CN115117154A - 一种具有高续流能力的鳍式氮化镓器件 - Google Patents

一种具有高续流能力的鳍式氮化镓器件 Download PDF

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CN115117154A
CN115117154A CN202210712859.XA CN202210712859A CN115117154A CN 115117154 A CN115117154 A CN 115117154A CN 202210712859 A CN202210712859 A CN 202210712859A CN 115117154 A CN115117154 A CN 115117154A
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CN115117154B (zh
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李胜
李明飞
马岩锋
张弛
刘斯扬
孙伟锋
时龙兴
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Southeast University-Wuxi Institute Of Integrated Circuit Technology
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Abstract

本发明公开了一种具有高续流能力的鳍式氮化镓器件，包括：金属漏电极，第一高掺杂层，具有鳍式结构的缓冲层，具有第一鳍柱、第二鳍柱、第三鳍柱、第四鳍柱的元胞区和具有第五鳍柱、第六鳍柱的终端区；第一、第四、第五鳍柱的顶表面叠设第二高掺杂层、金属源电极，并通过其外侧的金属栅电极实现器件的正向工作状态，第二、第六鳍柱通过顶表面及外侧的第二金属源电极实现器件的反向工作状态，第三鳍柱的顶表面及外侧设有第三介质层，用于隔离第二鳍柱与第四鳍柱；本发明器件具有高续流能力、高击穿电压、低开关损耗以及高工艺集成度等优势。

Description

一种具有高续流能力的鳍式氮化镓器件
技术领域
本发明属于功率半导体器件领域，主要内容是设计一种具有高续流能力的鳍式氮化镓器件。
背景技术
氮化镓(GaN)作为第三代半导体材料的代表，具有宽禁带、高临界击穿电场、高电子饱和漂移速度等优势，使得氮化镓基晶体管具有更快的开关速度，更低的特征导通电阻，以及更小的尺寸，相较于硅基晶体管，氮化镓晶体管更适用于功率开关系统的应用。
传统鳍式氮化镓器件具有立体栅结构，极大程度地提高了器件的栅控能力，使得鳍式氮化镓器件不需要制作P型氮化镓，仅通过缩短鳍柱的宽度即可实现增强型器件，其结构如参考图1所示：自下而上设有欧姆接触型的金属漏电极、第一高掺杂层、具有鳍式结构的缓冲层、所述缓冲层上方的鳍式结构；鳍式结构的底表面设有第一介质层；所述第一介质层的上方及鳍式结构的侧壁设有第二介质层；所述鳍式结构的外侧设有肖特基接触型的金属栅电极，其顶表面叠设第二高掺杂层、欧姆接触型的金属源电极；
传统鳍式氮化镓器件由于不存在体二极管，反向开启电压受栅压控制，导致反向开启电压较大，续流能力较差，会造成较大的关态功率损耗，严重影响了整个功率开关系统的效率。
发明内容
技术问题：针对传统鳍式氮化镓器件的上述问题，本发明提供一种具有高续流能力的鳍式氮化镓器件。
技术方案：本发明的一种具有高续流能力的鳍式氮化镓器件自下而上设有欧姆接触型的金属漏电极、第一高掺杂层、带有鳍式结构的缓冲层，所述缓冲层上沿X与Y轴延伸方向均设有重复排列的元胞单元，所有元胞单元构成器件的元胞区，所述元胞区的外围环绕终端区；
所述元胞单元包括两个第一鳍柱以及位于其中间且沿Y轴方向依次重复排列的第二鳍柱、第三鳍柱、第四鳍柱；所述第一鳍柱、第二鳍柱、第三鳍柱、第四鳍柱的底表面设有第一介质层；所述第一鳍柱、第二鳍柱、第三鳍柱、第四鳍柱的侧壁设有第二介质层；所述第一鳍柱远离第二鳍柱的一侧及第四鳍柱的外侧设有肖特基接触型的金属栅电极，所述第一鳍柱与第四鳍柱的顶表面叠设第二高掺杂层、欧姆接触型的第一金属源电极；所述第二鳍柱的顶表面及外侧设有肖特基接触型的第二金属源电极；所述第三鳍柱的顶表面及外侧设有第三介质层；
所述终端区包括第五鳍柱和与其相邻的第六鳍柱；所述第五鳍柱、第六鳍柱的底表面设有第一介质层；所述第一介质层的上方以及第五鳍柱、第六鳍柱的侧壁设有第二介质层；所述第五鳍柱靠近元胞区的一侧设有金属栅电极，所述第五鳍柱的顶表面叠设第二高掺杂层、第一金属源电极；所述第六鳍柱的顶表面、其外侧、远离元胞区一侧的第二介质层上方设有第二金属源电极。
所述第二金属源电极与第一金属源电极通过金属互联，具有相同的电位，所述第二金属源电极与其下方的第二鳍柱、第六鳍柱形成肖特基结。
所述第三介质层用于隔离第二鳍柱与第四鳍柱；位于所述第五鳍柱底表面且远离元胞区一侧的第二金属源电极向器件的边缘延伸形成源场板结构。
所述第二鳍柱、第六鳍柱的阻断耐压大于第一鳍柱、第四鳍柱、第五鳍柱的阻断耐压，满足上述耐压要求的第二鳍柱与第六鳍柱的宽度范围为50nm-300nm。
所述金属栅电极与第二金属源电极为Mo、Ni、Au金属材料的一种或多种组合，且具有相同的功函数。
所述金属漏电极与第一金属源电极为Ti、Al、Ni、Au金属材料的一种或多种组合，且具有相同的功函数。
所述第一介质层为表面钝化层，由Si3N4具有高介电常数的材料制作，其厚度范围为10nm-500nm.。
所述第二介质层为致密的栅氧化层，由Al2O3制作，其厚度范围为10nm-30nm。
所述第三介质层为电气隔离层，由Al2O3制作，厚度范围为10nm-100nm。
所述第一高掺杂层与第二高掺杂层为N型重掺杂的氮化镓，浓度范围为3×1017-1×1020cm-3。
本发明器件的工作原理如下：
(1)正向导通状态下，正栅压使得第一鳍柱、第四鳍柱、第五鳍柱中原本夹断的耗尽层不断缩小，从而产生流经第一鳍柱、第四鳍柱、第五鳍柱的正向电流；
(2)阻断状态下，第一鳍柱、第四鳍柱、第五鳍柱通过其侧壁形成的金属-半导体-氧化物(MIS)结构耗尽电子，第二鳍柱、第六鳍柱通过顶部的肖特基势垒和侧壁形成的金属-半导体-氧化物(MIS)结构耗尽电子，从而本发明器件可以实现阻断效果；
(3)反向工作状态下，第二金属源电极使得第二鳍柱与第六鳍柱中原本夹断的耗尽层不断缩小，从而产生流经第二鳍柱、第六鳍柱的反向电流，其电流大小和反向开启电压由第二金属源电极的电位决定，因此不受栅电压影响。
有益效果：与现有技术相比，本发明具有以下优势：
(1)高续流能力。本发明器件通过第二金属源电极快速泄放电流，器件的反向导通特性如参考图5所示，本发明器件的反向开启电压为0.5V，而传统鳍式氮化镓器件为2.5V，因此本发明器件具有极小的反向开启电压和高续流能力。
