WO2021256018A1 - 電磁波検出器および電磁波検出器集合体 - Google Patents

電磁波検出器および電磁波検出器集合体 Download PDF

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Publication number
WO2021256018A1
WO2021256018A1 PCT/JP2021/009596 JP2021009596W WO2021256018A1 WO 2021256018 A1 WO2021256018 A1 WO 2021256018A1 JP 2021009596 W JP2021009596 W JP 2021009596W WO 2021256018 A1 WO2021256018 A1 WO 2021256018A1
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Prior art keywords
electromagnetic wave
dimensional material
material layer
wave detector
layer
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English (en)
French (fr)
Japanese (ja)
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新平 小川
政彰 嶋谷
昌一郎 福島
聡志 奥田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2022532298A priority Critical patent/JP7499857B2/ja
Priority to CN202180038946.5A priority patent/CN115803897A/zh
Priority to US17/919,323 priority patent/US12295176B2/en
Publication of WO2021256018A1 publication Critical patent/WO2021256018A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction

Definitions

  • This disclosure relates to an electromagnetic wave detector and an assembly of electromagnetic wave detectors.
  • Graphene which is an example of a two-dimensional material layer, is known as a material for an electromagnetic wave detection layer used in a next-generation electromagnetic wave detector.
  • Graphene has extremely high mobility.
  • the absorption rate of graphene is as low as 2.3%. Therefore, a method for increasing the sensitivity of an electromagnetic wave detector using graphene as a two-dimensional material layer has been proposed.
  • US Patent Application Publication No. 2015/0243826 proposes a detector having the following structure. That is, in US Patent Application Publication No. 2015/0243826, two or more dielectric layers are provided on the n-type semiconductor layer. A graphene layer is formed on the two dielectric layers and on the surface portion of the n-type semiconductor layer located between the two dielectric layers. Source / drain electrodes connected to both ends of the graphene layer are arranged on the dielectric layer. The gate electrode is connected to the n-type semiconductor layer.
  • the detector detects an electromagnetic wave having a large energy equal to or larger than the difference between the Fermi level of the graphene layer and the Fermi level of the n-type semiconductor layer in contact with the graphene layer.
  • the detector electromagnetic wave detector
  • the fermi level of the graphene layer two-dimensional material layer
  • an appropriate Schottky barrier may not be formed depending on the film formation state of the graphene layer. Therefore, the detector may not be able to detect the electromagnetic wave to be detected by the detector.
  • the present disclosure has been made in view of the above problems, and an object thereof is to provide an electromagnetic wave detector and an electromagnetic wave detector aggregate capable of changing the Fermi level of a two-dimensional material layer.
  • the electromagnetic wave detector of the present disclosure includes a semiconductor layer, a first insulating film, a two-dimensional material layer, a first electrode, a second electrode, a second insulating film, and a control electrode.
  • the first insulating film is arranged on the semiconductor layer. An opening is formed in the first insulating film.
  • the two-dimensional material layer is electrically connected to the semiconductor layer at the opening.
  • the two-dimensional material layer extends from the opening to the first insulating film.
  • the first electrode is electrically connected to the two-dimensional material layer.
  • the second electrode is electrically connected to the semiconductor layer.
  • the second insulating film is in contact with the two-dimensional material layer.
  • the control electrode is connected to the two-dimensional material layer via the second insulating film.
  • the fermi level of the two-dimensional material layer can be changed.
  • FIG. 1 shows roughly the 1st structure of the electromagnetic wave detector which concerns on Embodiment 1.
  • FIG. It is a top view which shows typically the 1st structure of the electromagnetic wave detector which concerns on Embodiment 1.
  • FIG. 3 is a top view schematically showing a second configuration of the electromagnetic wave detector according to the first embodiment. It is sectional drawing which shows schematic the 3rd structure of the electromagnetic wave detector which concerns on Embodiment 1.
  • FIG. It is sectional drawing which shows schematic the 4th structure of the electromagnetic wave detector which concerns on Embodiment 1.
  • FIG. It is a band diagram which shows the Fermi level of a two-dimensional material layer and the Fermi level of a semiconductor layer in a state where a Schottky barrier is formed.
  • FIG. 1 The first configuration of the electromagnetic wave detector according to the third embodiment is schematically shown, and it is an enlarged view of the region corresponding to the IX region of FIG.
  • the second configuration of the electromagnetic wave detector according to the third embodiment is schematically shown, and is a top view corresponding to FIG. 9.
  • a third configuration of the electromagnetic wave detector according to the third embodiment is schematically shown, and is a top view corresponding to FIG. 9.
  • FIG. 3 is a top view schematically showing the configuration of the electromagnetic wave detector according to the fifth embodiment. It is a top view which shows schematic the structure of the electromagnetic wave detector which concerns on Embodiment 6. It is sectional drawing which shows schematic the structure of the electromagnetic wave detector which concerns on Embodiment 7. It is sectional drawing which shows schematic the structure of the electromagnetic wave detector which concerns on Embodiment 8. It is sectional drawing which shows schematic the structure of the electromagnetic wave detector which concerns on Embodiment 9. FIG. FIG. FIG.
  • FIG. 3 is a top view schematically showing the configuration of the electromagnetic wave detector according to the ninth embodiment. It is sectional drawing which shows schematic the structure of the electromagnetic wave detector which concerns on 1st modification of Embodiment 9. It is sectional drawing which shows schematic the structure of the electromagnetic wave detector which concerns on the 2nd modification of Embodiment 9. It is a top view schematically showing the structure of the electromagnetic wave detector which concerns on the 2nd modification of Embodiment 9. It is sectional drawing which shows schematic the structure of the electromagnetic wave detector which concerns on the 3rd modification of Embodiment 9.
  • FIG. 3 is a top view schematically showing a configuration of an electromagnetic wave detector according to a third modification of the ninth embodiment.
  • FIG. 3 is a top view schematically showing the configuration of the electromagnetic wave detector according to the tenth embodiment.
  • FIG. 3 is a top view schematically showing the configuration of a plurality of openings of the electromagnetic wave detector according to the tenth embodiment.
  • FIG. 3 is a top view schematically showing another configuration of a plurality of openings of the electromagnetic wave detector according to the tenth embodiment.
  • FIG. It is sectional drawing which shows schematic the structure of the electromagnetic wave detector which concerns on Embodiment 12.
  • FIG. 5 is a cross-sectional view schematically showing a configuration of an electromagnetic wave detector, a pad, a bump, and a readout circuit among a plurality of electromagnetic wave detectors included in the electromagnetic wave detector aggregate according to the sixteenth embodiment. It is a top view schematically showing the structure of the electromagnetic wave detector aggregate which concerns on the modification of Embodiment 16. It is a top view which shows schematic the structure of the electromagnetic wave detector which concerns on Embodiment 17. It is a top view which shows schematic the structure of the electromagnetic wave detector which concerns on the 1st modification of Embodiment 17. It is a top view schematically showing the structure of the electromagnetic wave detector which concerns on the 2nd modification of Embodiment 17.
  • the figure is schematic and conceptually describes the function or structure. Further, the present disclosure is not limited to the embodiments described below. Unless otherwise specified, the basic configuration of the electromagnetic wave detector is common to all embodiments. Further, those having the same reference numerals are the same or equivalent as described above. This is common to the entire text of the specification.
  • the configuration of the electromagnetic wave detector when detecting visible light or infrared light is described, but the light detected by the electromagnetic wave detector of the present disclosure is visible light or infrared light. Not limited.
  • the embodiments described below are also used as detectors for detecting radio waves such as X-rays, ultraviolet light, near-infrared light, terahertz (THz) waves, and microwaves in addition to visible light and infrared light. It is valid. In the embodiments of the present disclosure, these light and radio waves are collectively referred to as electromagnetic waves.
  • p-type graphene and n-type graphene may be used as graphene.
  • graphene having more holes than graphene in the true state is called p-type graphene
  • graphene having more electrons than graphene in the true state is called n-type graphene.
  • the electron is dominant is sometimes called n-type.
  • the hole becomes dominant is sometimes called p-type.
  • the material of the member in contact with graphene which is an example of the two-dimensional material layer, either one of organic substances and inorganic substances or a mixture of organic substances and inorganic substances may be used.
  • a plasmon resonance phenomenon such as a surface plasmon resonance phenomenon, which is an interaction between a metal surface and light, and a phenomenon called pseudo-surface plasmon resonance in the sense of resonance on a metal surface other than the visible light region and the near-infrared light region.
  • a plasmon resonance phenomenon such as a surface plasmon resonance phenomenon, which is an interaction between a metal surface and light
  • pseudo-surface plasmon resonance in the sense of resonance on a metal surface other than the visible light region and the near-infrared light region.
  • metamaterials or plasmonic metamaterials in the sense that the wavelength is manipulated by a structure with dimensions below the wavelength
  • these resonances are referred to as surface plasmon resonance, plasmon resonance, or simply resonance.
  • graphene is used as an example as the material of the two-dimensional material layer, but the material of the two-dimensional material layer is not limited to graphene.
  • the materials of the two-dimensional material layer include transition metal dichalcogenide (TMD), black phosphorus (Black Phosphorus), silicene (two-dimensional honeycomb structure with silicon atoms), and germanene (two-dimensional honeycomb structure with germanium atoms).
  • Etc. may be applied.
  • transition metal dichalcogenide include transition metal dichalcogenides such as molybdenum disulfide (MoS 2 ), tungsten disulfide (WS 2 ), and tungsten diselened (WSe 2 ).
  • These materials have a structure similar to graphene.
  • the atoms are arranged in a single layer in a two-dimensional plane. Therefore, even when these materials are applied to the two-dimensional material layer, the same action and effect as when graphene is applied to the two-dimensional material layer can be obtained.
  • an insulating layer is a layer of an insulating material having a thickness that does not generate a tunnel current.
  • a barrier layer is a layer of an insulator having a thickness at which a tunnel current is generated.
  • Embodiment 1 ⁇ Configuration of electromagnetic wave detector 100> The configuration of the electromagnetic wave detector 100 according to the first embodiment will be described with reference to FIGS. 1 to 5.
  • the electromagnetic wave detector 100 includes a two-dimensional material layer 1, a first electrode 2a, a second electrode 2b, a control electrode 2c, a first insulating film 3a, and a second insulating film 3b. And the semiconductor layer 4.
  • the first insulating film 3a is arranged on the semiconductor layer 4.
  • An opening OP is formed in the first insulating film 3a.
  • the semiconductor layer 4 is exposed from the first insulating film 3a at the opening OP. Therefore, the electromagnetic wave is applied to the semiconductor layer 4 through the opening OP.
  • the shape of the first insulating film 3a may be appropriately determined as long as the opening OP is provided.
  • the shape of the opening OP may be appropriately determined as long as the semiconductor layer 4 is exposed from the first insulating film 3a. At least one of the two-dimensional material layer 1 and the semiconductor layer 4 may be exposed from the opening OP. Therefore, the electromagnetic wave may be applied to the two-dimensional material layer 1 and the semiconductor layer 4 through the opening OP.
  • the shape of the first insulating film 3a may be a shape surrounded by the opening OP. Further, as shown in FIG. 3, the shape of the first insulating film 3a may be a shape surrounding the opening OP. As shown in FIG. 4, the first insulating film 3a may have a shape that covers the entire two-dimensional material layer 1.
  • the two-dimensional material layer 1 is electrically connected to the semiconductor layer 4 at the opening OP.
  • the two-dimensional material layer 1 extends from the opening OP to the first insulating film 3a.
  • the two-dimensional material layer 1 is selected from the group consisting of graphene, transition metal dichalcogenide (TMD), black phosphorus (Black Phosphorus), silicene (two-dimensional honeycomb structure with silicon atoms), graphene nanoribbons and borophene. Contains any of the materials that are used.
  • the material of the two-dimensional material layer 1 contains graphene, which will be described later.
  • the material of the two-dimensional material layer 1 is preferably a material that causes surface plasmon resonance.
  • the two-dimensional material layer 1 includes a first portion 1a, a second portion 1b, and a third portion 1c.
  • the first portion 1a is directly connected to the semiconductor layer 4.
  • the first portion 1a is arranged in the opening OP.
  • the electromagnetic wave applied to the electromagnetic wave detector 100 passes through the first portion 1a and is incident on the semiconductor layer 4.
  • the second portion 1b is arranged on the first insulating film 3a. As will be described later, a gap may be provided between the second portion 1b and the first insulating film 3a.
  • the third portion 1c is electrically connected to the first electrode 2a.
  • the third portion 1c is arranged on the first electrode 2a, but may be appropriately arranged as long as it is electrically connected to the first electrode 2a.
  • the first electrode 2a is arranged on the first insulating film 3a.
  • the first electrode 2a is connected to the semiconductor layer 4 via the first insulating film 3a.
  • the first electrode 2a is electrically connected to the two-dimensional material layer 1.
  • the first electrode 2a may be directly connected to the two-dimensional material layer 1.
  • the second electrode 2b is electrically connected to the semiconductor layer 4.
  • the second electrode 2b may be directly connected to the semiconductor layer 4.
  • the electromagnetic wave detector 100 is configured to change the voltage difference between the first electrode 2a and the second electrode 2b. Therefore, the electromagnetic wave detector 100 is configured so that the bias voltage V1 is applied to the two-dimensional material layer 1, the first insulating film 3a, and the semiconductor layer 4 arranged between the first electrode 2a and the second electrode 2b. Has been done.
  • the second insulating film 3b is in contact with the two-dimensional material layer 1.
  • the second insulating film 3b may be directly connected to the two-dimensional material layer 1.
  • the second insulating film 3b sandwiches the two-dimensional material layer 1 with the semiconductor layer 4.
  • the second insulating film 3b is arranged on the two-dimensional material layer 1.
  • the control electrode 2c is connected to the two-dimensional material layer 1 via the second insulating film 3b. In the present embodiment, the control electrode 2c sandwiches the second insulating film 3b with the two-dimensional material layer 1.
