CN115198253A - 一种石墨基体表面碳化钽涂层的制备方法 - Google Patents
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Abstract
本发明公开了一种石墨基体表面碳化钽涂层的制备方法，其制备方法包括以下步骤：①、制备碳化钽有机先驱体溶液；②、化学试剂均采用分析纯级别；③、将制备好的碳化钽有机先驱体溶液倒入特质器皿中，将需要涂敷的清洗干净的石墨基材浸入溶液中。该石墨基体表面碳化钽涂层的制备方，相对于传统技术，具有以下优点：本发明采用化学液相浸渗法和高温热处理结合的工艺方法，相对CVD法成本更低、周期更短、设备简单、较易实现批量化生产。
Description
技术领域
本发明涉及涂层技术领域，具体为一种石墨基体表面碳化钽涂层的制备方法。
背景技术
涂层保护是提高石墨基材料性能的有效手段，碳化硅(SiC)陶瓷涂层已广泛应用于石墨基材料的表面防护，其作用主要是提高基材的抗氧化、耐腐蚀和耐磨损能力。但在更高温度(＞2000℃)或更特殊环境(单晶生长)的应用背景下，SiC陶瓷自身存在易受熔盐腐蚀和低熔点的氧化硅易挥发等问题，不能满足应用需求。因而开发熔点更高、抗氧化烧蚀性能更优、耐化学腐蚀性能更强的陶瓷涂层成为了材料工作者关注的焦点。
半导体用石墨基座盘是MOCVD设备用外延生长单晶SiC、InP、GaN、AlN半导体的关键耗材，在半导体芯片产业链上起到不可替代的作用。CVD-SiC或MOCVD-GaN外延生长条件比常规CVD-Si工艺条件更具腐蚀性。并且CVD-SiC外延生长气体体系是H2-SiH4-C3H8，外延生长温度高达1500-1700℃。对于普通SiC涂层石墨托盘，难以在如此苛刻的环境下长期可靠使用，现有的生长载体或气体通道表面上的SiC保护层会因为参与化学反应而失效，从而对晶体、半导体等产品的质量产生不利影响。因此必须寻找一种化学稳定性和抗腐蚀性更好的材料作保护层，提高晶体、半导体等产品质量。
碳化钽具有优异的物理和化学性能，因为强化学键的作用，其高温化学稳定性和耐腐蚀性远高于SiC、BN等，是一种应用前景极大的耐腐蚀、热稳定性突出的涂层。
目前TaC涂层制备工艺较为成熟的为化学气相沉积法(CVD)，中南大学发明专利公布了一种CVDSiC-TaC共沉积制备TaC涂层的方法(专利号：CN200810186799.2)；日本信越化学工业株式会社公布了CVD法碳化钽覆盖石墨基材的内面的坩埚的方法，用于生长SiC单晶(专利号：CN201811468226.9)；湖南中科顶立技术创新研究院有限公司公布了一种先增加石墨基材表面粗糙度而后再CVD沉积TaC涂层的方法(专利号：CN202011264485.7)；
南京工业大学公布了利用CVD动态共沉积技术，在石墨基材表面形成有梯度的碳化钽涂层的制备方法(专利号：CN202011278669.9)；
湖南德智新材料有限公司在MOCVD设备用基座表面依次沉积C-SiC共沉积层、SiC涂层、SiC-TaC共沉积梯度层和TaC涂层，形成有梯度的复合涂层用以增强涂层强度(专利号：CN202011431664.5)；
也有采用先刷涂、再烧结方法的，但涂层均匀性难以保证。北京世纪金光半导体有限公司发明专利CN201611179306.3，中电化合物半导体有限公司发明专利CN202110077559.4均有介绍；
湖南德智新材料有限公司通过电泳沉积和粉末烧结相结合的工艺方法在石墨基材表面制备TaC涂层(专利号：CN202011465963.0)。
本发明采用化学液相浸渗法和高温热处理结合的工艺方法在石墨基材表面制备TaC涂层。
发明内容
本发明的目的在于提供一种石墨基体表面碳化钽涂层的制备方法，以解决上述背景技术中提出的涂层强度不够、易开裂和工艺周期长问题。
为实现上述目的，本发明提供如下技术方案：一种石墨基体表面碳化钽涂层的制备方法，其制备方法包括以下步骤：
①、制备碳化钽有机先驱体溶液；
②、化学试剂均采用分析纯级别；
