CN1153174C - 芯片模块 - Google Patents
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Abstract
为了避免在热-熔化构成方法中在覆盖物和芯片之间分层,建议针对在芯片模块中从外部馈入的热流进行控制。根据本发明,这或者通过绝热层(9),它置放在芯片模块的可弯曲的支架纽带(2)和粘贴在此上的芯片(3)之间,或者通过在金属触点(10)的平面或表层范围内的空隙(11)实现,因此阻止了安放在金属触点(10)外部范围内的空心立柱(10)的热量流向安装在中心的芯片(3)的方向。
Description
本发明涉及的是在一个芯片卡的卡片基体中安装的芯片模块。
在先有技术中对芯片模块的了解已很多了。芯片卡的应用可能性是十分多样的,并且随计算容量和可使用的包含在其中的集成化电路的存储容量的升高而增多,然而也因此出现了必须安装的集成电路(电子元件、芯片)的增多。
通过多个特征确定芯片卡的构造,一部分特征是通过相应的标准预先确定的。例如,这涉及了关于紫外线、X射线的卡片负载能力,以及卡片体和电气接点的机械负载能力,或者涉及了热稳定性。
在大多数的芯片卡生产过程中,首先将芯片安装在可弯曲的薄膜上。在此薄膜上存在必要的卡片触点。然后由已安装完成的薄膜冲压成单一的芯片模块。此外,在卡片内间接通过模块的支架加固芯片。这具有防止芯片弯曲的优点。此时,芯片以它的背面安装在可弯曲的薄膜上。存在于它正面的电气连接面通过压焊导线与触点区连接,该触点区穿过可弯曲的薄膜与卡片触点连接。包括上述导线在内的芯片正面,在一般情况下,用一保护层,例如塑料壳防止腐蚀效应。上述结构是用标准外壳包装芯片的通常方法的一部分。
按照现有技术,通过三个基本工艺安装带有触点的芯片卡的芯片模块:
a)最新氰制冷(cyanacrylat)粘贴技术
b)热-熔化粘贴技术
c)接触-粘着粘贴技术
上述c)技术也称作压力传感粘贴。对此,通过机械压力在粘接层中产生的剪应力导致粘接剂的粘滞度降低,该粘接剂产生或改善了连接元件,例如卡片基体的物理接触。单层的热-熔化粘贴技术的实施例提供在德国公开文本DE36 39 630中。多层的最新氰制冷粘贴技术实施例提供在欧洲专利EP0 527 438中。
对于芯片卡的疲劳强度来说,在芯片模块和卡片体之间的连接质量是起决定性的。例如,如果把芯片模块置入一个在卡片体中铣出的凹处中并在那粘贴,例如如果使用了热-熔化粘接剂,因此这可以基本借助温度负载连结。
对于芯片模块,理解成一芯片支架,在触点一面上它有8个触点。在对面上安置一半导体芯片,它存在于芯片卡的这些触点之间,也就是说侧面看上去,它直接位于对面。这种芯片模块可从US4625102和FR2617668中可知。在最新氰制冷和接触-粘着粘贴技术配合低的过程温度用于模块安装时,而热-熔化粘贴技术的重要特征是相对高的安装温度。通常温度在200℃至250℃范围内。在持续不到1.5秒的芯片植入期间,在这个方法中高的热能馈入芯片模块中。此外,不仅加热粘接剂层,它使芯片和卡片基体相连接,而且加热芯片支架元件、半导体芯片和覆盖物。与此同时考虑芯片模块的结构包含的由不同原料形成的多个构件。因此,按照US4625102使用可弯曲的薄膜、支架可以包括环氧树脂。在一面上所具有的触点是由金属组成的,半导体芯片由晶体组成,例如硅,压焊导线由金属组成,预先规定于芯片正面的覆盖物由塑料组成。如果这个装置承受较大的温度变化,那么,结果是所谓的分层,也就是说相互之间的层分开。在上述方法的芯片模块中,在芯片和支架之间的连接,一般情况是粘接,是不加苛求的。可是在模块较长的储存时间和运输时间之后,所说的装置的短时加热导致在覆盖物中局部的损坏,它被称作分层。在芯片和覆盖物之间的分层可能导致功能缺陷或芯片模块脱落。原因在于,在这个范围内分层伴随着导电体的中断,导电体也就是压焊导线,通过它芯片与外部触点连接。在卡片体中用于粘贴芯片模块的上述热-熔化方法兼有一相应的芯片模块的高热负荷。
在紫外线光的情况下硬化的覆盖物特别容易分层。对此,原因是在芯片模块的整个装置中的热感应产生的压力。这个压力存在是因为在半导体芯片、芯片支架元件和覆盖物之间的热膨胀失调。与此有关的热膨胀系数在相同的温度范围内是2.5∶10∶18。分层产生的概率伴随着半导体芯片的扩大,与运输时间和存放时间的增加而升高。在上述时间中,覆盖物从大气中吸收水分,它导致材料膨胀,也称作泡胀。覆盖物的泡胀和当在卡片基体中安装时模块的短时强热是在安装后造成高废品率的原因。这特别是在这样的芯片模块上的情况,该芯片模块具有较大面积的芯片。这样的芯片称作微控制器和/或密码控制器。
消除了先有技术水平的缺点的到目前为止的措施在于发展、选择、试验覆盖物,它具有较小的水分吸收,以及在措施中它导致了覆盖物的粘着力的增强,例如芯片支架上表面较高的粗糙度。例如如此使用覆盖物,其具有增附剂(硅烷/硅氧烷为基础)。