  • the control electrode 2c is arranged on the second insulating film 3b.
  • the electromagnetic wave detector 100 is configured to apply a voltage to the two-dimensional material layer 1 by the control electrode 2c. Specifically, the electromagnetic wave detector 100 is configured to change the fermi level of the two-dimensional material layer 1 by applying a voltage to the two-dimensional material layer 1 by the control electrode 2c.
  • the control electrode 2c includes a plurality of control electrode portions 2c0.
  • the plurality of control electrode units 2c0 include a first control electrode unit 2c1.
  • the first control electrode portion 2c1 is connected to the first portion 1a via the second insulating film 3b.
  • the second insulating film 3b may include a plurality of second insulating film portions 3b0.
  • Each of the plurality of control electrode portions 2c0 is connected to the semiconductor layer 4 via each of the plurality of second insulating film portions 3b0.
  • control electrode 2c is connected to the two-dimensional material layer 1 via the second insulating film 3b, the number and position of the plurality of control electrode portions 2c0 may be appropriately determined. Further, as shown in FIG. 5, the control electrode 2c may be a single electrode. Even when the control electrode 2c is a single electrode, the fermi level of the two-dimensional material layer 1 is controlled by the voltage.
  • the semiconductor layer 4 includes a first surface 4a and a second surface 4b.
  • the second surface 4b faces the first surface 4a.
  • the two-dimensional material layer 1 and the first insulating film 3a are arranged on the first surface 4a.
  • the electromagnetic wave is applied to the first surface 4a side of the semiconductor layer 4.
  • the second electrode 2b may be arranged on the second surface 4b.
  • the semiconductor layer 4 has sensitivity to the detection wavelength.
  • the detection wavelength is in the wavelength range of the electromagnetic wave to be detected by the electromagnetic wave detector 100.
  • the detection wavelength is predetermined.
  • the semiconductor layer 4 is configured such that an electromagnetic wave having a detection wavelength irradiates the semiconductor layer 4 to generate optical carriers in the semiconductor layer 4.
  • the phenomenon that optical carriers are generated by irradiation with electromagnetic waves is called photoelectric conversion.
  • the semiconductor material constituting the semiconductor layer 4 may be appropriately determined according to the detection wavelength.
  • the Fermi level of the semiconductor layer 4 is different from the Fermi level of the two-dimensional material layer 1.
  • the Fermi level of the two-dimensional material layer 1 is the energy that can form a Schottky barrier between the semiconductor layers 4. Therefore, a Schottky barrier is formed between the two-dimensional material layer 1 and the semiconductor layer 4. Therefore, the two-dimensional material layer 1 and the semiconductor layer 4 are configured to function as diodes by the Schottky barrier.
  • the electromagnetic wave detector 100 further includes a first power supply circuit (not shown) and a second power supply circuit (not shown).
  • the electromagnetic wave detector 100 may further include an ammeter (not shown).
  • the first power supply circuit is configured to apply a bias voltage V1 to the first insulating film 3a and the semiconductor layer 4 via the first electrode 2a and the second electrode 2b.
  • the electromagnetic wave detector 100 is configured to change the voltage difference between the first electrode 2a and the second electrode 2b by the first power supply circuit.
  • the second power supply circuit is configured to apply a control voltage V2 to the two-dimensional material layer 1 via the control electrode 2c.
  • the control voltage V2 is a voltage for controlling the Fermi level of the two-dimensional material layer 1.
  • the electromagnetic wave detector 100 is configured to change the Fermi level of the two-dimensional material layer 1 by applying a voltage to the two-dimensional material layer 1 via the control electrode 2c by the second power supply circuit.
  • the electromagnetic wave detector 100 may include a plurality of second power supply circuits.
  • Each of the plurality of second power supply circuits may be connected to each of the plurality of control electrode units 2c0.
  • each of the three second power supply circuits may be configured to apply different control voltages V2, V3, and V4 to each of the three control electrode units 2c0.
  • the Fermi level of the two-dimensional material layer 1 changes.
  • the Fermi level of the two-dimensional material layer 1 before the change is energy that cannot form a Schottky barrier with the semiconductor layer 4
  • the Fermi level of the two-dimensional material layer 1 is the same as that of the semiconductor layer 4. It changes to energy that can form a Schottky barrier.
  • the ammeter is electrically connected to the first power supply circuit.
  • the ammeter is configured to detect the current flowing through the two-dimensional material layer 1 between the first electrode 2a and the second electrode 2b. ⁇ About the Schottky barrier provided between the two-dimensional material layer 1 and the semiconductor layer 4> Subsequently, the Schottky barrier formed between the two-dimensional material layer 1 and the semiconductor layer 4 will be described with reference to FIGS. 6 and 7.
  • FIG. 6 and 7 are band diagrams in the case where the material of the two-dimensional material layer 1 is graphene and the semiconductor layer 4 is indium antimonide (InSb).
  • FIG. 6 is a band diagram in a state where the Schottky barrier is formed.
  • FIG. 7 is a band diagram in a state where the Schottky barrier is not formed.
  • the conductive type of the semiconductor layer 4 is p type. Optical carriers are electrons.
  • ⁇ B is a Schottky barrier.
  • E FG is the Fermi level of the two-dimensional material layer 1.
  • E FS is the Fermi level of the semiconductor layer 4.
  • E C is the conduction band of the semiconductor layer 4.
  • E V is the valence band of the semiconductor layer 4.
  • the fermi level of the two-dimensional material layer 1 is larger than the lower limit of the valence band of the semiconductor layer 4.
  • a Schottky barrier is formed between the two-dimensional material layer 1 and the semiconductor layer 4. Therefore, a diode characteristic is generated between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the electromagnetic wave detector 100 is configured to change the voltage difference between the first electrode 2a and the third electrode, the two-dimensional material layer 1 and the semiconductor layer are configured so that the optical carrier has energy exceeding the Schottky barrier. A voltage is applied to 4. As a result, the optical carrier reaches the semiconductor layer 4 from the two-dimensional material layer 1 over the Schottky barrier.
  • the Fermi level of the two-dimensional material layer 1 is smaller than the lower limit of the valence band of the semiconductor layer 4 as shown in FIG. 7, a Schottky barrier is formed between the two-dimensional material layer 1 and the semiconductor layer 4. Not done. Therefore, no diode characteristic is generated between the two-dimensional material layer 1 and the semiconductor layer 4. When no diode characteristic is generated between the two-dimensional material layer 1 and the semiconductor layer 4, the dark current flowing through the two-dimensional material layer 1 becomes large. Therefore, even if a large detection signal is obtained by the optical gate effect described later, the SN ratio deteriorates.
  • the Schottky barrier is small, the ratio of the dark current to the change in the bias voltage V1 becomes large, so that the operation as the electromagnetic wave detector 100 becomes unstable. That is, even when the bias voltage V1 changes slightly, the dark current becomes large and the SN ratio deteriorates.
  • FIGS. 6 and 7 show band diagrams in the case where the optical carrier is an electron and the conductive type of the semiconductor layer 4 is a p-type, but the optical carrier and the conductive type are not limited thereto. That is, the optical carrier may be either an electron or a hole as long as a Schottky barrier is formed between the two-dimensional material layer 1 and the semiconductor layer 4. Further, as long as a Schottky barrier is formed between the two-dimensional material layer 1 and the semiconductor layer 4, the conductive type of the semiconductor layer 4 may be either n-type or p-type.
  • the two-dimensional material layer 1, the first electrode 2a, the second electrode 2b, the control electrode 2c, the first insulating film 3a, the first insulating film 3a, and the semiconductor layer 4 of the electromagnetic wave detector 100 according to the first embodiment.
  • Each configuration will be described in detail.
  • the two-dimensional material layer 1 is, for example, a single layer of graphene.
  • Graphene in a single layer is a monatomic layer of two-dimensional carbon crystals.
  • the thickness of graphene in a single layer is, for example, 0.34 nm, which corresponds to one carbon atom.
  • graphene has a plurality of carbon atoms arranged in each of a plurality of chains arranged in a hexagonal shape.
  • the absorption rate of graphene is as low as 2.3%. Specifically, the absorption rate of white light of graphene is 2.3%.
  • the white light is light in which light having a wavelength of visible light is evenly mixed.
  • the two-dimensional material layer 1 may be a multilayer graphene in which a plurality of graphene layers are laminated.
  • the orientation of the lattice vectors of each hexagonal lattice of graphene in the multilayer graphene may be the same or different.
  • the orientations of the lattice vectors of the respective hexagonal lattices of graphene in the multilayer graphene may be completely the same.
  • a band gap is formed in the two-dimensional material layer 1 by laminating two or more graphene layers. That is, the size of the band gap can be adjusted by changing the number of laminated graphene layers.
  • the two-dimensional material layer 1 can have a wavelength selection effect of selecting an electromagnetic wave (detection wavelength) to be photoelectric conversion.
  • the mobility in the channel region decreases.
  • the number of graphene layers of the multilayer graphene is increased, the influence of carrier scattering from the substrate is suppressed, so that the noise of the electromagnetic wave detector 100 is reduced. Therefore, in the electromagnetic wave detector 100 having the two-dimensional material layer 1 in which the multilayer graphene is used, the light absorption is increased, so that the detection sensitivity of the electromagnetic wave is improved.
  • the two-dimensional material layer 1 includes a region that functions as a channel region and a region that functions as a source / drain layer.
  • the first portion 1a and the third portion 1c are regions that function as source / drain regions.
  • the second portion 1b is a region that functions as a channel region.
  • the material of the two-dimensional material layer 1 may be uniform or different in the region functioning as the channel region and the region functioning as the source / drain layer.
  • the optical carrier is doped from the first electrode 2a to the two-dimensional material layer 1.
  • the two-dimensional material layer 1 is graphene and the first electrode 2a is gold (Au)
  • the optical carrier is a hole. Due to the difference between the work function of graphene and the work function of gold (Au), holes are doped in the third portion 1c in contact with the first electrode 2a.
  • the electromagnetic wave detector 100 is driven in the electron conduction state in the state where the holes are doped in the third portion 1c, the mobility of the electrons flowing in the channel decreases due to the influence of the holes. Therefore, the contact resistance between the two-dimensional material layer 1 and the first electrode 2a increases.
  • the amount of carriers (doped amount) injected from the first electrode 2a into the two-dimensional material layer 1 is large. Therefore, the mobility of the electric field effect of the electromagnetic wave detector 100 is significantly reduced. Therefore, when all the regions of the two-dimensional material layer 1 are formed of the single-layer graphene, the performance of the electromagnetic wave detector 100 is deteriorated.
  • the amount of carriers doped into the multilayer graphene from the first electrode 2a is smaller than the amount of carriers doped into the single-layer graphene from the first electrode 2a. Therefore, the source / drain regions (first portion 1a and third portion 1c) in which carriers are easily doped are formed from the multilayer graphene, so that the contact resistance between the two-dimensional material layer 1 and the first electrode 2a is increased. The increase can be suppressed. As a result, it is possible to suppress a decrease in the mobility of the electric field effect of the electromagnetic wave detector 100, so that the performance of the electromagnetic wave detector 100 can be improved.
  • multilayer graphene is used as the material for the source / drain region (first portion 1a and third portion 1c).
  • single-layer graphene is used for the channel region (second portion 1b).
  • the two-dimensional material layer 1 may be non-doped graphene.
  • the two-dimensional material layer 1 may be graphene doped with p-type or n-type impurities.
  • nanoribbon-shaped graphene may be used as the two-dimensional material layer 1.
  • the two-dimensional material layer 1 may be a single graphene nanoribbon.
  • the structure of the two-dimensional material layer 1 may be a structure in which a plurality of graphene nanoribbons are laminated.
  • the structure of the two-dimensional material layer 1 may be a structure in which graphene nanoribbons are periodically arranged on a plane.
  • plasmon resonance is generated in the graphene nanoribbons, so that the sensitivity of the electromagnetic wave detector 100 is improved.
  • the structure in which graphene nanoribbons are periodically arranged is sometimes called a graphene metamaterial.
  • a protective film may be provided on the two-dimensional material layer 1.
  • the protective film (not shown) is provided so as to cover the two-dimensional material layer 1, the first electrode 2a, the first insulating film 3a, and the semiconductor layer 4.
  • the protective film is, for example, an insulating film made of silicon oxide (SiO).
  • the protective film may be an insulating film such as an oxide or a nitride.
  • the protective film may be, for example, aluminum oxide (alumina: Al 2 O 3 ) or hafnium oxide (HfO 2 ).
  • the protective film may be boron nitride (boron nitride: BN).
  • the material of the first electrode 2a, the second electrode 2b, and the control electrode 2c may be any material as long as it is a conductor.
  • the materials of the first electrode 2a, the second electrode 2b and the control electrode 2c are, for example, gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr) and palladium. It may contain at least one of (Pd).
  • an adhesion layer (not shown) is provided between the first electrode 2a and the first insulating film 3a, between the second electrode 2b and the semiconductor layer 4, and between the control electrode 2c and the second insulating film 3b. good.
  • the adhesion layer is configured to enhance adhesion.
  • the material of the adhesion layer includes, for example, a metal material such as chromium (Cr) or titanium (Ti).
  • the first insulating film 3a and the second insulating film 3b are, for example, silicon oxide (SiN) insulating films.
  • the materials of the first insulating film 3a and the second insulating film 3b are, for example, tetraethyl orthosilicate (Si (OC 2 H 5 ) 4 ), silicon nitride (Si 3 N 4 ), hafnium oxide (HfO 2 ), and aluminum oxide (HfO 2).
  • Al 2 O 3 ), nickel oxide (NiO), boron nitride (BN), or a siloxane-based polymer material may be used.
  • boron nitride (BN) is suitable as an insulating film as a base film arranged under the two-dimensional material layer 1.
  • the thickness of the first insulating film 3a and the second insulating film 3b is such that the two-dimensional material layer 1, the first electrode 2a and the second electrode 2b are electrically insulated from the semiconductor layer 4, and the tunnel current is two-dimensional. It is not particularly limited as long as it does not occur between the material layer 1, the first electrode 2a and the second electrode 2b and the semiconductor layer 4.
