CN114982206A - 一种集成电路 - Google Patents
一种集成电路 Download PDFInfo
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- CN114982206A CN114982206A CN202080094396.4A CN202080094396A CN114982206A CN 114982206 A CN114982206 A CN 114982206A CN 202080094396 A CN202080094396 A CN 202080094396A CN 114982206 A CN114982206 A CN 114982206A
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
Abstract
提供一种集成电路，涉及电子技术领域，用于减小正交耦合器占用的集成电路中的面积。该集成电路中的正交耦合器上设置有正相差分输入端口(INP)、负相差分输入端口(INN)，正相差分直通端口(TP)、负相差分直通端口(TN)、正相差分耦合端口(CP)、负相差分耦合端口(CN)、正相差分隔离端口(ISOP)和负相差分隔离端口(ISON)；正交耦合器上设置有相互耦合的第一线圈(L1)、第二线圈(L2)、第三线圈(L3)和第四线圈(L4)；正相差分输入端口(INP)和正相差分直通端口(TP)设置在第一线圈(L1)的两端；负相差分输入端口(INN)和负相差分直通端口(TN)设置在第二线圈(L2)的两端；正相差分耦合端口(CP)和正相差分隔离端口(ISOP)设置在第三线圈(L3)的两端；负相差分耦合端口(CN)和负相差分隔离端口(ISON)设置在第四线圈(L4)的两端。
Description
PCT国内申请，说明书已公开。
Claims (18)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/073930 WO2021147054A1 (zh) | 2020-01-22 | 2020-01-22 | 一种集成电路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114982206A true CN114982206A (zh) | 2022-08-30 |
| CN114982206B CN114982206B (zh) | 2024-05-03 |
Family
ID=76992031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080094396.4A Active CN114982206B (zh) | 2020-01-22 | 2020-01-22 | 一种集成电路 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114982206B (zh) |
| WO (1) | WO2021147054A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114421112B (zh) * | 2022-01-19 | 2023-03-24 | 北京理工大学重庆微电子中心 | 一种高集成度片上超宽带差分正交信号生成网络 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1574799A (zh) * | 2003-05-30 | 2005-02-02 | 英特尔公司 | 用于数字传输系统的紧凑电磁耦合器 |
| CN102104363A (zh) * | 2011-03-01 | 2011-06-22 | 北京大学 | 一种太赫兹硅基四倍频器及多倍频器 |
| CN102714501A (zh) * | 2012-02-17 | 2012-10-03 | 华为技术有限公司 | 倍频器和产生倍频信号的方法 |
| WO2013102965A1 (ja) * | 2012-01-05 | 2013-07-11 | パナソニック株式会社 | 直交ハイブリッドカプラ、増幅器及び無線通信装置 |
| CN105070705A (zh) * | 2015-07-12 | 2015-11-18 | 北京理工大学 | 高集成度片上混合型差分正交耦合器 |
| CN106169919A (zh) * | 2015-05-20 | 2016-11-30 | 联发科技股份有限公司 | 集成电路 |
| CN106450803A (zh) * | 2016-10-14 | 2017-02-22 | 江苏大学 | 一种cmos集成源的太赫兹超外差正交探测阵列 |
| CN110212887A (zh) * | 2019-04-28 | 2019-09-06 | 南京汇君半导体科技有限公司 | 一种射频有源移相器结构 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5397862A (en) * | 1993-08-31 | 1995-03-14 | Motorola, Inc. | Horizontally twisted-pair planar conductor line structure |
| CN201075866Y (zh) * | 2007-09-28 | 2008-06-18 | 华为技术有限公司 | 信号复用传输系统 |
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2020
- 2020-01-22 WO PCT/CN2020/073930 patent/WO2021147054A1/zh active Application Filing
- 2020-01-22 CN CN202080094396.4A patent/CN114982206B/zh active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1574799A (zh) * | 2003-05-30 | 2005-02-02 | 英特尔公司 | 用于数字传输系统的紧凑电磁耦合器 |
| CN102104363A (zh) * | 2011-03-01 | 2011-06-22 | 北京大学 | 一种太赫兹硅基四倍频器及多倍频器 |
| WO2013102965A1 (ja) * | 2012-01-05 | 2013-07-11 | パナソニック株式会社 | 直交ハイブリッドカプラ、増幅器及び無線通信装置 |
| CN102714501A (zh) * | 2012-02-17 | 2012-10-03 | 华为技术有限公司 | 倍频器和产生倍频信号的方法 |
| CN106169919A (zh) * | 2015-05-20 | 2016-11-30 | 联发科技股份有限公司 | 集成电路 |
| CN105070705A (zh) * | 2015-07-12 | 2015-11-18 | 北京理工大学 | 高集成度片上混合型差分正交耦合器 |
| CN106450803A (zh) * | 2016-10-14 | 2017-02-22 | 江苏大学 | 一种cmos集成源的太赫兹超外差正交探测阵列 |
| CN110212887A (zh) * | 2019-04-28 | 2019-09-06 | 南京汇君半导体科技有限公司 | 一种射频有源移相器结构 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114982206B (zh) | 2024-05-03 |
| WO2021147054A1 (zh) | 2021-07-29 |
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