列的数量及间距根据器件信号引出端数量及信号分布进行定制,阵列焊球或焊柱的直径及长度根据器件引出端的间距及整体器件的尺寸进行定制。
在所述电子器件30与陶瓷基板10的贴合位置,在陶瓷基板10的表面还镀设有联通电子器件30和陶瓷基板10布线结构的复合薄膜层40,所述复合薄膜层40在陶瓷基板10表面自下至上依次包括种子层41、DPC厚铜层42、镍层43和金层44。其中,所述种子层41材质为W/Ti薄膜合金或者Ti金属,种子层41厚度0.1~0.6 μm;所述DPC厚铜层42厚度在30~80 μm,所述镍层43为电镀镍层,厚度2.0~7.9 μm,所述金层44为电镀金层,厚度0.3~5.7 μm。
在陶瓷基板10未接触电子器件30的位置,所述陶瓷基板10表面设置有阻焊层50,阻焊层50材质为苯并环丁烯BCB或聚酰亚胺PI,且阻焊层50的厚度与复合薄膜层40一致。
本发明中,不对陶瓷基板10的层数以及导带11、过孔12数量或者电子器件的具体大小、数量和型号做具体限定,本领域技术人员在实施本发明提供的封装结构时,根据实际应用需求进行调整和选择即可。但一般而言,为了更好地实现大功率大电流器件过20A以上电流的需求,氮化铝陶瓷基板的层数和过孔数量可以适应性调整增加,例如为了实现过20A的电流,可以在器件过大电流的输入端和输出端的焊盘区域设计35~45个直径0.15mm的过孔,通过电路并联的方式减小氮化铝多层陶瓷内部电路内阻等。
上述一种用于大功率大电流器件的封装结构的制备方法,包括以下步骤:
S1. 制备具有多层布线结构的陶瓷基板10:
S11. 根据产品需求流延出所需厚度的氮化铝陶瓷生料带,根据设计要求对生料带进行贴片及冲孔,然后在每一层的氮化铝生料带上进行竖直方向的过孔12填充和水平方向的导带11印制,过孔12填充和导带11印制主要通过丝网印刷的方式进行,使用的导体浆料主要为钨导体,设置过孔12的作用是实现垂直方向的导通,导带是实现水平方向的导通。
S12. 将完成印制及填充后的生料带在模具上进行叠压,叠压后的瓷体再进行等静压,等静压压力8-15MPa,时间6-8min,使每层生料带紧密地结合在一起,并使过孔12和导带11连接配合形成多层布线结构;
S13. 对叠压成型的生瓷体进行分切,分切后的生瓷体烧结,烧结温度1780-1810℃,烧结时间3-6h,得到所需的陶瓷基板10。
通过步骤S1制备得到的陶瓷基板10以氮化铝材料为主材,由多层生料带叠压后经过高温共烧获取,氮化铝多层陶瓷在大功率大电流器件中不仅起到电气信号垂直互联、散热的作用,同时起到机械支撑的作用。
S2. 制备复合薄膜层40,即在陶瓷基板10表面进行金属化处理:
S21. 先对S13制备的陶瓷基板10表面进行打磨,使陶瓷表面的粗糙度值≤5μm,基板表面平面度≤0.02mm,从而使薄膜金属化可以附着在氮化铝多层陶瓷基板10的表面,并具有一定的结合力;然后在打磨后的陶瓷基板10表面溅射一层种子层41,种子层41为厚度0.1~0.6 μm的W/Ti合金或者Ti金属,进一步增加薄膜与基板的结合力;
S22. 在溅射的种子层41表面电镀30~80μm的厚铜,形成DPC厚铜层,由于电镀厚铜后表面平面度变差,故电镀厚铜后需进行抛光处理,对DPC厚铜层42表面抛光至粗糙度≤80 nm后,在铜表面光刻出所需的表面金属化图形;
S23. 在光刻后的铜表面,依次电镀2.0~7.9 μm的镍层43和0.3~5.7μm的金层44。
上述种子层41、DPC厚铜层42、镍层43和金层44构成复合薄膜层40,复合薄膜层通过与研磨后的氮化铝多层陶瓷基板10表面的过孔12结合,实现表面焊盘之间的电气信号互联、正反面焊盘之间的电气信号互联。