  • the thinner the thickness of the first insulating film 3a the greater the degree of electric field change of the two-dimensional material layer 1 due to the optical carrier generated at the interface between the first insulating film 3a and the semiconductor layer 4.
  • the thinner the thickness of the second insulating film 3b the greater the degree of electric field change of the two-dimensional material layer 1 due to the optical carrier generated at the interface between the second insulating film 3b and the semiconductor layer 4. Therefore, it is desirable that the thickness of the first insulating film 3a and the second insulating film 3b is as thin as possible.
  • the electric field change of the two-dimensional material layer 1 caused by the optical carrier generated at the interface between the insulating film (first insulating film 3a and the second insulating film 3b) and the semiconductor layer 4 is an optical gate. It is called an effect. The detailed generation process of the optical gate effect will be described later.
  • the material of the semiconductor layer 4 is, for example, a compound semiconductor such as silicon (Si), germanium (Ge), III-V group semiconductor or II-V group semiconductor, cadmium mercury telluride (HgCdTe), iridium antimonized (InSb), and the like.
  • the semiconductor layer 4 may be a substrate including a quantum well or quantum dots.
  • the material of the semiconductor layer 4 may be a Type II superlattice.
  • the material of the semiconductor layer 4 may be a simple substance of the above-mentioned materials, or may be a material in which the above-mentioned materials are combined.
  • the above materials of the semiconductor layer 4 have different detection wavelengths from each other. Therefore, if the material of the semiconductor layer 4 is a combination of the above-mentioned semiconductor materials, the electromagnetic wave detector 100 provided with the semiconductor layer 4 can detect multiple wavelengths.
  • the semiconductor layer 4 is doped with impurities so that the resistivity is 100 ⁇ ⁇ cm or less.
  • a pn junction may be provided inside the semiconductor layer 4.
  • the semiconductor layer 4 is doped with a high concentration, so that the read speed of the optical carriers generated at the pn junction interface is improved, so that the response speed of the electromagnetic wave detector 100 is improved.
  • the manufacturing method of the electromagnetic wave detector 100 includes a preparation step, a first insulating film forming step, a resist removing step, a first electrode forming step, an opening forming step, a two-dimensional material layer forming step, a second insulating film forming step, and a control electrode. Includes forming steps.
  • the preparation step, the first insulating film forming step, the resist removing step, the first electrode forming step, the opening forming step, the two-dimensional material layer forming step, the second insulating film forming step and the control electrode forming step are carried out in sequence. ..
  • the preparation process is carried out.
  • a flat semiconductor substrate containing silicon (Si) or the like is prepared as the semiconductor layer 4.
  • the material of the semiconductor substrate is a material having sensitivity to a predetermined detection wavelength.
  • the second electrode forming step is carried out.
  • a resist is formed as a protective film on the first surface 4a of the semiconductor layer 4.
  • the second electrode 2b is formed on the second surface 4b of the semiconductor layer 4.
  • An adhesion layer (not shown) may be formed in the region of the second surface 4b of the semiconductor layer 4 on which the second electrode 2b is formed before the second electrode 2b is formed.
  • the resist removal step is carried out.
  • the resist is removed from the first surface 4a of the semiconductor layer 4.
  • the first insulating film forming step is carried out.
  • the first insulating film 3a is formed on the first surface 4a of the semiconductor layer 4.
  • the first insulating film 3a may be thermally oxidized silicon oxide (SiO 2 ).
  • the film forming method of the first insulating film 3a may be a CVD (Chemical Vapor Deposition) method or a sputtering method.
  • the first electrode forming step is carried out.
  • the first electrode 2a is formed on the first insulating film 3a.
  • An adhesion layer may be formed in the region of the first insulating film 3a in which the first electrode 2a is formed before the first electrode is formed.
  • the following process is used as a method for forming the first electrode 2a.
  • a resist mask is formed on the upper surface of the first insulating film 3a by photoengraving or drawing with an electron beam (EB: Electron Beam).
  • EB Electron Beam
  • An opening region is formed in the region of the resist mask on which the first electrode 2a is formed.
  • a film such as metal to be the first electrode 2a is formed on the resist mask.
  • a thin-film deposition method, a sputtering method, or the like is used to form the film.
  • the film is formed so as to extend from the inside of the opening region of the resist mask to the upper surface of the resist mask.
  • the resist mask is removed together with a part of the film.
  • the other part of the film arranged in the opening region of the resist mask remains on the surface of the first insulating film 3a and becomes the first electrode 2a.
  • the method described above is generally called a lift-off method.
  • a film such as a metal film to be the first electrode 2a is first formed on the surface of the first insulating film 3a. After that, a resist mask is formed on the film by a photolithography method. The resist mask is formed so as to cover the region where the first electrode 2a is formed, but is not formed in a region other than the region where the first electrode 2a is formed. Then, the film is partially removed by wet etching or dry etching using the resist mask as a mask. As a result, a part of the film remains under the resist mask. A part of this film becomes the first electrode 2a. After that, the resist mask is removed. In this way, the first electrode 2a may be formed.
  • the opening forming step is carried out.
  • the opening forming step may be performed before the first electrode forming step.
  • the opening OP is formed in the first insulating film.
  • a resist mask (not shown) is formed on the first insulating film 3a by photoengraving, electron beam lithography, or the like.
  • An opening region is formed in the region of the resist mask in which the opening OP of the first insulating film 3a is formed.
  • the first insulating film 3a is etched using the resist mask as an etching mask.
  • the etching method can be arbitrarily selected from either the wet etching or the dry etching. After etching, the resist mask is removed. In this way, the opening OP is formed in the first insulating film 3a.
  • the two-dimensional material layer forming step is carried out.
  • the two-dimensional material layer 1 is formed so that the semiconductor layer 4 exposed inside the first electrode 2a, the first insulating film 3a, and the opening OP is covered with the two-dimensional material layer 1. ..
  • the method for forming the two-dimensional material layer 1 is not particularly limited.
  • the two-dimensional material layer 1 may be formed by, for example, epitaxial growth, or may be formed by a screen printing method. Further, the two-dimensional material layer 1 may be formed by transferring and attaching a two-dimensional material film previously formed by a CVD method.
  • the two-dimensional material layer 1 may be formed by transferring and attaching a film-like two-dimensional material film peeled off by mechanical peeling or the like.
  • a resist mask is formed on the two-dimensional material layer 1 by photoengraving or the like.
  • the resist mask is formed so as to cover the region where the two-dimensional material layer 1 is formed and to expose the other regions.
  • the two-dimensional material layer 1 is etched using the resist mask as an etching mask.
  • the etching method is, for example, dry etching with oxygen plasma. After that, the resist mask is removed. As a result, the two-dimensional material layer 1 shown in FIG. 1 is formed.
  • the second insulating film forming step is carried out.
  • an insulating film is formed on the two-dimensional material layer 1.
  • the method for forming the second insulating film 3b is, for example, an electron beam vapor deposition method, a CVD method, a sputtering method, or the like.
  • the method for forming the second insulating film 3b is preferably a method for forming the two-dimensional material layer 1 without damaging it.
  • the shape of the second insulating film 3b is processed by photolithography or the like.
  • the shape of the second insulating film 3b is the same as the shape of the region of the control electrode 2c in which the control electrode 2c is in contact with the second insulating film 3b as shown in FIG. 1 at the time of the second insulating film forming step. You may. Further, the shape of the second insulating film 3b may be processed into a large shape so that the control electrode 2c does not come into direct contact with the two-dimensional material layer 1 at the time of the second insulating film forming step. Further, the shape of the second insulating film 3b may be processed after the control electrode 2c is formed in the control electrode forming step. Similar to the opening OP forming step described above, the resist mask is formed by photolithography or EB drawing, and then the second insulating film 3b is processed by dry etching or the like.
  • control electrode forming step is carried out.
  • the control electrode 2c is formed on the second insulating film 3b.
  • the method of forming the control electrode 2c is the same as the method of forming the first electrode 2a in the first electrode forming step.
  • the electromagnetic wave detector 100 is manufactured.
  • the two-dimensional material layer 1 was formed on the first electrode 2a, but after the two-dimensional material layer 1 was formed on the first insulating film 3a, the two-dimensional material layer 1 was formed.
  • the first electrode 2a may be formed so as to overlap a part thereof. However, care must be taken when forming the first electrode 2a so that the two-dimensional material layer 1 is not damaged by the formation process of the first electrode 2a.
  • a first power supply circuit (not shown) is electrically connected between the first electrode 2a and the second electrode 2b.
  • a bias voltage V1 is applied between the first electrode 2a and the second electrode 2b.
  • a current circuit in which the first electrode 2a, the two-dimensional material layer 1, the semiconductor layer 4, and the second electrode 2b are connected in series in this order is formed inside the electromagnetic wave detector 100.
  • a current I flows through the two-dimensional material layer 1.
  • the current I flowing through the two-dimensional material layer 1 is measured by an ammeter (not shown) connected to the first power supply circuit.
  • the electromagnetic wave detector 100 is in a state where it can detect the electromagnetic wave.
  • the positive or negative voltage is selected according to the conductive type (doping type) of the semiconductor layer 4. If the conductive type of the semiconductor layer 4 is p type, a positive voltage is applied to the first electrode 2a. If the conductive type of the semiconductor layer 4 is n-type, a negative voltage is applied to the first electrode 2a.
  • the semiconductor layer 4 When the semiconductor layer 4 is irradiated with an electromagnetic wave having a wavelength having a sensitivity (electromagnetic wave having a detection wavelength), optical carriers are generated inside the semiconductor layer 4.
  • the two-dimensional material layer 1 and the semiconductor layer 4 function as diodes. Therefore, the optical carriers generated in the region of the semiconductor layer 4 facing the opening OP are injected into the first portion 1a of the two-dimensional material layer 1.
  • the magnitude of the current I changes as the optical carrier passes through the first portion 1a.
  • the current component that causes a change in the magnitude of the current when irradiated with an electromagnetic wave is called a photocurrent.
  • the above-mentioned optical gate effect is caused by the following process. Since the semiconductor layer 4 and the first insulating film 3a function as diodes, a depletion layer is formed at the interface between the semiconductor layer 4 and the first insulating film 3a by applying a voltage to the semiconductor layer 4. When the semiconductor layer 4 is irradiated with an electromagnetic wave having a detection wavelength, optical carriers are also generated in the depletion layer. The optical carriers generated in the depletion layer give an electric field effect to the third portion 1c of the two-dimensional material layer 1 via the first insulating film 3a. As a result, the resistance value of the two-dimensional material layer 1 changes, so that the current I flowing through the two-dimensional material layer 1 changes. That is, the electric field effect is generated by irradiating the semiconductor layer 4 with electromagnetic waves. The electric field effect changes the electrical properties of the two-dimensional material layer 1.
  • the change in the current I is detected via the first electrode 2a electrically connected to the two-dimensional material layer 1. More specifically, the change in current I is detected by an ammeter (not shown) connected to a first power supply circuit (not shown) electrically connected to the first power supply. As a result, the electromagnetic wave detector 100 detects the electromagnetic wave radiated to the electromagnetic wave detector 100.
  • the electromagnetic wave detector 100 is not limited to the above-described configuration in which a change in current in the two-dimensional material layer 1 is detected by an ammeter (not shown).
  • a constant current is passed between the first electrode 2a and the second electrode 2b, and the change in voltage V between the first electrode 2a and the second electrode 2b (that is, the voltage value in the two-dimensional material layer 1). Changes) may be detected by a voltmeter (not shown).
  • the above-mentioned electromagnetic wave detector 100 may be arranged as the first electromagnetic wave detector, and a second electromagnetic wave detector having the same configuration as the first electromagnetic wave detector may be further arranged.
  • the first electromagnetic wave detector is arranged in the space where the electromagnetic wave is irradiated.
  • the second electromagnetic wave detector is arranged in a space where electromagnetic waves are shielded. It may be detected by detecting the difference between the current of the first electromagnetic wave detector and the current of the second electromagnetic wave detector. It may be detected by detecting the difference between the voltage of the first electromagnetic wave detector and the voltage of the second electromagnetic wave detector.
  • the electromagnetic wave detector 100 includes a control electrode 2c. Therefore, the Fermi level of the two-dimensional material layer 1 can be changed by applying a voltage (control voltage V2) to the control electrode 2c.
  • the Fermi level of the two-dimensional material layer 1 is unstable. Therefore, the Fermi level of the two-dimensional material layer 1 changes depending on the manufacturing environment and the operating environment of the electromagnetic wave detector 100. Changes due to the operating environment are, for example, doping from insulating films and electrodes and aging. Therefore, the Fermi level of the two-dimensional material layer 1 can change to energy in which a Schottky barrier is not formed between the two-dimensional material layer 1 and the semiconductor layer 4. In this case, the electromagnetic wave detector 100 does not operate properly.
  • the Fermi level of the two-dimensional material layer 1 can change to an energy that cannot form a Schottky barrier even if it is an energy that can form a Schottky barrier at the time when the electromagnetic wave detector 100 is manufactured. Further, in the Schottky type electromagnetic wave detector in which the two-dimensional material layer is formed on the semiconductor layer, the Fermi level of the two-dimensional material layer does not change after the two-dimensional material layer is formed. Therefore, if the Fermi level of the two-dimensional material layer 1 is not the energy that can form the Schottky barrier, the Schottky barrier cannot be formed. From the above, it is necessary to change the Fermi level of the two-dimensional material layer 1 after the electromagnetic wave detector 100 is manufactured.
  • the electromagnetic wave detector 100 includes the control electrode 2c. Therefore, even after the electromagnetic wave detector 100 is manufactured, the fermi level of the two-dimensional material layer 1 can be changed.