③、将制备好的碳化钽有机先驱体溶液倒入特质器皿中，将需要涂敷的清洗干净的石墨基材浸入溶液中；
④、将特质器皿放入真空炉中抽真空至＜100Pa，并在真空条件下浸渍3-5h；
⑤、停止抽真空后关闭出气阀门，向真空炉内通入惰性保护气体并继续浸渍2-3h；
⑥、经真空浸渍、真空加压浸渍后，碳化钽有机先驱体溶液渗透到石墨基材的微细孔隙中；
⑦、真空炉抽真空至大气压后，开炉取出特质器皿，将浸渍后的石墨基材取出置于真空炉的载物台上，合炉抽真空至炉内压力≤100Pa；
⑧、打开真空炉加热器，并控制炉内温度60℃、80℃、150℃分别维持4h；
⑨、继续以1-2℃/min的升温速率加热，600℃时通入氩气，并使炉压升至10-20KPa后维持稳定；
⑩、继续以2℃/min的升温速率加热至900℃，恒温1-2h；
与现有技术相比，本发明的有益效果是：该石墨基体表面碳化钽涂层的制备方，相对于传统技术，具有以下优点：
本发明采用化学液相浸渗法和高温热处理结合的工艺方法，相对CVD法成本更低、周期更短、设备简单、较易实现批量化生产。
附图说明
结合附图并参考以下具体实施方式，本公开各实施例的上述和其他特征、优点及方面将变得更加明显。贯穿附图中，相同或相似的附图标记表示相同或相似的元素。应当理解附图是示意性的，原件和元素不一定按照比例绘制。
图1为本发明制备流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明提供一种技术方案：一种石墨基体表面碳化钽涂层的制备方法，其制备方法包括以下步骤：
①、制备碳化钽有机先驱体溶液；
②、化学试剂均采用分析纯级别；
③、将制备好的碳化钽有机先驱体溶液倒入特质器皿中，将需要涂敷的清洗干净的石墨基材浸入溶液中；
④、将特质器皿放入真空炉中抽真空至＜100Pa，并在真空条件下浸渍3-5h；
⑤、停止抽真空后关闭出气阀门，向真空炉内通入惰性保护气体并继续浸渍2-3h；
⑥、经真空浸渍、真空加压浸渍后，碳化钽有机先驱体溶液渗透到石墨基材的微细孔隙中；
⑦、真空炉抽真空至大气压后，开炉取出特质器皿，将浸渍后的石墨基材取出置于真空炉的载物台上，合炉抽真空至炉内压力≤100Pa；
⑧、打开真空炉加热器，并控制炉内温度60℃、80℃、150℃分别维持4h；
⑨、继续以1-2℃/min的升温速率加热，600℃时通入氩气，并使炉压升至10-20KPa后维持稳定；
⑩、继续以2℃/min的升温速率加热至900℃，恒温1-2h；
采用化学液相浸渗法和高温热处理结合的工艺方法在石墨基材表面制备TaC涂层，可使得到的涂层均匀致密，且制备工艺周期短，所需设备简单，从而扩大了其市场竞争力，符合企业自身的利益。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。
Claims (1)
1.一种石墨基体表面碳化钽涂层的制备方法，其特征在于：其制备方法包括以下步骤：
①、制备碳化钽有机先驱体溶液；
②、化学试剂均采用分析纯级别；
③、将制备好的碳化钽有机先驱体溶液倒入特质器皿中，将需要涂敷的清洗干净的石墨基材浸入溶液中；
④、将特质器皿放入真空炉中抽真空至＜100Pa，并在真空条件下浸渍3-5h；
⑤、停止抽真空后关闭出气阀门，向真空炉内通入惰性保护气体并继续浸渍2-3h；
⑥、经真空浸渍、真空加压浸渍后，碳化钽有机先驱体溶液渗透到石墨基材的微细孔隙中；
⑦、真空炉抽真空至大气压后，开炉取出特质器皿，将浸渍后的石墨基材取出置于真空炉的载物台上，合炉抽真空至炉内压力≤100Pa；
⑧、打开真空炉加热器，并控制炉内温度60℃、80℃、150℃分别维持4h；
⑨、继续以1-2℃/min的升温速率加热，600℃时通入氩气，并使炉压升至10-20KPa后维持稳定；
⑩、继续以2℃/min的升温速率加热至900℃，恒温1-2h；
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116023169A (zh) * | 2022-12-28 | 2023-04-28 | 苏州优晶光电科技有限公司 | 一种石墨处理工艺及石墨结构 |
