CN115312488A - 半导体封装、半导体封装制造方法及适用于其的金属桥 - Google Patents

半导体封装、半导体封装制造方法及适用于其的金属桥 Download PDF

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CN115312488A
CN115312488A CN202210009221.XA CN202210009221A CN115312488A CN 115312488 A CN115312488 A CN 115312488A CN 202210009221 A CN202210009221 A CN 202210009221A CN 115312488 A CN115312488 A CN 115312488A
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substrate
semiconductor package
metal bridge
metal
bonded
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崔伦华
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Jmj Korea Co ltd
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Jmj Korea Co ltd
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Abstract

本发明涉及一种借助于弯曲形成而具有弹性的非垂直结构的金属桥而能够吸收降低或迂回分散膜制时的按压应力，从而，能够保护半导体芯片的半导体封装、半导体封装制造方法及适用于其的金属桥。

Description

半导体封装、半导体封装制造方法及适用于其的金属桥
技术领域
本发明涉及一种借助于弯曲形成而具有弹性的非垂直结构的金属桥而能够吸收降低或迂回分散膜制时的按压应力，从而，能够保护半导体芯片的半导体封装、半导体封装制造方法及适用于其的金属桥。
背景技术
一般而言，半导体封装包括：在下部基板或上部基板上贴装的半导体芯片；粘接在半导体芯片上起到隔片作用的金属柱即导电体；由Cu构成而供应外部电性信号的引线框架及由密封材料膜制的封装外壳，并且，半导体芯片被粘接在引线框架焊盘上，引线框架的引线介入由Ag构成的镀金层，而通过信号线即键合引线与半导体芯片的焊盘电性连接。
例如，如图1的a所示，以往的半导体封装在下部金属绝缘基板11A上介入一次接合部12与半导体芯片14接合，金属隔片即垂直结构的六面体型或圆筒形导电体17介入2次接合部16在半导体芯片14上接合，在上部金属绝缘基板11B上介入3次接合部13接合，并且，形成有为下部金属绝缘基板11A与上部金属绝缘基板11B之间的电性连接的垂直结构的金属桥。
但，半导体芯片分别介入焊料而与基板及导电体接合时，因基板11A,11B和导电体17与一次接合部12及二次接合部16相互之间的不同的热膨胀系数(CTE；Coefficient ofThermal Expansion)，如图1(b)例示所示，在一次接合部12或二次接合部16产生裂纹(crack)而发生可靠性问题。
即，因CTE差异的接合部的裂纹的主要原因是在半导体芯片表面接合的金属隔片直接垂直地与上部金属绝缘基板接合，而在为了形成封装外壳膜制时，膜制模型加压上部金属绝缘基板和金属隔片，对半导体芯片直接给予冲击，而降低产品收益率。
并且，为了最小化与半导体芯片的CTE差异，代替金属隔片或金属柱，也可选定与半导体芯片的CTE类似的材料使用，但，相比以往的金属隔片或金属柱的价格高很多，因此，降低产品的价格竞争力。
【先行技术文献】
【专利文献】
(专利文献1)韩国登录专利公报第1643332号(利用超音波焊接的封装黏着半导体封装及其制造方法,2016.07.21)
(专利文献2)韩国登录专利公报第10-0867573号(改善热释放能力的电力用模块封装及其制造方法,2008.11.10)