  • the electromagnetic wave detector 100 includes a control electrode 2c. Therefore, the Fermi level of the two-dimensional material layer 1 can be changed to the energy at which a Schottky barrier is formed between the two-dimensional material layer 1 and the semiconductor layer 4. Therefore, a Schottky barrier can be formed between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the cutoff wavelength is a wavelength range in which the electromagnetic wave detector 100 can respond. Therefore, the cutoff wavelength can be controlled by applying the control voltage V2 to the two-dimensional material layer 1.
  • the control electrode 2c sandwiches the second insulating film 3b with the two-dimensional material layer 1. Therefore, the control electrode 2c can be formed after the two-dimensional material layer 1 is formed. Therefore, the unevenness of the two-dimensional material layer 1 can be reduced as compared with the case where the two-dimensional material layer 1 is formed on the control electrode 2c after the control electrode 2c is formed. That is, the two-dimensional material layer 1 can be flattened. Therefore, the performance of the two-dimensional material layer 1 is improved. Further, after forming the two-dimensional material layer 1, the first electrode 2a, the second electrode 2b and the control electrode 2c can be formed at the same time. Therefore, the manufacturing process of the electromagnetic wave detector 100 can be reduced.
  • the electromagnetic wave detector 100 is configured to change the voltage difference between the first electrode 2a and the second electrode 2b. Therefore, the bias voltage V1 can be applied to the two-dimensional material layer 1 and the semiconductor layer 4 so that the optical carriers cross the Schottky barrier. Therefore, the optical carrier can be injected from the semiconductor layer 4 into the two-dimensional material layer 1. Therefore, the detection sensitivity of the electromagnetic wave detector 100 can be improved.
  • the electromagnetic wave detector 100 is configured to change the fermi level of the two-dimensional material layer 1 by applying a voltage to the control electrode 2c. Therefore, even after the electromagnetic wave detector 100 is manufactured, the fermi level of the two-dimensional material layer 1 can be changed.
  • the control electrode 2c includes a plurality of control electrode portions 2c0. Therefore, by applying different control voltages to each of the plurality of control electrode portions 2c0, a potential gradient can be formed in the two-dimensional material layer 1. An internal electric field is formed in the two-dimensional material layer 1 by the gradient of the potential. Therefore, it is possible to improve the extraction efficiency of optical carriers generated by photoelectric conversion in the two-dimensional material layer 1 when irradiated with electromagnetic waves.
  • the extraction efficiency is the efficiency at which the optical carrier moves from the semiconductor layer 4 to the two-dimensional material layer 1. As a result, the photocurrent flowing through the two-dimensional material layer 1 can be increased. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the two-dimensional material layer 1 contains any material selected from the group consisting of graphene, transition metal dicarbogenite, black phosphorus, silicene, graphene nanoribbons and borophenes. Therefore, the action and effect of the present embodiment can be surely obtained.
  • the thickness of the two-dimensional material layer 1 is as thin as one atomic layer.
  • the carrier mobility of single-layer graphene is higher than that of conventional semiconductor materials. Therefore, in the two-dimensional material layer 1, a large current change is generated with respect to a slight potential change as compared with the conventional semiconductor material. For example, the amount of current change due to the potential change applied to the two-dimensional material layer 1 due to the electric field change in the semiconductor layer 4 is larger than the amount of current change in a normal semiconductor.
  • the electromagnetic wave detector 100 when calculated from the mobility and thickness of electrons in the two-dimensional material layer 1, the current change amount in the two-dimensional material layer 1 is several hundred times to several thousand times the current change amount in a normal semiconductor. It is about double. Therefore, the electromagnetic wave detector 100 according to the present embodiment can detect electromagnetic waves with higher sensitivity than the electromagnetic wave detector that detects only the optical carriers generated in the semiconductor layer 4.
  • the electromagnetic wave detector 100 in addition to the photocurrent generated in the semiconductor layer 4 by light irradiation and the current associated with the optical gate effect, the light caused by the photoelectric conversion effect of the two-dimensional material layer 1 An electric current is also generated.
  • the electromagnetic wave detector 100 can detect not only the current generated in the semiconductor layer 4 by the incident electromagnetic wave and the current associated with the optical gate effect, but also the optical current caused by the original photoelectric conversion effect of the two-dimensional material layer 1.
  • the two-dimensional material layer 1 is electrically connected to the semiconductor layer 4 at the opening OP. Therefore, the two-dimensional material layer 1 and the semiconductor layer 4 function as diodes. Therefore, by applying the reverse bias to the two-dimensional material layer 1 and the semiconductor layer 4, the current I in the state where the light is not irradiated can be made zero. That is, by applying the reverse bias, the electromagnetic wave detector 100 can be turned off. As a result, it is possible to suppress the flow of dark current through the two-dimensional material layer 1, so that the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the current derived from the optical carrier injected into the two-dimensional material layer 1 is detected as the current I flowing through the electromagnetic wave detector 100.
  • the current derived from the optical carrier injected into the two-dimensional material layer 1 is detected after the magnitude of the current changes due to the above-mentioned optical gate effect.
  • the two-dimensional material layer 1 extends from the opening OP to the first insulating film 3a. Therefore, the two-dimensional material layer 1 is connected to the semiconductor layer 4 via the first insulating film 3a. Therefore, since the optical gate effect is generated in the two-dimensional material layer 1, the voltage of the two-dimensional material layer 1 changes.
  • the voltage change of the two-dimensional material layer 1 is regarded as a pseudo application of a gate voltage to the two-dimensional material layer 1. Thereby, the conductivity of the two-dimensional material layer 1 can be modulated. Therefore, the photocurrent injected from the semiconductor layer 4 into the two-dimensional material layer 1 can be amplified.
  • the optical gate effect does not directly enhance the quantum efficiency of the photoelectric conversion material, but increases the current change due to the incident of electromagnetic waves. Therefore, the quantum efficiency calculated equivalently from the differential current due to the incident of electromagnetic waves exceeds 100%, and when optimized, the equivalent quantum efficiency reaches about 1000% to 10000%. Therefore, the amount of change in the current I when the electromagnetic wave detector 100 according to the present embodiment is irradiated with the electromagnetic wave is the amount of change in the current when the electromagnetic wave is incident on the conventional electromagnetic wave detector in which the optical gate effect is not exhibited. Greater than. Therefore, the electromagnetic wave detector 100 according to the present embodiment has higher sensitivity than the conventional electromagnetic wave detector.
  • Embodiment 2 Next, the configuration of the electromagnetic wave detector 100 according to the second embodiment will be described with reference to FIG. Unless otherwise specified, the second embodiment has the same configuration, manufacturing method, and action and effect as those of the first embodiment. Therefore, the same components as those in the first embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the control electrode 2c sandwiches the semiconductor layer 4 with the second electrode 2b.
  • the second electrode 2b is directly connected to the semiconductor layer 4.
  • the second insulating film 3b covers the control electrode 2c.
  • the two-dimensional material layer 1 covers the semiconductor layer 4, the first insulating film 3a, and the second insulating film 3b.
  • the control electrode 2c is arranged below the two-dimensional material layer 1. Further, the control electrode 2c is connected to a second power supply circuit (not shown) at a portion extending to the back side or the front side of the paper surface.
  • the electromagnetic wave detector 100 according to the present embodiment is different from the electromagnetic wave detector 100 according to the first embodiment in that the control electrode 2c is arranged below the graphene layer.
  • the method for manufacturing the electromagnetic wave detector 100 according to the present embodiment after the above-mentioned first insulating film forming step, opening OP forming step, second insulating film forming step and control electrode forming step are sequentially carried out, two The dimensional material layer forming step is carried out. That is, the two-dimensional material layer 1 is formed after the first insulating film 3a, the second insulating film 3b, and the control electrode 2c are formed. Therefore, the two-dimensional material layer 1 is finally formed into a film.
  • the configuration of the electromagnetic wave detector 100 according to the second embodiment can be applied to other embodiments.
  • the two-dimensional material layer 1 covers the semiconductor layer 4, the first insulating film 3a, and the second insulating film 3b. Therefore, the two-dimensional material layer 1 can be formed after the first insulating film 3a, the second insulating film 3b, and the control electrode 2c are formed. Therefore, it is possible to prevent the two-dimensional material layer 1 from being damaged by the forming process of the second insulating film 3b and the control electrode 2c. In addition, residues such as resist can be suppressed. Therefore, the performance of the electromagnetic wave detector 100 can be improved.
  • Embodiment 3 Next, the configuration of the electromagnetic wave detector 100 according to the third embodiment will be described with reference to FIGS. 9 to 12. Unless otherwise specified, the third embodiment has the same configuration, manufacturing method, and action and effect as those of the first embodiment. Therefore, the same components as those in the first embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • FIG. 9 is a top view schematically showing the first configuration of the third embodiment.
  • FIG. 9 is a partially enlarged view of a region corresponding to the IX region of FIG. 10 to 12 are top views of the region corresponding to FIG. 9.
  • the electromagnetic wave detector 100 is configured so that surface plasmon resonance occurs in the control electrode 2c.
  • the material of the control electrode 2c is a material that causes surface plasmon resonance.
  • the material of the control electrode 2c is a material that causes surface plasmon resonance by an electromagnetic wave having a detection wavelength.
  • the detection wavelength of the electromagnetic wave detector 100 is in the region from the wavelength of visible light to the wavelength of infrared light, the material of the control electrode 2c is, for example, aluminum (Al), gold (Au), or the like.
  • the surface of the control electrode 2c where the electromagnetic wave is incident on the control electrode 2c may be coated with a coating material that causes plasmon resonance.
  • the coating material that causes plasmon resonance is, for example, titanium nitride (TiN), a transparent conductive film (ITO film: Indium Tin Oxide film), graphene, or the like.
  • the coating material may be a material other than the metal material.
  • the electrode itself may be graphene.
  • Graphene may be single-layered or multi-layered, and in the case of multi-layered graphene, graphite may be used.
  • the control electrode 2c includes a plurality of control electrode portions 2c0.
  • the adjacent control electrode portions 2c0 among the plurality of control electrode portions 2c0 are arranged at intervals where surface plasmon resonance occurs in each of the plurality of control electrode portions 2c0.
  • the plurality of control electrode portions 2c0 are periodically arranged.
  • the fact that the plurality of control electrode portions 2c0 are periodically arranged means that the distance between the adjacent control electrode portions 2c0 among the plurality of control electrode portions 2c0 is constant.
  • the wavelength at which surface plasmon resonance occurs in the control electrode unit 2c0 is determined by the width w of the control electrode unit 2c0, the distance g between adjacent control electrode units 2c0, and the period p.
  • the width w is a dimension along the X-axis direction of the control electrode portion 2c0.
  • the interval g is an interval between adjacent control electrode portions 2c0 along the X-axis direction.
  • the period p is the sum of the interval g and the width w.
  • the width w is 2 ⁇ m and the interval g is 1 ⁇ m
  • the plasmon resonance wavelength is 10 ⁇ m.
  • plasmon resonance occurs even at wavelengths other than the above-mentioned infrared wavelength region.
  • FIGS. 9 and 10 three control electrode portions 2c0 are arranged, and in FIGS. 11 and 12, nine control electrode portions 2c0 are arranged, but the number of control electrode portions 2c0 is not limited. Further, although the plurality of control electrode portions 2c0 are arranged periodically in one dimension in FIGS.
  • the width w, the interval g, and the period p of the control electrode portions 2c0 are appropriately adjusted. As a result, plasmon resonance occurs in the control electrode portion 2c0. If these parameters are different, the plasmon resonance wavelength will also be different. However, in the structures of FIGS. 9 to 12, the width w is the most dominant parameter, but which parameter is dominant depends on the structure.
  • the shape and arrangement of the control electrode portion 2c0 may be appropriately determined as long as plasmon resonance occurs in the control electrode portion 2c0. Regardless of whether the shape of the control electrode portion 2c0 is a polygon such as a rectangle, a square, or a triangle, or a circle, plasmon resonance can occur in the control electrode portion 2c0. Further, the shape of the control electrode portion 2c0 may be a fractal shape. The plurality of control electrode portions 2c0 may be arranged concentrically.
  • the second electrode 2b, the control electrode 2c, the second insulating film 3b, and the semiconductor layer 4 form a metamaterial structure in which a metal, a dielectric, and a metal are sequentially laminated. ..
  • the dominant parameter that determines the plasmon resonance wavelength is the width w of the control electrode portion 2c0.
  • each of the plurality of control electrode portions 2c0 may extend along the X-axis direction.
  • Each of the plurality of control electrode portions 2c0 may be arranged side by side along the Y-axis direction.
  • the plurality of control electrode units 2c0 may include a third control electrode unit 2c3, a fourth control electrode unit 2c4, and a fifth control electrode unit 2c5.
  • the third control electrode portion 2c3, the fourth control electrode portion 2c4, and the fifth control electrode portion 2c5 have different widths w3, w4, and w5, respectively.
  • the distance g between the third control electrode unit 2c3 and the fourth control electrode unit 2c4 is the same as the distance g between the fourth control electrode unit 2c4 and the fifth control electrode unit 2c5. Further, the intervals g may be different.
  • adjacent control electrode portions 2c0 may be arranged with the same spacing g in each of the X-axis direction and the Y-axis direction.
  • the plurality of control electrode units 2c0 may include a plurality of sixth control electrode units 2c6, a plurality of seventh control electrode units 2c7, and a plurality of eighth control electrode units 2c8.
  • Each of the plurality of sixth control electrode portions 2c6 has a width w6.
  • Each of the plurality of seventh control electrode portions 2c7 has a width w7.
  • Each of the plurality of eighth control electrode portions 2c8 has a width w8.
  • the width w6, the width w7 and the width w8 are different from each other.
  • the distance g1 between the adjacent sixth control electrode portion 2c6 and the seventh control electrode portion 2c7 is smaller than the distance g2 between the adjacent seventh control electrode portion 2c7 and the eighth control electrode portion 2c8. Further, the distance between the adjacent sixth control electrode portions 2c6 is the same as each other. The distance between the adjacent seventh control electrode portions 2c7 is the same as each other. The distance between the adjacent eighth control electrode portions 2c8 is the same as each other.
