CN115004146A - 固态存储硬盘和固态存储硬盘的控制方法 - Google Patents

固态存储硬盘和固态存储硬盘的控制方法 Download PDF

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Publication number
CN115004146A
CN115004146A CN202080094787.6A CN202080094787A CN115004146A CN 115004146 A CN115004146 A CN 115004146A CN 202080094787 A CN202080094787 A CN 202080094787A CN 115004146 A CN115004146 A CN 115004146A
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selector
flash memory
nand flash
memory chips
signal
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CN202080094787.6A
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唐勇军
汤永科
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061—Improving I/O performance
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629—Configuration or reconfiguration of storage systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/066—Means for reducing external access-lines for a semiconductor memory clip, e.g. by multiplexing at least address and data signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

一种固态存储硬盘和固态存储硬盘控制方法，其中，固态存储硬盘包括控制器、选择器以及N个NAND闪存芯片，N为大于1的整数，N个NAND闪存芯片构P个NAND闪存芯片阵列，P为大于等于1、且小于等于N的整数；选择器分别与控制器以及N个NAND闪存芯片相耦合；控制器用于向选择器输出多个选通信号，其中，多个选通信号用于指示N个NAND闪存芯片中的M个NAND闪存芯片，M为大于等于1、且小于等于N的整数(701)；选择器用于根据多个选通信号，选择M个NAND闪存芯片进行数据传输(702)。有利于提升固态存储硬盘的接口速率，同时未对固态存储硬盘的存储容量进行限制，能够同时满足固态存储硬盘的高接口速率和高存储容量的性能要求。

Description

PCT国内申请，说明书已公开。

Claims (19)

  1. PCT国内申请，权利要求书已公开。
CN202080094787.6A 2020-02-14 2020-02-14 固态存储硬盘和固态存储硬盘的控制方法 Pending CN115004146A (zh)

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US (1) US20220391087A1 (zh)
EP (1) EP4095666A4 (zh)
CN (1) CN115004146A (zh)
WO (1) WO2021159494A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115904254A (zh) * 2023-01-09 2023-04-04 苏州浪潮智能科技有限公司 一种硬盘控制系统、方法及相关组件

Families Citing this family (2)

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KR20220030403A (ko) * 2020-08-31 2022-03-11 삼성전자주식회사 불휘발성 메모리 장치, 불휘발성 메모리 및 메모리 컨트롤러의 동작 방법
CN216388074U (zh) * 2021-08-17 2022-04-26 深圳市安信达存储技术有限公司 基于龙芯处理器的存储主板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7295472B2 (en) * 2005-04-11 2007-11-13 Stmicroelectronics S.R.L. Integrated electronic non-volatile memory device having nand structure
US8120990B2 (en) * 2008-02-04 2012-02-21 Mosaid Technologies Incorporated Flexible memory operations in NAND flash devices
JP5253901B2 (ja) * 2008-06-20 2013-07-31 株式会社東芝 メモリシステム
TW201209820A (en) * 2010-05-07 2012-03-01 Mosaid Technologies Inc Method and apparatus for concurrently reading a plurality of memory devices using a single buffer
CN201812284U (zh) * 2010-09-01 2011-04-27 杭州国芯科技股份有限公司 一种存储器接口
CN103106155B (zh) * 2011-11-10 2015-10-21 群联电子股份有限公司 存储器储存装置、存储器控制器与其数据传输方法
US20140293705A1 (en) * 2013-03-26 2014-10-02 Conversant Intellecual Property Management Inc. Asynchronous bridge chip
US20150074331A1 (en) * 2013-09-10 2015-03-12 Kabushiki Kaisha Toshiba Nonvolatile memory package and nonvolatile memory chip
CN107861775A (zh) * 2017-12-04 2018-03-30 郑州云海信息技术有限公司 一种ssd启动控制设备以及方法
CN108008919A (zh) * 2017-12-22 2018-05-08 中国电子科技集团公司第五十四研究所 一种高速数据处理ssd
CN108932204A (zh) * 2018-06-13 2018-12-04 郑州云海信息技术有限公司 一种多通道闪存存储系统
US10838901B1 (en) * 2019-10-18 2020-11-17 Sandisk Technologies Llc System and method for a reconfigurable controller bridge chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115904254A (zh) * 2023-01-09 2023-04-04 苏州浪潮智能科技有限公司 一种硬盘控制系统、方法及相关组件

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US20220391087A1 (en) 2022-12-08

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