CN114864687A - 一种集成自反馈栅控制结构的氮化镓功率半导体器件 - Google Patents

一种集成自反馈栅控制结构的氮化镓功率半导体器件 Download PDF

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CN114864687A
CN114864687A CN202210643562.2A CN202210643562A CN114864687A CN 114864687 A CN114864687 A CN 114864687A CN 202210643562 A CN202210643562 A CN 202210643562A CN 114864687 A CN114864687 A CN 114864687A
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gallium nitride
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李胜
刘梦丽
张弛
马岩锋
刘斯扬
孙伟锋
时龙兴
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Southeast University-Wuxi Institute Of Integrated Circuit Technology
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Abstract

本发明提供一种集成自反馈栅控制结构的氮化镓功率半导体器件，包括：衬底，缓冲层，沟道层，势垒层，由第一金属源电极、第一P型氮化镓帽层、第一金属栅电极、第一金属漏电极、第二P型氮化镓帽层、第二金属栅电极构成的栅控制区，由第一金属源电极、第三P型氮化镓帽层、第三金属栅电极、第二金属漏电极、第二P型氮化镓帽层、第二金属源电极构成的有源工作区；本发明通过栅控制区调节器件整体栅漏电大小，集成度高，寄生少，同时可以有效缓解电荷存储效应，提高器件阈值稳定性。

Description

一种集成自反馈栅控制结构的氮化镓功率半导体器件
技术领域
本发明涉及半导体功率器件领域，具体涉及一种集成自反馈栅控制结构的氮化镓功率半导体器件。
背景技术
氮化镓是第三代宽禁带半导体的代表之一，具有宽带隙、高击穿电场、高热导率等特性，在功率开关器件方向具有广泛需求。以AlGaN/GaN的横向异质结氮化镓功率器件为代表，由于GaN基半导体的自发极化和压电极化效应， AlGaN/GaN异质结界面处在非故意掺杂的情况下产生具有高电子迁移率和高饱和电子漂移速度的二维电子气(2DEG)，利用AlGaN/GaN异质结构制备的高电子迁移率晶体管(HEMT)可用于高频、高压、高温等应用领域。
AlGaN/GaN异质结界面产生的2DEG在通常条件下难以被耗尽，因此目前基于AlGaN/GaN异质结构的氮化镓器件一般为常开型器件，需要稳定的导通电流以保持器件导通。在功率开关应用中考虑安全因素，一般采用常关型器件。对于传统具有P型氮化镓帽层的肖特基栅结构的氮化镓器件，由于肖特基接触等效为一反偏二极管且P型氮化镓帽层与沟道层之间形成PiN结构，因此传统肖特基栅结构的氮化镓器件等效存在一对背靠背二极管，由于电荷存储效应，导致器件在重复开关或连续工作状态下，P型氮化镓帽层中感应的电子无法及时释放，使得器件在下次开启前需要先耗尽P型GaN帽层中存储的电子，导致器件阈值不稳定：阈值电压正漂会导致器件导通电阻增加，阈值电压负漂会导致器件容易误开启。因此阈值不稳定问题在极大程度上会引发器件在系统应用中的一系列可靠性问题、限制器件在高频开关下的使用并对器件电学参数及性能等方面造成负面影响；而传统欧姆栅结构的氮化镓器件则存在栅极泄漏电流过大的缺点，严重影响器件在高栅压条件下工作状态的稳定性。
发明内容
