JPWO2021192296A1 - - Google Patents
Info
- Publication number
- JPWO2021192296A1 JPWO2021192296A1 JP2022510394A JP2022510394A JPWO2021192296A1 JP WO2021192296 A1 JPWO2021192296 A1 JP WO2021192296A1 JP 2022510394 A JP2022510394 A JP 2022510394A JP 2022510394 A JP2022510394 A JP 2022510394A JP WO2021192296 A1 JPWO2021192296 A1 JP WO2021192296A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
Landscapes
- Light Receiving Elements (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/014284 WO2021192296A1 (ja) | 2020-03-27 | 2020-03-27 | 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021192296A1 true JPWO2021192296A1 (https=) | 2021-09-30 |
| JPWO2021192296A5 JPWO2021192296A5 (https=) | 2022-10-05 |
| JP7431400B2 JP7431400B2 (ja) | 2024-02-15 |
Family
ID=77891606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022510394A Active JP7431400B2 (ja) | 2020-03-27 | 2020-03-27 | 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230057648A1 (https=) |
| JP (1) | JP7431400B2 (https=) |
| CN (1) | CN115315818B (https=) |
| WO (1) | WO2021192296A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023097598A1 (zh) * | 2021-12-02 | 2023-06-08 | 京东方科技集团股份有限公司 | 光电传感器和基板 |
| WO2025046162A1 (en) * | 2023-08-25 | 2025-03-06 | Aalto University Foundation Sr | Spectrometer |
| CN119421511B (zh) * | 2025-01-02 | 2025-05-30 | 国科大杭州高等研究院 | 一种PbSe薄膜肖特基结探测器、制备方法及其应用 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170256667A1 (en) * | 2016-03-02 | 2017-09-07 | Gwangju Institute Of Science And Technology | Graphene-semiconductor schottky junction photodetector of having tunable gain |
| CN108155267A (zh) * | 2017-12-08 | 2018-06-12 | 浙江大学 | 一种基于肖特基-mos混合结构的光致负阻器件 |
| JP2019002852A (ja) * | 2017-06-16 | 2019-01-10 | 株式会社豊田中央研究所 | 電磁波検出器およびその製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101479395B1 (ko) * | 2013-03-08 | 2015-01-05 | 경희대학교 산학협력단 | 그래핀-부도체-반도체의 구조를 갖는 투과 다이오드, 투과 트랜지스터, 투과 광다이오드 및 투과 광트랜지스터 |
| CN104393093B (zh) * | 2014-11-13 | 2017-02-01 | 北京工业大学 | 应用石墨烯的高探测率氮化镓基肖特基型紫外探测器 |
| US12538537B2 (en) * | 2014-12-23 | 2026-01-27 | Kyocera Sld Laser, Inc. | Manufacturable gallium containing electronic devices |
| US9900539B2 (en) * | 2015-09-10 | 2018-02-20 | Canon Kabushiki Kaisha | Solid-state image pickup element, and image pickup system |
| CN105679857B (zh) * | 2016-01-20 | 2017-03-22 | 浙江大学 | 一种基于硅量子点/石墨烯/硅异质结构的光电传感器 |
| WO2018012076A1 (ja) * | 2016-07-12 | 2018-01-18 | 三菱電機株式会社 | 電磁波検出器及び電磁波検出器アレイ |
| US10121926B2 (en) * | 2016-08-22 | 2018-11-06 | Shahid Rajaee Teacher Training University | Graphene-based detector for W-band and terahertz radiations |
| CN108281454B (zh) * | 2018-01-29 | 2021-01-19 | 杭州紫元科技有限公司 | 一种基于二维材料薄膜/绝缘层/半导体结构的电荷耦合器件 |
| US20190305157A1 (en) * | 2018-04-02 | 2019-10-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Photodetector |
| KR20220030939A (ko) * | 2019-07-12 | 2022-03-11 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 광 검출 장치 |
-
2020
- 2020-03-27 CN CN202080098843.3A patent/CN115315818B/zh active Active
- 2020-03-27 US US17/793,655 patent/US20230057648A1/en active Pending
- 2020-03-27 JP JP2022510394A patent/JP7431400B2/ja active Active
- 2020-03-27 WO PCT/JP2020/014284 patent/WO2021192296A1/ja not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170256667A1 (en) * | 2016-03-02 | 2017-09-07 | Gwangju Institute Of Science And Technology | Graphene-semiconductor schottky junction photodetector of having tunable gain |
| JP2019002852A (ja) * | 2017-06-16 | 2019-01-10 | 株式会社豊田中央研究所 | 電磁波検出器およびその製造方法 |
| CN108155267A (zh) * | 2017-12-08 | 2018-06-12 | 浙江大学 | 一种基于肖特基-mos混合结构的光致负阻器件 |
Non-Patent Citations (2)
| Title |
|---|
| AMIRMAZLAGHANI, MINA ET AL.: "Graphene-Si Schottky IR Detector", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 49, JPN6020022058, 2013, pages 589 - 594, XP011511927, ISSN: 0005212168, DOI: 10.1109/JQE.2013.2261472 * |
| WANG, XIAOJUAN ET AL.: "Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on sil", THIN SOLID FILMS, vol. 592, JPN6020022057, 25 June 2015 (2015-06-25), pages 281 - 286, XP055862406, ISSN: 0005212167 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021192296A1 (ja) | 2021-09-30 |
| JP7431400B2 (ja) | 2024-02-15 |
| CN115315818B (zh) | 2025-02-25 |
| CN115315818A (zh) | 2022-11-08 |
| US20230057648A1 (en) | 2023-02-23 |
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