CN115803897A - 电磁波检测器以及电磁波检测器组件 - Google Patents

电磁波检测器以及电磁波检测器组件 Download PDF

Info

Publication number
CN115803897A
CN115803897A CN202180038946.5A CN202180038946A CN115803897A CN 115803897 A CN115803897 A CN 115803897A CN 202180038946 A CN202180038946 A CN 202180038946A CN 115803897 A CN115803897 A CN 115803897A
Authority
CN
China
Prior art keywords
electromagnetic wave
dimensional material
material layer
wave detector
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180038946.5A
Other languages
English (en)
Chinese (zh)
Inventor
小川新平
岛谷政彰
福岛昌一郎
奥田聪志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN115803897A publication Critical patent/CN115803897A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction

Landscapes

  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
CN202180038946.5A 2020-06-17 2021-03-10 电磁波检测器以及电磁波检测器组件 Pending CN115803897A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-104531 2020-06-17
JP2020104531 2020-06-17
PCT/JP2021/009596 WO2021256018A1 (ja) 2020-06-17 2021-03-10 電磁波検出器および電磁波検出器集合体

Publications (1)

Publication Number Publication Date
CN115803897A true CN115803897A (zh) 2023-03-14

Family

ID=79267813

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180038946.5A Pending CN115803897A (zh) 2020-06-17 2021-03-10 电磁波检测器以及电磁波检测器组件

Country Status (4)

Country Link
US (1) US12295176B2 (https=)
JP (1) JP7499857B2 (https=)
CN (1) CN115803897A (https=)
WO (1) WO2021256018A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119364874A (zh) * 2024-12-23 2025-01-24 国科大杭州高等研究院 一种基于微结构调控的钽镍硒中红外探测器及其应用
WO2025046162A1 (en) * 2023-08-25 2025-03-06 Aalto University Foundation Sr Spectrometer

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7550854B2 (ja) * 2020-06-15 2024-09-13 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
DE102021206526A1 (de) * 2021-06-24 2022-12-29 Martin-Luther-Universität Halle-Wittenberg, Körperschaft des öffentlichen Rechts Tunneldiode mit negativem differentiellen Widerstand und Verfahren zur Herstellung
WO2024100784A1 (ja) * 2022-11-09 2024-05-16 三菱電機株式会社 電磁波検出器および電磁波検出器集合体
CN120018476B (zh) * 2025-02-24 2025-10-10 安徽大学 一种光驱动的频带可调电磁屏蔽装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014036002A1 (en) 2012-08-28 2014-03-06 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
US9680038B2 (en) * 2013-03-13 2017-06-13 The Regents Of The University Of Michigan Photodetectors based on double layer heterostructures
JP6161554B2 (ja) * 2013-04-26 2017-07-12 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
KR102237826B1 (ko) 2014-07-18 2021-04-08 삼성전자주식회사 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치
KR101938934B1 (ko) * 2016-03-02 2019-04-10 광주과학기술원 이득조절이 가능한 그래핀-반도체 쇼트키 접합 광전소자
WO2018012076A1 (ja) * 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
US11296251B2 (en) 2018-03-06 2022-04-05 Mitsubishi Electric Corporation Electromagnetic wave detector and electromagnetic wave detector array including the same
CN111788700B (zh) 2018-03-06 2024-06-28 三菱电机株式会社 电磁波检测器以及具备该电磁波检测器的电磁波检测器阵列
CN112292763B (zh) 2018-06-26 2024-04-05 三菱电机株式会社 电磁波检测器以及电磁波检测器阵列

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025046162A1 (en) * 2023-08-25 2025-03-06 Aalto University Foundation Sr Spectrometer
CN119364874A (zh) * 2024-12-23 2025-01-24 国科大杭州高等研究院 一种基于微结构调控的钽镍硒中红外探测器及其应用

Also Published As

Publication number Publication date
US12295176B2 (en) 2025-05-06
US20230282759A1 (en) 2023-09-07
JP7499857B2 (ja) 2024-06-14
JPWO2021256018A1 (https=) 2021-12-23
WO2021256018A1 (ja) 2021-12-23

Similar Documents

Publication Publication Date Title
JP6642769B1 (ja) グラフェンを用いた電子デバイスの製造方法
JP7499857B2 (ja) 電磁波検出器および電磁波検出器集合体
JP6884288B1 (ja) 電磁波検出器
US10784394B2 (en) Electromagnetic wave detector and electromagnetic wave detector array
JP7550854B2 (ja) 電磁波検出器および電磁波検出器アレイ
CN111788700A (zh) 电磁波检测器以及具备该电磁波检测器的电磁波检测器阵列
JP7374222B2 (ja) 電磁波検出器および電磁波検出器集合体
JP7345593B2 (ja) 電磁波検出器および電磁波検出器アレイ
US20250327704A1 (en) Electromagnetic wave detector and electromagnetic wave detector array
JP7399361B2 (ja) 電磁波検出器及び電磁波検出器アレイ
JP7740896B2 (ja) 電磁波検出器および電磁波検出器集合体
US12543402B2 (en) Electromagnetic wave detector including a photoelectric conversion element and a plasmon filter, and electromagnetic wave detector array
JP7431400B2 (ja) 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法
JP7341373B1 (ja) 電磁波検出器、電磁波検出器アレイ及び画像センサ
WO2023181593A1 (ja) 電磁波検出器、電磁波検出器アレイ及び画像センサ
WO2023112770A1 (ja) 電磁波検出器及び電磁波検出器アレイ
JP7562054B1 (ja) 電磁波検出器及び電磁波検出器アレイ
WO2024100784A1 (ja) 電磁波検出器および電磁波検出器集合体

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination