CN105679857A - 一种基于硅量子点/石墨烯/硅异质结构的光电传感器 - Google Patents

一种基于硅量子点/石墨烯/硅异质结构的光电传感器 Download PDF

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CN105679857A
CN105679857A CN201610039114.6A CN201610039114A CN105679857A CN 105679857 A CN105679857 A CN 105679857A CN 201610039114 A CN201610039114 A CN 201610039114A CN 105679857 A CN105679857 A CN 105679857A
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徐杨
王�锋
万霞
施添锦
王雪
俞滨
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Zhejiang University ZJU
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Abstract

本发明公开了一种基于硅量子点/石墨烯/硅异质结构的光电传感器，该光电传感器自下而上依次有底电极、n型硅衬底和二氧化硅隔离层，二氧化硅隔离层上开有窗口，窗口内n型硅基体暴露出来，二氧化硅隔离层上设有顶电极，顶电极上叠盖有单层石墨烯和硅量子点薄膜层，单层石墨烯与窗口内的n型硅基体接触形成石墨烯/硅肖特基结。本发明的光电传感器是在肖特基结构基础上的优化和改进，除了具有肖特基结本身具有的优点外，还利用硅量子点作为响应增大层，能有效提高器件在整个波段的响应度，尤其是紫外和可见部分的响应度，解决了传统硅基PIN结对紫外光探测响应低的问题。该探测器在极低的反向偏压下即可工作，是一种应用前景可观的低能耗器件。

Description

一种基于硅量子点/石墨烯/硅异质结构的光电传感器
技术领域
本发明属于石墨烯新型传感器应用领域，尤其涉及一种基于硅量子点/石墨烯/硅的光电传感器。
背景技术
光电探测器在通信、计算机技术、医疗卫生、空间技术等领域有着广泛的应用。肖特基结光电探测器具有高灵敏度，高光学响应，响应速度快等优点，在高速信号调制、微弱信号探测等方面有重要应用。传统硅基光电探测器件，无论是通过热扩散还是离子注入工艺加工的器件，它们对紫外光和部分可见光都存在死层，即光电响应非常小，而且响应度随入射光波长的减小而迅速降低。
二维晶体在平面内具有无限重复的周期结构,但在垂直于平面的方向只具有纳米尺度,因此,二维晶体可以看作是具有宏观尺度的纳米材料,可表现出许多独特的性质具有优异的力、热、光、电等性能。与普通金属不同，石墨烯是一种具有透明和柔性的新型二维导电材料。石墨烯和硅接触可以形成肖特基结，制备工艺简单，在光电探测领域有广泛应用。由于石墨烯和硅之间有一个功函差，所以电子从功函较高的硅界面向功函较低的石墨烯界面运动，界面的固定电荷处形成一个指向石墨烯方向的电场，当建立起一定宽度的空间电荷区后，电场引起的电子漂移运动和浓度不同引起的电子扩散运动达到相对的平衡，形成具有整流特性的肖特基势垒。肖特基结器件是一种多数载流子导电器件，在高频中有广泛的应用。由于p-n结正向导通时，从p区注入n去的空穴或从n区注入p区的电子，都是少数载流子，它们需要先形成一定的积累，然后靠扩散运动形成电流。这种注入的非平衡载流子的积累称为电荷存储效应，严重地影响了p-n结的高频性能。而肖特基势垒二极管的正向电流，主要是由半导体中的多数载流子进入金属形成的。它是多子载流子器件。例如对于金属和n型半导体的接触，正向导通时，从半导体中月过界面进入金属的电子并不发生积累，而是直接成为漂移电流而流走。因此肖特基势垒二极管比p-n结二极管有更好的高频特性，同时还具有导通压降较低、开关速度快、损耗小等优点。
发明内容
本发明的目的在于针对现有技术的不足，提供一种基于硅量子点/石墨烯/硅异质结构的光电传感器。这种光电传感器响应范围广(300～1100nm)，响应和恢复速度较快，且其制备方法是基于半导体成熟的硅工艺，能直接集成到电路上，制成光电传感器芯片。
本发明的基于硅量子点/石墨烯/硅的光电传感器，自下而上依次有底电极、n型硅衬底和二氧化硅隔离层，所述的二氧化硅隔离层上开有窗口，窗口内n型硅基体暴露出来，二氧化硅隔离层上表面设有顶电极，顶电极上叠盖有单层石墨烯和硅量子点薄膜层，单层石墨烯与窗口区域内的n型硅基体接触形成石墨烯/硅肖特基结，顶电极的边界小于二氧化硅隔离层的边界，单层石墨烯和硅量子点薄膜层的边界均小于顶电极的外边界。
其中，所述的n型硅衬底的厚度通常为500μm左右，电阻率为1～10Ω·cm。
所述的二氧化硅隔离层的厚度为300～500nm。
所述的硅量子点薄膜层的厚度为50～60nm。
所述的顶电极是与石墨烯形成欧姆接触的电极，优选铬金电极，厚度比例为5nm：50nm。
本发明形成的硅量子点/石墨烯/硅异质结构光电传感器是在肖特基结构基础上优化和改进，除了具有肖特基结本身具有的优点，如依靠多子传输，响应速度快，反应灵敏外，还利用硅量子点作为响应增大层，能有效提高器件在整个波段的响应度，尤其是紫外和可见部分的响应度，解决了传统硅基PIN结对紫外光探测响应低的问题。当然传感器还利用到了石墨烯特有的透明性，高电导率，高机械强度等特点，非常适用于超常规条件下的特殊应用。该探测器在极低的反向偏压下即可工作，是一种非常有实用价值的低能耗器件。这种结构的光电传感器，制作简便，能快速简便测量，可与成熟的半导体硅技术结合封装制备成集成传感器，市场化前景可观。
附图说明
图1为本发明基于硅量子点/石墨烯/硅异质结构的光电传感器的三维结构示意图；
图2为本发明基于硅量子点/石墨烯/硅异质结构的光电传感器的剖面结构示意图；
图中:n型硅衬底1、二氧化硅隔离层2、硅窗口3、顶电极4、单层石墨烯5、硅量子点薄膜6和底电极7。
图3为基于硅量子点/石墨烯/硅异质结构的光电传感器测试结果。
具体实施方式
参照图1和图2，本发明基于硅量子点/石墨烯/硅异质结构的光电传感器，自下而上依次有底电极7、n型硅基体1、二氧化硅隔离层2，所述的二氧化硅隔离层2上开有窗口3，二氧化硅隔离层上表面设有顶电极4，顶电极4上叠盖有单层石墨烯5和硅量子点薄膜6，单层石墨烯5与窗口3内的n型硅基体接触形成石墨烯/硅肖特基结，顶电极4的边界小于二氧化硅隔离层2的边界，单层石墨烯5和硅量子点烯薄膜层6的边界均小于顶电极4的外边界。
其中，所述的n型硅基体采用厚度为300～500μm，电阻率为1～10Ω·cm的n型硅。
所述的二氧化硅隔离层的厚度为300～500nm。
所述的硅量子点薄膜的厚度为50～60nm。
所述的顶电极是与石墨烯形成欧姆接触的电极，优选铬金电极，厚度比例为5：50nm。
采用本发明制备的硅量子点/石墨烯/硅肖特基异质结构的光电传感器，响应范围在300nm的紫外区域，一直到1100nm以上的红外波段区域都有很大的响应度，响应曲线如图3所示。本发明中的光电传感器可以扩展到采用成熟的工业半导体硅技术结合封装制备成集成传感器，市场化前景可观。