(2)高击穿电压。本发明器件的第二鳍柱、第六鳍柱与其顶部的第二金属源电极形成肖特基结，与其外侧的第二介质层和第二金属源电极整体构成金属层-绝缘层-半导体层结构(MIS)，且第二鳍柱、第六鳍柱的宽度小于300nm，保证本发明器件处于阻断状态时，第二鳍柱、第六鳍柱中的电子沟道被夹断，提高了器件的击穿电压。
(3)低开关功耗。本发明器件的终端具有源场板，相较于栅场板，具有更小的栅寄生电容，更快的开关速度以及更低的开关功耗。
(4)高工艺集成度。本发明器件的制备方法与传统鳍式氮化镓器件的工艺相兼容。
附图说明
图1为传统鳍式氮化镓器件的结构示意图；
图2为本发明提出的一种具有高续流能力的鳍式氮化镓器件的结构示意图；
图3为本发明结构示意图1中虚线L1、L2沿X轴的截面示意图和虚线L3沿Y轴的截面示意图，其中图a为虚线L1沿X轴的截面，图b为虚线L2沿X轴的截面，图c为虚线L3沿Y轴的截面；
图4为本发明器件的一种版图结构示意图，仅用于说明和解释本发明，实际应用不限于此版图；
图5为本发明器件、传统鳍式氮化镓器件的正向电流路径示意图，其中图a为传统鳍式氮化镓器件的正向电流路径，图b为本发明器件的正向电流路径；
图6为本发明器件、传统鳍式氮化镓器件的反向电流路径示意图，其中图a为传统鳍式氮化镓器件的反向电流路径，图b为本发明器件的反向电流路径；
图7为本发明器件与传统鳍式氮化镓器件的反向导通特性对比图，可以看出在标准反向开启电流密度为-10-3A/mm2，栅压为-2V时，本发明器件的反向开启电压为0.5V，而传统鳍式氮化镓器件的反向开启电压为2.5V，说明本发明器件可以显著降低器件的反向开启电压和快速提升器件的续流能力；
图8为本发明器件元胞单元中具有第一鳍柱和第二鳍柱区域的工艺制造流程；
图9为本发明器件元胞单元中具有第一鳍柱和第二鳍柱区域的工艺制造示意图；工艺制造顺序为从左到右，从上到下。
图中有：欧姆接触型的金属漏电极1、第一高掺杂层2、带有鳍式结构的缓冲层3、第一鳍柱4a、第二鳍柱4b、第一介质层5、第二介质层6、肖特基接触型的金属栅电极7、第二高掺杂层8、欧姆接触型的第一金属源电极9、肖特基接触型的第二金属源电极10、第三介质层11。
具体实施方式
下面结合附图和具体实施方案对本发明进一步详细说明，应当理解，此处描述的实施案例仅用于说明和解释本发明，并不用于限定本发明。
实施例1：
本发明具有高续流能力的鳍式氮化镓器件自下而上设有欧姆接触型的金属漏电极1、第一高掺杂层2、带有鳍式结构的缓冲层3，所述缓冲层3上沿X与Y轴延伸方向均设有重复排列的元胞单元A1，所有元胞单元A1构成器件的元胞区A，所述元胞区A的外围环绕终端区B；
所述元胞单元A1包括两个第一鳍柱4a以及位于其中间且沿Y轴方向依次重复排列的第二鳍柱4b、第三鳍柱4c、第四鳍柱4d；所述第一鳍柱4a、第二鳍柱4b、第三鳍柱4c、第四鳍柱4d的底表面设有第一介质层5；所述第一鳍柱4a、第二鳍柱4b、第三鳍柱4c、第四鳍柱4d的侧壁设有第二介质层6；所述第一鳍柱4a远离第二鳍柱4b的一侧及第四鳍柱4d的外侧设有肖特基接触型的金属栅电极7，所述第一鳍柱4a与第四鳍柱4d的顶表面叠设第二高掺杂层8、欧姆接触型的第一金属源电极9；所述第二鳍柱4b的顶表面及外侧设有肖特基接触型的第二金属源电极10；所述第三鳍柱4c的顶表面及外侧设有第三介质层11；
所述终端区B包括第五鳍柱4e和与其相邻的第六鳍柱4f；所述第五鳍柱4e、第六鳍柱4f的底表面设有第一介质层5；所述第一介质层5的上方以及第五鳍柱4e、第六鳍柱4f的侧壁设有第二介质层6；所述第五鳍柱4e靠近元胞区A的一侧设有金属栅电极7，所述第五鳍柱4e的顶表面叠设第二高掺杂层8、第一金属源电极9；所述第六鳍柱4f的顶表面、其外侧、远离元胞区A一侧的第二介质层6上方设有第二金属源电极10。
所述第二金属源电极10与第一金属源电极9通过金属互联，具有相同的电位；所述第三介质层11用于隔离第二鳍柱4b与第四鳍柱4d；所述第二金属源电极10与其下方的第二鳍柱4b、第六鳍柱4f形成肖特基结；位于所述第五鳍柱4e底表面且远离元胞区A一侧的第二金属源电极10向器件的边缘延伸形成源场板结构。
所述第二鳍柱4b、第六鳍柱4f的阻断耐压大于第一鳍柱4a、第四鳍柱4d、第五鳍柱4e的阻断耐压，满足上述耐压要求的第二鳍柱4b与第六鳍柱4f的鳍柱宽度范围为50nm-300nm。
所述金属栅电极7与第二金属源电极10为Mo、Ni、Au等金属材料的一种或多种组合，且具有相同的功函数，所述金属漏电极1与第一金属源电极11为Ti、Al、Ni、Au等金属材料的一种或多种组合，且具有相同的功函数，所述第一介质层5为较厚的表面钝化层，由Si3N4等具有高介电常数的材料制作，其厚度范围为10nm-500nm，所述第二介质层6为薄且致密的栅氧化层，由Al2O3制作，其厚度范围为10nm-30nm，所述第三介质层11为电气隔离层，由Al2O3制作，厚度范围为10nm-100nm，所述第一高掺杂层2与第二高掺杂层8为N型重掺杂的氮化镓，浓度范围为3×1017-1×1020cm-3。