S24. 在复合薄膜层40中设置阻焊层50,具体为:根据S22中光刻的金属化图形位置,对复合薄膜层40再次光刻,去除非金属化图形区域,并向非金属化图形区域内通过高速离心设备旋涂绝缘介质,形成阻焊层50,所述绝缘介质的材料为苯并环丁烯BCB或聚酰亚胺PI等高分子材料,阻焊层50的厚度与复合薄膜层40一致。
薄膜阻焊层50主要起到绝缘、阻止焊料流淌的作用。设置阻焊层50后,根据设计的要求,还可以在烘干后的薄膜阻焊层50表面光刻出新的符合组装要求的图形。
S3. 安装电子器件30:将所需的电子器件30焊接在陶瓷基板10表面,电子器件30的种类及数量根据具体产品的电路设计定制。现在陶瓷基板10适合的位置采用丝网印刷的方式印制焊膏,焊膏使用Sn93.6Ag4.7Cu1.7合金,印刷厚度0.08-0.12mm,然后放置电子器件30,在回流焊炉中进行回流焊焊接,回流焊的焊接温度为250~280℃,焊接时间为3~5min;
S4. 封盖:在陶瓷基板10四周根据金属盖帽20的大小设置铅锡焊料,铅锡焊料的设置厚度为0.05 mm,将加工好的金属盖帽20与陶瓷基板10在回流焊炉中焊接,焊接温度为220~250℃,焊接时间5~8 min,形成所需的封装结构。
S5. 设置焊球或焊柱60:在陶瓷基板10的底面通过丝网印刷的方式印制焊膏,根据设计需求将焊球或焊柱60设置在合适位置,并与陶瓷基板10中的多层电路结构连接,放入回流焊炉中进行焊接,焊接温度180~220℃,焊接时间3~5 min,即得到所需的封装结构。
封装结构可组装到PCB复合介质板表面进行使用。
实施例2
利用本发明制备的封装结构制备负载点电源产品(实验组)与市场同类型的产品(对比组)对比,实验组采用氮化铝多层陶瓷基板做基底,基板表面制作总厚度为50μm厚度的复合薄膜层,基板表面组装芯片、电容、电阻后,基板四周焊接金属盖帽,最后在基板的背面进行BGA植球,对比组采用氧化铝多层陶瓷基板做基底,表层金属化为W/Ni/Au,其中W层厚度为8-15μm,Ni层厚度为3.0-9.8μm,Au层厚度为1.27-5.4μm,基板表面组装的芯片、电容、电阻等器件与实验组相同。
对产品分别进行输出功率,输出电流,温度循环以及热冲击等性能测试,性能对比结果如下表所示。
从表格中可以看出,利用本发明封装结构研制的负载点电源产品,输出功率、输出电流、温度循环指标均优于国外同系列产品,转换效率和热冲击指标与国外产品指标相当。从测试结果来看,本发明研制的产品电路性能指标和可靠性指标均合格,而输出功率、输出电流指标远高于同类型产品,表明本发明封装结构适用于大功率大电流器件封装,能够满足使用需求。
以上仅为本发明创造的较佳实施例而已,并不用以限制本发明创造;尽管参照前述实施方式对本发明进行了详细的说明,本领域的普通技术人员应当理解:凡在本发明创造的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明创造的保护范围之内。
Claims (9)
1.一种用于大功率大电流器件的封装结构,其特征在于,包括具有氮化铝多层布线结构的陶瓷基板(10)和设置在所述陶瓷基板(10)上的金属盖帽(20),所述金属盖帽(20)具有容纳电子器件(30)的密封内腔,设置在密封内腔中的电子器件(30)贴合所述陶瓷基板(10)表面,并与布线结构连接;在所述电子器件(30)与陶瓷基板(10)的贴合位置,在陶瓷基板(10)的表面还设有复合薄膜层(40),所述复合薄膜层(40)在陶瓷基板(10)表面自下至上依次包括种子层(41)、DPC厚铜层(42)、镍层(43)和金层(44);
所述种子层(41)材质为W/Ti薄膜合金或者Ti金属,种子层(41)厚度0.1~0.6 μm;所述DPC厚铜层(42)厚度在30~80 μm,所述镍层(43)为电镀镍层,厚度2.0~7.9 μm,所述金层(44)为电镀金层,厚度0.3~5.7 μm。