本发明的目的在于,提供一个安装在芯片卡中的芯片模块,在这个芯片模块上,在芯片模块和卡片体之间的连接方法,阻止了覆盖物和具有为此而产生的芯片模块的功能损失的电子元件之间的分层。
这个目的是通过具有权利要求1或4的特征的芯片模块实现的。
为了在芯片卡的卡片体中安装一个芯片模块,在不同的方法中,必须从外部引入一确定的热量。这是通过外部的,例如在一立柱中产生的热量实现的,通过把立柱放置到芯片模块上热量被传导进芯片模块。在这个位置或平面上,引进的热量使温度升高而达到此目的,即在它上面例如产生了在芯片模块的支架和卡片体之间的粘贴连接。传导到芯片模块其它范围内的热量应当被减小到最低限度。由于在粘贴连接产生的情况下,把散发热量的空心立柱放置在触点上,该触点布置在可弯曲的薄膜上,以此热量馈入芯片模块中,可是不可能阻止主要的热量向芯片的方向传导。由于覆盖物的传热性能较小,该覆盖物同样与可弯曲的支架薄膜接触,大部分被引入的热量从可弯曲的支架薄膜通过粘接剂层进入芯片。这不仅导致了芯片发热,而且导致了在芯片和覆盖物之间的触点区域的分层。
为了防止这些缺陷,在粘接剂层和芯片之间引进一绝热层。本目的的其它解决方法提供在金属触点之间的可选空隙,在触点上放上用于导热的空心立柱。在芯片和粘接剂层之间绝热层的使用防止在模块内部向芯片方向传热,绝热层使芯片和模块连接起来,因此,在金属触点中的空隙防止了侧面的,也就是在金属触点表面上的导热。当在芯片模块的外部范围内把近似环形的空心立柱放在金属触点上之后,在芯片模块的支架的相对面上的芯片差不多同心地安置在金属触点上,芯片也位于内部范围,相关地考虑空心立柱。明显地以此为出发点,垂直穿过平面构成的模块的热流要求用于产生热-熔化粘贴。在金属触点范围内的空隙是如此安放的,在导电触点内部传导的热进入内部并平行引到平面构成的模块,禁止通过已引入的空隙。因此,在短暂的热-熔化安装期间,通过有益的措施阻止了芯片模块透热。因此在相应的方向上部分地中断金属触点层,该触点具有良好的导热性能。在芯片模块内侧存在的环氧-玻璃纤维连接层具有低了几个数量级的热传导性能,因此,关于上面所述的目标的确定,这层没有意义。空隙一般情况下是长形孔,这是为了在空心立柱的轮廓内部制造一相应宽的热屏障。
有利的实施形式在从属权利要求中给出。
下面根据简图说明各实施例。
图1所示为在一个卡片体内安装一芯片模块时空心立柱的相应定位的截面剖视图,
图2所示为根据图1在可弯曲的支架薄膜和芯片之间附加的绝热层的描述,
图3所示为芯片模块的剖视图,在金属触点1 0的表层的范围内存在空隙11,
图4所示为金属触点上的平面图,表明了空隙和芯片的轮廓。
借助本发明,当在卡片体中安装具有金小岛(Goldinsel)的模块时,在热-熔化安装过程中可以避免芯片范围内覆盖物的分层。在热-熔化安装过程中,借助于空心立柱1,它具有例如200℃的相对高温,在力的作用下通过相应的时间调整,芯片模块根据图1粘贴在卡片体上。在此,图1详细指出了空心立柱,它被放在芯片模块的可弯曲的支架纽带2上。因为朝外的明显金属触点定位在这个位置,所以空心立柱1放在这上面。朝里,芯片模块具有一粘接剂层8,借助它芯片3定位在支架纽带2上并可弯曲。加固框架4同样安排在支架纽带2上并且围绕芯片。覆盖物51保护芯片3,并保护由于腐蚀与外部机械的影响而引到触点的芯片的电连接。借助热-熔化粘接剂6芯片模块粘贴在卡片体7内。
为了消除存在于图1中的可能性,即主要的热能从空心立柱1通过支架纽带2和粘接剂8直接流入芯片3中,在与图1相符的图2的说明中附加引入一绝热层9。因此防止了芯片(例如硅)、覆盖物和可弯曲的支架纽带的不同的热膨胀系数的影响,也防止了在高温情况下通过强大的热力学的动力产生的损坏。当高温被引入整个系统时,例如在芯片模块的安装过程中产生这个力。这可能导致分层。此时覆盖物可能与芯片脱离,例如通过在芯片和外部触点间的导电体的损坏造成模块的功能下降。
通过在芯片背面上叠放一聚酰亚胺层,可以消除分层的出现。聚酰亚胺具有低的导热系数,因此聚酰亚胺可以作为热屏障使用。因此,芯片3和覆盖物5之间的热力学力减小了。在这期间,为了产生连接,用于粘贴所必需的加热立柱1的热量流入热-熔化粘接剂6。在晶片加工中聚酰亚胺叠放在圆片背面。聚酰亚胺的热导率如此小,以致仅10μm厚的聚酰亚胺层就足够用了,正如初步实验表明的。
根据表明热导率的材料参数,绝热层9有利地是聚酰亚胺层。可是,使用其它的热绝缘体完全是可能的。由于在晶体加工中聚酰亚胺可以简单的方式叠放在晶片的背面,因此这个材料的选择是非常有利的。