(专利文献3)韩国公开专利公报第2001-0111736号(直接附着在引线框架的背面的绝缘散热板的电力模块封装,2001.12.20)
发明内容
发明要解决的技术问题
本发明的思想要实现的技术问题是提供一种半导体封装、半导体封装制造方法及适用于其的金属桥，通过弯曲形成而具有弹性的非垂直结构的金属桥吸收并降低或迂回分散膜制时的按压应力，从而，能够保护半导体芯片的半导体封装、半导体封装制造方法及适用于其的金属桥。
解决问题的技术方案
为了实现上述目的，本发明一种半导体封装，包括：第1基板，其为了电性连接而形成有特定金属图案；第2基板，其与所述第1基板相对地分隔形成，并且，为了电性连接而形成有特定金属图案；一个以上的半导体芯片，其一侧面介入第1导电性粘接剂而与所述第1基板、所述第2基板或所述第1基板和所述第2基板接合；金属桥，其一端介入第2导电性粘接剂与所述半导体芯片的另一侧面接合，另一端介入第3导电性粘接剂与所述第2基板、所述第1基板或所述第1基板和所述第2基板接合，并且，具有弹性以特定形状弯曲形成；封装外壳，其包裹所述半导体芯片和所述金属桥的至少一部分；及一个以上的终端引线，其与所述第1基板、所述第2基板、或所述金属桥电性连接，并向所述封装外壳外部，并且，为了在所述第1基板与所述第2基板之间接合所述金属桥的所述第2导电性粘接剂的中心与所述第3导电性粘接剂的中心之间的水平接合距离(H)为0.5㎜至7㎜，所述金属桥的一端与另一端之间的垂直接合距离(V)为0.1㎜至5㎜。
并且，所述第1基板或所述第2基板包括一个以上的绝缘层。
并且，所述第1基板或所述第2基板由金属材料或绝缘材料形成。
并且，所述第1基板或所述第2基板由一个以上的金属层和一个以上的绝缘层和一个以上的金属层的层积结构形成。
并且，与所述第1导电性粘接剂接合的所述第1基板或所述第2基板的金属层厚度,或与所述第3导电性粘接剂接合的所述第2基板或所述第1基板的金属层的厚度为15μm至2㎜。
并且，所述金属桥的厚度为0.1㎜至2mm。
并且，所述金属桥的热导率为200W/(m-k)至500W/(m-k)。
并且，所述金属桥包括Cu及Fe中的某一个以上的成分。
并且，所述第1至第3导电性粘接剂包括Ag、Cu及Sn中的某一个以上的成分。
并且，所述第1至第3导电性粘接剂的厚度为10μm至500μm。
并且，所述金属桥与所述一个以上的半导体芯片的上面接合，向所述封装外壳外部延伸裸露，而起到终端引线的功能。
并且，所述金属桥与所述一个以上的半导体芯片的上面接合，并且，与所述第1基板或所述第2基板或所述第1基板和所述第2基板接合，向所述封装外壳外部延伸裸露，而起到终端引线的功能。
并且，所述金属桥的一端与所述一个以上的半导体芯片的上面接合，所述金属桥的另一端与所述第1基板、所述第2基板或所述第1基板和所述第2基板接合。
并且，所述金属桥的一端与所述一个以上的半导体芯片的上面接合，
所述金属桥的另一端与所述一个以上的终端引线电性连接。
并且，所述终端引线的一端通过连接材料与所述封装外壳内部的所述第1基板、所述第2基板或所述第1基板和所述第2基板电性连接。
并且，所述连接材料为导电性粘接剂，所述终端引线的一端通过所述导电性粘接剂与所述第1基板或所述第2基板或所述第1基板和所述第2基板电性连接，或所述终端引线的一端通过超音波焊接与所述第1基板或所述第2基板或所述第1基板和所述第2基板直接电性连接。
并且，所述第1基板、所述第2基板或所述第1基板和所述第2基板的至少一部分向所述封装外壳的一面裸露。
并且，与所述半导体芯片的上面接合的所述金属桥的厚度大于所述第1基板或所述第2基板的绝缘层的厚度。
并且，所述半导体芯片为IGBT、二极管、MOSFET或JFET。
并且，上述的半导体封装可使用于逆变器、转换器或OBC的驱动。
本发明的另一实施例提供一种制造上述的半导体封装的半导体封装制造方法。
本发明的又另一实施例提供一种适用于上述的半导体封装的金属桥。
发明的效果
根据本发具有如下效果，替代与半导体芯片的CTE类似的材料形成的高价的垂直结构的金属隔片而提高价格竞争力，并且，通过弯曲形成具有弹性的非垂直结构的金属桥吸收降低或迂回分散膜制时的按压应力，从而，能够保护半导体芯片，并防止半导体芯片与金属桥之间的接合区域发生粘接剂的裂纹。
