CN115315818B - 电磁波检测器、电磁波检测器阵列以及电磁波检测器的制造方法 - Google Patents

电磁波检测器、电磁波检测器阵列以及电磁波检测器的制造方法 Download PDF

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Publication number
CN115315818B
CN115315818B CN202080098843.3A CN202080098843A CN115315818B CN 115315818 B CN115315818 B CN 115315818B CN 202080098843 A CN202080098843 A CN 202080098843A CN 115315818 B CN115315818 B CN 115315818B
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electromagnetic wave
wave detector
electrode
semiconductor substrate
control electrode
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Chinese (zh)
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CN115315818A (zh
Inventor
奥田聪志
小川新平
福岛昌一郎
岛谷政彰
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN202080098843.3A 2020-03-27 2020-03-27 电磁波检测器、电磁波检测器阵列以及电磁波检测器的制造方法 Active CN115315818B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/014284 WO2021192296A1 (ja) 2020-03-27 2020-03-27 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法

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CN115315818A CN115315818A (zh) 2022-11-08
CN115315818B true CN115315818B (zh) 2025-02-25

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US (1) US20230057648A1 (https=)
JP (1) JP7431400B2 (https=)
CN (1) CN115315818B (https=)
WO (1) WO2021192296A1 (https=)

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WO2023097598A1 (zh) * 2021-12-02 2023-06-08 京东方科技集团股份有限公司 光电传感器和基板
WO2025046162A1 (en) * 2023-08-25 2025-03-06 Aalto University Foundation Sr Spectrometer
CN119421511B (zh) * 2025-01-02 2025-05-30 国科大杭州高等研究院 一种PbSe薄膜肖特基结探测器、制备方法及其应用

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CN105679857A (zh) * 2016-01-20 2016-06-15 浙江大学 一种基于硅量子点/石墨烯/硅异质结构的光电传感器

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KR101479395B1 (ko) * 2013-03-08 2015-01-05 경희대학교 산학협력단 그래핀-부도체-반도체의 구조를 갖는 투과 다이오드, 투과 트랜지스터, 투과 광다이오드 및 투과 광트랜지스터
US12538537B2 (en) * 2014-12-23 2026-01-27 Kyocera Sld Laser, Inc. Manufacturable gallium containing electronic devices
US9900539B2 (en) * 2015-09-10 2018-02-20 Canon Kabushiki Kaisha Solid-state image pickup element, and image pickup system
KR101938934B1 (ko) * 2016-03-02 2019-04-10 광주과학기술원 이득조절이 가능한 그래핀-반도체 쇼트키 접합 광전소자
WO2018012076A1 (ja) * 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
US10121926B2 (en) * 2016-08-22 2018-11-06 Shahid Rajaee Teacher Training University Graphene-based detector for W-band and terahertz radiations
JP6918591B2 (ja) * 2017-06-16 2021-08-11 株式会社豊田中央研究所 電磁波検出器およびその製造方法
CN108155267B (zh) * 2017-12-08 2019-09-13 浙江大学 一种基于肖特基-mos混合结构的光致负阻器件
CN108281454B (zh) * 2018-01-29 2021-01-19 杭州紫元科技有限公司 一种基于二维材料薄膜/绝缘层/半导体结构的电荷耦合器件
US20190305157A1 (en) * 2018-04-02 2019-10-03 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Photodetector
KR20220030939A (ko) * 2019-07-12 2022-03-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 광 검출 장치

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
CN104393093A (zh) * 2014-11-13 2015-03-04 北京工业大学 应用石墨烯的高探测率氮化镓基肖特基型紫外探测器
CN105679857A (zh) * 2016-01-20 2016-06-15 浙江大学 一种基于硅量子点/石墨烯/硅异质结构的光电传感器

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WO2021192296A1 (ja) 2021-09-30
JP7431400B2 (ja) 2024-02-15
CN115315818A (zh) 2022-11-08
JPWO2021192296A1 (https=) 2021-09-30
US20230057648A1 (en) 2023-02-23

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