技术问题：针对上述AlGaN/GaN HEMT器件在实际应用过程中阈值电压不稳定及栅极泄露电流较大的问题，本发明提供了一种集成自反馈栅控制结构的氮化镓功率半导体器件，可以有效提高器件阈值稳定性，同时通过自反馈栅控制结构实现调节器件整体栅漏电大小的作用。
技术方案：本发明的一种集成自反馈栅控制结构的氮化镓功率半导体器件采用的技术方法为：
自下而上层叠的衬底、缓冲层、沟道层和势垒层，所述沟道层与势垒层之间由于极化效应产生具有高电子迁移率的异质结沟道，所述势垒层上表面设有栅控制区及有源工作区；
其特征在于所述栅控制区中，势垒层上表面依次间隔设有第一金属源电极、第一P型氮化镓帽层、第一金属漏电极、第二P型氮化镓帽层，其中所述第一P 型氮化镓帽层上表面设有第一金属栅电极，所述第二P型氮化镓帽层上表面设有第二金属栅电极，所述第一金属源电极与第一P型氮化镓帽层之间通过第一电阻区连接，所述第一P型氮化镓帽层与第二P型氮化镓帽层之间通过第二电阻区连接，所述第一金属漏电极与第二P型氮化镓帽层之间通过第三电阻区连接；
所述有源工作区中，势垒层上表面依次间隔设有第一金属源电极、第三P 型氮化镓帽层、第二金属漏电极、第二P型氮化镓帽层、金属源电极，其中所述第三P型氮化镓帽层上表面设有第三金属栅电极，所述第二P型氮化镓帽层上表面设有第二金属栅电极；
所述栅控制区与有源工作区共用第一金属源电极，栅控制区中第一金属漏电极与有源工作区中第三金属栅电极通过连接金属连接，栅控制区与有源工作区共用第二P型氮化镓帽层及第二金属栅电极。
所述第一金属栅电极与第一P型氮化镓帽层之间形成肖特基接触，所述第二金属栅电极与第二P型氮化镓帽层之间形成肖特基接触，所述第三金属栅电极与第三P型氮化镓帽层之间形成欧姆接触，所述第一金属源电极、第二金属源电极、第一金属漏电极及第二金属漏电极均与势垒层之间形成欧姆接触。
栅控制区中的第一金属源电极、第一金属栅电极与第一金属漏电极构成肖特基栅接触类型的增强型氮化镓晶体管；有源工作区中第一金属源电极、第三金属栅电极与第二金属漏电极构成欧姆栅接触类型的氮化镓晶体管，第二金属漏电极、第二金属栅电极与第二金属源电极构成肖特基栅接触类型的氮化镓晶体管。
第一电阻区、第二电阻区及第三电阻区为由所述异质结沟道构成的高电子迁移率电阻、介质电阻、漂移区体电阻的一种或多种组合，其形状为S型、回型、直条型的一种或多种组合。
所述第一电阻区、第二电阻区及第三电阻区，通过改变长宽比调节电阻区阻值大小，第三电阻区用于调节器件整体漏电大小，其阻值为1mΩ-1kΩ，第一电阻区与第二电阻区的阻值比例用于调节栅控制区中肖特基栅接触类型的增强型氮化镓晶体管的开启电压，实现高栅压下第三金属栅电极栅电压的下降，从而实现栅漏电自反馈控制。
所述栅控制区中第一金属栅电极与第二金属栅电极采用相同工艺，其中第一金属栅电极的栅宽与栅长为1um-100um，第二金属栅电极栅长为 1000um-100000um。
所述栅控制区中可以为肖特基栅接触类型的耗尽型氮化镓晶体管。
本发明中所述栅控制区中肖特基栅接触类型的增强型氮化镓晶体管栅极电压由第一电阻区及第二电阻区调控，表示为
Figure BDA0003683175770000031
进一步可表示为
Figure BDA0003683175770000032
当V8a小于栅控制区中肖特基栅接触类型的增强型氮化镓晶体管的阈值时，所述栅控制区中肖特基栅接触类型的增强型氮化镓晶体管关断，有源工作区中欧姆栅接触类型的氮化镓晶体管的栅极电位与有源工作区中肖特基栅接触类型的氮化镓晶体管的栅极电位基本相等，从而实现电荷释放，缓解电荷存储效应，提高器件阈值稳定性；当V8a大于栅控制区中肖特基栅接触类型的增强型氮化镓晶体管的阈值时，所述栅控制区中肖特基栅接触类型的增强型氮化镓晶体管导通，有源工作区中欧姆栅接触类型的氮化镓晶体管的栅极电位被下拉，因此在正常导通状态下，有源工作区中仅肖特基栅接触类型的氮化镓晶体管工作，从而有效降低器件栅极泄漏电流。