附图说明
图1示例以往技术的半导体封装；
图2表示本发明的一实施例的半导体封装的截面结构；
图3表示图2的半导体封装的第1例；
图4表示图2的半导体封装的第2例；
图5表示图2的半导体封装的第3例；
图6表示图2的半导体封装的第4例；
图7表示体现图5的第3例的半导体封装的立体图；
图8表示图7的半导体封装的截面结构；
图9表示图7的半导体封装的分解立体图；
图10示例适用图7的半导体封装的整体产品设计；
图11示例图10的分解立体图。
附图符号标记
110:第1基板 111:金属层
112:绝缘层 113:金属层
120:第2基板 121:金属层
122:绝缘层 123:金属层
130:半导体芯片 131:第1导电性粘接剂
140:金属桥 141:第2导电性粘接剂
142:第3导电性粘接剂 143:粘接剂
150:封装外壳 160:终端引线
161:导电性粘接剂 162,163:连接材料
170:引线框架
具体实施方式
以下，参照附图更详细地说明具有上述特征的本发明的实施例。
根据本发明的一实施例的半导体封装，包括：为电性连接而形成有特定金属图案的第1基板110；相对于第1基板110分隔形成，为电性连接而形成有特定金属图案的第2基板120；在第1基板110、第2基板120、或第1基板110和第2基板120上，一侧面介入形成第1导电性粘接剂131而接合的一个以上的半导体芯片130；一端与半导体芯片130的另一侧面介入第2导电性粘接剂141而接合，另一端与第2基板120、第1基板110、或第1基板110和第2基板120介入第3导电性粘接剂142而接合，并且，具有弹性地以特定形状弯曲形成的金属桥140；包裹半导体芯片130和金属桥140的至少一部分的封装外壳150；及与第1基板110,第2基板120或金属桥140电性连接，向封装外壳150外部裸露的一个以上的终端引线160，并且，为第1基板110与第2基板120之间接合金属桥140的第2导电性粘接剂141的中心与第3导电性粘接剂142的中心之间的水平接合距离H为0.5㎜至7㎜，金属桥140的一端与另一端之间的垂直接合距离V为0.1㎜至5㎜，因此，通过具有弹性的金属桥分散对于半导体芯片130的膜制时的按压应力。
以下，参照图2至图6详细说明上述构成的半导体封装。
首先，在第1基板110贴装一个以上的半导体芯片130，并且，第1基板110是为了电性连接形成有特定金属图案的下部基板。
然后，第2基板120是相对于第1基板110分隔形成，并且，为了电性连接而形成有特定金属图案的上部基板。并且，如图2至图5所示，在第2基板120上可未贴装半导体芯片130，也可如图6，贴装有半导体芯片130。
在此，第1基板110或第2基板120可包括Al2O3(陶瓷)或AlN等一个以上的绝缘层。
并且，第1基板110或第2基板120可由金属材料或绝缘材料形成。
并且，第1基板110或第2基板120可由一个以上的金属层111,121和Al2O3(陶瓷)或AlN等一个以上的绝缘层112,122和一个以上的金属层113,123的层积结构形成。
并且，与第1导电性粘接剂131接合的第1基板110或第2基板120,或与第3导电性粘接剂142接合的第2基板120或第1基板110的各个金属层113,123的厚度可为15μm至2㎜。在此，各个金属层113,123由单一金属层构成，或由合金金属层构成，或由镀金形态的金属层构成。
并且，在半导体芯片130的上面接合的金属桥140的厚度相比第1基板110或第2基板120的绝缘层112,122的厚度更大。
然后，半导体芯片130由一个以上构成，在第1基板110上(参照图2至图5)或第1基板110和第2基板120上(参照图6)各个一侧面介入第1导电性粘接剂131而接合。
并且，半导体芯片130为电力用半导体芯片的IGBT(Insulated Gate BipolarTransistor)、二极管、MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)或JFET(Junction Field Effect Transistor)，从而，使用其用于变换或控制电力的逆变器(inverter)或转换器(converter)或OBC(On Board Charger)等装置的驱动。