图3中描述的是一芯片模块,并连接一已放上的空心立柱1。支架纽带2在一面上具有金属触点10,此外,对面大约中心位置安置了芯片3。覆盖物52保护芯片3的作用面以及它的与金属触点10的结合处。借助于空隙11,阻止侧面的图中所指一侧的热流从空心立柱1进入芯片方向是显而易见的。且不妨碍在截面中从上向下对准的空心立柱1的热流通过金属触点10并且通过支架纽带2。
图4描述了芯片卡的当时普遍的触点。金属触点10主要被安置在两个与芯片3相对的排上。芯片轮廓12表明了芯片3的中心位置。空心立柱1的内轮廓13和空心立柱1的外轮廓14形成了同心交错存在的矩形。形成为长孔的空隙在这个位置,在这个位置总归不能预先规定在金属层中存在于单个金属触点10的周围的断路,防止了热量流向内部,也就是朝着芯片3的方向。芯片安装在空隙11的对面。
本发明不仅应用于具有金小岛的模块,也应用于不具有这样金小岛的其它模块。
Claims (4)
1.在一个芯片卡的卡片基体(7)中安装的芯片模块,包括:
—一个具有良好的导热性能的可弯曲的支架纽带(2),
—在支架纽带(2)的一面上带有的平面的金属触点(10),
—至少一个位于支架纽带(2)的与触点相对的面上的电子元件(3),它与触点电连接,
—在支架钮带(2)上的一个预先确定的平面,通过它芯片模块可以与卡片基体(7)相连接,
其特征在于,
在电子元件(3)和支架钮带(2)之间存在一绝热层。
2.根据权利要求1的芯片模块,其特征在于,该绝热层(9)由聚酰亚胺组成。
3.根据权利要求2的芯片模块,其特征在于,聚酰亚胺层有10μm厚。
4.在一个芯片卡的卡片基体(7)中安装的芯片模块,包括:
—一个可弯曲的支架纽带(2),
—在支架纽带的一面上带有的平面的,以两排平行设置的金属触点(10),其中,一个接触面与一个位于接触排之间设置的金属表面为一体,
—至少一个位于支架纽带(2)的与触点相对的面上的电子元件(3),它与触点电连接,
—在支架纽带(2)上的一个预先确定的平面,通过它芯片模块可以与卡片基体(7)相连接,
其特征在于:
在金属表面范围内含有垂直于触点排(10)延伸的空隙(11),它阻止了安放在金属触点(10)和金属平面的外部范围内的空心立柱(1)的热量向安装在中心的电子元件(3)的方向流动。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE19535989A DE19535989C3 (de) | 1995-09-27 | 1995-09-27 | Chipmodul |
DE19535989.5 | 1995-09-27 |
Publications (2)
Publication Number | Publication Date |
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CN1198229A CN1198229A (zh) | 1998-11-04 |
CN1153174C true CN1153174C (zh) | 2004-06-09 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CNB961972394A Expired - Lifetime CN1153174C (zh) | 1995-09-27 | 1996-09-12 | 芯片模块 |
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EP (1) | EP0852774B1 (zh) |
JP (1) | JP3199747B2 (zh) |
KR (1) | KR100438876B1 (zh) |
CN (1) | CN1153174C (zh) |
AT (1) | ATE176537T1 (zh) |
DE (2) | DE19535989C3 (zh) |
ES (1) | ES2128872T3 (zh) |
IN (1) | IN188648B (zh) |
RU (1) | RU2145732C1 (zh) |
UA (1) | UA44809C2 (zh) |
WO (1) | WO1997012341A1 (zh) |
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DE19602436B4 (de) * | 1996-01-24 | 2006-09-14 | Infineon Technologies Ag | Verfahren zur Montage eines Rahmens auf ein Trägermaterial und Vorrichtung zur Durchführung des Verfahrens |