Claims (10)

1.一种具有高续流能力的鳍式氮化镓器件，其结构特征在于：该器件自下而上设有欧姆接触型的金属漏电极(1)、第一高掺杂层(2)、带有鳍式结构的缓冲层(3)，所述缓冲层(3)上沿X与Y轴延伸方向均设有重复排列的元胞单元(A1)，所有元胞单元(A1)构成器件的元胞区(A)，所述元胞区(A)的外围环绕终端区(B)；
所述元胞单元(A1)包括两个第一鳍柱(4a)以及位于其中间且沿Y轴方向依次重复排列的第二鳍柱(4b)、第三鳍柱(4c)、第四鳍柱(4d)；所述第一鳍柱(4a)、第二鳍柱(4b)、第三鳍柱(4c)、第四鳍柱(4d)的底表面设有第一介质层(5)；所述第一鳍柱(4a)、第二鳍柱(4b)、第三鳍柱(4c)、第四鳍柱(4d)的侧壁设有第二介质层(6)；所述第一鳍柱(4a)远离第二鳍柱(4b)的一侧及第四鳍柱(4d)的外侧设有肖特基接触型的金属栅电极(7)，所述第一鳍柱(4a)与第四鳍柱(4d)的顶表面叠设第二高掺杂层(8)、欧姆接触型的第一金属源电极(9)；所述第二鳍柱(4b)的顶表面及外侧设有肖特基接触型的第二金属源电极(10)；所述第三鳍柱(4c)的顶表面及外侧设有第三介质层(11)；
所述终端区(B)包括第五鳍柱(4e)和与其相邻的第六鳍柱(4f)；所述第五鳍柱(4e)、第六鳍柱(4f)的底表面设有第一介质层(5)；所述第一介质层(5)的上方以及第五鳍柱(4e)、第六鳍柱(4f)的侧壁设有第二介质层(6)；所述第五鳍柱(4e)靠近元胞区(A)的一侧设有金属栅电极(7)，所述第五鳍柱(4e)的顶表面叠设第二高掺杂层(8)、第一金属源电极(9)；所述第六鳍柱(4f)的顶表面、其外侧、远离元胞区(A)一侧的第二介质层(6)上方设有第二金属源电极(10)。
2.根据权利要求1所述的一种具有高续流能力的鳍式氮化镓器件，其特征在于，所述第二金属源电极(10)与第一金属源电极(9)通过金属互联，具有相同的电位，所述第二金属源电极(10)与其下方的第二鳍柱(4b)、第六鳍柱(4f)形成肖特基结。
3.根据权利要求1所述的一种具有高续流能力的鳍式氮化镓器件，其特征在于，所述第三介质层(11)用于隔离第二鳍柱(4b)与第四鳍柱(4d)；位于所述第五鳍柱(4e)底表面且远离元胞区(A)一侧的第二金属源电极(10)向器件的边缘延伸形成源场板结构。
4.根据权利要求1所述的一种具有高续流能力的鳍式氮化镓器件，其特征在于，所述第二鳍柱(4b)、第六鳍柱(4f)的阻断耐压大于第一鳍柱(4a)、第四鳍柱(4d)、第五鳍柱(4e)的阻断耐压，满足上述耐压要求的第二鳍柱(4b)与第六鳍柱(4f)的宽度范围为50nm-300nm。
5.根据权利要求1所述的一种具有高续流能力的鳍式氮化镓器件，其特征在于，所述金属栅电极(7)与第二金属源电极(10)为Mo、Ni、Au金属材料的一种或多种组合，且具有相同的功函数。
6.根据权利要求1所述的一种具有高续流能力的鳍式氮化镓器件，其特征在于，所述金属漏电极(1)与第一金属源电极(11)为Ti、Al、Ni、Au金属材料的一种或多种组合，且具有相同的功函数。
7.根据权利要求1所述的一种具有高续流能力的鳍式氮化镓器件，其特征在于，所述第一介质层(5)为表面钝化层，由Si3N4具有高介电常数的材料制作，其厚度范围为10nm-500nm.。
8.根据权利要求1所述的一种具有高续流能力的鳍式氮化镓器件，其特征在于，所述第二介质层(6)为致密的栅氧化层，由Al2O3制作，其厚度范围为10nm-30nm。
9.根据权利要求1所述的一种具有高续流能力的鳍式氮化镓器件，其特征在于，所述第三介质层(11)为电气隔离层，由Al2O3制作，厚度范围为10nm-100nm。
10.根据权利要求1所述的一种具有高续流能力的鳍式氮化镓器件，其特征在于，所述第一高掺杂层(2)与第二高掺杂层(8)为N型重掺杂的氮化镓，浓度范围为3×1017-1×1020cm-3。
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