CN115340830B - 一种半导体材料加工用切割胶带 - Google Patents

一种半导体材料加工用切割胶带 Download PDF

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CN115340830B
CN115340830B CN202211141039.6A CN202211141039A CN115340830B CN 115340830 B CN115340830 B CN 115340830B CN 202211141039 A CN202211141039 A CN 202211141039A CN 115340830 B CN115340830 B CN 115340830B
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蒋瑞阳
崔庆珑
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Weishida Semiconductor Technology Zhangjiagang Co ltd
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Abstract

本发明公开了一种半导体材料加工用切割胶带，包括基材层以及涂覆在所述基材层两侧的第一胶黏剂层和第二胶黏剂层，所述第一胶黏剂层和第二胶黏剂层所采用的胶黏剂选自A胶或B胶，A胶为UV型油性聚丙烯酸酯，B胶为非UV的油性聚丙烯酸酯，两者的剥离力均较低，涂有A胶的一侧面经UV照射后剥离力下降明显，便于剥离，且不会出现残胶。

Description

一种半导体材料加工用切割胶带
技术领域
本发明涉及胶带技术领域，具体涉及一种半导体材料加工用切割胶带。
背景技术
芯片切割、封装是整个半导体行业的基础，随着信息产业的飞速发展，应用于半导体行业的各种保护膜层出不穷，既有用于支撑的非UV保护膜，也有专门用于切割后解UV的减粘膜。
但是随着半导体行业的飞速发展，单一胶面的保护膜已不能满足更多制程的要求。此时双面胶膜就脱颖而出了，但目前国内双面胶基本还是以非UV为主，基材也多选择泡棉、PET或带有硅油等离型剂的纸、布等材质。专门针对芯片行业的一面非UV，一面UV减粘的双面胶几乎没有。如何解决上述技术问题，制备一面做承载，一面用于切割后解UV的双面胶是本领域技术人员研究的方向。
发明内容
本发明的目的是克服现有技术的不足，提供一种半导体材料加工用切割胶带。
为达到上述目的，本发明采用的技术方案是：一种半导体材料加工用切割胶带，包括基材层以及涂覆在所述基材层两侧的第一胶黏剂层和第二胶黏剂层，所述第一胶黏剂层和第二胶黏剂层所采用的胶黏剂选自A胶或B胶，其中：
A胶，按照重量份数计包括以下组分：丙烯酸异辛酯50-80份、丙烯酸羟乙酯2-7份、邻苯基苯氧乙基丙烯酸酯0-5份、乙氧基乙氧基丙烯酸酯0-5份、环三羟甲基丙烷甲缩醛丙烯酸酯0-5份、引发剂Ⅰ0.3-1份、溶剂100份、多官能团高分子树脂10-30份，其中多官能团高分子树脂选自二季戊四醇六丙烯酸酯、2摩尔己内酯改质双季戊四醇六丙烯酸酯、6摩尔己内酯改质双季戊四醇六丙烯酸酯中的至少一种；
