JP7499857B2 - 電磁波検出器および電磁波検出器集合体 - Google Patents

電磁波検出器および電磁波検出器集合体 Download PDF

Info

Publication number
JP7499857B2
JP7499857B2 JP2022532298A JP2022532298A JP7499857B2 JP 7499857 B2 JP7499857 B2 JP 7499857B2 JP 2022532298 A JP2022532298 A JP 2022532298A JP 2022532298 A JP2022532298 A JP 2022532298A JP 7499857 B2 JP7499857 B2 JP 7499857B2
Authority
JP
Japan
Prior art keywords
dimensional material
electromagnetic wave
material layer
wave detector
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022532298A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021256018A1 (https=
JPWO2021256018A5 (https=
Inventor
新平 小川
政彰 嶋谷
昌一郎 福島
聡志 奥田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2021256018A1 publication Critical patent/JPWO2021256018A1/ja
Publication of JPWO2021256018A5 publication Critical patent/JPWO2021256018A5/ja
Application granted granted Critical
Publication of JP7499857B2 publication Critical patent/JP7499857B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction

Landscapes

  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2022532298A 2020-06-17 2021-03-10 電磁波検出器および電磁波検出器集合体 Active JP7499857B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020104531 2020-06-17
JP2020104531 2020-06-17
PCT/JP2021/009596 WO2021256018A1 (ja) 2020-06-17 2021-03-10 電磁波検出器および電磁波検出器集合体

Publications (3)

Publication Number Publication Date
JPWO2021256018A1 JPWO2021256018A1 (https=) 2021-12-23
JPWO2021256018A5 JPWO2021256018A5 (https=) 2022-12-28
JP7499857B2 true JP7499857B2 (ja) 2024-06-14

Family

ID=79267813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022532298A Active JP7499857B2 (ja) 2020-06-17 2021-03-10 電磁波検出器および電磁波検出器集合体

Country Status (4)

Country Link
US (1) US12295176B2 (https=)
JP (1) JP7499857B2 (https=)
CN (1) CN115803897A (https=)
WO (1) WO2021256018A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7550854B2 (ja) * 2020-06-15 2024-09-13 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
DE102021206526A1 (de) * 2021-06-24 2022-12-29 Martin-Luther-Universität Halle-Wittenberg, Körperschaft des öffentlichen Rechts Tunneldiode mit negativem differentiellen Widerstand und Verfahren zur Herstellung
WO2024100784A1 (ja) * 2022-11-09 2024-05-16 三菱電機株式会社 電磁波検出器および電磁波検出器集合体
WO2025046162A1 (en) * 2023-08-25 2025-03-06 Aalto University Foundation Sr Spectrometer
CN119364874B (zh) * 2024-12-23 2025-07-29 国科大杭州高等研究院 一种基于微结构调控的钽镍硒中红外探测器及其应用
CN120018476B (zh) * 2025-02-24 2025-10-10 安徽大学 一种光驱动的频带可调电磁屏蔽装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015045629A (ja) 2013-04-26 2015-03-12 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
JP2016025356A (ja) 2014-07-18 2016-02-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置
US20170256667A1 (en) 2016-03-02 2017-09-07 Gwangju Institute Of Science And Technology Graphene-semiconductor schottky junction photodetector of having tunable gain
WO2019171622A1 (ja) 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
WO2020003613A1 (ja) 2018-06-26 2020-01-02 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014036002A1 (en) 2012-08-28 2014-03-06 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
US9680038B2 (en) * 2013-03-13 2017-06-13 The Regents Of The University Of Michigan Photodetectors based on double layer heterostructures
WO2018012076A1 (ja) * 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
US11296251B2 (en) 2018-03-06 2022-04-05 Mitsubishi Electric Corporation Electromagnetic wave detector and electromagnetic wave detector array including the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015045629A (ja) 2013-04-26 2015-03-12 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
JP2016025356A (ja) 2014-07-18 2016-02-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置
US20170256667A1 (en) 2016-03-02 2017-09-07 Gwangju Institute Of Science And Technology Graphene-semiconductor schottky junction photodetector of having tunable gain
WO2019171622A1 (ja) 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
WO2020003613A1 (ja) 2018-06-26 2020-01-02 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ

Also Published As

Publication number Publication date
US12295176B2 (en) 2025-05-06
US20230282759A1 (en) 2023-09-07
CN115803897A (zh) 2023-03-14
JPWO2021256018A1 (https=) 2021-12-23
WO2021256018A1 (ja) 2021-12-23

Similar Documents

Publication Publication Date Title
JP7499857B2 (ja) 電磁波検出器および電磁波検出器集合体
US10784394B2 (en) Electromagnetic wave detector and electromagnetic wave detector array
JP6884288B1 (ja) 電磁波検出器
JP6642769B1 (ja) グラフェンを用いた電子デバイスの製造方法
JP7550854B2 (ja) 電磁波検出器および電磁波検出器アレイ
JP7374222B2 (ja) 電磁波検出器および電磁波検出器集合体
JP7123282B1 (ja) 電磁波検出器および電磁波検出器アレイ
JP7433533B1 (ja) 電磁波検出器および電磁波検出器アレイ
US20250185514A1 (en) Electromagnetic wave detector and electromagnetic wave detector array
JP7399361B2 (ja) 電磁波検出器及び電磁波検出器アレイ
JP7740896B2 (ja) 電磁波検出器および電磁波検出器集合体
JP7431400B2 (ja) 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法
JP7341373B1 (ja) 電磁波検出器、電磁波検出器アレイ及び画像センサ
US20230343882A1 (en) Electromagnetic wave detector and electromagnetic wave detector array
WO2023181593A1 (ja) 電磁波検出器、電磁波検出器アレイ及び画像センサ
WO2023112770A1 (ja) 電磁波検出器及び電磁波検出器アレイ
JP7562054B1 (ja) 電磁波検出器及び電磁波検出器アレイ
WO2024100784A1 (ja) 電磁波検出器および電磁波検出器集合体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221004

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20221004

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231205

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20240201

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240226

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240507

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240604

R150 Certificate of patent or registration of utility model

Ref document number: 7499857

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150