  • the plasmon resonance wavelengths in the regions having different structures are different, and the plasmon resonance wavelength is multi-wavelength. To become. When different plasmon resonance wavelengths are in close proximity, the resonance wavelength is broadened.
  • the configuration of the electromagnetic wave detector 100 according to the third embodiment can be applied to other embodiments.
  • the material of the control electrode 2c is a material that causes surface plasmon resonance. Therefore, surface plasmon resonance can be generated in the control electrode 2c. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the mechanism by which the sensitivity of the electromagnetic wave detector 100 is improved by surface plasmon resonance will be described later.
  • the adjacent control electrodes 2c of the plurality of control electrode portions 2c0 are arranged at intervals where surface plasmon resonance occurs in each of the plurality of control electrode portions 2c0. Therefore, surface plasmon resonance can be generated in each of the plurality of control electrode portions 2c0. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the electromagnetic field is enhanced around the control electrode 2c and the control electrode 2c.
  • This enhancement of the electromagnetic field is also called localized surface plasmon resonance.
  • the electromagnetic field is also enhanced at the same time in the two-dimensional material layer 1 to which the control electrode 2c is connected. Therefore, the absorption rate of the optical carriers of the two-dimensional material layer 1 increases.
  • the absorptivity of the optical carriers of the two-dimensional material layer 1 is improved to nearly 100% by appropriately designing the width w, the interval g, and the period p.
  • the electromagnetic field is also strengthened at the same time in the semiconductor layer 4. As a result, the photoelectric conversion efficiency of the semiconductor layer 4 is enhanced, so that the optical carriers generated in the semiconductor layer 4 increase.
  • the current flowing through the two-dimensional material layer 1 becomes large. Further, since more optical carriers are generated in the semiconductor layer 4, the current flowing through the two-dimensional material layer 1 becomes large. Since the current flowing through the two-dimensional material layer 1 is finally taken out as a photodetection signal, the photodetection signal becomes large. Further, since the magnitude of the optical gate effect in the two-dimensional material layer 1 is proportional to the magnitude of the current flowing through the two-dimensional material layer 1, the magnitude of the optical gate effect becomes stronger. Therefore, the final photodetection signal is further enhanced. Therefore, the detection performance of the electromagnetic wave detector 100 can be improved.
  • the enhancement of the electromagnetic field by the plasmon resonance is caused only by the electromagnetic wave having the plasmon resonance wavelength. Therefore, the electromagnetic field is selectively enhanced by the electromagnetic wave having the plasmon resonance wavelength. Therefore, the sensitivity of the electromagnetic wave detector 100 is selectively enhanced at the plasmon resonance wavelength. Therefore, by setting the detection wavelength to the plasmon resonance wavelength, the electromagnetic wave detector 100 can selectively detect the electromagnetic wave having the detection wavelength. Alternatively, when the plasmon resonance wavelength is increased to multiple wavelengths, the detection sensitivity is enhanced at the multiple wavelengths.
  • the plurality of control electrode units 2c0 include the first control electrode unit 2c1.
  • the first control electrode portion 2c1 is connected to the second portion (see FIG. 1) of the two-dimensional material layer 1 via the second insulating film 3b (see FIG. 1).
  • the electromagnetic field is strongly localized at the lower end of the electrode. Therefore, the plasmon resonance generated in the first control electrode unit 2c1 has a larger electromagnetic field than the plasmon resonance generated in the second control electrode unit 2c2 (FIG. 13) described later. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • each of the plurality of control electrode portions 2c0 extends along the Y-axis direction.
  • Each of the plurality of control electrode portions 2c0 is arranged side by side along the X-axis direction. Therefore, plasmon resonance occurs due to the absorption of the electromagnetic wave only when the electric field of the electromagnetic wave incident on the electromagnetic wave detector 100 is parallel to the X-axis direction. Further, when the electric field of the electromagnetic wave is parallel to the Y-axis direction, the electromagnetic wave is not absorbed. That is, the electromagnetic wave detector 100 has polarization selectivity. As a result, the electromagnetic wave detector 100 can selectively detect polarized light. In addition, when the shape of each of the plurality of control electrode portions 2c0 is square or circular as shown in FIG. 11, the electromagnetic wave detector 100 does not have polarization selectivity.
  • the plurality of control electrode portions 2c0 have different widths, intervals, and periods from each other. Therefore, the plasmon resonance wavelength becomes multi-wavelength. As shown in FIGS. 9 and 11, resonance occurs at multiple wavelengths as compared with the case where the plurality of control electrode portions 2c0 have the same width, spacing, and period. If the resonance wavelengths are close to each other, the resonance wavelength is equivalently widened. Therefore, the detection wavelength of the electromagnetic wave detector 100 can be widened. That is, the detection wavelength of the electromagnetic wave detector 100 can be widened.
  • Embodiment 4 the configuration of the electromagnetic wave detector 100 according to the fourth embodiment will be described with reference to FIG. Unless otherwise specified, the fourth embodiment has the same configuration, manufacturing method, and action and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the plurality of control electrode units 2c0 include a first control electrode unit 2c1 and a second control electrode unit 2c2.
  • the second control electrode portion 2c2 is connected to the second portion 1b via the second insulating film 3b.
  • the second control electrode portion 2c2 is arranged above the first insulating film 3a. Therefore, the second control electrode portion 2c2 is arranged outside the opening OP.
  • the second control electrode portion 2c2 is not arranged in the opening OP.
  • a second insulating film 3b, a two-dimensional material layer 1 and a first insulating film 3a are sequentially laminated between the second control electrode portion 2c2 and the semiconductor layer 4.
  • the shortest distance between the first control electrode unit 2c1 and the semiconductor layer 4 is shorter than the shortest distance between the second control electrode unit 2c2 and the semiconductor layer 4.
  • the configuration of the electromagnetic wave detector 100 according to the fourth embodiment can be applied to other embodiments.
  • the second control electrode portion 2c2 is connected to the second portion 1b via the second insulating film 3b. Therefore, at least one of the plurality of control electrode portions 2c0 is not arranged in the opening OP. Therefore, the dimension of the electromagnetic wave detector 100 along the in-plane direction of the semiconductor layer 4 should be smaller than that in the case where all the control electrode portions 2c0 out of the plurality of control electrode portions 2c0 are arranged in the opening OP. Can be done.
  • Embodiment 5 the configuration of the electromagnetic wave detector 100 according to the fifth embodiment will be described with reference to FIG. Unless otherwise specified, the fifth embodiment has the same configuration, manufacturing method, and action and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the first electrode 2a includes a first side portion 2aa and a second side portion 2ab.
  • the second side portion 2ab sandwiches the opening OP with the first side portion 2aa.
  • the first electrode 2a is provided with a through hole TH.
  • the through hole TH communicates with the opening OP.
  • the through hole TH may be provided in the center of the first electrode 2a. That is, the shape of the first electrode 2a is a ring shape centered on the through hole TH. Although the shape of the first electrode 2a is ring-shaped in FIG. 14, the first electrode 2a may be U-shaped.
  • the two-dimensional material layer 1 includes a first end portion 11 and a second end portion 12.
  • the second end portion 12 faces the first end portion 11.
  • the first end portion 11 is directly connected to the first side portion 2aa.
  • the second end portion 12 is directly connected to the second side portion 2ab.
  • the two-dimensional material layer 1 extends from the first side portion 2aa to the second side portion 2ab across the through hole TH.
  • the two-dimensional material layer 1 is partially directly connected to the first electrode 2a, but the two-dimensional material layer 1 may be directly connected to the entire surface of the first electrode 2a.
  • the configuration of the electromagnetic wave detector 100 according to the fifth embodiment can be applied to other embodiments.
  • the first end portion 11 is directly connected to the first side portion 2aa.
  • the second end portion 12 is directly connected to the second side portion 2ab. Therefore, the current transmitted from the two-dimensional material layer 1 to the first electrode 2a is larger than that in the case where either one of the ends of the two-dimensional material layer 1 is not directly connected to the first electrode 2a. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved. Further, when the two-dimensional material layer 1 is directly connected to the entire surface of the first electrode 2a, the sensitivity of the electromagnetic wave detector 100 can be further improved.
  • Embodiment 6 the configuration of the electromagnetic wave detector 100 according to the sixth embodiment will be described with reference to FIG. Unless otherwise specified, the sixth embodiment has the same configuration, manufacturing method, and action and effect as those of the fifth embodiment. Therefore, the same components as those in the fifth embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the two-dimensional material layer 1 includes a first end portion 11 and a second end portion 12.
  • the first end portion 11 is directly connected to the first electrode 2a.
  • the first end portion 11 is arranged outside the opening OP.
  • the second end portion 12 is arranged away from the first electrode 2a.
  • the second end portion 12 is not directly connected to the first electrode 2a.
  • the second end portion 12 is arranged in the opening OP.
  • the configuration of the electromagnetic wave detector 100 according to the fifth embodiment can be applied to other embodiments.
  • the first end portion 11 is directly connected to the first electrode 2a.
  • the second end portion 12 is arranged away from the first electrode 2a. Therefore, the contact between the two-dimensional material layer 1 and the semiconductor layer 4 is better than when both ends of the two-dimensional material layer 1 are connected to the first electrode 2a.
  • the two-dimensional material layer 1 may be bent so that only the central portion of the two-dimensional material layer 1 comes into contact with the semiconductor layer 4. .. If only the central portion of the two-dimensional material layer 1 comes into contact with the semiconductor layer 4, good characteristics may not be obtained.
  • the second end portion 12 is arranged away from the first electrode 2a. Therefore, the contact between the two-dimensional material layer 1 and the semiconductor layer 4 is improved.
  • the contact between the two-dimensional material layer 1 and the semiconductor layer 4 is good, the movement of the optical carrier generated by the electromagnetic wave detector 100 is not hindered. As a result, the detection signal of the electromagnetic wave detector 100 becomes large. Also, the noise is reduced. Therefore, the performance of the electromagnetic wave detector 100 can be improved.
  • the sensitivity of the electromagnetic wave detector 100 does not greatly depend on the contact area between the two-dimensional material layer 1 and the semiconductor layer 4. Therefore, when the contact state between the two-dimensional material layer 1 and the semiconductor layer 4 is improved, the optical carrier path becomes large. Therefore, the pixel area (area of the semiconductor layer 4) of the electromagnetic wave detector 100 can be reduced. Therefore, the electromagnetic wave detector 100 can be miniaturized.
  • Embodiment 7 the configuration of the electromagnetic wave detector 100 according to the seventh embodiment will be described with reference to FIG. Unless otherwise specified, the seventh embodiment has the same configuration, manufacturing method, and action and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the electromagnetic wave detector 100 further includes a buffer layer 5.
  • the buffer layer 5 is sandwiched between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the buffer layer 5 electrically connects the semiconductor layer 4 and the first portion 1a. Therefore, in the present embodiment, the first portion 1a is connected to the semiconductor layer 4 via the buffer layer 5.
  • the thickness of the buffer layer 5 is thinner than that of the first insulating film 3a.
  • the plurality of control electrode units 2c0 include a ninth control electrode unit 2c9.
  • the ninth control electrode portion 2c9 is connected to the buffer layer 5 via the second insulating film 3b and the two-dimensional material layer 1.
  • the buffer layer 5 has a thickness capable of forming a tunnel current between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the buffer layer 5 is, for example, an insulating film having a thickness of 1 nm or more and 10 nm or less.
  • the buffer layer 5 is thinner than the first insulating film 3a.
  • the type of insulating film is, for example, a metal oxide such as alumina (aluminum oxide) or hafnium oxide (HfO 2 ), a semiconductor oxide such as silicon oxide, and a semiconductor nitride such as silicon nitride (Si 3 N 4).
  • the method for producing the buffer layer 5 may be appropriately determined, but may be selected from, for example, an ALD (Atomic Layer Deposition) method, a vacuum vapor deposition method, a sputtering method, or the like. Further, the buffer layer 5 may be formed by oxidizing or nitriding the surface of the semiconductor layer 4. Further, the buffer layer 5 may be a natural oxide film formed on the surface of the semiconductor layer 4.
  • ALD Atomic Layer Deposition
  • a vacuum vapor deposition method a vacuum vapor deposition method
  • a sputtering method or the like.
  • the buffer layer 5 may be formed by oxidizing or nitriding the surface of the semiconductor layer 4. Further, the buffer layer 5 may be a natural oxide film formed on the surface of the semiconductor layer 4.
  • the thickness of the buffer layer 5 according to the modified example of the seventh embodiment is thicker than the thickness capable of forming a tunnel current between the two-dimensional material layer 1 and the semiconductor layer 4, and is thicker than the first insulating film 3a. Is also thin. Therefore, the optical carriers generated in the semiconductor layer 4 are not injected into the two-dimensional material layer 1 through the buffer layer 5. Also, the optical gate effect occurs. Since the thickness of the buffer layer 5 is thinner than that of the first insulating film 3a, a carrier is placed between the two-dimensional material layer 1 in the region in contact with the first insulating film 3a and the two-dimensional material layer 1 in contact with the buffer layer 5. A density gradient occurs.
  • the configuration of the electromagnetic wave detector 100 according to the seventh embodiment and its modified example can be applied to other embodiments.
  • the electromagnetic wave detector 100 further includes a buffer layer 5. Therefore, the carrier density is between the two-dimensional material layer 1 (second portion 1b) in the region in contact with the first insulating film 3a and the two-dimensional material layer 1 (first portion 1a) in the region in contact with the buffer layer 5. Gradient occurs. As a result, the mobility of the two-dimensional material layer 1 becomes high, so that the photocurrent taken out from the two-dimensional material layer 1 becomes large. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the buffer layer 5 has a thickness capable of forming a tunnel current between the semiconductor and the two-dimensional material layer 1. Therefore, the optical carriers generated in the semiconductor layer 4 are injected into the two-dimensional material layer 1 through the buffer layer 5. As a result, a large photocurrent is injected into graphene, so that the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the plurality of control electrode units 2c0 include the ninth control electrode unit 2c9.