2.如权利要求1所述的一种用于大功率大电流器件的封装结构,其特征在于,所述陶瓷基板(10)底部设置焊球或焊柱(60),所述多层布线结构包括在陶瓷基板(10)中沿水平向设置的多层导带(11)和沿竖直向设置的过孔(12);所述过孔(12)与导带(11)连接,并联通陶瓷基板(10)表面设置的电子器件(30)及底部设置的焊球或焊柱(60),实现电子器件(30)信号的垂直互联。
3.如权利要求1所述的一种用于大功率大电流器件的封装结构,其特征在于,在陶瓷基板(10)未接触电子器件(30)的位置,所述陶瓷基板(10)表面设置有阻焊层(50),阻焊层(50)材质为苯并环丁烯BCB或聚酰亚胺PI,且阻焊层(50)的厚度与复合薄膜层(40)一致。
4.如权利要求1所述的一种用于大功率大电流器件的封装结构,其特征在于,所述电子器件(30)通过倒装焊方式组装到陶瓷基板(10)表面。
5.如权利要求2所述的一种用于大功率大电流器件的封装结构,其特征在于,所述焊球为BGA焊球,焊柱为CCGA焊柱或PGA焊柱。
6.一种如权利要求1-5任一项所述的用于大功率大电流器件的封装结构的制备方法,其特征在于,步骤如下:
S1. 制备具有多层布线结构的陶瓷基板(10):
S11. 根据产品需求流延出所需厚度的氮化铝陶瓷生料带,根据设计要求在生料带上进行水平方向的导带(11)印制和竖直方向的过孔(12)冲孔及孔内导体填充;
S12. 将完成印制及填充后的生料带在模具上进行叠压,再进行等静压,使各层生料带紧密结合,过孔(12)和导带(11)连接配合形成具有多层布线结构的生瓷体;
S13. 对叠压成型的生瓷体进行分切,分切后的生瓷体烧结,得到所需的陶瓷基板(10);
S2. 制备复合薄膜层(40):
S21. 在S13制备的陶瓷基板(10)表面,溅射一层种子层(41),种子层(41)为厚度0.1~0.6 μm的W/Ti合金或者Ti金属;
S22. 在溅射的种子层(41)表面电镀30~80μm的厚铜,形成厚铜层(42),同时对DPC厚铜层(42)表面抛光至粗糙度≤80 nm后,在铜表面光刻出所需的表面金属化图形;
S23. 在光刻后的铜表面,依次电镀2.0~7.9 μm的镍层(43)和0.3~5.7μm的金层(44);上述种子层(41)、DPC厚铜层(42)、镍层(43)和金层(44)构成复合薄膜层(40);
S3. 安装电子器件(30):将所需的电子器件(30)组装在陶瓷基板(10)表面,并采用丝网印刷的方式印制焊膏,在回流炉中进行焊接,使电子器件(30)结合在陶瓷基板(10)表面;
S4. 封盖:在陶瓷基板(10)四周根据金属盖帽(20)的大小设置铅锡焊料,将金属盖帽(20)与陶瓷基板(10)在回流炉中焊接,形成所需的封装结构。
7.如权利要求6所述的制备方法,其特征在于,所述封装结构还包括设置在陶瓷基板(10)底部的焊球或焊柱(60),在陶瓷基板(10)的底面通过丝网印刷的方式印制焊膏,根据设计需求将焊球或焊柱(60)设置在合适位置,并与陶瓷基板(10)中的多层布线结构连接,放入回流焊炉中进行焊接,焊接温度180~220℃,焊接时间3~5 min。
8.如权利要求7所述的制备方法,其特征在于,所述步骤S3中回流焊的温度为250~280℃,焊接时间为3~5min;所述步骤S4中回流焊的温度为220~250℃,焊接时间5~8 min,铅锡焊料的设置厚度为0.05 mm。
9.如权利要求6所述的制备方法,其特征在于,还包括步骤S24,在复合薄膜层(40)中设置阻焊层(50),具体为:根据S22中光刻的金属化图形位置,对复合薄膜层(40)再次光刻,去除非金属化图形区域,并向非金属化图形区域内旋涂绝缘介质,形成阻焊层(50),所述绝缘介质的材料为苯并环丁烯BCB或聚酰亚胺PI,阻焊层(50)的厚度与复合薄膜层(40)一致。
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