B胶，按照重量份数计包括以下组分：丙烯酸正丁酯50-75份、丙烯酸异辛酯10-25份、丙烯酸羟乙酯1-5份、丙烯酸1-3份、冰片酯0-2份、引发剂Ⅱ0.3-1份、溶剂100份；
所述引发剂Ⅰ和引发剂Ⅱ均采用了偶氮类引发剂或过氧化物引发剂。
作为一种具体的实施方式，所述A胶的制备方法如下：按照重量份数将丙烯酸异辛酯、丙烯酸羟乙酯、邻苯基苯氧乙基丙烯酸酯、乙氧基乙氧基丙烯酸酯、环三羟甲基丙烷甲缩醛丙烯酸酯、引发剂Ⅰ及溶剂投加到反应釜中，加热至78-82℃，反应6-10h，而后降温至55℃±1℃，再混合多官能团高分子树脂搅匀后下料即可；B胶的制备方法如下：按照重量份数丙烯酸正丁酯、丙烯酸异辛酯、丙烯酸羟乙酯、丙烯酸、冰片酯、引发剂Ⅱ及溶剂投入到反应釜中，加热至78-82℃，反应6-10h，而后降温至55℃±1℃下料即可。
作为一种具体的实施方式，所述基材层采用了25μm的双面PET基材。
作为一种具体的实施方式，所述A胶按照重量份数计包括以下组分：丙烯酸异辛酯70-75份、丙烯酸羟乙酯3-5份、邻苯基苯氧乙基丙烯酸酯0-5份、乙氧基乙氧基丙烯酸酯0-5份、环三羟甲基丙烷甲缩醛丙烯酸酯0-5份、引发剂Ⅰ0.4-0.5份、溶剂100份、多官能团高分子树脂15-25份，其中邻苯基苯氧乙基丙烯酸酯、乙氧基乙氧基丙烯酸酯、环三羟甲基丙烷甲缩醛丙烯酸酯三者的投加量之和为3-8份。
作为一种具体的实施方式，所述2摩尔己内酯改质双季戊四醇六丙烯酸酯购自长兴材料工业股份有限公司生产的型号为EM2692的丙烯酸酯；6摩尔己内酯改质双季戊四醇六丙烯酸酯购自长兴材料工业股份有限公司生产的型号为EM2696的丙烯酸酯。
作为一种具体的实施方式，所述切割胶带包括基材层，所述基材层的一侧面涂布A胶，另一侧面涂布B胶，具体步骤如下：
1)A胶处理：取100份A胶，依次加入光引发剂、交联剂后加入溶剂进行稀释，配置成25％固含量的胶水，搅拌混合均匀，静置消泡；
2)B胶处理：取100份B胶，加入交联剂混合后加入溶剂进行稀释，配成25％固含量的胶水，待溶解完全后搅拌均匀；静置消泡；
3)涂布，采用刮刀式涂布，先在基材层的一面涂布经步骤2)处理的B胶并用轻离型膜覆膜，后再在重离型膜上涂布经步骤1)处理的A胶，并将胶面转到基材的另一面上。
作为一种具体的实施方式，步骤1)所采用的光引发剂选自光引发剂184、光引发剂TPO、光引发剂1173中的一种或多种。
由于上述技术方案的运用，本发明与现有技术相比具有下列优点：本发明的半导体材料加工用切割胶带，其胶黏剂层可采用A胶或B胶，A胶为采用丙烯酸异辛酯、丙烯酸羟乙酯、邻苯基苯氧乙基丙烯酸酯、乙氧基乙氧基丙烯酸酯、环三羟甲基丙烷甲缩醛丙烯酸酯及多官能团高分子树脂聚合得到UV型油性聚丙烯酸酯；B胶为采用丙烯酸正丁酯、丙烯酸异辛酯、丙烯酸羟乙酯、丙烯酸、冰片酯聚合得到非UV的油性聚丙烯酸酯，两者的剥离力均较低，涂有A胶的一侧面经UV照射后剥离力下降明显，便于剥离，且不会出现残胶。
具体实施方式
下面结合具体实施例来对本发明的技术方案作进一步的阐述。
一种半导体材料加工用切割胶带，包括基材层以及涂覆在所述基材层两侧的第一胶黏剂层和第二胶黏剂层，所述第一胶黏剂层和第二胶黏剂层所采用的胶黏剂选自A胶或B胶。