  • the ninth control electrode portion 2c9 is connected to the buffer layer 5 via the second insulating film 3b and the two-dimensional material layer 1. Therefore, the magnitude of the tunnel current can be controlled in addition to the Fermi level of the two-dimensional material layer 1 by the ninth control electrode unit 2c9. Further, by applying the bias voltage V1, the magnitude of the tunnel current can be increased. Thereby, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • Embodiment 8 the configuration of the electromagnetic wave detector 100 according to the eighth embodiment will be described with reference to FIG. Unless otherwise specified, the eighth embodiment has the same configuration, manufacturing method, and action and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the electromagnetic wave detector 100 further includes a connecting conductor 6.
  • the two-dimensional material layer 1 is electrically connected to the semiconductor layer 4 via the connecting conductor 6.
  • the connecting conductor 6 is arranged inside the opening OP.
  • the connecting conductor 6 is in contact with the first insulating film 3a.
  • a two-dimensional material layer 1 is superposed on the upper surface of the connecting conductor 6.
  • the lower surface of the connecting conductor 6 is electrically connected to the first surface 4a of the semiconductor layer 4.
  • the two-dimensional material layer 1 is electrically connected to the upper surface of the connecting conductor 6.
  • the position of the upper surface of the connecting conductor 6 is the same as the position of the upper surface of the first insulating film 3a.
  • the two-dimensional material layer 1 extends from the upper surface of the first insulating film 3a to the upper surface of the connecting conductor 6 in a planar shape without bending.
  • the connecting conductor 6 is bonded to the semiconductor layer 4 by ohmic contact. Further, it is desirable that the connecting conductor 6 has a high transmittance at the detection wavelength.
  • the material of the connecting conductor 6 is the same as that of the first electrode 2a, the second electrode 2b, and the control electrode 2c.
  • the material of the semiconductor layer 4 is indium antimonide (InSb)
  • it is desirable that the material of the connecting conductor 6 is nickel (Ni) in consideration of the difference in Fermi level from the two-dimensional material layer 1.
  • the contact resistance between the connecting conductor 6 and the two-dimensional material layer 1 is smaller than the contact resistance between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the contact resistance between the connecting conductor 6 and the semiconductor layer 4 is smaller than the contact resistance between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the sum of the contact resistance between the connecting conductor 6 and the two-dimensional material layer 1 and the contact resistance between the connecting conductor 6 and the semiconductor layer 4 is smaller than the contact resistance between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the configuration of the electromagnetic wave detector 100 according to the eighth embodiment can be applied to other embodiments.
  • the two-dimensional material layer 1 is electrically connected to the semiconductor layer 4 via the connecting conductor 6.
  • the sum of the contact resistance between the connecting conductor 6 and the two-dimensional material layer 1 and the contact resistance between the connecting conductor 6 and the semiconductor layer 4 is smaller than the contact resistance between the two-dimensional material layer 1 and the semiconductor layer 4. Therefore, the contact resistance can be reduced as compared with the case where the two-dimensional material layer 1 and the semiconductor layer 4 are directly bonded. Further, since the two-dimensional material layer 1 and the semiconductor layer 4 are joined by Schottky bonding, the attenuation of photocurrent can be suppressed.
  • the position of the upper surface of the connecting conductor 6 is the same as the position of the upper surface of the first insulating film 3a. Therefore, since the two-dimensional material layer 1 is formed horizontally without bending, the mobility of carriers in the two-dimensional material layer 1 is improved. Since the optical gate effect is proportional to the mobility, the detection sensitivity of the electromagnetic wave detector 100 can be improved.
  • Embodiment 9 the configuration of the electromagnetic wave detector 100 according to the ninth embodiment will be described with reference to FIGS. 18 to 24.
  • the ninth embodiment has the same configuration, manufacturing method, and action and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the semiconductor layer 4 includes a first semiconductor unit 41 and a second semiconductor unit 42.
  • the second semiconductor unit 42 has a conductive type different from that of the first semiconductor unit 41. That is, the first semiconductor unit 41 and the second semiconductor unit 42 are photodiodes having different conductive types from each other.
  • the first semiconductor unit 41 has a first conductive type.
  • the second semiconductor portion 42 has a second conductive type.
  • the first conductive type is a conductive type opposite to the second conductive type. Therefore, the carrier doped in the first semiconductor portion 41 is different from the carrier doped in the second semiconductor portion 42.
  • the first semiconductor portion 41 is joined to the second semiconductor portion 42.
  • the first semiconductor portion 41 is joined to the second semiconductor portion 42 immediately below the opening OP. Therefore, a pn junction is formed inside the semiconductor layer 4.
  • the second semiconductor unit 42 has an absorption wavelength different from that of the first semiconductor unit 41.
  • the absorption wavelength of the second semiconductor unit 42 may be larger or smaller than the absorption wavelength of the first semiconductor unit 41.
  • the absorption wavelength of the second semiconductor unit 42 may be partially the same as the absorption wavelength of the first semiconductor unit 41, as long as it is not completely the same as the absorption wavelength of the first semiconductor unit 41.
  • a tunnel diode may be used as the semiconductor layer 4 including the first semiconductor portion 41 and the second semiconductor portion 42.
  • a large photocurrent is generated only when the semiconductor layer 4 is irradiated with electromagnetic waves. Therefore, the photocurrent is injected into the two-dimensional material layer 1, and the electric field changes in the two-dimensional material layer 1. This improves the sensitivity of the electromagnetic wave detector 100.
  • the semiconductor layer 4 may further include a third semiconductor unit 43.
  • the third semiconductor unit 43 may have either a first semiconductor type or a second semiconductor type.
  • the third semiconductor portion 43 is joined to at least one of the first semiconductor portion 41 and the second semiconductor portion 42.
  • the third semiconductor portion 43 is preferably bonded to both the first semiconductor portion 41 and the second semiconductor portion 42.
  • the third semiconductor portion 43 may surround the first semiconductor portion 41 and the second semiconductor portion 42 along the in-plane direction of the semiconductor layer 4.
  • the first electrode 2a may include a pair of first electrode portions 2a1 arranged so as to sandwich the opening OP. Each of the pair of first electrode portions 2a1 is connected to the first insulating film 3a.
  • the electromagnetic wave irradiates the first semiconductor portion 41, the second semiconductor portion 42, and the junction interface between the first semiconductor portion 41 and the second semiconductor portion 42.
  • the first electrode 2a is connected to each of the first semiconductor section 41 and the second semiconductor section 42.
  • the pair of first electrode portions 2a1 are connected to the first semiconductor portion 41 and the second semiconductor portion 42, respectively. Therefore, the bias voltage V1 is applied to each of the first semiconductor unit 41 and the second semiconductor unit 42 via the first electrode 2a.
  • the second semiconductor portion 42 includes a pair of second semiconductor portions 420.
  • the pair of second semiconductor portions 420 sandwiches the first semiconductor portion 41. Therefore, each of the pair of second semiconductor portions 420 is joined to the first semiconductor portion 41. Therefore, two joints are joined to the first semiconductor portion 41. Therefore, two pn junctions are formed in the first semiconductor portion 41.
  • the semiconductor layer 4 is configured as either a pnp photoresistor or an npn photoresistor.
  • the first semiconductor portion 41 is joined to the second semiconductor portion 42 along the in-plane direction of the semiconductor layer 4. Therefore, the bonding interface extends along the in-plane direction of the semiconductor layer 4.
  • the second semiconductor unit 42 is embedded in the first semiconductor unit 41.
  • the two-dimensional material layer 1 is joined to the second semiconductor portion 42 via a thin portion of the first semiconductor portion 41.
  • the bonding interface extends directly below the semiconductor layer 4 along the in-plane direction of the semiconductor layer 4.
  • the second semiconductor portion 42 is not exposed from the first insulating film 3a.
  • the configuration of the electromagnetic wave detector 100 according to the ninth embodiment can be applied to other embodiments.
  • the electromagnetic wave detector 100 according to the ninth embodiment, as shown in FIG. 18, the first semiconductor portion 41 is joined to the second semiconductor portion 42. Therefore, a pn junction is formed in the semiconductor layer 4. Therefore, optical carriers can be generated from the pn junction of the semiconductor layer 4. The optical carriers generated in the pn junction can be taken out from the two-dimensional material layer 1. Further, the region of the semiconductor layer 4 arranged directly above the junction interface is affected by the local electric field change at the junction interface between the first semiconductor portion 41 and the second semiconductor portion 42. As a result, the conductivity of the two-dimensional material layer 1 changes, so that the optical gate effect is enhanced. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the second semiconductor unit 42 has an absorption wavelength different from that of the first semiconductor unit 41. Therefore, the absorption wavelength of the semiconductor layer 4 is wider than that in the case where the semiconductor layer 4 is composed of one semiconductor portion. Therefore, the band of the detection wavelength of the electromagnetic wave detector 100 can be widened.
  • the first electrode 2a is connected to each of the first semiconductor unit 41 and the second semiconductor unit 42. ing. Thereby, the voltage can be applied to the two-dimensional material layer 1 while applying the voltage to each of the first semiconductor portion 41 and the second semiconductor portion 42. Therefore, since the depletion layer generated in the first semiconductor unit 41 and the second semiconductor unit 42 can be increased, the photocurrent can be increased. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the pair of second semiconductor portions 420 sandwich the first semiconductor portion 41. Therefore, the bonding interface between the first semiconductor portion 41 and the second semiconductor portion 42 is larger than that in the case where the second semiconductor portion 42 is composed of a single member. Further, the area of contact between the bonding interface and the two-dimensional material layer 1 is larger than that in the case where the second semiconductor portion 42 is made of a single member. Therefore, it is possible to increase the influence of the local electric field change caused by the irradiation of the semiconductor layer 4 with the electromagnetic wave on the two-dimensional material layer 1. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the pair of second semiconductor portions 420 sandwiches the first semiconductor portion 41.
  • the semiconductor layer 4 can function as either an npn photoresistor or a pnp photoresistor. Therefore, as the intensity of the light applied to the semiconductor layer 4 decreases, the resistance of the first semiconductor portion 41 and the second semiconductor portion 42 increases. Therefore, the photocurrent flows through the first semiconductor section 41 and the second semiconductor section 42 only when the semiconductor layer 4 is irradiated with light. Therefore, since the electric field changes only when the semiconductor layer 4 is irradiated with light, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the first semiconductor portion 41 is the second semiconductor portion 42 along the in-plane direction of the semiconductor layer 4. It is joined to. Therefore, the bonding interface between the first semiconductor portion 41 and the second semiconductor portion 42 extends along the in-plane direction of the semiconductor layer 4.
  • the semiconductor layer 4 is irradiated with electromagnetic waves from a direction in which the electromagnetic waves intersect in the in-plane direction of the semiconductor layer 4. Therefore, the intensity of the electromagnetic wave radiated to the junction interface is higher than that in the case where the junction interface extends along the intersecting direction. Therefore, since the photocurrent becomes large, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • Embodiment 10 the configuration of the electromagnetic wave detector 100 according to the tenth embodiment will be described with reference to FIGS. 25 to 27. Unless otherwise specified, the tenth embodiment has the same configuration, manufacturing method, and operation and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the opening OP includes a plurality of opening portions OP1 provided so as to be spaced apart from each other.
  • the broken line (see FIG. 1) showing the bending of the two-dimensional material layer 1 and the control electrode 2c is not shown in FIG. 25.
  • the two-dimensional material layer 1 is connected to the semiconductor layer 4 at each of the plurality of opening portions OP1.
  • two opening portions OP1 may be provided.
  • four opening portions OP1 may be provided.
  • the outer shape of the two-dimensional material layer 1 and the outer shape of the control electrode 2c are shown by broken lines.
  • the configuration of the electromagnetic wave detector 100 according to the tenth embodiment can be applied to other embodiments.
  • the two-dimensional material layer 1 is connected to the semiconductor layer 4 at each of the plurality of opening portions OP1. Therefore, the two-dimensional material layer 1 comes into contact with the semiconductor layer 4 at more positions than when the opening OP is single. Therefore, in the manufacturing process, it is possible to reduce the variation in contact between the two-dimensional material layer 1 and the semiconductor layer 4. Therefore, the performance of the electromagnetic wave detector 100 can be improved.
  • Embodiment 11 the configuration of the electromagnetic wave detector 100 according to the eleventh embodiment will be described with reference to FIG. 28. Unless otherwise specified, the eleventh embodiment has the same configuration, manufacturing method, and operation and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the first insulating film 3a includes the tapered portion 3a1.
  • the tapered portion 3a1 is configured to change in thickness as it approaches the opening OP from the first electrode 2a. That is, the first insulating film 3a is provided with a gradient.
  • the tapered portion 3a1 is configured to become thinner as it approaches the opening OP from the first electrode 2a.
  • the second portion 1b of the two-dimensional material layer 1 is directly connected to the tapered portion 3a1.
  • the tapered portion 3a1 may be formed by forming the first insulating film 3a in a state where the semiconductor layer 4 is tilted.
  • the tapered portion 3a1 may be formed by dry etching the first insulating film 3a in a state where the semiconductor layer 4 is tilted. As long as the taper portion 3a1 is configured so that the thickness changes as it approaches the opening OP from the first electrode 2a, the taper portion 3a1 is appropriately formed.
  • the configuration of the electromagnetic wave detector 100 according to the eleventh embodiment can be applied to other embodiments.
  • the tapered portion 3a1 is configured to change in thickness as it approaches the opening OP from the first electrode 2a. Therefore, when the semiconductor layer 4 is irradiated with electromagnetic waves, a local change occurs in the degree of electric field change in the two-dimensional material layer 1. That is, when the semiconductor layer 4 is irradiated with electromagnetic waves and the electric field change is applied to the two-dimensional material layer 1, the degree of the electric field change locally changes according to the change in the thickness of the first insulating film 3a. As a result, the mobility of the carriers in the two-dimensional material layer 1 is improved, and the detection sensitivity of the electromagnetic wave detector 100 is improved.