然后，金属桥140与半导体芯片130电性连接地接合，而起到维持第1基板110与第2基板120之间的垂直接合距离的隔片的作用，并且，以特定形状弯曲形成且具有弹性，而在膜制第1基板110、第2基板120、半导体芯片130时，能够分散因膜制模型(未图示)的垂直方向的按压应力，向半导体芯片130传送最小限度的冲击，从而，能够提高半导体芯片130的耐久性。
例如，金属桥140的一端介入第2导电性粘接剂141与半导体芯片130的另一侧面接合，金属桥140的另一端介入第3导电性粘接剂142与第2基板120接合(参照图2至图6),或与第1基板110和第2基板120分别介入第3导电性粘接剂142而接合(参照图2的(A))。
尤其，如果金属桥140的另一端分别与第1基板110、第2基板120介入第3导电性粘接剂142而接合时，优选地，在第1基板110上形成的第3导电性粘接剂142的中心与在第2基板120上形成的第3导电性粘接剂142的中心之间由水平方向偏离形成。由此，在膜制第1基板110、第2基板120、半导体芯片130时，能够分散因膜制模型(未图示)的垂直方向的按压应力，向半导体芯片130传送最小限度的冲击，从而，能够提高半导体芯片130的耐久性。
并且，将第1基板110上的半导体芯片130和第2基板120电性连接的金属桥140以1段以上弯曲形成而具有弹性，与半导体芯片130和第2基板120接合的金属桥接触区域，即，第2导电性粘接剂141的中心和第3导电性粘接剂142的中心由水平方向偏离形成，而在其之间形成的金属桥140分散因膜制模型发生的垂直方向的按压应力，从而，能够防止从金属桥140向半导体芯片130立即或直接地传送压力。
更详细地，如图2至图4所示，弯曲形成的金属桥140形成以直线形态弯曲形成的结构，而与半导体芯片130和第1基板110或第2基板120接合，或如图5及图6所示，在半导体芯片130与第1基板110或第2基板120之间以夹片形态或弹簧形态弯曲形成的结构。在此，形成夹片形态或弹簧形态的金属桥140与另外的粘接剂143接合而被支撑在第1基板110或第2基板120上，或如图5所示，金属桥140在第1基板110与第2基板120之间单独地形成，也可如图6所示，金属桥140以垂直方向反转的结构在第1基板110与第2基板120之间形成一对。
并且，图7至图9详细地示例体现图5的第3例的半导体封装，参照其在分别形成0.3mm厚度的ZTA(Zirconia Toughened Alumina)材料的第1基板110与第2基板120之间形成具有0.2mm厚度的夹片形态的金属桥140，金属桥140的直线形态的一侧部，在半导体芯片130上介入Sn焊料的第2导电性粘接剂141而接合，闭合曲线形态的另一侧部与第1基板110之间介入Sn焊料材料的粘接剂143,与第2基板之间介入SAC305(Sn96.5％,Ag3.0％,Cu0.5％)焊料材料的第3导电性粘接剂142而接合，从而，能够防止在膜制时第1基板110与第2基板120之间的按压应力直接地向半导体芯片130传送。
并且，在图10及图11示例形成有与第1基板110或第2基板120电性连接的终端引线160图案的引线框架170，上面说明的结构的半导体封装在终端引线160的一部分被裸露的状态下进行膜制而形成封装外壳150。然后，剪切封装外壳150外部的引线框架170而形成产品化。
在本实施例中，为了有效地分散按压应力，为了在第1基板110与第2基板120之间接合金属桥140的第2导电性粘接剂141的中心与第3导电性粘接剂142的中心之间的水平接合距离H为0.5㎜至7㎜，优选地，金属桥140的一端与另一端之间的垂直接合距离V为0.1㎜至5㎜。
并且，金属桥140的厚度可在0.1㎜至2mm的范围能够维持上面说明的水平接合距离H及垂直接合距离V地形成。
并且，金属桥140的热导率为200W/(m-k)至500W/(m-k)，从而，通过封装外壳150，或通过向封装外壳150外部裸露的第1基板110及第2基板120而具有良好的放热特性。
并且，金属桥140可包括Cu和Fe中某一个以上的成分，而具有良好的导电性。