A胶，按照重量份数计包括以下组分：丙烯酸异辛酯50-80份、丙烯酸羟乙酯2-7份、邻苯基苯氧乙基丙烯酸酯0-5份、乙氧基乙氧基丙烯酸酯0-5份、环三羟甲基丙烷甲缩醛丙烯酸酯0-5份、多官能团高分子树脂10-30份、引发剂Ⅰ0.3-1份、溶剂100份，其中多官能团高分子树脂选自二季戊四醇六丙烯酸酯、2摩尔己内酯改质双季戊四醇六丙烯酸酯、6摩尔己内酯改质双季戊四醇六丙烯酸酯中的至少一种。
B胶，按照重量份数计包括以下组分：丙烯酸正丁酯50-75份、丙烯酸异辛酯10-25份、丙烯酸羟乙酯1-5份、丙烯酸1-3份、冰片酯0-2份、引发剂Ⅱ0.3-1份、溶剂100份；
所述引发剂Ⅰ和引发剂Ⅱ均采用了偶氮类引发剂或过氧化物引发剂。
以下实施例中，所采用的2摩尔己内酯改质双季戊四醇六丙烯酸酯购自长兴材料工业股份有限公司生产的型号为EM2692的丙烯酸酯(DP2CAHA)；6摩尔己内酯改质双季戊四醇六丙烯酸酯购自长兴材料工业股份有限公司生产的型号为EM2696的丙烯酸酯(DP6CAHA)。
实施例1
一种半导体材料加工用切割胶带，包括沿厚度方向依次设置的第一离型膜层、第一胶黏剂层、基材层、第二胶黏剂层、第二离型膜层，这里第一离型膜层和第二离型膜层均采用了38μmPET离型膜，基材层采用了25μm的双面电晕PET基材，第一胶黏剂层采用了20μm的A胶，第二胶黏剂层采用了20μm的B胶，第一离型层为重离型，第二离型层为轻离型。
具体的，A胶的制备过程如下：
按照重量份数将丙烯酸异辛酯(2-EHA)72份、丙烯酸羟乙酯(HEA)5份、邻苯基苯氧乙基丙烯酸酯(OPPEA)0份、环三羟甲基丙烷甲缩醛丙烯酸酯(CTFA)5份、引发剂偶氮二异丁酸二甲酯(V601)0.4份、乙酸乙酯(ETAC)100份投入到反应釜中，加热至78-82℃，反应6-10h，而后降温至55℃±1℃下料得到A胶。
B胶的制备过程如下：
按照重量份数丙烯酸正丁酯(BA)60份、丙烯酸异辛酯(2-EHA)20份、丙烯酸羟乙酯(HEA)1份、丙烯酸(AA)2份、甲基丙烯酸异冰片酯(IBOMA)1份、引发剂偶氮二异丁酸二甲酯0.4份及乙酸乙酯100份投入到反应釜中，加热至78-82℃，反应6-10h，而后降温至55℃±1℃下料即可。
切割胶带的制备过程如下：
1)A胶处理：取100份A胶，依次加入光引发剂、交联剂后加入溶剂进行稀释，配置成25％固含量的胶水，搅拌混合均匀，静置消泡；
2)B胶处理：取100份B胶，加入交联剂混合后加入溶剂进行稀释，配成25％固含量的胶水，待溶解完全后搅拌均匀；静置消泡；
3)涂布，采用刮刀式涂布，先在基材层的一面涂布经步骤2)处理的B胶并用轻离型膜覆膜，后再在重离型膜上涂布经步骤1)处理的A胶，并将胶面转到基材的另一面上。
这里交联剂采用了二异氰酸酯。
对上述制成的胶带进行性能检测：
1)胶带初粘力检测
检测仪器：电脑式拉压力试验机，型号KJ-1065A
方法：GB/T 2792《压敏胶黏带180°剥离强度试验方法》
2)胶带180°剥离力检测
测试仪器：智能电子拉力试验机
测试步骤如下：
21)接通拉力机电源，打开开关，开机后预热15min，将电脑上TM2101软件打开，测试前设置项中的试样资料选择为“剥离”，控制方案选择为“180°剥离”，试验速度300mm/min；
22)用无尘布蘸取酒精擦拭钢板，并立即用干净的无尘纸擦去残余酒精，确认钢板表面目视无污染后放入钢板架，放置至少10min以后可以使用(超过4h未使用的钢板应重新清洗)；