  • Embodiment 12 the configuration of the electromagnetic wave detector 100 according to the twelfth embodiment will be described with reference to FIG. 29. Unless otherwise specified, the twelfth embodiment has the same configuration, manufacturing method, and operation and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • a gap GAP is provided between the first insulating film 3a and the two-dimensional material layer 1. That is, the region corresponding to the channel region of the two-dimensional material layer 1 does not come into contact with the first insulating film 3a, unlike the electromagnetic wave detector 100 according to the first embodiment.
  • the size of the void GAP is such that an optical gate effect is generated between the two-dimensional material layer 1 and the semiconductor layer 4.
  • the electromagnetic wave detector 100 may further include a connection portion 7.
  • the connection portion 7 is arranged in the opening OP.
  • the two-dimensional material layer 1 is electrically connected to the semiconductor layer 4 via the connecting portion 7.
  • the material of the connecting portion 7 may be the same as the material of the semiconductor layer 4, the first electrode 2a, the second electrode 2b, or the control electrode 2c. It is desirable that the height of the upper surface of the connecting portion 7 is the same as the height of the upper surface of the first electrode 2a.
  • the two-dimensional material layer 1 extends from the first electrode 2a to the connection portion 7. If a gap GAP is provided between the insulating film and the two-dimensional material layer 1, another configuration may be adopted.
  • the second electrode 2b and the second insulating film 3b according to the present embodiment have the same configuration as the second electrode 2b and the second insulating film 3b of the second embodiment shown in FIG. Therefore, the second electrode 2b is directly connected to the semiconductor layer 4.
  • the second insulating film 3b covers the control electrode 2c. Further, the two-dimensional material layer 1 covers the semiconductor layer 4, the first insulating film 3a and the second insulating film 3b.
  • the configuration of the electromagnetic wave detector 100 according to the twelfth embodiment can be applied to other embodiments.
  • the electromagnetic wave detector 100 according to the twelfth embodiment, as shown in FIG. 29, a gap GAP is provided between the first insulating film 3a and the two-dimensional material layer 1. Therefore, it is possible to eliminate the influence of carrier scattering due to the contact between the first insulating film 3a and the two-dimensional material layer 1. As a result, it is possible to suppress a decrease in carrier mobility in the two-dimensional material layer 1. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved. The optical gate effect can be exerted even if the void GAP is provided below the two-dimensional material layer 1.
  • Embodiment 13 Next, the configuration of the electromagnetic wave detector 100 according to the thirteenth embodiment will be described with reference to FIGS. 30 and 31. Unless otherwise specified, the thirteenth embodiment has the same configuration, manufacturing method, and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the electromagnetic wave detector 100 further includes a contact layer 8.
  • the contact layer 8 is arranged so as to be in contact with at least one of the two-dimensional material layer 1 and the first electrode 2a.
  • the contact layer 8 is configured to supply holes or electrons (optical carriers) to the two-dimensional material layer 1 by coming into contact with either the two-dimensional material layer 1 or the first electrode 2a. That is, the contact layer 8 is configured to dope holes or electrons into the two-dimensional material layer 1.
  • the contact layer 8 is in contact with the first electrode 2a, but as shown in FIG. 31, the contact layer 8 may not be in contact with the first electrode 2a. Further, the contact layer 8 may be arranged so as to be in contact with either one of the two-dimensional material layer 1 and the first electrode 2a and not to the other.
  • a plurality of contact layers 8 may be laminated on the two-dimensional material layer 1.
  • a plurality of contact layers 8 may be formed on the two-dimensional material layer 1 between the first electrode 2a and the semiconductor layer 4.
  • the materials of the plurality of contact layers 8 may be the same or different.
  • the material of the contact layer 8 is, for example, a positive photoresist.
  • the positive photoresist is a composition containing a photosensitive agent having a quinonediagit group and a novolak resin.
  • the material of the contact layer 8 may be, for example, a material having a polar group. More specifically, the material of the contact layer 8 may be a material having an electron attracting group, which is an example of a material having a polar group. The material having an electron attracting group has an effect of reducing the electron density of the two-dimensional material layer 1. Further, the material of the contact layer 8 may be, for example, a material having an electron donating group, which is an example of a material having a polar group. The material having an electron donating group has an effect of increasing the electron density of the two-dimensional material layer 1.
  • the material of the contact layer 8 may be an organic substance, a metal, a semiconductor, an insulator, a two-dimensional material, or a mixture of any of these materials, as long as the charge is biased throughout the molecule to generate polarity.
  • the material of the contact layer 8 is an inorganic substance
  • the work function of the contact layer 8 is larger than the work function of the two-dimensional material layer 1, the two-dimensional material layer 1 is doped in a p-type.
  • the material of the contact layer 8 is an inorganic substance
  • the work function of the contact layer 8 is smaller than the work function of the two-dimensional material layer 1, the two-dimensional material layer 1 is doped in an n-type.
  • the material of the contact layer 8 is organic, the organic does not have a clear work function.
  • the two-dimensional material layer 1 is doped into n-type or p-type by determining the polar group of the material of the contact layer 8 based on the polarity of the molecules of the organic substances constituting the material of the contact layer 8. It is desirable to judge.
  • the region in which the resist is formed in the two-dimensional material layer 1 by the photolithography step becomes the p-type two-dimensional material layer region.
  • the manufacturing method can be simplified.
  • the material of the contact layer 8 may be a material in which polarity conversion occurs when the contact layer 8 is irradiated with an electromagnetic wave.
  • the polarity conversion occurs in the contact layer 8
  • the electrons or holes generated during the polarity conversion are supplied to the two-dimensional material layer 1. Therefore, electrons or holes are doped in the portion of the two-dimensional material layer 1 in which the contact layer 8 is in contact. Therefore, even after the contact layer 8 is removed, the portion of the two-dimensional material layer 1 that has been in contact with the contact layer 8 remains doped with electrons or holes. Therefore, when a material that undergoes a polarity conversion is used as the material of the contact layer 8, the contact layer 8 may be removed from the two-dimensional material layer 1 after the polarity conversion occurs.
  • the area of the open portion of the two-dimensional material layer 1 increases as compared with the case where the contact layer 8 is arranged. Therefore, the detection sensitivity of the electromagnetic wave detector 100 can be improved.
  • the polar conversion is a phenomenon in which a polar group is chemically converted. For example, an electron attracting group is changed to an electron donating group, an electron donating group is changed to an electron attracting group, or a polar group is changed. It means a phenomenon in which a non-polar group changes to a non-polar group or a non-polar group changes to a polar group.
  • polarity conversion occurs in the contact layer 8 only when an electromagnetic wave having a detection wavelength is irradiated.
  • doping is performed on the two-dimensional material layer 1 only when an electromagnetic wave having a detection wavelength is irradiated.
  • the photocurrent flowing into the two-dimensional material layer 1 can be increased.
  • the material of the contact layer 8 may be a material in which a redox reaction occurs when the contact layer 8 is irradiated with an electromagnetic wave.
  • the two-dimensional material layer 1 can be doped with electrons or holes generated when a redox reaction occurs in the contact layer 8.
  • the film thickness of the contact layer 8 is preferably sufficiently thin so that photoelectric conversion can be performed when the two-dimensional material layer 1 is irradiated with electromagnetic waves.
  • the contact layer 8 is formed so as to have a thickness such that the carrier is doped from the contact layer 8 to the two-dimensional material layer 1.
  • the configuration of the contact layer 8 may be appropriately determined as long as carriers such as molecules or electrons are supplied to the two-dimensional material layer 1.
  • the two-dimensional material layer 1 is immersed in a solution and carriers are supplied to the two-dimensional material layer 1 at the molecular level, so that the solid contact layer 8 is not formed on the two-dimensional material layer 1 and two.
  • Carriers may be doped into the dimensional material layer 1.
  • the configuration of the electromagnetic wave detector 100 according to the thirteenth embodiment can be applied to other embodiments.
  • the contact layer 8 is arranged so as to be in contact with at least one of the two-dimensional material layer 1 and the first electrode 2a. ..
  • the contact layer 8 is configured to supply holes or electrons to the two-dimensional material layer 1 by contacting at least one of the two-dimensional material layer 1 and the first electrode 2a. Therefore, the conductive type of the two-dimensional material layer 1 can be made into an n type or a p type. Thereby, even when the optical carrier is doped into the two-dimensional material layer 1 from the first electrode 2a and the semiconductor layer 4, the conductive type of the two-dimensional material layer 1 can be controlled. Therefore, the performance of the electromagnetic wave detector 100 can be improved.
  • the contact layer 8 may be arranged so as to be in contact with either one of the two-dimensional material layer 1 and the first electrode 2a and not to the other. In FIG. 31, they are arranged so as to be in contact with the two-dimensional material layer 1 and not with the first electrode 2a. As a result, a gradient of charge density is formed in the two-dimensional material layer 1, so that the mobility of the two-dimensional material layer 1 is improved. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • Embodiment 14 the configuration of the electromagnetic wave detector 100 according to the fourteenth embodiment will be described with reference to FIG. 32. Unless otherwise specified, the fourteenth embodiment has the same configuration, manufacturing method, and operation and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the two-dimensional material layer 1 according to the present embodiment includes the irregular layer structure portion 1T.
  • the disordered layer structure portion 1T is a structure in which a plurality of graphene layers are laminated in a state in which the lattices of the plurality of graphene layers are inconsistent.
  • the two-dimensional material layer 1 may include the irregular layer structure portion 1T as a part of the two-dimensional material layer 1, or the entire two-dimensional material layer 1 may be composed of the irregular layer structure portion 1T. ..
  • the material of the two-dimensional material layer 1 according to the present embodiment is laminated graphene.
  • the method for producing the disordered layer structure portion 1T may be appropriately determined.
  • the single-layer graphene produced by the CVD method may be transferred a plurality of times, and the multi-layer graphene may be laminated to form the disordered layer structure portion 1T.
  • ethanol or methane may be arranged on the graphene as a carbon source, and the graphene may be grown by the CVD method to form the disordered layer structure portion 1T.
  • the configuration of the electromagnetic wave detector 100 according to the fourteenth embodiment can be applied to other embodiments.
  • the two-dimensional material layer 1 includes the disordered layer structure portion 1T. Therefore, the mobility of carriers in the two-dimensional material layer 1 can be improved. Therefore, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • the normal laminated graphene that does not contain the random layer structure portion 1T is laminated in a state in which the lattices of the plurality of graphenes are aligned with each other.
  • This state is called AB lamination.
  • the laminated graphene containing the irregular layer structure portion 1T is formed as follows. Graphene produced by the CVD method has polycrystals. Therefore, when graphene is further transferred onto graphene multiple times, or when graphene is further laminated with the underlying graphene as the nucleus by the CVD method, the lattices of each of the plurality of graphenes are inconsistent. It is laminated with.
  • a disordered layer structure portion 1T is formed on graphene.
  • the graphene having a disordered layer structure constituting the disordered layer structure portion 1T is less affected by the interaction between the layers and has the same properties as the single layer graphene. Further, the mobility of the two-dimensional material layer 1 is lowered due to the influence of carrier scattering in the underlying insulating film.
  • the graphene in contact with the insulating film is affected by carrier scattering, but the graphene in the upper layer laminated on the graphene in the disordered layer structure is affected by the carrier scattering of the underlying insulating film. It becomes difficult to receive.
  • the influence of the interaction between the layers is small, so that the conductivity is also improved. From the above, the mobility of carriers is improved in graphene having a disordered layer structure. As a result, the sensitivity of the electromagnetic wave detector 100 can be improved.
  • Embodiment 15 the configuration of the electromagnetic wave detector 100 according to the fifteenth embodiment will be described.
  • the electromagnetic wave detector 100 according to the present embodiment detects electromagnetic waves according to the thirteenth embodiment shown in FIG. 30, in addition to the materials of the first insulating film 3a, the second insulating film 3b, the semiconductor layer 4 and the contact layer 8. It has the same structure as the vessel 100.
  • the fifteenth embodiment has the same configuration, manufacturing method, and effect as those of the thirteenth embodiment. Therefore, the same components as those in the thirteenth embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the electromagnetic wave detector 100 includes the contact layer 8. At least one of the materials of the first insulating film 3a, the second insulating film 3b, the semiconductor layer 4, and the contact layer 8 according to the present embodiment is a two-dimensional material because its characteristics are changed by being irradiated with electromagnetic waves. It is a material that gives a change in electric potential to layer 1.
  • the material that changes the potential of the two-dimensional material layer 1 by changing its characteristics when irradiated with electromagnetic waves is, for example, a ferroelectric material or rare earth oxidation. Things and so on.
  • the semiconductor layer 4 for example, the above-mentioned semiconductor material, pn junction material, metal, and semiconductor are bonded to the material that changes the potential of the two-dimensional material layer 1 by changing its characteristics when irradiated with an electromagnetic wave. Structures joined to metal, insulators and semiconductor bonding materials, pebro skids, etc.
  • the material that gives a change in potential to the two-dimensional material layer 1 by changing its characteristics by being irradiated with electromagnetic waves is, for example, a quantum dot, a liquid crystal material, a fullerene, a pebroskide, or the like.
  • ferroelectric material having a polarization effect (pyroelectric effect) due to electromagnetic waves
  • ferroelectric material is irradiated with electromagnetic waves to change the polarization of the ferroelectric material. ..
  • a change in potential occurs in the two-dimensional material layer 1.
  • a material that changes the potential of the two-dimensional material layer 1 by changing its characteristics when irradiated with electromagnetic waves is applied to the first insulating film 3a, the second insulating film 3b, the semiconductor layer 4, and the contact layer 8.
  • the contact layer 8 does not necessarily directly reach the two-dimensional material layer 1. You don't have to be in contact.
  • the contact layer 8 may be provided on the upper surface or the lower surface of the two-dimensional material layer 1 via an insulating film or the like (not shown).
  • the configuration of the electromagnetic wave detector 100 according to the fifteenth embodiment can be applied to other embodiments.