所述栅控制区中欧姆栅接触类型的氮化镓晶体管栅极电位可表示为
Figure BDA0003683175770000033
其中RM表示所述栅控制区中肖特基栅接触类型的增强型氮化镓晶体管的沟道电阻，进一步地，有源工作区中欧姆栅接触类型的氮化镓晶体管栅极电位可表示为
Figure BDA0003683175770000034
RM值的大小随所述栅控制区中肖特基栅接触类型的增强型氮化镓晶体管的关断或导通状态变化。
有益效果：与现有技术相比，本发明具有如下有益效果，
提高阈值稳定性。本发明结合了肖特基栅结构与欧姆栅结构的优点，当栅控制区中肖特基栅接触类型的增强型氮化镓晶体管栅极电压小于该增强型氮化镓晶体管的阈值时，通过有源工作区中欧姆栅接触类型的氮化镓晶体管结构帮助泄放P型氮化镓帽层中的存储电荷，有效减缓了电荷存储效应，从而达到提升阈值稳定性的效果。
降低栅极泄露电流。相较于传统欧姆栅结构器件，本发明采用欧姆栅与肖特基栅混合连接的栅结构，有效降低了器件栅极泄露电流，同时，自反馈栅控制结构使器件在当栅控制区中肖特基栅接触类型的增强型氮化镓晶体管栅极电压大于该增强型氮化镓晶体管阈值时，仅保证有源工作区中肖特基栅接触类型的氮化镓晶体管工作，从而进一步减小栅极泄漏电流，并控制栅极泄露电流大小不超过所设定的最大值，所述最大栅极泄露电流可通过第三电阻区的电阻值进行控制调节。
集成度高，寄生少。本发明中，栅控制区第一金属栅电极与有源工作区第二金属栅电极采用相同工艺，减小了工艺难度，且栅控制区与有源工作区的相互连接关系，使得器件集成度更高，并降低了栅极部分寄生对器件在实际应用中的不利影响。
器件可靠性提高，导通功耗降低。欧姆栅极有助于氮化镓器件在导通时从P 型GaN帽层中向势垒层注入大量空穴从而有利于器件在关断时释放被电子陷阱俘获的电子，进而优化器件的动态电阻，提高器件可靠性；同时肖特基栅极克服了单一欧姆栅极氮化镓器件在导通时因需要持续维持电流导致的功耗较大的缺点。
附图说明
图1为具有p型氮化镓帽层的传统氮化镓器件结构示意图与等效电路图；
图2为具有混合栅结构的氮化镓器件结构示意图与等效电路图；
图3a为传统氮化镓器件与传统混合栅结构的氮化镓器件在应力下阈值电压对比图，图3b为不同栅压下栅极泄漏电流对比图；
图4为本发明提出的一种集成自反馈栅控制结构的氮化镓功率半导体器件结构示意图与等效电路图；
图5a为本发明中所述第一电阻区与第二电阻区比值关系；
图5b为所述比值关系大小对栅控制区中肖特基栅接触类型的增强型氮化镓晶体管开启电压的调节作用图，其中纵坐标Vth为栅控制区中增强型氮化镓晶体管阈值；
图6(a)为本发明中栅控制区中肖特基栅接触类型的增强型氮化镓晶体管的等效电路原理图，图6(b)为当V8a小于栅控制区中肖特基栅接触类型增强型氮化镓晶体管阈值时等效原理图；图6(c)为当V8a大于栅控制区中肖特基栅接触类型增强型氮化镓晶体管阈值时等效原理图；
图7a为本发明与传统肖特基栅接触类型氮化镓器件和传统混合栅接触类型氮化镓器件在应力下阈值电压对比图；
图7b为本发明与传统欧姆栅接触类型氮化镓器件和传统肖特基栅接触类型氮化镓器件在不同栅压下栅极泄漏电流对比图，可以看出在相同条件下，本发明具有高阈值稳定性和较小的栅极泄漏电流；
图8a为本发明实施例中提出的另一种集成自反馈栅控制结构的氮化镓功率半导体器件结构图；
图8b为图8a所述结构的等效原理图，其中图8b(a)为当有源工作区B中肖特基栅接触类型的氮化镓晶体管栅极施加的电压负值，即-V8b大于所述栅控制区A中肖特基栅接触类型的耗尽型氮化镓晶体管的阈值电压时的等效原理图；图8b(b)当有源工作区B中肖特基栅接触类型的氮化镓晶体管栅极施加的电压负值，即-V8b小于所述栅控制区A中肖特基栅接触类型的耗尽型氮化镓晶体管的阈值电压时的等效原理图。
具体实施方式
结合附图和具体实施方式对本发明作进一步详细说明。
实施例1：