Claims (5)

1.基于硅量子点/石墨烯/硅的光电传感器，其特征在于，自下而上依次是底电极(7)、n型硅衬底(1)、二氧化硅隔离层(2)，所述的二氧化硅隔离层(2)上开有窗口(3)使n型硅基体暴露，二氧化硅隔离层上表面设有顶电极(4)，顶电极(4)上叠盖有单层石墨烯(5)和硅量子点薄膜层(6)，单层石墨烯(5)与窗口(3)内的n型硅基体接触形成石墨烯/硅肖特基结，单层石墨烯(5)与顶电极(4)形成欧姆接触，顶电极(4)的边界小于二氧化硅隔离层(2)的边界，单层石墨烯(5)和硅量子点薄膜层(6)的边界均小于顶电极(4)的外边界。
2.根据权利要求1所述的基于硅量子点/石墨烯/硅的光电传感器，其特征在于，所述的硅量子点薄膜层(6)的厚度为50～60nm。
3.根据权利要求1所述的基于硅量子点/石墨烯/硅的光电传感器，其特征在于，所述的二氧化硅隔离层(2)厚度为300～500nm。
4.根据权利要求1所述的基于硅量子点/石墨烯/硅的光电传感器，其特征在于，所述的顶电极(4)采用铬金电极。
5.根据权利要求4所述的基于硅量子点/石墨烯/硅的光电传感器，其特征在于，所述的顶电极中铬层与金层的厚度分别为5nm和50nm。
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