DE19731737A1 (de) * | 1997-07-23 | 1998-09-17 | Siemens Ag | Chipmodul für einen kartenförmigen Datenträger, entsprechender Kartenkörper sowie Verfahren zur Befestigung des Chipmoduls im Kartenkörper |
DE102005032489B3 (de) * | 2005-07-04 | 2006-11-16 | Schweizer Electronic Ag | Leiterplatten-Mehrschichtaufbau mit integriertem elektrischem Bauteil und Herstellungsverfahren |
DE102006060411B3 (de) * | 2006-12-20 | 2008-07-10 | Infineon Technologies Ag | Chipmodul und Verfahren zur Herstellung eines Chipmoduls |
DE102007048237A1 (de) * | 2007-10-08 | 2009-04-09 | Giesecke & Devrient Gmbh | Chipmodul für Chipkarte |
DE102013106181A1 (de) * | 2013-06-13 | 2014-12-18 | Bundesdruckerei Gmbh | Chipkarte und Verfahren zum Herstellen einer Chipkarte |
CN112216622B (zh) * | 2019-07-10 | 2022-09-30 | 广东精毅科技股份有限公司 | 一种用冷胶粘贴芯片的装置及其工作方法 |
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EP0128822B1 (fr) * | 1983-06-09 | 1987-09-09 | Flonic S.A. | Procédé de fabrication de cartes à mémoire et cartes obtenues suivant ce procédé |
DE3639630A1 (de) * | 1986-11-20 | 1988-06-01 | Gao Ges Automation Org | Datentraeger mit integriertem schaltkreis und verfahren zur herstellung desselben |
FR2617668B1 (fr) * | 1987-07-03 | 1995-07-07 | Radiotechnique Compelec | Dispositif comportant un circuit electronique monte sur un support souple et carte souple le comprenant |
FR2626846B1 (fr) * | 1988-02-04 | 1990-06-15 | Saint Gobain Vitrage | Dispositif de manutention d'articles en feuilles |
FR2639763B1 (fr) * | 1988-11-29 | 1992-12-24 | Schlumberger Ind Sa | Procede de realisation d'un module electronique et module electronique tel qu'obtenu par ce procede |
FR2645680B1 (fr) * | 1989-04-07 | 1994-04-29 | Thomson Microelectronics Sa Sg | Encapsulation de modules electroniques et procede de fabrication |
DE4232625A1 (de) * | 1992-09-29 | 1994-03-31 | Siemens Ag | Verfahren zur Montage von integrierten Halbleiterschaltkreisen |
DE4325458A1 (de) * | 1993-07-29 | 1995-02-09 | Orga Bond Technik Gmbh | Trägerelement für einen IC-Baustein |