其结构包括：自下而上层叠的衬底1、缓冲层2、沟道层3和势垒层4，所述沟道层3与势垒层4之间由于极化效应产生具有高电子迁移率的异质结沟道 3a，所述势垒层4上表面设有栅控制区A及有源工作区B；
所述栅控制区A中，势垒层4上表面依次间隔设有第一金属源电极5a、第一P型氮化镓帽层6a、第一金属漏电极7a、第二P型氮化镓帽层6b，其中所述第一P型氮化镓帽层6a上表面设有第一金属栅电极8a，所述第二P型氮化镓帽层6b上表面设有第二金属栅电极8b，所述第一金属源电极5a与第一P型氮化镓帽层6a之间通过第一电阻区10a连接，所述第一P型氮化镓帽层6a与第二P 型氮化镓帽层6b之间通过第二电阻区10b连接，所述第一金属漏电极7a与第二 P型氮化镓帽层6b之间通过第三电阻区10c连接；
所述有源工作区B中，势垒层4上表面依次间隔设有第一金属源电极5a、第三P型氮化镓帽层6c、第二金属漏电极7b、第二P型氮化镓帽层6b、金属源电极5b，其中所述第三P型氮化镓帽层6c上表面设有第三金属栅电极8c，所述第二P型氮化镓帽层6b上表面设有第二金属栅电极8b；
所述栅控制区A与有源工作区B共用第一金属源电极5a，栅控制区A中第一金属漏电极7a与有源工作区B中第三金属栅电极8c通过连接金属9连接，栅控制区A与有源工作区B共用第二P型氮化镓帽层6b及第二金属栅电极8b。
图5描述了栅控制区A中第一电阻区10a和第二电阻区10b的比值关系
Figure BDA0003683175770000061
及其大小对栅控制区A中肖特基栅接触类型增强型氮化镓晶体管的开启电压的调节作用，从而实现自反馈栅控制作用，以
Figure BDA0003683175770000062
为例，当有源工作区B中肖特基栅接触类型的氮化镓晶体管栅极电压小于栅控制区A中肖特基栅接触类型增强型氮化镓晶体管的开启电压时，如图5b阴影部分所示，有源工作区B中欧姆栅接触类型氮化镓晶体管与有源工作区B中肖特基栅接触类型氮化镓晶体管同时工作；当有源工作区B中肖特基栅接触类型的氮化镓晶体管栅极电压大于栅控制区A中肖特基栅接触类型增强型氮化镓晶体管的开启电压V1时，即如图5b阴影右侧部分所示，有源工作区B中仅肖特基栅接触类型氮化镓晶体管工作，因此可以通过调节
Figure BDA0003683175770000063
比值大小调节上述栅控制区A中肖特基栅接触类型增强型氮化镓晶体管的开启电压V1，进而实现自反馈栅控制作用。
实施例2：
基于实施例1中所述结构，在本实施例中，其特征在于：栅控制区A中可以为肖特基栅接触类型的耗尽型氮化镓晶体管，参照图8a，第一金属栅电极 8a通过连接金属9a与第一金属源电极5a连接，第一金属源电极5a通过连接金属9b与有源工作区B中第三金属栅电极8c连接，金属漏电极7通过连接金属 9c与有源工作区B中第二金属栅电极8b连接。与实施例1不同，本实施例中器件阈值由所述栅控制区A中肖特基栅接触类型的耗尽型氮化镓晶体管的阈值直接调控，无需设置电阻区。
为了更好地理解本实施例器件，图8b给出了本实施例在不同条件下工作时的电路原理图：当有源工作区B中肖特基栅接触类型的氮化镓晶体管栅极施加的电压负值大于所述栅控制区A中肖特基栅接触类型的耗尽型氮化镓晶体管的阈值电压时，如图8b所示耗尽型晶体管导通，有源工作区B中肖特基栅接触类型的氮化镓晶体管与有源工作区B中欧姆栅接触类型的氮化镓晶体管同时工作；当有源工作区B中肖特基栅接触类型的氮化镓晶体管栅极施加的电压负值小于所述栅控制区A中肖特基栅接触类型的耗尽型氮化镓晶体管的阈值电压时，如图8b所示耗尽型晶体管关断，有源工作区B中仅肖特基栅接触类型的氮化镓晶体管工作，从而实现了集成自反馈栅控制。

Claims (7)

1.一种集成自反馈栅控制结构的氮化镓功率半导体器件，其结构包括：自下而上层叠的衬底(1)、缓冲层(2)、沟道层(3)和势垒层(4)，所述沟道层(3)与势垒层(4)之间由于极化效应产生具有高电子迁移率的异质结沟道(3a)，所述势垒层(4)上表面设有栅控制区(A)及有源工作区(B)；