并且，第1至第3导电性粘接剂131,141,142可分别包括Ag,Cu及Sn中某一个以上的成分而具有良好的导电性，并且，第1至第3导电性粘接剂131,141,142的各个厚度为10μm至500μm。
并且，虽未图示，金属桥140在一个以上的半导体芯片130的上面接合，并向封装外壳150外部延伸裸露，从而，不仅起到隔片作用，而且，还起到作为终端引线160的功能。
并且，如图4所示，金属桥140可在一个以上的半导体芯片130的上面接合，并与第1基板110,或第2基板120,或第1基板110和第2基板120接合，向封装外壳150外部延伸裸露，从而，不仅起到隔片作用，而且，还起到作为终端引线160的功能。
并且，金属桥140的一端可在一个以上的半导体芯片130的上面接合，另一端只与第1基板110接合，或只与第2基板120接合，或分别与第1基板110和第2基板120接合而弯曲形成(参照图2至图4)。
并且，如图2的(A)所示，金属桥140的一端可在一个以上的半导体芯片130的上面接合，另一端介入导电性粘接剂161与一个以上的终端引线160电性连接。
然后，封装外壳150由EMC,PBT或PPS材料形成而绝缘形成，将内部线路，例如，半导体芯片130整体和金属桥140的至少一部分包裹保护，并且，金属桥140的一部分向封装外壳150外部裸露形成。
然后，终端引线160形成一个以上，第1基板110(参照图2至图6)也与第2基板120(参照图5)或金属桥140(参照图2、图4及图5)电性连接，向封装外壳150外部裸露，而从外部供应电性信号。
并且，终端引线160的一端与封装外壳150内部的第1基板110通过连接材料162电性连接(参照图2,图3,图4及图6),或与第2基板120通过连接材料163电性连接，或与第1基板110和第2基板120通过连接材料162,163而分别电性连接(参照图5)。
在此，连接材料162,163为导电性粘接剂，终端引线160的一端通过导电性粘接剂与第1基板110或第2基板120或第1基板110和第2基板120电性连接，或终端引线160的一端通过超音波焊接与第1基板110或第2基板120或与第1基板110和第2基板120无连接材料而直接电性连接。
并且，第1基板110或第2基板120或第1基板110和第2基板120的至少一部分可向封装外壳150一面裸露形成，而能够有效地释放驱动时的发热。在此，向封装外壳150外侧裸露的第1基板110或第2基板120的裸露面排列可形成有用于增大放热面积的格子或散热片，或附加形成有水冷式或空冷式的散热结构，从而，能够有效地释放驱动时的发热，提高耐久性。
并且，本发明的另一实施例提供一种制造半导体封装的半导体封装制造方法，准备第1基板110和第2基板120，在第1基板110或第2基板120上贴装半导体芯片130,并在半导体芯片130与第1基板110或第2基板120之间接合以上述说明的结构弯曲形成并具有弹性的金属桥140，并且，将终端引线160与第1基板110或第2基板120或金属桥140电性连接，使得金属桥140或终端引线160的一部分裸露地膜制，而形成封装外壳150，从而，能够分散膜制时的按压应力。
并且，本发明的又另一实施例提供一种以上述说明的结构弯曲形成，并具有弹性的金属桥140，而适用于半导体封装。
由此，通过如上述说明的半导体封装、半导体封装制造方法及适用于其的金属桥的构成，代替由类似于半导体芯片的CTE的材料形成的高价的垂直结构的金属隔片，而提高价格竞争力，并且，借助于弯曲形成具有弹性的非垂直结构的金属桥而吸收降低膜制时的按压应力或迂回分散，从而，能够保护半导体芯片，并有效地防止半导体芯片与金属桥之间接合区域的粘接剂的裂纹发生。
在本说明书中记载的实施例和在附图中图示的构成只是本发明的最优选的一实施例，并非代言本发明的全部技术思想，因此，应当理解在申请本发明时存在可代替其的各种均等物和变形例。

Claims (20)

1.一种半导体封装，其特征在于，包括：
第1基板，其为了电性连接而形成有特定金属图案；
第2基板，其与所述第1基板相对地分隔形成，并且，为了电性连接而形成有特定金属图案；
一个以上的半导体芯片，其一侧面介入第1导电性粘接剂而与所述第1基板、所述第2基板或所述第1基板和所述第2基板接合；