DE4325712C2 (de) * | 1993-07-30 | 1996-03-21 | Siemens Ag | Verfahren zum Verkapseln von elektrischen oder elektronischen Bauelementen oder Baugruppen und Verkapselung von elektrischen oder elektronischen Bauelementen oder Baugruppen |
DE4427309C2 (de) * | 1994-08-02 | 1999-12-02 | Ibm | Herstellung eines Trägerelementmoduls zum Einbau in Chipkarten oder andere Datenträgerkarten |
DE4443767A1 (de) * | 1994-12-08 | 1996-06-13 | Giesecke & Devrient Gmbh | Elektronisches Modul und Datenträger mit elektrischem Modul |
-
1995
- 1995-09-27 DE DE19535989A patent/DE19535989C3/de not_active Expired - Fee Related
-
1996
- 1996-08-27 IN IN1524CA1996 patent/IN188648B/en unknown
- 1996-09-12 JP JP51305497A patent/JP3199747B2/ja not_active Expired - Lifetime
- 1996-09-12 ES ES96929186T patent/ES2128872T3/es not_active Expired - Lifetime
- 1996-09-12 CN CNB961972394A patent/CN1153174C/zh not_active Expired - Lifetime
- 1996-09-12 KR KR10-1998-0702027A patent/KR100438876B1/ko not_active IP Right Cessation
- 1996-09-12 RU RU98107842A patent/RU2145732C1/ru not_active IP Right Cessation
- 1996-09-12 EP EP96929186A patent/EP0852774B1/de not_active Expired - Lifetime
- 1996-09-12 AT AT96929186T patent/ATE176537T1/de not_active IP Right Cessation
- 1996-09-12 WO PCT/DE1996/001725 patent/WO1997012341A1/de active IP Right Grant
- 1996-09-12 UA UA98031575A patent/UA44809C2/uk unknown
- 1996-09-12 DE DE59601281T patent/DE59601281D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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UA44809C2 (uk) | 2002-03-15 |
WO1997012341A1 (de) | 1997-04-03 |
RU2145732C1 (ru) | 2000-02-20 |
IN188648B (zh) | 2002-10-26 |
DE59601281D1 (de) | 1999-03-18 |
ATE176537T1 (de) | 1999-02-15 |
CN1198229A (zh) | 1998-11-04 |
JP3199747B2 (ja) | 2001-08-20 |
EP0852774B1 (de) | 1999-02-03 |
DE19535989C2 (de) | 1997-07-17 |
ES2128872T3 (es) | 1999-05-16 |
EP0852774A1 (de) | 1998-07-15 |
KR100438876B1 (ko) | 2004-07-16 |
DE19535989C3 (de) | 2003-03-27 |
KR19990063588A (ko) | 1999-07-26 |
JPH10512380A (ja) | 1998-11-24 |
DE19535989A1 (de) | 1997-04-03 |
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