其特征在于，所述栅控制区(A)中，势垒层(4)上表面依次间隔设有第一金属源电极(5a)、第一P型氮化镓帽层(6a)、第一金属漏电极(7a)、第二P型氮化镓帽层(6b)，其中所述第一P型氮化镓帽层(6a)上表面设有第一金属栅电极(8a)，所述第二P型氮化镓帽层(6b)上表面设有第二金属栅电极(8b)，所述第一金属源电极(5a)与第一P型氮化镓帽层(6a)之间通过第一电阻区(10a)连接，所述第一P型氮化镓帽层(6a)与第二P型氮化镓帽层(6b)之间通过第二电阻区(10b)连接，所述第一金属漏电极(7a)与第二P型氮化镓帽层(6b)之间通过第三电阻区(10c)连接；
所述有源工作区(B)中，势垒层(4)上表面依次间隔设有第一金属源电极(5a)、第三P型氮化镓帽层(6c)、第二金属漏电极(7b)、第二P型氮化镓帽层(6b)、金属源电极(5b)，其中所述第三P型氮化镓帽层(6c)上表面设有第三金属栅电极(8c)，所述第二P型氮化镓帽层(6b)上表面设有第二金属栅电极(8b)；
所述栅控制区(A)与有源工作区(B)共用第一金属源电极(5a)，栅控制区(A)中第一金属漏电极(7a)与有源工作区(B)中第三金属栅电极(8c)通过连接金属(9)连接，栅控制区(A)与有源工作区(B)共用第二P型氮化镓帽层(6b)及第二金属栅电极(8b)。
2.根据权利要求1所述的一种集成自反馈栅控制结构的氮化镓功率半导体器件,其特征在于：所述第一金属栅电极(8a)与第一P型氮化镓帽层(6a)之间形成肖特基接触，所述第二金属栅电极(8b)与第二P型氮化镓帽层(6b)之间形成肖特基接触，所述第三金属栅电极(8c)与第三P型氮化镓帽层(6c)之间形成欧姆接触，所述第一金属源电极(5a)、第二金属源电极(5b)、第一金属漏电极(7a)及第二金属漏电极(7b)均与势垒层(4)之间形成欧姆接触。
3.根据权利要求1所述的一种集成自反馈栅控制结构的氮化镓功率半导体器件,其特征在于：栅控制区(A)中的第一金属源电极(5a)、第一金属栅电极(8a)与第一金属漏电极(7a)构成肖特基栅接触类型的增强型氮化镓晶体管；有源工作区(B)中第一金属源电极(5a)、第三金属栅电极(8c)与第二金属漏电极(7b)构成欧姆栅接触类型的氮化镓晶体管，第二金属漏电极(7b)、第二金属栅电极(8b)与第二金属源电极(5b)构成肖特基栅接触类型的氮化镓晶体管。
4.根据权利要求1所述的一种集成自反馈栅控制结构的氮化镓功率半导体器件，其特征在于：第一电阻区(10a)、第二电阻区(10b)及第三电阻区(10c)为由所述异质结沟道(3a)构成的高电子迁移率电阻、介质电阻、漂移区体电阻的一种或多种组合，其形状为S型、回型、直条型的一种或多种组合。
5.根据权利要求1所述的一种集成自反馈栅控制结构的氮化镓功率半导体器件，其特征在于：所述第一电阻区(10a)、第二电阻区(10b)及第三电阻区(10c)，通过改变长宽比调节电阻区阻值大小，第三电阻区(10c)用于调节器件整体漏电大小，其阻值为1mΩ-1kΩ，第一电阻区(10a)与第二电阻区(10b)的阻值比例用于调节栅控制区(A)中肖特基栅接触类型的增强型氮化镓晶体管的开启电压，实现高栅压下第三金属栅电极(8c)栅电压的下降，从而实现栅漏电自反馈控制。
6.根据权利要求1所述的一种集成自反馈栅控制结构的氮化镓功率半导体器件，其特征在于：所述栅控制区(A)中第一金属栅电极(8a)与第二金属栅电极(8b)采用相同工艺，其中第一金属栅电极(8a)的栅宽与栅长为1um-100um，第二金属栅电极(8b)栅长为1000um-100000um。
7.根据权利要求1所述的一种集成自反馈栅控制结构的氮化镓功率半导体器件，其特征在于：所述栅控制区(A)中可为肖特基栅接触类型的耗尽型氮化镓晶体管。
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