| CN116444296A (zh) * | 2023-05-04 | 2023-07-18 | 中南大学 | 一种利用熔盐法在石墨基体上制备碳化钽涂层的方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103435372A (zh) * | 2013-08-12 | 2013-12-11 | 江苏赛菲新材料有限公司 | 一种石墨碳套梯度抗氧化涂层及其制备方法 |
| US20200140997A1 (en) * | 2017-04-28 | 2020-05-07 | Tokai Carbon Korea Co., Ltd | Carbon material having coating layer comprising tac, and method for producing said carbon material |
| TWI706929B (zh) * | 2019-10-05 | 2020-10-11 | 國家中山科學研究院 | 一種石墨基材上之碳化鉭塗層製備方法及其製備物 |
| CN112552065A (zh) * | 2021-01-27 | 2021-03-26 | 巩义市泛锐熠辉复合材料有限公司 | 一种纤维增强陶瓷基复合材料螺栓及其制备方法 |
| JP6849779B1 (ja) * | 2019-12-06 | 2021-03-31 | 國家中山科學研究院 | グラファイト基材上に炭化タンタルを形成する方法 |
-
2022
- 2022-07-05 CN CN202210846684.1A patent/CN115198253A/zh active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103435372A (zh) * | 2013-08-12 | 2013-12-11 | 江苏赛菲新材料有限公司 | 一种石墨碳套梯度抗氧化涂层及其制备方法 |
| US20200140997A1 (en) * | 2017-04-28 | 2020-05-07 | Tokai Carbon Korea Co., Ltd | Carbon material having coating layer comprising tac, and method for producing said carbon material |
| TWI706929B (zh) * | 2019-10-05 | 2020-10-11 | 國家中山科學研究院 | 一種石墨基材上之碳化鉭塗層製備方法及其製備物 |
| JP6849779B1 (ja) * | 2019-12-06 | 2021-03-31 | 國家中山科學研究院 | グラファイト基材上に炭化タンタルを形成する方法 |
| CN112552065A (zh) * | 2021-01-27 | 2021-03-26 | 巩义市泛锐熠辉复合材料有限公司 | 一种纤维增强陶瓷基复合材料螺栓及其制备方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116023169A (zh) * | 2022-12-28 | 2023-04-28 | 苏州优晶光电科技有限公司 | 一种石墨处理工艺及石墨结构 |
| CN116444296A (zh) * | 2023-05-04 | 2023-07-18 | 中南大学 | 一种利用熔盐法在石墨基体上制备碳化钽涂层的方法 |
| CN116444296B (zh) * | 2023-05-04 | 2024-02-02 | 中南大学 | 一种利用熔盐法在石墨基体上制备碳化钽涂层的方法 |
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