JP7431400B2 - 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法 - Google Patents

電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法 Download PDF

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JP7431400B2
JP7431400B2 JP2022510394A JP2022510394A JP7431400B2 JP 7431400 B2 JP7431400 B2 JP 7431400B2 JP 2022510394 A JP2022510394 A JP 2022510394A JP 2022510394 A JP2022510394 A JP 2022510394A JP 7431400 B2 JP7431400 B2 JP 7431400B2
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electromagnetic wave
wave detector
electrode
semiconductor substrate
control electrode
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JPWO2021192296A5 (https=
JPWO2021192296A1 (https=
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聡志 奥田
新平 小川
昌一郎 福島
政彰 嶋谷
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2022510394A 2020-03-27 2020-03-27 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法 Active JP7431400B2 (ja)

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PCT/JP2020/014284 WO2021192296A1 (ja) 2020-03-27 2020-03-27 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法

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JPWO2021192296A1 JPWO2021192296A1 (https=) 2021-09-30
JPWO2021192296A5 JPWO2021192296A5 (https=) 2022-10-05
JP7431400B2 true JP7431400B2 (ja) 2024-02-15

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US (1) US20230057648A1 (https=)
JP (1) JP7431400B2 (https=)
CN (1) CN115315818B (https=)
WO (1) WO2021192296A1 (https=)

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Publication number Priority date Publication date Assignee Title
WO2023097598A1 (zh) * 2021-12-02 2023-06-08 京东方科技集团股份有限公司 光电传感器和基板
WO2025046162A1 (en) * 2023-08-25 2025-03-06 Aalto University Foundation Sr Spectrometer
CN119421511B (zh) * 2025-01-02 2025-05-30 国科大杭州高等研究院 一种PbSe薄膜肖特基结探测器、制备方法及其应用

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US20170256667A1 (en) 2016-03-02 2017-09-07 Gwangju Institute Of Science And Technology Graphene-semiconductor schottky junction photodetector of having tunable gain
CN108155267A (zh) 2017-12-08 2018-06-12 浙江大学 一种基于肖特基-mos混合结构的光致负阻器件
JP2019002852A (ja) 2017-06-16 2019-01-10 株式会社豊田中央研究所 電磁波検出器およびその製造方法

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KR101479395B1 (ko) * 2013-03-08 2015-01-05 경희대학교 산학협력단 그래핀-부도체-반도체의 구조를 갖는 투과 다이오드, 투과 트랜지스터, 투과 광다이오드 및 투과 광트랜지스터
CN104393093B (zh) * 2014-11-13 2017-02-01 北京工业大学 应用石墨烯的高探测率氮化镓基肖特基型紫外探测器
US12538537B2 (en) * 2014-12-23 2026-01-27 Kyocera Sld Laser, Inc. Manufacturable gallium containing electronic devices
US9900539B2 (en) * 2015-09-10 2018-02-20 Canon Kabushiki Kaisha Solid-state image pickup element, and image pickup system
CN105679857B (zh) * 2016-01-20 2017-03-22 浙江大学 一种基于硅量子点/石墨烯/硅异质结构的光电传感器
WO2018012076A1 (ja) * 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
US10121926B2 (en) * 2016-08-22 2018-11-06 Shahid Rajaee Teacher Training University Graphene-based detector for W-band and terahertz radiations
CN108281454B (zh) * 2018-01-29 2021-01-19 杭州紫元科技有限公司 一种基于二维材料薄膜/绝缘层/半导体结构的电荷耦合器件
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170256667A1 (en) 2016-03-02 2017-09-07 Gwangju Institute Of Science And Technology Graphene-semiconductor schottky junction photodetector of having tunable gain
JP2019002852A (ja) 2017-06-16 2019-01-10 株式会社豊田中央研究所 電磁波検出器およびその製造方法
CN108155267A (zh) 2017-12-08 2018-06-12 浙江大学 一种基于肖特基-mos混合结构的光致负阻器件

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
AMIRMAZLAGHANI, Mina et al.，Graphene-Si Schottky IR Detector，IEEE JOURNAL OF QUANTUM ELECTRONICS，2013年，VOL.49，pp.589-594
WANG, Xiaojuan et al.，Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon，Thin Solid Films，2015年06月25日，VOL.592，pp.281-286

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WO2021192296A1 (ja) 2021-09-30
CN115315818B (zh) 2025-02-25
CN115315818A (zh) 2022-11-08
JPWO2021192296A1 (https=) 2021-09-30
US20230057648A1 (en) 2023-02-23

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