23)用标准取样器裁取标准测试样条(25mm*200mm)2组*3条；(无UV后剥离力测试需求时可只取3根样条)；
24)将测试样条上的离型膜揭开约100mm左右，胶面向下，用轻微枝指压样条一端约5mm贴于清洁的测试板上(如测试A胶性能则将第一离型膜层揭开，如测试B胶性能则将第二离型膜层揭开，样条一端应与钢板保持齐平且尽量使样条居中与测试钢板平行。用测试标准压辊匀速来回压至少2次，样条与钢板贴合长度保持在钢板长度的一半以上。使胶面与测试板表面紧密接触(不允许有气泡、皱褶、夹物等)在测试条贴合于测试板以后，放置20min后进行测试；
25)拉力机感应力清零后将试样自由端对折180°，把其中一组试样自由端和试验板分别夹在拉力机和下夹具上(此时感应力＜0.02N，不能再清零)，点击开始测试，每根样条测试完需备注钢板上残胶情况，以型号，批次，米数等信息保存试样测试结果；
26)另一组试样胶面朝下放入UV能量机中(一次最多放三个试样)，选择UV照射时间(钢板材质照射时间为为15～20S，PET材质照射时间为15～20S)，开始照射，照射后再按步骤25)完成测试；
27)全部试样测试完成后，导出剥离力(单位，N/25mm)数据。
涂有A胶的一侧胶黏剂层的原料组分见表1，其测试情况同见表1。
表1
这里，OK表示不残胶、无残留、不飞料、无渗水，反之则为NG。
从表1中我们可以看出，在其他组分相同的情况下，2-EHA、OPPEA对胶黏剂的影响不是很大，在原料中添加适量的DPHA、DP2CAHA和DP6CAHA能够使UV前有较高的剥离力且无残胶现象，UV后有较低的剥离力。
涂有B胶的一侧胶黏剂层的原料组分见表2，其测试情况同见表2。
表2
实施例1 实施例2 实施例3 实施例4 实施例5 实施例6
BA 60 70 68 10 39 48
2-EHA 20 10 10 68 39 30
HEA 1 1 2 2 2 2
AA 2 2 2 2 2 2
IBOMA 1 1 2 2 2 2
V601 0.4 0.4 0.3 0.3 0.3 0.3
ETAC 100 100 100 100 100 100
粘度 ≈500 ≈1200 ≈1500 ≈400 ≈1000 ≈1200
交联剂 1 2 2 1 2 2
剥离力 / NG OK / OK OK
残胶 NG NG OK NG OK OK
从表2中我们可以看出，少加交联剂会导致残留。
以下对实施例7中涂有A胶的一侧面在钢板和PET材质上的具体测试结果见表3。
表3
这里，初粘力的测试方法根据《GB/T 31125-2014胶粘带初粘性试验方法-环形法》进行测试。
从表3中针对涂布有实施例7中的A胶的一面进行了三组性能测试，从中可以看出，涂有A胶的一侧面经UV照射后剥离力下降极为明显，便于剥离。
实施例8中对涂有B胶的一侧面在钢板和玻璃材质上的测试结果见表4。
表4
从表4中，我们可以看出，B胶作为非UV的油性聚丙烯酸酯，其本身在钢板和玻璃上的剥离力不是很高。
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

Claims (6)

1.一种半导体材料加工用切割胶带，包括基材层以及涂覆在所述基材层两侧的第一胶黏剂层和第二胶黏剂层，其特征在于，所述第一胶黏剂层和第二胶黏剂层中一层所采用的胶黏剂为A胶，另一层所采用的胶黏剂为B胶，其中：
