JPWO2021256018A1 - - Google Patents
Info
- Publication number
- JPWO2021256018A1 JPWO2021256018A1 JP2022532298A JP2022532298A JPWO2021256018A1 JP WO2021256018 A1 JPWO2021256018 A1 JP WO2021256018A1 JP 2022532298 A JP2022532298 A JP 2022532298A JP 2022532298 A JP2022532298 A JP 2022532298A JP WO2021256018 A1 JPWO2021256018 A1 JP WO2021256018A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0204—Compact construction
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020104531 | 2020-06-17 | ||
| JP2020104531 | 2020-06-17 | ||
| PCT/JP2021/009596 WO2021256018A1 (ja) | 2020-06-17 | 2021-03-10 | 電磁波検出器および電磁波検出器集合体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021256018A1 true JPWO2021256018A1 (https=) | 2021-12-23 |
| JPWO2021256018A5 JPWO2021256018A5 (https=) | 2022-12-28 |
| JP7499857B2 JP7499857B2 (ja) | 2024-06-14 |
Family
ID=79267813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022532298A Active JP7499857B2 (ja) | 2020-06-17 | 2021-03-10 | 電磁波検出器および電磁波検出器集合体 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12295176B2 (https=) |
| JP (1) | JP7499857B2 (https=) |
| CN (1) | CN115803897A (https=) |
| WO (1) | WO2021256018A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7550854B2 (ja) * | 2020-06-15 | 2024-09-13 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器アレイ |
| DE102021206526A1 (de) * | 2021-06-24 | 2022-12-29 | Martin-Luther-Universität Halle-Wittenberg, Körperschaft des öffentlichen Rechts | Tunneldiode mit negativem differentiellen Widerstand und Verfahren zur Herstellung |
| WO2024100784A1 (ja) * | 2022-11-09 | 2024-05-16 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器集合体 |
| WO2025046162A1 (en) * | 2023-08-25 | 2025-03-06 | Aalto University Foundation Sr | Spectrometer |
| CN119364874B (zh) * | 2024-12-23 | 2025-07-29 | 国科大杭州高等研究院 | 一种基于微结构调控的钽镍硒中红外探测器及其应用 |
| CN120018476B (zh) * | 2025-02-24 | 2025-10-10 | 安徽大学 | 一种光驱动的频带可调电磁屏蔽装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015045629A (ja) * | 2013-04-26 | 2015-03-12 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器アレイ |
| JP2016025356A (ja) * | 2014-07-18 | 2016-02-08 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置 |
| US20170256667A1 (en) * | 2016-03-02 | 2017-09-07 | Gwangju Institute Of Science And Technology | Graphene-semiconductor schottky junction photodetector of having tunable gain |
| WO2019171622A1 (ja) * | 2018-03-06 | 2019-09-12 | 三菱電機株式会社 | 電磁波検出器及びそれを備えた電磁波検出器アレイ |
| WO2020003613A1 (ja) * | 2018-06-26 | 2020-01-02 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器アレイ |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014036002A1 (en) | 2012-08-28 | 2014-03-06 | Northeastern University | Tunable heterojunction for multifunctional electronics and photovoltaics |
| US9680038B2 (en) * | 2013-03-13 | 2017-06-13 | The Regents Of The University Of Michigan | Photodetectors based on double layer heterostructures |
| WO2018012076A1 (ja) * | 2016-07-12 | 2018-01-18 | 三菱電機株式会社 | 電磁波検出器及び電磁波検出器アレイ |
| US11296251B2 (en) | 2018-03-06 | 2022-04-05 | Mitsubishi Electric Corporation | Electromagnetic wave detector and electromagnetic wave detector array including the same |
-
2021
- 2021-03-10 JP JP2022532298A patent/JP7499857B2/ja active Active
- 2021-03-10 US US17/919,323 patent/US12295176B2/en active Active
- 2021-03-10 WO PCT/JP2021/009596 patent/WO2021256018A1/ja not_active Ceased
- 2021-03-10 CN CN202180038946.5A patent/CN115803897A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015045629A (ja) * | 2013-04-26 | 2015-03-12 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器アレイ |
| JP2016025356A (ja) * | 2014-07-18 | 2016-02-08 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置 |
| US20170256667A1 (en) * | 2016-03-02 | 2017-09-07 | Gwangju Institute Of Science And Technology | Graphene-semiconductor schottky junction photodetector of having tunable gain |
| WO2019171622A1 (ja) * | 2018-03-06 | 2019-09-12 | 三菱電機株式会社 | 電磁波検出器及びそれを備えた電磁波検出器アレイ |
| WO2020003613A1 (ja) * | 2018-06-26 | 2020-01-02 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器アレイ |
Also Published As
| Publication number | Publication date |
|---|---|
| US12295176B2 (en) | 2025-05-06 |
| US20230282759A1 (en) | 2023-09-07 |
| JP7499857B2 (ja) | 2024-06-14 |
| CN115803897A (zh) | 2023-03-14 |
| WO2021256018A1 (ja) | 2021-12-23 |
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