金属桥，其一端介入第2导电性粘接剂与所述半导体芯片的另一侧面接合，另一端介入第3导电性粘接剂与所述第2基板、所述第1基板或所述第1基板和所述第2基板接合，并且，具有弹性以特定形状弯曲形成；
封装外壳，其包裹所述半导体芯片和所述金属桥的至少一部分；及
一个以上的终端引线，其与所述第1基板、所述第2基板、或所述金属桥电性连接，并向所述封装外壳外部，
并且，为了在所述第1基板与所述第2基板之间接合所述金属桥的所述第2导电性粘接剂的中心与所述第3导电性粘接剂的中心之间的水平接合距离(H)为0.5㎜至7㎜，所述金属桥的一端与另一端之间的垂直接合距离(V)为0.1㎜至5㎜。
2.根据权利要求1所述的半导体封装，其特征在于，
所述第1基板或所述第2基板(i)包括一个以上的绝缘层，或(ii)由金属材料或绝缘材料形成，或(iii)由一个以上的金属层和一个以上的绝缘层和一个以上的金属层的层积结构形成。
3.根据权利要求1所述的半导体封装，其特征在于，
与所述第1导电性粘接剂接合的所述第1基板或所述第2基板的金属层厚度,或与所述第3导电性粘接剂接合的所述第2基板或所述第1基板的金属层的厚度为15μm至2㎜。
4.根据权利要求1所述的半导体封装，其特征在于，
所述金属桥的厚度为0.1㎜至2mm。
5.根据权利要求1所述的半导体封装，其特征在于，
所述金属桥的热导率为200W/(m-k)至500W/(m-k)。
6.根据权利要求1所述的半导体封装，其特征在于，
所述金属桥包括Cu及Fe中的某一个以上的成分。
7.根据权利要求1所述的半导体封装，其特征在于，
所述第1至第3导电性粘接剂包括Ag、Cu及Sn中的某一个以上的成分。
8.根据权利要求1所述的半导体封装，其特征在于，
所述第1至第3导电性粘接剂的厚度为10μm至500μm。
9.根据权利要求1所述的半导体封装，其特征在于，
所述金属桥与所述一个以上的半导体芯片的上面接合，向所述封装外壳外部延伸裸露，而起到终端引线的功能。
10.根据权利要求1所述的半导体封装，其特征在于，
所述金属桥与所述一个以上的半导体芯片的上面接合，并且，与所述第1基板或所述第2基板或所述第1基板和所述第2基板接合，向所述封装外壳外部延伸裸露，而起到终端引线的功能。
11.根据权利要求1所述的半导体封装，其特征在于，
所述金属桥的一端与所述一个以上的半导体芯片的上面接合，
所述金属桥的另一端与所述第1基板、所述第2基板或所述第1基板和所述第2基板接合。
12.根据权利要求1所述的半导体封装，其特征在于，
所述金属桥的一端与所述一个以上的半导体芯片的上面接合，
所述金属桥的另一端与所述一个以上的终端引线电性连接。
13.根据权利要求1所述的半导体封装，其特征在于，
所述终端引线的一端通过连接材料与所述封装外壳内部的所述第1基板、所述第2基板或所述第1基板和所述第2基板电性连接。
14.根据权利要求13所述的半导体封装，其特征在于，
所述连接材料为导电性粘接剂，所述终端引线的一端通过所述导电性粘接剂与所述第1基板或所述第2基板或所述第1基板和所述第2基板电性连接，或所述终端引线的一端通过超音波焊接与所述第1基板或所述第2基板或所述第1基板和所述第2基板直接电性连接。
15.根据权利要求1所述的半导体封装，其特征在于，
所述第1基板、所述第2基板或所述第1基板和所述第2基板的至少一部分向所述封装外壳的一面裸露。
16.根据权利要求2所述的半导体封装，其特征在于，
与所述半导体芯片的上面接合的所述金属桥的厚度大于所述第1基板或所述第2基板的绝缘层的厚度。
17.根据权利要求1所述的半导体封装，其特征在于，
所述半导体芯片为IGBT、二极管、MOSFET或JFET。
18.一种将权利要求1的半导体封装使用于逆变器、转换器或OBC的驱动的半导体封装。
19.一种制造权利要求1的半导体封装的半导体封装制造方法。
20.一种适用于权利要求1的半导体封装的金属桥。
CN202210009221.XA 2021-05-04 2022-01-05 半导体封装、半导体封装制造方法及适用于其的金属桥 Pending CN115312488A (zh)

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