A胶，按照重量份数计包括以下组分：丙烯酸异辛酯50-80份、丙烯酸羟乙酯2-7份、邻苯基苯氧乙基丙烯酸酯0-5份、乙氧基乙氧基乙基丙烯酸酯0-5份、环三羟甲基丙烷甲缩醛丙烯酸酯0-5份、多官能团高分子树脂10-30份、引发剂Ⅰ0.3-1份、溶剂100份，其中多官能团高分子树脂选自二季戊四醇六丙烯酸酯、2摩尔己内酯改质双季戊四醇六丙烯酸酯、6摩尔己内酯改质双季戊四醇六丙烯酸酯中的至少一种, 所述2摩尔己内酯改质双季戊四醇六丙烯酸酯购自长兴材料工业股份有限公司生产的型号为EM2692的丙烯酸酯；6摩尔己内酯改质双季戊四醇六丙烯酸酯购自长兴材料工业股份有限公司生产的型号为EM2696的丙烯酸酯；
B胶，按照重量份数计包括以下组分：丙烯酸正丁酯50-75份、丙烯酸异辛酯10-25份、丙烯酸羟乙酯1-5份、丙烯酸1-3份、甲基丙烯酸异冰片酯0-2份、引发剂Ⅱ0.3-1份、溶剂100份；
所述引发剂Ⅰ和引发剂Ⅱ均采用了偶氮类引发剂或过氧化物引发剂。
2.根据权利要求1所述的半导体材料加工用切割胶带，其特征在于，所述A胶的制备方法如下：按照重量份数将丙烯酸异辛酯、丙烯酸羟乙酯、邻苯基苯氧乙基丙烯酸酯、乙氧基乙氧基乙基丙烯酸酯、环三羟甲基丙烷甲缩醛丙烯酸酯、引发剂Ⅰ及溶剂投加到反应釜中，加热至78-82℃，反应6-10h，而后降温至55℃±1℃下料，再加入多官能团高分子树脂即可；B胶的制备方法如下：按照重量份数丙烯酸正丁酯、丙烯酸异辛酯、丙烯酸羟乙酯、丙烯酸、甲基丙烯酸异冰片酯、引发剂Ⅱ及溶剂投入到反应釜中，加热至78-82℃，反应6-10h，而后降温至55℃±1℃下料即可。
3.根据权利要求1所述的半导体材料加工用切割胶带，其特征在于，所述基材层采用了25μm的双面PET基材。
4.根据权利要求1所述的半导体材料加工用切割胶带，其特征在于，所述A胶按照重量份数计包括以下组分：丙烯酸异辛酯70-75份、丙烯酸羟乙酯3-5份、邻苯基苯氧乙基丙烯酸酯0-5份、乙氧基乙氧基乙基丙烯酸酯0-5份、环三羟甲基丙烷甲缩醛丙烯酸酯0-5份、多官能团高分子树脂15-25份、引发剂Ⅰ0.4-0.5份、溶剂100份，其中邻苯基苯氧乙基丙烯酸酯、乙氧基乙氧基乙基丙烯酸酯、环三羟甲基丙烷甲缩醛丙烯酸酯三者的投加量之和为3-8份。
5.根据权利要求2所述的半导体材料加工用切割胶带，其特征在于，所述切割胶带包括基材层，所述基材层的一侧面涂布A胶，另一侧面涂布B胶，具体步骤如下：
1）A胶处理：取100份A胶，依次加入光引发剂、交联剂后加入溶剂进行稀释，配置成25%固含量的胶水，搅拌混合均匀，静置消泡；
2）B胶处理：取100份B胶，加入交联剂混合后加入溶剂进行稀释，配成25%固含量的胶水，待溶解完全后搅拌均匀；静置消泡；
3）涂布，采用刮刀式涂布，先在基材层的一面涂布经步骤2）处理的B胶并用轻离型膜覆膜，后再在重离型膜上涂布经步骤1）处理的A胶，并将胶面转到基材的另一面上。
6.根据权利要求5所述的半导体材料加工用切割胶带，其特征在于，步骤1）所采用的光引发剂选自光引发剂184、光引发剂TPO、光引发剂1173中的一种或多种。
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