  • the electromagnetic wave detector 100 according to the fifteenth embodiment, as shown in FIG. 30, at least one of the first insulating film 3a, the second insulating film 3b, the semiconductor layer 4, and the contact layer 8 is an electromagnetic wave. It is a material that gives a change in potential to the two-dimensional material layer 1 by changing its characteristics when it is irradiated with. Therefore, the potential of the two-dimensional material layer 1 can be changed by irradiating at least one of the first insulating film 3a, the second insulating film 3b, the contact layer 8, and the semiconductor layer 4 with an electromagnetic wave.
  • Embodiment 16 Next, the configuration of the electromagnetic wave detector assembly 200 according to the 16th embodiment will be described with reference to FIGS. 33 and 34.
  • the electromagnetic wave detector assembly 200 has a plurality of electromagnetic wave detectors 100 according to the first to 14th embodiments and the 17th embodiment to be described later.
  • the plurality of electromagnetic wave detectors 100 are arranged side by side along at least one of the first direction DR1 and the second direction DR2 intersecting the first direction DR1.
  • the plurality of electromagnetic wave detectors 100 included in the electromagnetic wave detector aggregate 200 are the same electromagnetic wave detectors 100.
  • one second electrode 2b (see FIG. 1) is used as a common electrode in the plurality of electromagnetic wave detectors 100. May be good. As a result, the wiring of the electromagnetic wave detector assembly 200 can be reduced, so that the resolution of the electromagnetic wave detector assembly 200 can be increased.
  • Each of the semiconductor layers 4 (see FIG. 1) of the plurality of electromagnetic wave detectors 100 is separated from each other by, for example, providing a trench structure on the outer periphery of the semiconductor layer 4 (see FIG. 1).
  • the control electrode 2c may be shared with the first electrode 2a.
  • electromagnetic wave detector assembly 200 shown in FIG. 33 four electromagnetic wave detectors 100 are arranged in a 2 ⁇ 2 matrix, but the number of the arranged electromagnetic wave detectors 100 is not limited to this. Further, in the electromagnetic wave detector assembly 200 shown in FIG. 33, a plurality of electromagnetic wave detectors 100 are periodically arranged two-dimensionally, but the plurality of electromagnetic wave detectors 100 are periodically arranged in one direction. It may be arranged. Further, the intervals between the adjacent electromagnetic wave detectors 100 among the plurality of electromagnetic wave detectors 100 may be equal or different.
  • the electromagnetic wave detector assembly 200 may include a read circuit 93 configured to read a signal from the electromagnetic wave detector 100.
  • the electromagnetic wave detector 100 may be arranged on the readout circuit 93.
  • the read format of the read circuit 93 is, for example, a CTIA (Capacitive Transimpedance Amplifier) type.
  • the read circuit 93 may be in another read format.
  • the electromagnetic wave detector assembly 200 may include a bump 92 that electrically connects the electromagnetic wave detector 100 and the readout circuit 93.
  • the structure in which the electromagnetic wave detector 100 and the readout circuit 93 are connected by the bump 92 is called a hybrid junction. Hybrid junctions are a common structure in quantum infrared sensors.
  • the bump 92 and the electromagnetic wave detector 100 are electrically connected by a pad 91 provided on the control electrode 2c.
  • the material of the bump 92 is, for example, a conductive material such as indium (Ib).
  • the material of the pad 91 is a conductive material such as an aluminum silicon (Al—Si) alloy, nickel (Ni), or gold (Au).
  • the plurality of electromagnetic wave detectors included in the electromagnetic wave detector assembly 200 are electromagnetic wave detectors 101 to 104 that are different from each other. Electromagnetic wave detectors 101 to 104 of different types are arranged in an array (matrix). Each of the plurality of electromagnetic wave detectors 101 to 104 may have different detection wavelengths from each other. Specifically, each of the plurality of electromagnetic wave detectors 101 to 104 may have different detection wavelength selectivity. Further, each of the plurality of electromagnetic wave detectors 101 to 104 may be configured to detect electromagnetic waves having different polarizations from each other.
  • the semiconductor materials constituting each of the semiconductor layers 4 (see FIG. 1) of the plurality of electromagnetic wave detectors 101 to 104 may have different detection wavelengths from each other.
  • a semiconductor material whose detection wavelength is the wavelength of visible light and a semiconductor material whose detection wavelength is the wavelength of infrared rays may be used.
  • the electromagnetic wave detector assembly 200 when the electromagnetic wave detector assembly 200 is applied to an in-vehicle sensor, the electromagnetic wave detector assembly 200 can be used as a camera for a visible light image in the daytime. Further, the electromagnetic wave detector assembly 200 can also be used as an infrared camera at night. In this way, it is not necessary to use a plurality of cameras properly according to the detection wavelength of the electromagnetic wave.
  • the electromagnetic wave detector assembly 200 according to the 16th embodiment, as shown in FIG. 33, the electromagnetic wave detector assembly 200 has a plurality of electromagnetic wave detectors 100 according to the first to 14th embodiments. .. Therefore, by using each of the plurality of electromagnetic wave detectors 100 as a detection element, the electromagnetic wave detector aggregate 200 can be provided with a function as an image sensor.
  • each of the plurality of electromagnetic wave detectors 101 to 104 has different detection wavelengths from each other. Therefore, the electromagnetic wave detector assembly 200 can detect at least two or more electromagnetic waves having different wavelengths.
  • the electromagnetic wave detector assembly 200 has the wavelength of the electromagnetic wave in an arbitrary wavelength range such as ultraviolet light, infrared light, terahertz wave, and radio wave wavelength range, similarly to the image sensor used in the visible light range. Can be identified. As a result, it is possible to obtain a colorized image showing, for example, a difference in wavelength as a difference in color.
  • the electromagnetic wave detector assembly 200 can be used, for example, as a position detection sensor capable of detecting the position of an object even with a small number of pixels. Further, for example, the electromagnetic wave detector assembly 200 can be used as an image sensor capable of detecting the intensity of electromagnetic waves at a plurality of wavelengths. This makes it possible to detect a plurality of electromagnetic waves and obtain a colorized image without using a color filter conventionally required for CMOS (Complementary MOS) sensors and the like.
  • CMOS Complementary MOS
  • Each of the plurality of electromagnetic wave detectors 101 to 104 is configured to detect electromagnetic waves having different polarizations from each other.
  • the electromagnetic wave detector assembly 200 can be provided with a function as a polarization identification image sensor.
  • polarization imaging can be performed by arranging a plurality of electromagnetic wave detectors 100 for each unit, with four pixels having detection angles of 0 °, 90 °, 45 °, and 135 ° as one unit.
  • Polarization identification image sensors for example, distinguish between man-made objects and natural objects, identify materials, identify multiple objects with the same temperature in the infrared wavelength range, identify boundaries between multiple objects, or have equivalent resolution. Can be improved.
  • the electromagnetic wave detector aggregate 200 can detect electromagnetic waves in a wide wavelength range. Further, the electromagnetic wave detector assembly 200 can detect electromagnetic waves having different wavelengths.
  • Embodiment 17 Next, the configuration of the electromagnetic wave detector 100 according to the 17th embodiment will be described with reference to FIGS. 36 to 38. Unless otherwise specified, the 17th embodiment has the same configuration and operation and effect as those of the 1st embodiment. Therefore, the same components as those in the first embodiment are designated by the same reference numerals, and the description thereof will not be repeated.
  • the two-dimensional material layer 1 contains a pattern that causes plasmon resonance.
  • the pattern that causes plasmon resonance is a periodic striped pattern.
  • the two-dimensional material layer contains a plurality of strips 15.
  • the width d of each of the plurality of strips 15 is equal to each other.
  • the width d of each of the plurality of strips 15 is a dimension along the lateral direction of each of the plurality of strips 15.
  • adjacent strips 15 are arranged at equal intervals with a gap. That is, the plurality of strips 15 of the two-dimensional material layer 1 are periodically arranged.
  • the period p of the plurality of strips 15 is the sum of the width d of each of the plurality of strips 15 and the distance between the adjacent strips 15.
  • the plasmon resonance wavelength is determined according to the width d of each of the plurality of strips 15, the period p of the plurality of strips 15, and the Fermi level of the two-dimensional material layer 1. It should be noted that the width d of each of the plurality of strips 15 and the period p of the plurality of strips 15 have a relative relationship. For example, when the width d of each of the plurality of strips 15 is 40 nm, the period p of the plurality of strips 15 is 50 nm, and the chemical potential is 1.0 eV, the plasmon resonance wavelength is 4 ⁇ m.
  • the portion of the two-dimensional material layer 1 connected to the first electrode 2a does not have to be striped.
  • each of the plurality of strips 15 may have a plurality of first strips 151 and a plurality of second strips 152.
  • Each of the plurality of first strips 151 and each of the plurality of second strips 152 are alternately arranged along the longitudinal direction of the plurality of strips 15.
  • the width of each of the plurality of second strips 152 is larger than the width of each of the plurality of first strips 151.
  • the shapes of the plurality of first band-shaped portions 151 and the plurality of second strip-shaped portions 152 in the top view are quadrangular. Therefore, a square pattern is formed on the two-dimensional material layer 1.
  • the two-dimensional material layer 1 has a shape asymmetrical with respect to the longitudinal direction and the lateral direction of the plurality of strips 15. In other words, the two-dimensional material layer 1 has in-plane asymmetry in two independent directions.
  • the shape of the plurality of second strips 152 may be a circle, an ellipse, a square, a rectangle, or the like.
  • the control electrode 2c (see FIG. 1) is not shown in FIG. 38.
  • the two-dimensional material layer contains a pattern that causes plasmon resonance.
  • the plasmon resonance wavelength is determined according to the width d of each of the plurality of strips 15, the period p of the plurality of strips 15, and the Fermi level of the two-dimensional material layer 1. Therefore, the electromagnetic wave detector 100 can selectively absorb the light irradiated to the electromagnetic wave detector 100 by resonance absorption according to the plasmon resonance wavelength. Further, the electromagnetic wave detector 100 can enhance and absorb the light irradiated to the electromagnetic wave detector 100 by resonance absorption according to the plasmon resonance wavelength.
  • the electromagnetic wave detector 100 when the electromagnetic wave detector 100 is irradiated with light having a plasmon resonance wavelength, the electric field is enhanced on the two-dimensional material layer 1. As a result, the photoelectric conversion efficiency in the semiconductor layer 4 in contact with the two-dimensional material layer 1 is enhanced. Therefore, the sensitivity of the electromagnetic wave detector 100 can be selectively increased at the resonance wavelength.
  • the plasmon resonance wavelength can be fixed by adjusting the width d and the period p of the plurality of strips 15. Further, the plasmon resonance wavelength can be electrically changed by adjusting the chemical potential of the two-dimensional material layer 1 with the control electrode. Therefore, the above-mentioned selective detection wavelength can be electrically controlled.
  • each of the plurality of strips 15 may have a plurality of first strips 151 and a plurality of second strips 152.
  • the width of each of the plurality of second strips 152 is larger than the width of each of the plurality of first strips 151.
  • the shape of the two-dimensional material layer 1 has a shape asymmetrical with respect to the longitudinal direction and the lateral direction of the plurality of strips 15.
  • the asymmetry of the two-dimensional material layer 1 also causes asymmetry in the plasmon resonance. Therefore, polarized light can be selectively detected.
  • the electromagnetic wave detector 100 can be applied to polarized light imaging and the like.

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4167302A4 (en) * 2020-06-15 2023-12-13 Mitsubishi Electric Corporation ELECTROMAGNETIC WAVE DETECTOR AND ELECTROMAGNETIC WAVE DETECTOR ARRAY
WO2024100784A1 (ja) * 2022-11-09 2024-05-16 三菱電機株式会社 電磁波検出器および電磁波検出器集合体

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021206526A1 (de) * 2021-06-24 2022-12-29 Martin-Luther-Universität Halle-Wittenberg, Körperschaft des öffentlichen Rechts Tunneldiode mit negativem differentiellen Widerstand und Verfahren zur Herstellung
WO2025046162A1 (en) * 2023-08-25 2025-03-06 Aalto University Foundation Sr Spectrometer
CN119364874B (zh) * 2024-12-23 2025-07-29 国科大杭州高等研究院 一种基于微结构调控的钽镍硒中红外探测器及其应用
CN120018476B (zh) * 2025-02-24 2025-10-10 安徽大学 一种光驱动的频带可调电磁屏蔽装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015045629A (ja) * 2013-04-26 2015-03-12 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
JP2016025356A (ja) * 2014-07-18 2016-02-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置
US20170256667A1 (en) * 2016-03-02 2017-09-07 Gwangju Institute Of Science And Technology Graphene-semiconductor schottky junction photodetector of having tunable gain
WO2019171622A1 (ja) * 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
WO2020003613A1 (ja) * 2018-06-26 2020-01-02 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014036002A1 (en) 2012-08-28 2014-03-06 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
US9680038B2 (en) * 2013-03-13 2017-06-13 The Regents Of The University Of Michigan Photodetectors based on double layer heterostructures
WO2018012076A1 (ja) * 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
US11296251B2 (en) 2018-03-06 2022-04-05 Mitsubishi Electric Corporation Electromagnetic wave detector and electromagnetic wave detector array including the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015045629A (ja) * 2013-04-26 2015-03-12 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
JP2016025356A (ja) * 2014-07-18 2016-02-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置
US20170256667A1 (en) * 2016-03-02 2017-09-07 Gwangju Institute Of Science And Technology Graphene-semiconductor schottky junction photodetector of having tunable gain
WO2019171622A1 (ja) * 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
WO2020003613A1 (ja) * 2018-06-26 2020-01-02 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4167302A4 (en) * 2020-06-15 2023-12-13 Mitsubishi Electric Corporation ELECTROMAGNETIC WAVE DETECTOR AND ELECTROMAGNETIC WAVE DETECTOR ARRAY
WO2024100784A1 (ja) * 2022-11-09 2024-05-16 三菱電機株式会社 電磁波検出器および電磁波検出器集合体

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